A2F200M3F-FGG484Y - Microsemi Corp.

August 2011 I

SmartFusion Customizable System-on-Chip (cSoC)

Microcontroller Subsystem (MSS)

• Hard 100 MHz 32-Bit ARM® Cortex™-M3

– 1.25 DMIPS/MHz Throughput from Zero Wait State

Memory

– Memory Protection Unit (MPU)

– Single Cycle Multiplication, Hardware Divide

– JTAG Debug (4 wires), Serial Wire Debug (SWD, 2

wires), and Single Wire Viewer (SWV) Interfaces

• Internal Memory

– Embedded Nonvolatile Flash Memory (eNVM), 128

Kbytes to 512 Kbytes

– Embedded High-Speed SRAM (eSRAM), 16 Kbytes

to 64 Kbytes, Implemented in 2 Physical Blocks to

Enable Simultaneous Access from 2 Different

Masters

• Multi-Layer AHB Communications Matrix

– Provides up to 16 Gbps of On-Chip Memory

Bandwidth,1 Allowing Multi-Master Schemes

• 10/100 Ethernet MAC with RMII Interface2

• Programmable External Memory Controller, Which

Supports:

– Asynchronous Memories

– NOR Flash, SRAM, PSRAM

– Synchronous SRAMs

•Two I

2C Peripherals

• Two 16550 Compatible UARTs

• Two SPI Peripherals

• Two 32-Bit Timers

• 32-Bit Watchdog Timer

• 8-Channel DMA Controller to Offload the Cortex-M3

from Data Transactions

• Clock Sources

– 32 KHz to 20 MHz Main Oscillator

– Battery-Backed 32 KHz Low Power Oscillator with

Real-Time Counter (RTC)

– 100 MHz Embedded RC Oscillator; 1% Accurate

– Embedded Analog PLL with 4 Output Phases (0, 90,

180, 270)

High-Performance FPGA

• Based on proven ProASIC®3 FPGA Fabric

• Low Power, Firm-Error Immune 130-nm, 7-Layer Metal,

Flash-Based CMOS Process

• Nonvolatile, Live at Power-Up, Retains Program When

Powered Off

• 350 MHz System Performance

• Embedded SRAMs and FIFOs

– Variable Aspect Ratio 4,608-Bit SRAM Blocks

– x1, x2, x4, x9, and x18 Organizations

– True Dual-Port SRAM (excluding x18)

– Programmable Embedded FIFO Control Logic

• Secure ISP with 128-Bit AES via JTAG

• FlashLock® to Secure FPGA Contents

• Five Clock Conditioning Circuits (CCCs) with up to 2

Integrated Analog PLLs

– Phase Shift, Multiply/Divide, and Delay Capabilities

– Frequency: Input 1.5–350 MHz, Output 0.75 to

350 MHz

Programmable Analog

Analog Front-End (AFE)

• Up to Three 12-Bit SAR ADCs

– 500 Ksps in 12-Bit Mode

– 550 Ksps in 10-Bit Mode

– 600 Ksps in 8-Bit Mode

• Internal 2.56 V Reference or Optional External

Reference

• One First-Order ΣΔ DAC (sigma-delta) per ADC

– 12-Bit 500 Ksps Update Rate

• Up to 5 High-Performance Analog Signal Conditioning

Blocks (SCB) per Device, Each Including:

– Two High-Voltage Bipolar Voltage Monitors (with 4

input ranges from ±2.5 V to –11.5/+14 V) with 1%

Accuracy

– High Gain Current Monitor, Differential Gain = 50, up

to 14 V Common Mode

– Temperature Monitor (Resolution = ¼°C in 12-Bit

Mode; Accurate from –55°C to 150°C)

• Up to Ten High-Speed Voltage Comparators

(tpd =15ns)

Analog Compute Engine (ACE)

• Offloads Cortex-M3–Based MSS from Analog

Initialization and Processing of ADC, DAC, and SCBs

• Sample Sequence Engine for ADC and DAC Parameter

Set-Up

• Post-Processing Engine for Functions such as Low-

Pass Filtering and Linear Transformation

• Easily Configured via GUI in Libero® Integrated Design

(IDE) Software

I/Os and Operating Voltage

• FPGA I/Os

– LVDS, PCI, PCI-X, up to 24 mA IOH/IOL

– Up to 350 MHz

• MSS I/Os

– Schmitt Trigger, up to 6 mA IOH, 8 mA IOL

– Up to 180 MHz

• Single 3.3 V Power Supply with On-Chip 1.5 V Regulator

• External 1.5 V Is Allowed by Bypassing Regulator

(digital VCC = 1.5 V for FPGA and MSS, analog VCC =

3.3 V and 1.5 V)

1 Theoretical maximum

2 A2F200 and larger devices

Revision 7

SmartFusion Custo m izable System-on-Chip (cSoC)

