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MRF21030LR3 MRF21030LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
!Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
!Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
!High Gain, High Efficiency and High Linearity
!Integrated ESD Protection
!Designed for Maximum Gain and Insertion Phase Flatness
!Excellent Thermal Stability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Low Gold Plating Thickness on Leads, 40"# Nominal.
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC=25$C
Derate above 25$C
PD83.3
0.48
W
W/$C
Storage Temperature Range Tstg -- 65 to +150 $C
Case Operating Temperature TC150 $C
Operating Junction Temperature TJ200 $C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R%JC 2.1 $C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
Document Number: MRF21030
Rev. 12, 5/2006
Freescale Semiconductor
Technical Data
MRF21030LR3
MRF21030LSR3
2200 MHz, 30 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21030LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21030LSR3
&Freescale Semiconductor, Inc., 2006, 2008.
A
ll rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
Table 4. Electrical Characteristics (TC=25$C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=20"A)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 "Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 "Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 100 "Adc)
VGS(th) 2 3 4 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 250 mA)
VGS(Q) 23.3 4.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1Adc)
VDS(on) —0.29 0.4 Vdc
Forward Transconductance
(VDS =10Vdc,I
D=1Adc)
gfs — 2 — S
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS =28Vdc,V
GS =0,f=1MHz)
Ciss —98.5 —pF
Output Capacitance (1)
(VDS =28Vdc,V
GS =0,f=1MHz)
Coss —37 —pF
Reverse Transfer Capacitance
(VDS =28Vdc,V
GS =0,f=1MHz)
Crss —1.3 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two--Tone Common--Source Amplifier Power Gain
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps —13 —dB
Two--Tone Drain Efficiency
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
'—33 — %
3rd Order Intermodulation Distortion
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD —-- 3 0 —dBc
Input Return Loss
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL — -- 1 3 —dB
Two--Tone Common--Source Amplifier Power Gain
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps 12 13 —dB
Two--Tone Drain Efficiency
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
'31 33 — %
3rd Order Intermodulation Distortion
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD —-- 3 0 --27.5 dBc
Input Return Loss
(VDD =28Vdc,P
out = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL — -- 1 3 -- 9 dB
1. Part is internally matched both on input and output.
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MRF21030LR3 MRF21030LSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF21030LR3(SR3) Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1 Z2
VBIAS
C2 C9
C6
+
L1
DUT
VSUPPLY
B1, B2 Short Ferrite Beads
C1 1 pF Chip Capacitor
C2 4.7 pF Chip Capacitor
C3 0.5 pF Chip Capacitor
C4 3.9 pF Chip Capacitor
C5, C12 0.1 "F Chip Capacitors
C6, C13 470 "F, 63 V Electrolytic Chip Capacitors
C7, C8 0.3 pF Chip Capacitors
C9 3.6 pF Chip Capacitor
C10 22 "F Tantalum Chip Capacitor
C11 5.1 pF Chip Capacitor
L1, L2 12.5 nH Inductors
R1, R2 12 (Chip Resistors (1206)
Z1 0.153#x 0.087#Microstrip
Z2 0.509#x 0.156#Microstrip
Z3 0.572#x 0.087#Microstrip
Z4 0.509#x 0.232#Microstrip
Z5 0.277#x 0.143#Microstrip
Z6 0.200#x 0.305#Microstrip
Z7 0.200#x0.511#Microstrip
Z8 0.510#x 0.328#Microstrip
Z9 0.608#x 0.081#Microstrip
PCB Taconic TLX8, 30 mils, )r=2.55
Z3
C13C11
Z8 Z9Z7
C5 C10
Z5 Z6
L2
B2
R2
C4
C1
Z4 Z10
C3
C8
+
C12
+
Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout
C7
B1
R1
++
C1
C2
C3
L1
C4
C8
C7
L2
C9
C11
C10
B2
R2 C12
C13
C5
C6 R1
B1
VV
Ground Ground
WB1
WB2
CUT OUT AREA
BIAS SUPPLY
MRF21030
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
