TELEFUNKEN Semiconductors TLSV5100
Rev. A1: 01.06.1995 1 (7)
Bicolor Symbol LED, 2.5 x 5 mm Untinted Top Diffused
Color Type Technology Angle of Half Intensity
±
ö
High efficiency red TLSV5100 GaAsP on GaP
50
°
Green GaP on GaP
50
°
Features
D
Even luminance of the emitting surface
D
Ideal as flush mounted panel indicators
D
For DC and pulse operation
D
Color mixing possible due to separate anode
terminals
D
Luminous intensity selected into groups
D
Categorized for green color
D
Wide viewing angle
D
Common cathode
96 11496
Applications
Indicating and illumination purposes.
TELEFUNKEN Semiconductors
TLSV5100
Rev. A1: 01.06.19952 (7)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TLSV5100
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage per diode VR6 V
DC forward current per diode IF30 mA
Surge forward current per diode tp ≤ 10
m
s IFSM 1 A
Power dissipation per diode Tamb ≤ 55
°
C PV100 mW
Total power dissipation Tamb ≤ 55
°
C Ptot 150 mW
Junction temperature Tj100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s, 2 mm
from body Tsd 260
°
C
Thermal resistance junction/ambient
per diode RthJA 450 K/W
Thermal resistance junction/ambient
total RthJA 300 K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TLSV5100 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Per diode
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 IV0.63 1 mcd
Dominant wavelength IF = 10 mA
l
d612 625 nm
Peak wavelength IF = 10 mA
l
p635 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage IF = 20 mA VF2 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Green (TLSV5100 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Per diode
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 IV0.63 1 mcd
Dominant wavelength IF = 10 mA
l
d562 575 nm
Peak wavelength IF = 10 mA
l
p565 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors TLSV5100
Rev. A1: 01.06.1995 3 (7)
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
25
50
75
100
125
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 9983
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
020406080
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 9984
50
Figure 2. Forward Current vs. Ambient Temperature
0.01 0.1 1 10
1
10
100
1000
10000
tp – Pulse Length ( ms )
100
95 10085
I – Forward Current ( mA )
F
tp/T=0.01 0.02 0.05
0.1
0.2
1
0.5
Tamb
v
55°C
Figure 3. Forward Current vs. Pulse Length
0.4 0.2 0 0.2 0.4 0.6
95 10082
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
02468
0.1
1
10
100
1000
10
95 10026 VF – Forward Voltage ( V )
I – Forward Current ( mA )
F
High Efficiency Red
tp/T=0.001
tp=10
m
s
Figure 5. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10027
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
High Efficiency Red
IF=10mA
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
TELEFUNKEN Semiconductors
TLSV5100
Rev. A1: 01.06.19954 (7)
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 High Efficiency Red
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 10029
I – Relative Luminous Intensity
v rel
High Efficiency Red
Figure 8. Relative Luminous Intensity vs. Forward Current
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 High Efficiency Red
Figure 9. Relative Luminous Intensity vs. Wavelength
02468
0.1
1
10
100
1000
10
95 10034 VF – Forward Voltage ( V )
I – Forward Current ( mA )
F
Green
tp/T=0.001
tp=10
m
s
Figure 10. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10035
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
IF=10mA
Green
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Green
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
TELEFUNKEN Semiconductors TLSV5100
Rev. A1: 01.06.1995 5 (7)
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 10037
I – Relative Luminous Intensity
v rel
Green
Figure 13. Relative Luminous Intensity vs. Forward Current
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 Green
Figure 14. Relative Luminous Intensity vs. Wavelength
TELEFUNKEN Semiconductors
TLSV5100
Rev. A1: 01.06.19956 (7)
Dimensions in mm
95 11327
TELEFUNKEN Semiconductors TLSV5100
Rev. A1: 01.06.1995 7 (7)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