II Revision 7

SmartFusion cSoC Family Product Table

SmartFusion cSoC A2F060 A2F200 A2F500

FPGA Fabric System Gates 60,000 200,000 500,000

Tiles (D-flip-flops) 1,536 4,608 11,520

RAM Blocks (4,608 bits) 8 8 24

Microcontroller

Subsystem (MSS)

Flash (Kbytes) 128 256 512

SRAM (Kbytes) 16 64 64

Cortex-M3 with memory protection unit (MPU) Yes

10/100 Ethernet MAC No Yes

External Memory Controller (EMC) 24-bit address,16-bit data1

DMA 8 Ch

I2C 2

SPI 2

16550 UART 2

32-Bit Timer 2

PLL 1 1 22

32 KHz Low Power Oscillator 1

100 MHz On-Chip RC Oscillator 1

Main Oscillator (32 KHz to 20 MHz) 1

Programmable

Analog

ADCs (8-/10-/12-bit SAR) 1 2 34

DACs (12-bit sigma-delta) 1 2 34

Signal Conditioning Blocks (SCBs) 1 4 54

Comparator328 10

Current Monitors3 14 5

Temperature Monitors314 5

Bipolar High Voltage Monitors328 10

Notes:

1. Not available on A2F500 for the PQ208 package.

2. Two PLLs are available in CS288 and FG484 (one PLL in FG256 and PQ208).

3. These functions share I/O pins and ma y not all be available at the same time. See the "Analog Front-End Overvie w" secti on in

the SmartFusion Prog ra mma b l e An al o g Us er’s Guide for details.

4. Available on FG484 only. PQ208, FG256, and CS288 packages offer the same programmable analog capabilities as A2F200.

SmartFusion Customizable System-on-Ch ip (cSoC)

Revisi o n 7 III

Package I/Os: MSS + FPGA I/Os

SmartFusion cSoC Device Status

Device A2F060 A2F200 A2F500

Package CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484

Direct Analog Inputs 11 11 8 8 8 8 8 8 8 12

Shared Analog Inputs14 4 16 16 16 16 16 16 16 20

Total Analog Inputs 15 15 24 24 24 24 24 24 24 32

Total Analog Outputs 1 1 1 2 2 2 1 2 2 3

MSS I/Os2,3 28426422 31 25 41 22 31 25 41

FPGA I/Os 68 66 66 78 66 94 66 78 66 1285

Total I/Os 112 108 113 135 117 161 113 135 117 204

Notes:

1. These pins are shared between direct analog inp uts to the ADCs and voltage/current/temperatu r e monitors.

2. 16 MSS I/Os are multiplexed and can be u sed as FPGA I/Os, if not needed for MSS. These I/Os support Schmitt trig gers and

support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V) standards.

3. 9 MSS I/Os are primarily for 10/100 Ethernet MAC and are also multiplexed and can be used as FPGA I/Os if Ethernet MAC is

not used in a design. These I/Os support Schmitt triggers and support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V

standards.

4. 10/100 Ethernet MAC is not available on A2F060.

5. EMC is not available on the A2F500 PQ208 package.

Device Status

A2F060 Preliminary: CS288, FG256

A2F200 Production: FG256, FG484, PQ208

Preliminary: CS288

A2F500 Production: FG256, FG484, PQ208

Preliminary: CS288

SmartFusion Custo m izable System-on-Chip (cSoC)

IV Revision 7

SmartFusion cSoC Block Diagram

Legend:

SDD – Sigma-delta DAC

SCB – Signal conditioning block

PDMA – Peripheral DMA

IAP – In-application programming

ABPS – Active bipolar prescaler

WDT – Watchdog Timer

SWD – Serial Wire Debug

Microcontroller Subsystem

Programmable Analog

FPGA Fabric

SRAM SRAM SRAM SRAM SRAM SRAM

SysReg

ENVM

10/100

EMAC

ESRAM

Timer2

Timer1

APB

I2C 2

UART 2

SPI 2

DAC

(SDD)

DAC

(SDD)

PPB

........

