Aug. 1999
20k 2k
200
2k
INPUT
COM
V
CC
OUTPUT
GND
The six circuits share the V
CC
, COM and GND.
The diodes shown by broken line are parasite diodes and must
not be used. Unit : Ω
1NC→
INPUTS OUTPUTS
NC : No connection
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O6
→O5
→O4
→O3
→O2
→O1
→V
CC
Outline 16P4(P)
Output, H
Current per circuit output, L
Pulse Width ≤ 35ms, Duty Cycle ≤ 5%
Ta = 25°C, when mounted on board
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION (TOP VIEW)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54539P
6-UNIT 700m A TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54539P six-circuit transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
●Medium breakdown voltage (BVCEO ≥ 20V)
●High-current driving (Ic(max) = 700mA)
●With output clamping diodes
●Wide operating temperature range (Ta = –20 to +75 °C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and drives of thermal printer
FUNCTION
The M54539P have six circuits consisting of NPN transistors.
Resistance of 2kΩ is connected to the inputs. The output
transistor emitters are connected to the GND pin (pin 8). A
spick-killer clamping diode is provided between each collec-
tor and COM pin (pin 9), VCC is connected to pin 16.
The collector current is 700 mA maximum. Collector-emitter
supply voltage is 20V maximum.
CIRCUIT SCHEMATIC
10
–0.5 ~ +20
700
–0.5 ~ +10
20
700
350
1.47
–20 ~ +75
–55 ~ +125
VCC
VCEO
IC
VI
VR
IF
Pd
Topr
Tstg
V
V
mA
V
V
mA
W
°C
°C
Ratings UnitSymbol Parameter Conditions
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Aug. 1999
V
CC
= 6.5V, The three outputs
conducting simultaneously
Percent duty cycle less than 20%
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
PG OUTPUT
50Ω
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 3V
P-P
(2) Input-output conditions : R
L
= 22.5Ω, V
O
= 10V, V
CC
= 5V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
C
L
Measured device
OPEN
INPUT V
O
V
CC
R
L
V
mA
—
—
0.46
0.2
0.75
—
1.5
27.5
8000
20
—
—
—
—
—
—
3000
V
(BR) CEO
ICC
hFE
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
VCE (sat)
V
V
V
V
5
—
—
—
7
20
6
0.3
0
0
—
—mA
3
0
3
0
700
200
—
0.8
0.45
1.4
100
2.7
50
—
VCC = 7V, ICEO = 100µA
VI = 3V, VCC = 5V, IC = 450mA
VI = 3V, VCC = 5V, IC = 200mA
VCC = 7V, VI = 3.2V
VR = 20V
IF = 350mA
VCC = 7V, VI = 3.2V (Per operating one circuit)
VCE = 4V, VCC = 6V, IC = 300mA, Ta = 25°C
Symbol UnitParameter Test conditions Limits
min typ+max
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
ton
toff
—
—16
1000 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Symbol Parameter min typ max Unit
Limits
VCC
VO
VIH
VIL
IC
Supply voltage
Output voltage
“H” input voltage
“L” input voltage
Collector current
per channel
V
CC
= 6.5V, The three outputs
conducting simultaneously
Percent duty cycle less than 90%
Collector-emitter breakdown voltage
Supply current
DC amplification factor
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time CL = 15pF (note 1)
Input current
Clamping diode reverse current
Clamping diode forward voltage
II
IR
VF
mA
µA
V
IC ≤ 450mA
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
Duty cycle (%)
•
The collector current
values represent the current
per circuit.
•
Repeated frequency ≥ 10Hz
•
The value in the circle
represents the
value of the simultaneously-
operated circuit.
•
V
CC
= 6.5V
•
Ta = 25°C
1
2
3
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
DC Amplification Factor
Collector Current Characteristics Grounded Emitter Transfer Characteristics
Duty cycle (%)
1
2
3
456
Collector current Ic (mA)
Collector current Ic (mA)
DC amplification factor h
FE
Input voltage V
I
(V)
Collector current Ic (mA)
0
200
400
600
800
0 0.2 0.4 0.6 0.8 1.0
Ta = –20°C
Ta = 25°C
Ta = 75°C
V
I
= 3V
V
CC
= 5V
Ta = –20°C
Ta = 25°C
Ta = 75°C
Ta = –20°C
Ta = 25°C
Ta = 75°C
V
CC
= 6V
V
CE
= 4V
Ta = –20°C
Ta = 25°C
Ta = 75°CTa = –20°C
Ta = 25°C
Ta = 75°C
V
CC
= 6V
V
CE
= 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
0
200
400
600
800
0 20406080100 0
200
400
600
800
0 20406080100
10
1
10
2
357
10
3
357
10
3
10
4
3
5
7
10
5
3
5
7
0
200
400
600
800
0 0.5 1.0 1.5 2.0 2.5
•
The collector current
values represent the
current per circuit.
•
Repeated frequency ≥ 10Hz
•
The value in the circle represents
the value of the simultaneously-
operated
circuit.
•
V
CC
= 6.5V
•
Ta = 75°C
456
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Input voltage VI (V)
0
0
1
2
3
4
5
246810
Input current II (mA)
Clamping Diode Characteristics
Forward bias voltage VF (V)
Forward bias current IF (mA)
VCC = 7V
Ta = –20°C
Ta = 25°C
Ta = 75°C
Ta = –20°C
Ta = 25°C
Ta = 75°C
Supply Current Characteristics
Supply voltage VCC (V)
0
0
10
20
30
40
50
246810
Supply current Icc (mA)
VI = 3.2V
Ta = –20°C
Ta = 25°C
Ta = 75°C
0
200
400
600
800
0 0.5 1.0 1.5 2.0 2.5
