APT12080JVR 1200V 15A 0.800W POWER MOS V (R) S S Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP (R) Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT12080JVR UNIT 1200 Volts Drain-Source Voltage 15 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 450 Watts Linear Derating Factor 3.6 W/C VGSM PD TJ,TSTG 60 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 15 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 1200 Volts 15 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.800 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 250 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) UNIT Ohms A 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 Chemin de Magret 33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE 050-5576 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss APT12080JVR VGS = 0V VDS = 25V Reverse Transfer Capacitance Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr MAX 6500 7800 530 740 f = 1 MHz 250 375 VGS = 10V 325 485 ID = ID[Cont.] @ 25C 29 45 143 215 VGS = 15V 16 32 12 24 59 90 12 24 TYP MAX VDD = 0.5 VDSS ID = ID[Cont.] @ 25C Turn-off Delay Time tf TYP VDD = 0.5 VDSS Rise Time td(off) MIN RG = 0.6W Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN 15 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 60 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) UNIT Amps Volts 1080 ns 22 C THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN RqJC Junction to Case RqJA Junction to Ambient VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% TYP MAX UNIT 0.28 40 C/W 2500 Volts 13 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 22.22mH, R = 25W, Peak I = 15A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) q 050-5576 Rev D 0.3 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION lbin APT12080JVR 30 VGS=5V, 6V, 7V, 10V & 15V 24 18 4.5V 12 6 4V ID, DRAIN CURRENT (AMPERES) 24 18 4.5V 12 6 4V 0 0 30 20 TJ = -55C TJ = +125C 10 TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 8 4 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V GS 25 3.0 GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 VGS=10V 1.10 VGS=20V 1.05 1.00 0.95 0 8 16 24 32 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 D V 2.5 D 1.15 I = 0.5 I [Cont.] D NORMALIZED TO = 10V @ 0.5 I [Cont.] 1.20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 1.25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 120 240 360 480 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 VGS=5V, 6V, 7V, 10V & 15V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5576 Rev D ID, DRAIN CURRENT (AMPERES) 30 100S OPERATION HERE LIMITED BY RDS (ON) 10 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 10S 50 1mS 5 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE .5 .1 16 D VDS=120V VDS=240V 12 VDS=600V 8 1,000 Coss 500 Crss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] D 5,000 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 Ciss 100 1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 4 0 APT12080JVR 30,000 100 0 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150C TJ =+25C 10 5 1 .5 .1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) 050-5576 Rev D * Source Gate Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058