............

VersaTiles

3 V

I2C 1

UART 1

SPI 1

IAP PDMA APB EMC

AHB Bus Matrix

EFROM

APB

Sample Sequencing

Engine

Post Processing

Engine

ADC

Analog Compute

Engine

PLL

Supervisor

WDT

OSC

32 KHz

–

RTC

JTAG

Cortex™

-M3

SWD

NVIC SysTick

MPU

SD I

Volt Mon.

(ABPS)

Temp.

Mon.

SCB

Curr.

Mon. Comparator

ADC

Volt Mon.

(ABPS)

Temp.

Mon.

SCB

Curr.

Mon. Comparator

............

....

SmartFusion Customizable System-on-Ch ip (cSoC)

Revisi o n 7 V

SmartFusion cSoC System Architecture

Note: Architecture for A2F200

Bank 4 Bank 5

Bank 0

Bank 3

Bank 1 Bank 2

PLL/CCC MSS FPGA Analog

ISP AES Decryption Charge Pumps

Embedded NVM

(eNVM)

Cortex-M3 Microcontroller Subsystem (MSS)

Embedded SRAM

(eSRAM)

Embedded FlashROM

(eFROM)

SCB SCB ADC and DAC ADC and DAC SCB SCB

Osc. CCC

SmartFusion Custo m izable System-on-Chip (cSoC)

VI Revision 7

Product Ordering Codes

Temperature Grade Offerings

Note: *Most devices in the SmartFusion cSoC family can be ordered with the Y suffix. D evice s with a package size greater or equal to

5x5 mm are supported. Contact your local Microsemi SoC Products Group sales re presentative fo r more information.

SmartFusion cSoC A2F060 A2F200 A2F500

PQ208 – C, I C, I

CS288 C, I C, I C, I

FG256 C, I C, I C, I

FG484 – C, I C, I

Notes:

1. C = Commercial Temperature Range: 0°C to 85°C Junction

2. I = Industrial Temperature Range: –40°C to 100°C Junction

A2F200 FG

Part Number

SmartFusion Devices

Speed Grade

–1 = 100 MHz MSS Speed; FPGA Fabric 15% Faster than Standard

= 80 MHz MSS Speed; FPGA Fabric at Standard Speed

CPU Type

M3 = Cortex-M3

Package Type

484 IG

Package Lead Count

256

208

288

484

Application (junction temperature range)

Security Feature*

Y = Device Includes License to Implement IP Based on the

Cryptography Research, Inc. (CRI) Patent Portfolio

Blank = Commercial (0 to +85°C)

I = Industrial (–40 to +100°C)

ES = Engineering Silicon (room temperature only)

200,000 System Gates

A2F200 =

60,000 System Gates

A2F060 =

500,000 System Gates

A2F500 =

PQ =Plastic Quad Flat Pack (0.5 mm pitch)

FG =Fine Pitch Ball Grid Array (1.0 mm pitch)

CS =Chip Scale Package (0.5 mm pitch)

eNVM Size

A= 8 Kbytes

B=16 Kbytes

C=32 Kbytes

D=64 Kbytes

E=128 Kbytes

F=256 Kbytes

G=512 Kbytes

Lead-Free Packaging Options

H = Halogen-Free Packaging

G = RoHS-Compliant (green) Packaging

Blank = Standard Packaging

Blank

SmartFusion Customizable System-on-Chip (cSoC)

Revisi o n 7

Table of Content s

SmartFusion Family Overview

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

SmartFusion DC and Switching Characteristics

General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1

Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10

User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-19

VersaTile Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-55

Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-59

RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-61

Main and Lower Power Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62

Clock Conditioning Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-63

FPGA Fabric SRAM and FIFO Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-65

Embedded Nonvolatile Memory Block (eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-74

Embedded FlashROM (eFROM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75

JTAG 1532 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75

Programmable Analog Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76

Serial Peripheral Interface (SPI) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-88

Inter-Integrated Circuit (I2C) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-90

SmartFusion Development Tools

Types of Design Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1

SmartFusion Ecosystem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3

Middleware . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5

SmartFusion Programming

In-System Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-7

In-Application Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-8

Typical Programming and Erase Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-9

References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-9

Pin Descriptions

Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1

User-Defined Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4

User Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-5

Special Function Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6

JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8

Microcontroller Subsystem (MSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-10

