AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 3.5A RDS(ON) (at VGS=10V) < 50m RDS(ON) (at VGS = 4.5V) < 70m D1 TSOP6 Top View G1 1 2 6 5 D1 S2 G2 3 4 D2 S1 G1 Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current VGS TA=25C TA=25C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Mar 2011 Steady-State Steady-State 20 V A 1.15 W 0.73 TJ, TSTG Symbol t 10s Units V 3 PD Junction and Storage Temperature Range Maximum 30 20 IDM TA=70C S2 3.5 ID TA=70C Pulsed Drain Current C Power Dissipation B G2 S1 Gate-Source Voltage D2 Top View Bottom View RJA RJL www.aosmd.com -55 to 150 Typ 78 106 64 C Max 110 150 80 Units C/W C/W C/W Page 1 of 5 AO6802 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=125C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3.5A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance 100 nA 2 2.5 V 40 50 61 77 52 70 m 1 V 1.5 A 210 pF A m 12 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance A 5 VGS=10V, ID=3.5A Coss V TJ=55C VSD Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz S 35 pF 23 pF 3.5 5.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.5A 1.7 0.55 nC 1 nC 4.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=3.5A, dI/dt=100A/s 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/s 2.5 VGS=10V, VDS=15V, RL=4.2, RGEN=3 Turn-Off Fall Time 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar 2011 www.aosmd.com Page 2 of 5 AO6802 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 VDS=5V 10V 7V 8 9 ID(A) ID (A) 12 4V 4.5V 3.5V 6 125C 4 3 25C 2 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 70 VGS=10V ID=3.5A 1.6 60 RDS(ON) (m ) 6 VGS=4.5V 1.4 50 1.2 40 VGS=10V 30 VGS=4.5V ID=2A 1 17 5 2 10 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=3.5A 1.0E+01 40 1.0E+00 125C 80 IS (A) RDS(ON) (m ) 100 1.0E-01 125C 1.0E-02 60 25C 25C 1.0E-03 40 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Mar 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6802 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=15V ID=3.5A 250 Capacitance (pF) VGS (Volts) 8 Ciss 200 6 150 4 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 TA=25C 10s ID (Amps) RDS(ON) limited 100 100s 1ms 1.0 Power (W) 10.0 10 10ms TJ(Max)=150C TA=25C 0.1 10s DC 1 0.00001 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 1000 100 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=150C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 2: Mar 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 5 AO6802 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Mar 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5