TGL6425-SCC - TriQuint Semiconductor

6425

TGL6425-SCC Digital Attenuator

●0.5 to 18-GHz Frequency Range

●5- Bit Step Attenuator

●15.5-dB Attenuation Range

●4-dB Typical Insertion Loss

●1.6:1 Input/Output SWR

●2,1844 x 1,8288 x 0,1016 mm (0.086 x 0.072 x 0.004 in.)

The TriQuint TGL6425-SCC is a GaAs MMIC 5- bit FET attenuator which operates from

0.5 to 18-GHz. The attenuation step is 0.5- dB and is controlled by 10 input lines. Control bias voltages

are 0 V and -5 V. The input and output return loss is typically 13 - dB.

This unique absorptive design combines both “T”and “PI”configurations to produce an extremely

small size and low inser tion loss attenuator. The small size and reliability advantage of a monolithic

attenuator over a hybrid design make this device attractive for use in electronic warfare, radar,

telecommunication, and navigation systems for level set, modulation and switching functions.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment

method as well as the thermocompression and thermosonic wire bonding processes. Ground is

provided to the circuitry through vias to the backside metallization.

PHOTO ENLARGEMENT

DESCRIPTION

TriQuint Semiconductor, Inc.

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T R I Q U I N T S E M I C O N D U C T O R , I N C .

TGL6425-SCC

TYPICAL ATTENUATION

-25

-20

-15

-10

-5

024681012141618

Frequency (GHz)

Attenuation (dB)

Attenuation

State:

TYPICAL

INPUT POWER

P1dB

0369121518

Frequency (GHz )

Input Power (dBm)

Attenuation

State:

TYPICAL

INPUT RETURN LOSS

0369121518

Frequency (GHz )

Input Return Loss (dB)

Attenuation

State:

TA= 25°C

0 dB

2 dB

4 dB

8 dB

15.5 dB

TA= 25°C

0 dB

2 dB

4 dB

8 dB

15.5 dB

T = 25°C

0 dB

2 dB

4 dB

8 dB

15.5 dB

TriQuint Semiconductor, Inc.

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Texas Facilities

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TGL6425-SCC

TYPICAL

OUTPUT RETURN LOSS

0369121518

Frequency (GHz )

Output Return Loss (dB)

0dB

2dB

4dB

8dB

15.5dB

Attenuation

State:

ABSOLUTE

MAXIMUM RATINGS

Input continuous wave power , PIN .......................................................................................................... 1 W

Control voltage range, V1, V2, V3, V4, V5, V6, V7, V8, V9, V10 ................................................

10 V to 0 V

Operating channel temperature, TCH

* ................................................................................................ 150 °C

Mounting temperature (30 sec), TM .................................................................................................... 320°C

Storage temperature range, TSTG ............................................................................................

65 to 150°C

Ratings over operating channel temperature range, TCH (unless otherwise noted)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only and functional operation of the device at these or any other conditions beyond

those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for

extended periods may affect device reliability.

*Operating channel temperature, TCH, will directly affect the device MTTF . For maximum life, it is recommended

that channel temperature be maintained at the lowest possible level.

RF CHARACTERISTICS PARAMETER TEST CONDITIONS TYPICAL UNIT

Attenuation see next table dB

SWR(in) Input standing wave ratio f = 2 - 18 GHz (all states) 1.6:1 -

SWR(out) Output standing wave ratio f = 2 - 18 GHz (all states) 1.4:1 -

P1dB(in) Input power at 1-dB gain compression see next table dBm

TA = 25°C

TA= 25°C

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TGL6425-SCC

BIAS TRUTH TABLE ATTEN

STATE V

1V 2V 3V 4V 5V 6V 7V 8V 9V 10

(dB)