Analog Front-End (AFE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12

Analog Front-End Pin-Level Function Multiplexing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-14

CS288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16

PQ208 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-26

FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-33

FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-42

Table of Contents

Revision 7

Datasheet Information

List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1

Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-10

Microsemi SoC Products Group Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . 6-10

Revision 7 1-1

1 – SmartFusion Family Overview

Introduction

The SmartFusion® family of cSoCs builds on the technology first introduced with the Fusion mixed signal

FPGAs. SmartFusion cSoCs are made possible by integrating FPGA technology with programmable

high-performance analog and hardened ARM Cortex-M3 microcontroller blocks on a flash semiconductor

process. The SmartFusion cSoC takes its name from the fact that these three discrete technologies are

integrated on a single chip, enabling the lowest cost of ownership and smallest footprint solution to you.

General Description

Microcontroller Subsystem (MSS)

The MSS is composed of a 100 MHz Cortex-M3 processor and integrated peripherals, which are

interconnected via a multi-layer AHB bus matrix (ABM). This matrix allows the Cortex-M3 processor,

FPGA fabric master, Ethernet message authentication controller (MAC), when available, and peripheral

DMA (PDMA) controller to act as masters to the integrated peripherals, FPGA fabric, embedded

nonvolatile memory (eNVM), embedded synchronous RAM (eSRAM), external memory controller

(EMC), and analog compute engine (ACE) blocks.

SmartFusion cSoCs of different densities offer various sets of integrated peripherals. Available

peripherals include SPI, I2C, and UART serial ports, embedded FlashROM (EFROM), 10/100 Ethernet

MAC, timers, phase-locked loops (PLLs), oscillators, real-time counters (RTC), and peripheral DMA

controller (PDMA).

Programmable Analog

Analog Front-End (AFE)

SmartFusion cSoCs offer an enhanced analog front-end compared to Fusion devices. The successive

approximation register analog-to-digital converters (SAR ADC) are similar to those found on Fusion

devices. SmartFusion cSoC also adds first order sigma-delta digital-to-analog converters (SDD DAC).

SmartFusion cSoCs can handle multiple analog signals simultaneously with its signal conditioning blocks

(SCBs). SCBs are made of a combination of active bipolar prescalers (ABPS), comparators, current

monitors and temperature monitors. ABPS modules allow larger bipolar voltages to be fed to the ADC.

Current monitors take the voltage across an external sense resistor and convert it to a voltage suitable

for the ADC input range. Similarly, the temperature monitor reads the current through an external PN-

junction (diode or transistor) and converts it internally for the ADC. The SCB also includes comparators

to monitor fast signal thresholds without using the ADC. The output of the comparators can be fed to the

analog compute engine or the ADC.

Analog Compute Engine (ACE)

The mixed signal blocks found in SmartFusion cSoCs are controlled and connected to the rest of the

system via a dedicated processor called the analog compute engine (ACE). The role of the ACE is to

offload control of the analog blocks from the Cortex-M3, thus offering faster throughput or better power

consumption compared to a system where the main processor is in charge of monitoring the analog

resources. The ACE is built to handle sampling, sequencing, and post-processing of the ADCs, DACs,

and SCBs.

SmartFusion Family Overview

1-2 Revision 7

ProASIC3 FPGA Fabric

The SmartFusion cSoC family, based on the proven, low power, firm-error immune ProASIC®3 flash

FPGA architecture, benefits from the advantages only flash-based devices offer:

Reduced Cost of Ownership

Advantages to the designer extend beyond low unit cost, high performance, and ease of use. Flash-

based SmartFusion cSoCs are live at power-up and do not need to be loaded from an external boot

PROM at each power-up. On-board security mechanisms prevent access to the programming

information and enable secure remote updates of the FPGA logic. Designers can perform secure remote

in-system programming (ISP) to support future design iterations and critical field upgrades, with

confidence that valuable IP cannot be compromised or copied. Secure ISP can be performed using the

industry standard AES algorithm with MAC data authentication on the device.

Low Power

Flash-based SmartFusion cSoCs exhibit power characteristics similar to those of an ASIC, making them

an ideal choice for power-sensitive applications. With SmartFusion cSoCs, there is no power-on current

and no high current transition, both of which are common with SRAM-based FPGAs.

SmartFusion cSoCs also have low dynamic power consumption and support very low power time-

keeping mode, offering further power savings.

