MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE CM150RL-24NF IC ................................................................... 150A VCES ......................................................... 1200V Insulated Type 7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) (6.05) 110 0.5 17.5 10.5 26 26 11.7 10.5 18.7 V W B (6.05) U 18 (13) 10.5 10.5 CN 25 LABEL 4 110 20 (6.05) 10.5 (13) 11 6-M5 NUTS +1 25 UP 13 30.5 46.3 VP 24.1-0.5 WP 1 (SCREWING DEPTH) 13.75 26.5 4-5.5 MOUNTING HOLES 1 16.5 P 48.75 B 1 78 0.5 20 10.5 A 8 N 1 Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P VP-1 VP-2 UP-1 UP-2 B CN-7 CN-8 U CN-5 CN-6 WP-1 WP-2 W V CN-3 CN-4 CN-1 CN-2 N CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Conditions G-E Short C-E Short DC, TC = 76C*1 Pulse (Note 2) Pulse TC = 25C (Note 2) Ratings 1200 20 150 300 150 300 890 Unit V V A A A A W Ratings 1200 20 75 150 520 1200 75 Unit V V A A W V A Ratings -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Unit C C V N*m N*m g BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current Conditions G-E Short C-E Short DC, TC = 86C*1 Pulse TC = 25C Clamp diode part Clamp diode part (Note 2) (COMMON RATING) Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Jun. 2004 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25C) INVERTER PART Parameter Symbol Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 -- 2.1 2.4 -- -- -- 675 -- -- -- -- -- 5.8 -- -- -- 0.051 -- 0.5 3.0 -- 23 2 0.45 -- 130 70 400 350 150 -- 3.8 0.14 0.23 A Limits Typ. -- Max. 1 VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance IC = 150A, VGE = 15V Tj = 25C Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE1 = VGE2 = 15V RG = 2.1, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 -- 31 mA V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W BRAKE PART Symbol Parameter Test conditions Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- 4.2 -- 2.1 2.4 -- -- -- 338 -- -- -- -- 0.5 3.0 -- 11.5 1.0 0.23 -- 3.8 0.24 0.36 42 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance IC = 75A, VGE = 15V Tj = 25C Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V IF = 75A IGBT part*1 Clamp diode part*1 External gate resistance mA V nF nF nF nC V C/W C/W *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 13 12 200 150 11 100 10 50 9 0 2 4 6 8 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 10 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 8 6 4 IC = 300A IC = 150A 2 IC = 60A 0 6 8 10 12 14 16 18 7 5 3 2 102 7 5 3 2 101 20 Tj = 25C Tj = 125C 1 0 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 3 2 7 5 3 2 Cies 101 7 5 3 2 100 300 103 Tj = 25C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 250 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V Coes 7 5 3 2 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 102 7 5 3 2 td(off) tf td(on) 101 7 5 3 2 100 1 10 Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive load tr 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM150RL-24NF 7 5 3 2 Irr 102 Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 25C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.14C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.23C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 7 Conditions: VCC = 600V 5 VGE = 15V 3 RG = 2.1 Tj = 125C 2 Inductive load C snubber at bus 101 SWITCHING LOSS (mJ/pulse) 102 7 Esw(off) 7 Esw(on) 5 3 2 2 3 5 7 102 2 3 3 Esw(off) 2 101 Conditions: VCC = 600V VGE = 15V IC = 150A Tj = 125C Inductive load C snubber at bus 7 5 3 2 100 0 10 5 7 103 Esw(on) 5 2 3 5 7 101 2 5 7 102 3 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 102 7 7 5 3 2 Err 101 Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive load C snubber at bus 7 5 3 2 100 1 10 10-1 7 5 3 2 102 100 1 10 RECOVERY LOSS (mJ/pulse) trr 7 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE Conditions: VCC = 600V VGE = 15V IE = 150A Tj = 125C Inductive load C snubber at bus 5 3 2 101 7 Err 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () Jun. 2004 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Jun. 2004