TYPICAL CHARACTERISTICS
VDD =28Vdc,P
out = 30 W (PEP), IDQ = 250 mA
Two--Tone Measurement, 100 kHz Tone Spacing
'
IRL
IMD
Gps
, DRAIN EFFICIENCY (%),'Gps , POWER GAIN (dB)
ADJACENT CHANNEL POWER RATIO (dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
02120
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
30
20
2100 2180 22080 -- 3 5
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
-- 5 5
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0 1.0
15
16
60
-- 4 5
-- 3 5
-- 1 5
-- 3 010
20
10
14
2140 2160 45
100
101.0
13
2200
100
30
40
-- 5
-- 2 5
-- 2 0
10
3rd Order
5th Order
-- 2 5
-- 5 0
-- 4 0
-- 3 0
-- 2 0
-- 5 0
-- 7 0
-- 6 0
-- 4 0
-- 3 0
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%),'Gps , POWER GAIN (dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
3424
-- 3 0
-- 2 2
IMD, INTERMODULATION DISTORTION (dBc)
2820
-- 3 4
-- 3 8
-- 2 6
15
25
-- 7 0
-- 3 0
-- 5 0
-- 2 0
-- 4 0
-- 6 0
6
VDD =28Vdc,I
DQ = 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
IMD, INTERMODULATION DISTORTION (dBc)
10
200 mA
250 mA
400 mA
VDD = 28 Vdc, f = 2140 MHz
Two--Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
VDD =28Vdc,I
DQ = 250 mA, f = 2140 MHz
Two--Tone Measurement,
100 kHz Tone Spacing
Gps , POWER GAIN (dB)
VDD = 28 Vdc, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
Gps , POWER GAIN (dB)
13
13.5
15
14.5
14
26 30
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
'
Gps
Gps
IMD
01 3
350 mA
300 mA
200 mA
250 mA
400 mA
350 mA
300 mA
22 32
7th Order
50 --10
ACPR
-- 3 2
-- 2 4
-- 3 6
-- 2 8
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MRF21030LR3 MRF21030LSR3
5
RF Device Data
Freescale Semiconductor
f
MHz
Zsource
(
Zload
(
2110
2140
2170
15.3 -- j9.4
14.3 -- j8.8
14.6 -- j9.4
3.7 -- j0.78
3.4 -- j0.37
3.0 + j0.13
VDD =28V,I
DQ = 250 mA, Pout = 30 W PEP
Figure 9. Series Equivalent Source and Load Impedance
Zo=25(
f = 2110 MHz
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz Zsource
Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
NOTES
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MRF21030LR3 MRF21030LSR3
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E--04
ISSUE F
NI--400
MRF21030LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060*.005 (1.52*0.13) RADIUS OR .06*.005
(1.52*0.13) x 45$CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N(LID)
E
R(LID)
F
2X K
A
T
C
M
B
M
bbb A M
T
H
B
B
G
A
M
A
M
ccc B M
T
M
A
M
bbb B M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
M
A
M
aaa B M
T
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.44
INCHES
B.380 .390 9.65 9.9
C.125 .163 3.17 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
G
H.057 .067 1.45 1.7
K.092 .122 2.33 3.1
M.395 .405 10 10.3
N.395 .405 10 10.3
Q.120 .130 3.05 3.3
R.395 .405 10 10.3
S.395 .405 10 10.3
aaa
bbb
ccc
.600 BSC 15.24 BSC
.005 BSC 0.127 BSC
.010 BSC 0.254 BSC
.015 BSC 0.381 BSC
SEE NOTE 4
CASE 465F--04
ISSUE E
NI--400S
MRF21030LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
EF
2X K
M
A
M
bbb B M
T
AT
C
H
B
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.395 .405 10.03 10.29
INCHES
B.395 .405 10.03 10.29
C.125 .163 3.18 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
H.057 .067 1.45 1.70
K.092 .122 2.34 3.10
M.395 .405 10.03 10.29
S.395 .405 10.03 10.29
aaa .005 REF 0.127 REF
2X D
M
A
M
ccc B M
T
bbb .010 REF 0.254 REF
ccc .015 REF 0.38 REF
N.395 .405 10.03 10.29
R.395 .405 10.03 10.29
M
A
M
ccc B M
T
M
A
M
aaa B M
T
N(LID)
M(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R(LID)
S(INSULATOR)
M
A
M
aaa B M
T
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8
RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
12 Dec. 2010 !MRF21030 Rev. 12 data sheet archived. Data sheet split due to change in part life cycle. See MRF21030--1
Rev. 13 for MRF21030LSR3 and MRF21030--2 Rev. 14 for MRF21030LR3.
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MRF21030LR3 MRF21030LSR3
9
RF Device Data
Freescale Semiconductor
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Document Number: MRF21030
Rev. 12, 5/2006