Security

As the nonvolatile, flash-based SmartFusion cSoC family requires no boot PROM, there is no vulnerable

external bitstream. SmartFusion cSoCs incorporate FlashLock®, which provides a unique combination of

reprogrammability and design security without external overhead, advantages that only a device with

nonvolatile flash programming can offer.

SmartFusion cSoCs utilize a 128-bit flash-based key lock and a separate AES key to provide security for

programmed IP and configuration data. The FlashROM data in Fusion devices can also be encrypted

prior to loading. Additionally, the flash memory blocks can be programmed during runtime using the AES-

128 block cipher encryption standard (FIPS Publication 192).

SmartFusion cSoCs with AES-based security are designed to provide protection for remote field updates

over public networks, such as the Internet, and help to ensure that valuable IP remains out of the hands

of system overbuilders, system cloners, and IP thieves. As an additional security measure, the FPGA

configuration data of a programmed Fusion device cannot be read back, although secure design

verification is possible. During design, the user controls and defines both internal and external access to

the flash memory blocks.

Security, built into the FPGA fabric, is an inherent component of the SmartFusion cSoC family. The flash

cells are located beneath seven metal layers, and many device design and layout techniques have been

used to make invasive attacks extremely difficult. SmartFusion cSoCs, with FlashLock and AES security,

are unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is

protected with industry standard security measures, making remote ISP feasible. A SmartFusion cSoC

provides the highest security available for programmable logic designs.

Single Chip

Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the

configuration data is an inherent part of the FPGA structure, and no external configuration data needs to

be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based SmartFusion

cSoCs do not require system configuration components such as electrically erasable programmable

read-only memories (EEPROMs) or microcontrollers to load device configuration data during power-up.

This reduces bill-of-materials costs and PCB area, and increases system security and reliability.

Live at Power-Up

Flash-based SmartFusion cSoCs are live at power-up (LAPU). LAPU SmartFusion cSoCs greatly

simplify total system design and reduce total system cost by eliminating the need for complex

programmable logic devices (CPLDs). SmartFusion LAPU clocking (PLLs) replace off-chip clocking

resources. In addition, glitches and brownouts in system power will not corrupt the SmartFusion flash

configuration. Unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is

restored. This enables reduction or complete removal of expensive voltage monitor and brownout

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 1-3

detection devices from the PCB design. Flash-based SmartFusion cSoCs simplify total system design

and reduce cost and design risk, while increasing system reliability.

Immunity to Firm Errors

Firm errors occur most commonly when high-energy neutrons, generated in the atmosphere, strike a

configuration cell of an SRAM FPGA. The energy of the collision can change the state of the

configuration cell and thus change the logic, routing, or I/O configuration behavior in an unpredictable

way.

Another source of radiation-induced firm errors is alpha particles. For alpha radiation to cause a soft or

firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in

the package molding compound or in the die itself. While low-alpha molding compounds are being used

increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors.

Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a

complete system failure. Firm errors do not occur in SmartFusion cSoCs. Once it is programmed, the

flash cell configuration element of SmartFusion cSoCs cannot be altered by high energy neutrons and is

therefore immune to errors from them. Recoverable (or soft) errors occur in the user data SRAMs of all

FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry

built into the FPGA fabric.

Revision 7 2-1

2 – SmartFusion DC and Switching Characteristics

General Specifications

Operating Conditions

Stresses beyond the operating conditions listed in Table 2-1 may cause permanent damage to the

device.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any

other conditions beyond those listed under the Recommended Operating Conditions specified in

Table 2-3 on page 2-3 is not implied.

Table 2-1 • Absolute Maximum Ratings

Symbol Parameter Limits Units

VCC DC core supply voltage –0.3 to 1.65 V

VJTAG JTAG DC voltage –0.3 to 3.75 V

VPP Programming voltage –0.3 to 3.75 V

VCCPLLx Analog power supply (PLL) –0.3 to 1.65 V

VCCFPGAIOBx DC FPGA I/O buffer supply voltage –0.3 to 3.75 V

VCCMSSIOBx DC MSS I/O buffer supply voltage –0.3 to 3.75 V

VI I/O input voltage –0.3 V to 3.6 V

(when I/O hot insertion mode is enabled)

–0.3 V to (VCCxxxxIOBx + 1 V) or 3.6 V,

whichever voltage is lower (when I/O hot-

insertion mode is disabled)

