IPB027N10N3 G (R) "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & V 9H )(( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D )# Q * E1<96954 13 3 ? B49>7 D? $ 6? BD1B75D1@@<9 3 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 8B? >? EC B53 D 96931D 9? > Q" 1<? 75> 6B55 13 3 ? B49 >7 D? # Type #) ' ' ! Package E=%ID*.+%+ Marking (*/C)(C Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9 6954 Parameter Symbol Conditions ? >D 9>E? EC 4B 19> 3 EBB5>D I9 T 8 T T 8 Value *# )*( T Unit 6 )*( ) E<C54 4B19> 3 EBB5>D*# I 9$\aX_Q T 8 T ,0( F1<1>3 85 5>5B7I C9 >7<5 @E<C5 E 6H I 9 )((( Y@ !1D5 C? EB35 F? <D175 V =H q*( J ) ? G5B49CC9@1D9? > P [ +(( K ( @5B1D9>7 1>4 CD? B 175 D5=@5B1DEB5 T V T _S T 8 T # 3 <9=1D 93 3 1D57? BI #' # )# *# + 5F $ , - R =H " T 1>4 $ , , 55 697EB 5 @175 IPB027N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&- Thermal characteristics -85B=1<B5C9 CD1>3 5 :E>3 D9 ? > 3 1C5 R T@8 -85B=1<B5C9 CD1>3 5 R T@6 =9>9 =1<6? ? D@B9>D 3 = * 3 ? ? <9 >7 1B51+# :E>3 D 9? > 1=2 9 5>D A'K % % ,( )(( % % Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954 Static characteristics B19> C? EB35 2 B51;4? G> F? <D175 V "7G#9HH V =H . I 9 = !1D5 D8B5C8? <4 F? <D175 V =H"T# V 9H4V =H I 9 V * *&/ +&- 05B? 71D5 F? <D175 4B 19> 3 EBB5>D I 9HH V 9H . V =H T V T . % (&) ) V 9H . V =H T V T . % )( )(( J r6 !1D5 C? EB35 <51;175 3 EBB5>D I =HH V =H . V 9H . % ) )(( Z6 B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# V =H . I 9 % *&+ *&/ Y" % *&0 ,&- % )&1 % " 1, )00 % H V =H . I 9 !1D5 B5C9CD 1>3 5 R= I^MZ_O[ZPaOMZOQ g R_ +# 5F935 ? > == H == H == 5@? HI ) 3 ? >>53 D 9? > ) 9C F5B D931<9> CD 9<<19B + 5F gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 + G9D8 3 =* ? >5 <1I5B @175 V=D 893; 3 ? @@5B1B 51 6? B4B 19> IPB027N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % )))(( ),0(( \< % )1,( *-0( Dynamic characteristics #>@ED3 1@13 9D1>3 5 C U__ V =H . V 9H f & " J . ( ED@ED3 1@13 9 D1>3 5 C [__ + 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^__ % .1 % -EB> ? > 45<1I D9=5 t P"[Z# % +, % + 9C5 D9 =5 t^ % -0 % -EB> ? 6645<1I D9=5 t P"[RR# % 0, % tR % *0 % !1D5 D? C? EB35 3 81B75 Q S_ % ,0 % !1D5 D? 4B19> 3 81B75 Q SP % */ % % ,* % 1<<D9 =5 V 99 . V =H . I 9 R = " Z_ !1D5 81BS5 81B13 D5B9 CD 93C,# V 99 . I 9 V =H D? . Z8 , G9D389 >7 3 81B75 Q _c !1D5 3 81B75 D? D 1< QS % )-- *(. !1D5 @<1D51E F? <D 175 V \XMQMa % ,&+ % ( ED@ED3 81B75 Q [__ % *(- */+ Z8 % % )*( 6 % % ,0( % ) )&* J % 0. % Z_ % *+* % Z8 V 99 . V =H . J Reverse Diode 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB 5>D IH 9? 45 @E<C5 3 EBB 5>D I H$\aX_Q 9? 45 6? BG1B4 F? <D175 V H9 + 5F5BC5 B53 ? F5BI D9 =5 t ^^ + 5F5BC5 B53 ? F5BI 3 81B 75 Q ^^ ,# + 5F T 8 T V =H . I < T V T V G . I <4100 A Pi <'Pt VC , 55 697EB 5 6? B71D5 3 81B 75 @1B1=5D5B4569>9D 9? > @175 IPB027N10N3 G 2 Drain current P [4R"T 8# I 94R"T 8 V =H" 350 140 300 120 250 100 200 80 . I D [A] P tot [W] 1 Power dissipation 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 T C [C] 100 150 200 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9H T 8 T D 4( Z T@84R"t \# @1B1=5D5B t \ @1B1=5D5B D 4t \'T 103 100 <9=9D 54 2 I ? > CD 1D5 ^Q_U_MZOQ VC VC VC 102 (&- Z thJC [K/W] I D [A] =C =C 10 1 98 (&* 10 -1 (&) (&(- 100 (&(* (&() C9>7<5 @E<C5 10-1 10-1 10-2 100 101 102 103 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] + 5F 10-5 @175 IPB027N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9H T V T R 9H"[Z#4R"I 9 T V T @1B 1=5D5B V =H @1B1=5D5B V =H 300 5 . . . . 250 4 . . . R DS(on) [m ] I D [A] 200 150 3 . . . 2 . 100 1 50 0 0 ( 0 1 2 0 40 V DS [V] 80 120 160 120 160 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H K V 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9 T V T 300 240 250 200 200 160 g fs [S] I D [A] @1B 1=5D5B T V 150 100 120 80 T 50 40 T 0 0 0 2 4 6 + 5F 0 40 80 I D [A] V GS [V] @175 IPB027N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T V I 9 V =H"T#4R"T V V =H4V 9H V =H . @1B1=5D5B I9 6 4 3.5 5 3 V 2.5 V GS(th) [V] R DS(on) [m ] 4 3 e\ V 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 11 Typ. capacitances C 4R"V 9H V =H . f 60 100 140 180 T j [C] T j [C] 12 Forward characteristics of reverse diode & " J I <4R"V H9# @1B1=5D5B TV 105 103 8U__ T 104 T 102 I F [A] C [pF] 8[__ 103 T T 101 8^__ 102 101 100 0 20 40 60 80 V DS [V] + 5F 0 0.5 1 1.5 2 V SD [V] @175 IPB027N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6J R =H " V =H4R"Q SMQ I 9 @1B 1=5D5B T V"_M^# @1B1=5D5B V 99 1000 @E<C54 10 8 . 100 T . 6 V GS [V] I AS [A] T T . 4 10 2 1 0 1 10 100 1000 0 40 15 Drain-source breakdown voltage V 7G"9HH#4R"T V I 9 80 120 160 Q gate [nC] t AV [s] 16 Gate charge waveforms = 110 V =H Qg V BR(DSS) [V] 105 100 V S _"T# 95 Q S "T# Q _c Q S_ 90 -60 -20 20 60 100 140 Q g ate Q SP 180 T j [C] + 5F @175 IPB027N10N3 G PG-TO263-3: Outline + 5F @175 IPB027N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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