© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 12 A
IC90 TC = 90°C 6 A
ICM TC = 25°C, 1ms 36 A
SSOA VGE = 15V, TVJ = 125°C, RG = 24Ω ICM = 16 A
(RBSOA) Clamped inductive load VCES ≤ 1350 V
PCTC = 25°C 75 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS99004A(10/08)
IXBH6N170
IXBT6N170
G = Gate C = Collector
E = Emitter TAB = Collector
VCES = 1700V
IC90 = 6A
VCE(sat) ≤≤
≤≤
≤ 3.4V
TO-247 (IXBH)
GCEC (TAB)
TO-268 (IXBT)
GE
C (TAB)
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zHigh blocking voltage
zIntegrated Anti-parallel diode
zInternational standard packages
zLow conduction losses
Advantages
zLow gate drive requirement
zHigh power density
Applications:
zSwitched-mode and resonant-mode
power supplies
zUninterruptible power supplies (UPS)
zLaser generator
zCapacitor discharge circuit
zAC switches
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 250μA, VCE = VGE 1700 V
VGE(th) IC= 250μA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES 10 μA
sVGE = 0V TJ = 125°C 100 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 6A, VGE = 15V, Note 1 2.84 3.40 V
TJ = 125°C 3.46 V
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions and dimensions.
IXBH6N170
IXBT6N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfS IC = 6A, VCE = 10V, Note 1 2.0 3.5 S
Cies 378 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 25 pF
Cres 9 pF
Qg 17.0 nC
Qge IC = 6A, VGE = 15V, VCE = 0.5 • VCES 2.5 nC
Qgc 9.6 nC
td(on) 32 ns
tr 59 ns
td(off) 105 ns
tf 690 ns
td(on) 35 ns
tr 69 ns
td(off) 100 ns
tf 600 ns
RthJC 1.65 °C/W
RthCS 0.25 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXBH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Resistive Switching times, TJ = 125°C
IC = 6A, VGE = 15V
VCE = 850V, RG = 24Ω
Resistive Switching times, TJ = 25°C
IC = 6A, VGE = 15V
VCE = 850V, RG = 24Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VF IF = 6A, VGE = 0V, Note 1 3.0 V
trr 1.08 μs
IRM 12.0 A
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
TO-268 (IXBT) Outline
http://store.iiic.cc/
© 2008 IXYS CORPORATION, All rights reserved
IXBH6N170
IXBT6N170
Fig. 1. Output Characteristics
@ 25ºC
0
1
2
3
4
5
6
7
8
9
10
11
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
7V
9V
13V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 12A
I
C
= 6A
I
C
= 3A
Fi g . 5. C o l l ector-to-Emi tter Vol tag e
vs. Gate-to -Emi tter Vo l tag e
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 12A
T
J
= 25ºC
3A
6A
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
16
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions and dimensions.
IXBH6N170
IXBT6N170
IXYS REF: B_6N170(2N)10-09-08
Fig. 7. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 2 4 6 8 10121416
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig . 9. Ga te C h ar g e
0
2
4
6
8
10
12
14
16
0 2 4 6 8 1012141618
QG - NanoCoulombs
VGE - Volts
V
CE
= 850V
I
C
= 42A
I
G
= 10mA
Fi g . 11. Rever se-B i as Safe Op erati n g Area
0
2
4
6
8
10
12
14
16
18
20
22
24
26
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 25Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g. 12. Maximum Tran si en t Th er mal
Impedance
0.1
1.0
10.0
0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
2
4
6
8
10
12
14
16
18
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF - Volts
IF - Amperes
T
J
= 125ºC
T
J
= 25ºC
http://store.iiic.cc/
© 2008 IXYS CORPORATION, All rights reserved
IXBH6N170
IXBT6N170
IXYS REF: B_6N170(2N)10-09-08
Fi g. 14. R esi stive Tu r n -on
Ri se Time vs. Dr ai n Cu r r ent
0
40
80
120
160
200
240
280
3456789101112
IC - Amperes
t
r
- Nanoseconds
R
G
= 24Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R esi stive Tu r n -on
Switc h i n g Times vs . Gate R esi s tan ce
0
100
200
300
400
500
600
700
0 30 60 90 120 150 180 210 240 270 300
RG - Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 12A, 6A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Tem perature
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 12A
I
C
= 6A
Fi g . 17. R esi sti v e Tur n -o f f
Switchi n g Times vs. D r ai n C u r rent
200
300
400
500
600
700
800
900
1000
1100
1200
3456789101112
IC - Amperes
t
f
- Nanoseconds
50
60
70
80
90
100
110
120
130
140
150
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC, 25ºC
Fi g. 13. R esi stive Turn -o n
Ri se Ti me vs. Jun cti o n Temp er atur e
0
40
80
120
160
200
240
280
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 24Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 12A
I
C
= 6A
Fig. 18. Resistive Turn-off
Switchi n g Times vs. Gate Resi stance
300
400
500
600
700
800
900
1000
1100
0 30 60 90 120 150 180 210 240 270 300
RG - Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 12A
I
C
= 6A
http://store.iiic.cc/