VCC33A Analog clean 3.3 V supply to the analog

circuitry

–0.3 to 3.75 V

VCC33ADCx Analog 3.3 V supply to ADC –0.3 to 3.75 V

VCC33AP Analog clean 3.3 V supply to the charge pump –0.3 to 3.75 V

VCC33SDDx Analog 3.3 V supply to the sigma-delta DAC –0.3 to 3.75 V

VAREFx Voltage reference for ADC 1.0 to 3.75 V

VCCRCOSC Analog supply to the integrated RC oscillator –0.3 to 3.75 V

VDDBAT External battery supply –0.3 to 3.75 V

VCCMAINXTAL Analog supply to the main crystal oscillator –0.3 to 3.75 V

VCCLPXTAL Analog supply to the low power 32 kHz crystal

oscillator

–0.3 to 3.75 V

VCCENVM Embedded nonvolatile memory supply –0.3 to 1.65 V

VCCESRAM Embedded SRAM supply –0.3 to 1.65 V

VCC15A Analog 1.5 V supply to the analog circuitry –0.3 to 1.65 V

VCC15ADCx Analog 1.5 V supply to the ADC –0.3 to 1.65 V

TSTG1Storage temperature –65 to +150 °C

TJ1Junction temperature 125 °C

Notes:

1. For flash programming and retention maximum limits, refer to Table 2-4 on page 2-4. For recommended operating

conditions, refer to Table 2-3 on page 2-3.

2. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may

undershoot or overshoot according to the limits shown in Table 2-5 on pa ge 2-4.

SmartFusion DC and Switching Characteristics

2-2 Revision 7

Table 2-2 • Analog Maximum Ratings

Parameter Conditions Min. Max. Units

ABPS[n] pad voltage (relative to ground) GDEC[1:0] = 00 (±15.36 V range)

Absolute maximum –11.5 14.4 V

Recommended –11 14 V

GDEC[1:0] = 01 (±10.24 V range) –11.5 12 V

GDEC[1:0] = 10 (±5.12 V range) –6 6 V

GDEC[1:0] = 11 (±2.56 V range) –3 3 V

CM[n] pad voltage relative to ground) CMB_DI_ON = 0 (ADC isolated)

COMP_EN = 0 (comparator off, for the

associated even-numbered comparator)

Absolute maximum –0.3 14.4 V

Recommended –0.3 14 V

CMB_DI_ON = 0 (ADC isolated)

COMP_EN = 1 (comparator on)

–0.3 3 V

TMB_DI_ON = 1 (direct ADC in) –0.3 3 V

TM[n] pad voltage (relative to ground) TMB_DI_ON = 0 (ADC isolated)

COMP_EN = 1(comparator on)

–0.3 3 V

TMB_DI_ON = 1 (direct ADC in) –0.3 3 V

ADC[n] pad voltage (relative to ground) –0.3 3.6 V

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-3

Table 2-3 • Recommended Operating Cond iti on s

Symbol Parameter1Commercial Industrial Units

TJJunction temperature 0 to +85 –40 to +100 °C

VCC 21.5 V DC core supply voltage 1.425 to 1.575 1.425 to 1.575 V

VJTAG JTAG DC voltage 1.425 to 3.6 1.425 to 3.6 V

VPP Programming voltage Programming mode 3.15 to 3.45 3.15 to 3.45 V

Operation3 0 to 3.6 0 to 3.6 V

VCCPLLx Analog power supply (PLL) 1.425 to 1.575 1.425 to 1.575 V

VCCFPGAIOBx/

VCCMSSIOBx4

1.5 V DC supply voltage 1.425 to 1.575 1.425 to 1.575 V

1.8 V DC supply voltage 1.7 to 1.9 1.7 to 1.9 V

2.5 V DC supply voltage 2.3 to 2.7 2.3 to 2.7 V

3.3 V DC supply voltage 3.0 to 3.6 3.0 to 3.6 V

LVDS differential I/O 2.375 to 2.625 2.375 to 2.625 V

LVPECL differential I/O 3.0 to 3.6 3.0 to 3.6 V

VCC33A5Analog clean 3.3 V supply to the analog circuitry 3.15 to 3.45 3.15 to 3.45 V