0.0-50-5-5-50000-5

0.5-50-5-5-500000

1.0 -5 0 -5 -5 0 0 -5 -5 0 -5

1.5 -5 0 -5 -5 0 0 -5 -5 0 0

2.0-50-50-5-500-5-5

2.5-50-50-5-500-50

3.0 -5 0 -5 0 0 -5 0 -5 -5 -5

3.5 -5 0 -5 0 0 -5 0 -5 -5 0

4.0-500-5-5-5-500-5

4.5-500-5-5-5-5000

5.0-500-50-5-50-5-5

5.5-500-50-5-50-50

6.0 -5 0 0 0 -5 -5 -5 -5 0 -5

6.5 -5 0 0 0 -5 -5 -5 -5 0 0

7.0-50000-5-5-5-5-5

7.5-50000-5-5-5-50

8.00-5-5-5-50000-5

8.50-5-5-5-500000

9.0 0 -5 -5 -5 0 0 -5 -5 0 -5

9.5 0 -5 -5 -5 0 0 -5 -5 0 0

10.0 0 -5 -5 0 -5 -5 0 0 -5 -5

10.5 0 -5 -5 0 -5 -5 0 0 -5 0

11.0 0 -5 -5 0 0 -5 0 -5 -5 -5

11.5 0 -5 -5 0 0 -5 0 -5 -5 0

12.0 0 -5 0 -5 -5 -5 -5 0 0 -5

12.5 0 -5 0 -5 -5 -5 -5 0 0 0

13.0 0 -5 0 -5 0 -5 -5 0 -5 -5

13.5 0 -5 0 -5 0 -5 -5 0 -5 0

14.0 0 -5 0 0 -5 -5 -5 -5 0 -5

14.5 0 -5 0 0 -5 -5 -5 -5 0 0

15.0 0 -5 0 0 0 -5 -5 -5 -5 -5

15.5 0 -5 0 0 0 -5 -5 -5 -5 0

ATTENUATION TYPICAL TYPICAL INPUT POWER

STATE VARIANCE

1–dB Gain Compression

(dB)

TYPICAL

ATTENUATION

at 9 GHz (dB) at 9 GHz (dB) 2-18 GHz (dBm)

0 3.6 ± 0.25 28

0.5 4.1 ± 0.25 28

1 4.4 ± 0.25 29

2 5.7 ± 0.25 29

4 7.6 ± 0.25 29

8 12.1 ± 0.45 20

15.5 19.7 ± 0.7 20

RF CHARACTERISTICS

TriQuint Semiconductor, Inc.

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Texas Facilities

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TGL6425-SCC

EQUIVALENT

SCHEMATIC

V10

OUTPUT

INPUT

2 - 290mm

2 - 62mm

2 - 32mm

2 - 16mm 2 - 30mm 2 - 16mm

2 - 32mm

2 - 62mm

2 - 50mm

2 - 55mm

2 - 70mm

2 - 186mm

100mm

BIAS NETWORK

3245

RF Input RF Output

TGL6425

1112 10 9 8

V1V2

V3V5V10

V9V8V6V7V4

All bias resistors have a nominal value of 25 - Ohms.

RF connections: Bond using two 1-mil diameter , 20 to 25-mil- length gold bond wires at both RF Input and

RF Output for optimum RF performance.

DC blocks are not provided at RF ports.

Close placement of external components is essential to resonant-free performance.

TriQuint Semiconductor, Inc.

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TGL6425-SCC

MECHANICAL DRAWING

1,3970 (0.055)

2,0396 (0.0803)

1,0592 (0.0417)

2,1844 (0.0860)

1,7145 (0.0675)

1,3691 (0.0539)

1,1049 (0.0435)

0,8077 (0.0318)

0,5029 (0.0198)

0.0

0,1880 (0.0074)

1,0592 (0.0417)

1,6358 (0.0644)

1,8288 (0.0720)

23456

89101112

Units: Millimeters (inches)

Thickness: 0,102 (0.004) (reference only)

Chip edge to bond pad dimensions are shown to center of bond pad.

Chip size ±0,0508 (0.002)

Bond pad #1 (RF In): 0,127 x 0,207 (0.0050 x 0.0082) Bond pad #7 (RF Out): 0,246 x 0,119 (0.0097 x 0.0047)

Bond pad #2 (V1): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #8 (V4): 0,120 x 0,120 (0.0047 x 0.0047)

Bond pad #3 (V3): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #9 (V7): 0,120 x 0,120 (0.0047 x 0.0047)

Bond pad #4 (V2): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad 1#0 (V6): 0,120 x 0,120 (0.0047 x 0.0047)

Bond pad #5 (V5): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #11 (V8): 0,120 x 0,120 (0.0047 x 0.0047)

Bond pad #6 (V10): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #12 (V9): 0,120 x 0,120 (0.0047 x 0.0047)

TriQuint Semiconductor, Inc.

•

Texas Facilities

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(972) 995-8465

• www.triquint.com

TGL6425-SCC

Application Notes: Suggested Driver Circuit

OVERVIEW

DRIVER CIRCUIT

SCHEMATIC

The following is a suggested driver circuit for the TriQuint TGL6425-SSC 0.5 to 18 - Ghz

step attenuator. The circuit allows the user to use a digital binary input to achieve the desired level

of attenuation; with a digital word of “00000” equaling0 -dB relative attenuation and “11111”

equaling 15.5- dB relative attenuation. The JFET s (2N5116 or equivalent) provide the r equired level

shift from TTL voltages to attenuation control levels. The 2 - input NOR gates should be CMOS

(74C02 or equivalent) with 0 V applied to the positive supply terminal and

5 V on the negative

supply terminal.

~ 5k Ohms

TriQuint Semiconductor, Inc.

•

Texas Facilities

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(972) 995-8465

• www.triquint.com