VCC33ADCx5Analog 3.3 V supply to ADC 3.15 to 3.45 3.15 to 3.45 V

VCC33AP5Analog clean 3.3 V supply to the charge pump 3.15 to 3.45 3.15 to 3.45 V

VCC33SDDx5Analog 3.3 V supply to sigma-delta DAC 3.15 to 3.45 3.15 to 3.45 V

VAREFx Voltage reference for ADC 2.527 to 3.3 2.527 to 3.3 V

VCCRCOSC Analog supply to the integrated RC oscillator 3.15 to 3.45 3.15 to 3.45 V

VDDBAT External battery supply 2.7 to 3.63 2.7 to 3.63 V

VCCMAINXTAL5Analog supply to the main crystal oscillator 3.15 to 3.45 3.15 to 3.45 V

VCCLPXTAL5Analog supply to the low power 32 KHz crystal

oscillator

3.15 to 3.45 3.15 to 3.45 V

VCCENVM Embedded nonvolatile memory supply 1.425 to 1.575 1.425 to 1.575 V

VCCESRAM Embedded SRAM supply 1.425 to 1.575 1.425 to 1.575 V

VCC15A2Analog 1.5 V supply to the analog circuitry 1.425 to 1.575 1.425 to 1.575 V

VCC15ADCx2 Analog 1.5 V supply to the ADC 1.425 to 1.575 1.425 to 1.575 V

Notes:

1. All parameters representing voltages are measured with respect to GND unless otherwise specified.

2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,

VCC15A, and VCC15ADCx.

3. VPP can be left floating during operation (not programming mode).

4. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O

standard are given in Table 2-19 on page 2-23. VCCxxxxIOBx should be at the same voltage within a given I/O bank.

5. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,

VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.

SmartFusion DC and Switching Characteristics

2-4 Revision 7

Power Supply Sequencing Requirement

SmartFusion cSoCs have an on-chip 1.5 V regulator, but usage of an external 1.5 V supply is also

allowed while the on-chip regulator is disabled. In that case, the 3.3 V supplies (VCC33A, etc.) should be

powered before 1.5 V (VCC, etc.) supplies. The 1.5 V supplies should be enabled only after 3.3 V

supplies reach a value higher than 2.7 V.

I/O Power-Up and Supply Voltage Thresholds for Power-On Reset

(Commercial and Industrial)

Sophisticated power-up management circuitry is designed into every SmartFusion cSoC. These circuits

ensure easy transition from the powered-off state to the powered-up state of the device. In addition, the

I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1

on page 2-6.

There are five regions to consider during power-up.

SmartFusion I/Os are activated only if ALL of the following three conditions are met:

1. VCC and VCCxxxxIOBx are above the minimum specified trip points (Figure 2-1 on page 2-6).

2. VCCxxxxIOBx > VCC – 0.75 V (typical)

3. Chip is in the SoC Mode.

Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating Limits

Product Grade Storag e Tempera ture Element Grade Programming

Cycles Retention

Commercial Min. TJ = 0°C FPGA/FlashROM 500 20 years

Min. TJ = 85°C Embedded Flash < 1,000 20 years

< 10,000 10 years

< 15,000 5 years

Industrial Min. TJ = –40°C FPGA/FlashROM 500 20 years

Min. TJ = 100°C Embedded Flash < 1,000 20 years

< 10,000 10 years

< 15,000 5 years

Table 2-5 • Overshoot and Undershoot Limits1

VCCxxxxIOBx Average VCCxxxxIOBx–GND Overshoot or Undershoot

Duration as a Percentage of Clock Cycle2Maximum Overshoot/

Undershoot2

2.7 V or less 10% 1.4 V

5% 1.49 V

3 V 10% 1.1 V

5% 1.19 V

3.3 V 10% 0.79 V

5% 0.88 V

3.6 V 10% 0.45 V

5% 0.54 V

Notes:

1. Based on reliability requirements at 85°C.

2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the

maximum overshoot/undershoot has to be reduced by 0.15 V.

3. This table does not provide PCI overshoot/undershoot limits.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-5

VCCxxxxIOBx Trip Point:

Ramping up: 0.6 V < trip_point_up < 1.2 V

Ramping down: 0.5 V < trip_point_down < 1.1 V

VCC Trip Point:

Ramping up: 0.6 V < trip_point_up < 1.1 V

Ramping down: 0.5 V < trip_point_down < 1 V

VCC and VCCxxxxIOBx ramp-up trip points are about 100 mV higher than ramp-down trip points. This

specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the

following:

• During programming, I/Os become tristated and weakly pulled up to VCCxxxxIOBx.

• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O

behavior.

PLL Behavior at Brownout Condition

The Microsemi SoC Products Group recommends using monotonic power supplies or voltage regulators

to ensure proper power-up behavior. Power ramp-up should be monotonic at least until VCC and

VCCPLLx exceed brownout activation levels. The VCC activation level is specified as 1.1 V worst-case

(see Figure 2-1 on page 2-6 for more details).

When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25

V), the PLL output lock signal goes low and/or the output clock is lost. Refer to the "Power-Up/-Down

Behavior of Low Power Flash Devices" chapter of the ProASIC3 FPGA Fabric User’s Guide for

information on clock and lock recovery.

Internal Power-Up Activation Sequence

1. Core

2. Input buffers

Output buffers, after 200 ns delay from input buffer activation

SmartFusion DC and Switching Characteristics

2-6 Revision 7

Figure 2-1 • I/O State as a Function of VCCxxxxIOBx and VCC Voltage Levels

VCCxxxxIOBx

Region 1: I/O buffers are OFF

Region 2: I/O buffers are ON.

I/Os are functional (except differential inputs)

but slower because VCCxxxxIOBx

/ V

are

below specification. For the same reason, input

buffers do not meet VIH / VIL levels, and

output buffers do not meet VOH / VOL levels.

Min VCCxxxxIOBx datasheet specification

voltage at a selected I/O

standard; i.e., 1.425 V or 1.7 V

or 2.3 V or 3.0 V

VCC

VCC = 1.425 V

Region 1: I/O Buffers are OFF

Activation trip point:

= 0.85 V ± 0.25 V

Deactivation trip point:

= 0.75 V ± 0.25 V

Activation trip point:

= 0.9 V ± 0.3 V

Deactivation trip point:

= 0.8 V ± 0.3 V

VCC = 1.575 V

Region 5: I/O buffers are ON

and power supplies are within

specification.

I/Os meet the entire datasheet

and timer specifications for

speed, VIH / VIL , VOH / VOL , etc.

Region 4: I/O

buffers are ON.

I/Os are functional

(except differential

but slower because

below specification. For the

same reason, input buffers do not

meet VIH / VIL levels, and output

buffers do not meet VOH / VOL levels.

where VT can be from 0.58 V to 0.9 V (typically 0.75 V)

VCCxxxxIOBx

Region 3: I/O buffers are ON.

I/Os are functional; I/O DC

specifications are met,

but I/Os are slower because

the VCC is below specification.

VCC = VCCxxxxIOBx + VT

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-7

Thermal Characteristics

Introduction

The temperature variable in the SoC Products Group Designer software refers to the junction

temperature, not the ambient, case, or board temperatures. This is an important distinction because

dynamic and static power consumption will cause the chip's junction temperature to be higher than the

ambient, case, or board temperatures. EQ 1 through EQ 3 give the relationship between thermal

resistance, temperature gradient, and power.

EQ 1

EQ 2

EQ 3

where

θJA = Junction-to-air thermal resistance

θJB = Junction-to-board thermal resistance

θJC = Junction-to-case thermal resistance

TJ= Junction temperature

TA= Ambient temperature

TB= Board temperature (measured 1.0 mm away from the

package edge)

TC= Case temperature

P = Total power dissipated by the device

Table 2-6 • Package Thermal Resistance

Product

Die Size θJA

θJC θJB Units(mm) Still Air 1.0 m/s 2.5 m/s

A2F200M3F-FG256 X = 4.0; Y = 5.6 33.7 30.0 28.3 9.3 24.8 °C/W

A2F200M3F-FG484 X = 5.10; Y = 7.3 21.8 18.2 16.7 7.7 16.8 °C/W

θJA

TJθA

–

------------------

θJB

TJTB

–

-------------------

θJC

TJTC

–

-------------------

SmartFusion DC and Switching Characteristics

2-8 Revision 7

Theta-JA

Junction-to-ambient thermal resistance (θJA) is determined under standard conditions specified by

JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with

caution but is useful for comparing the thermal performance of one package to another.

A sample calculation showing the maximum power dissipation allowed for the A2F200-FG484 package

under forced convection of 1.0 m/s and 75°C ambient temperature is as follows:

EQ 4

where

EQ 5

The power consumption of a device can be calculated using the Microsemi SoC Products Group power

calculator. The device's power consumption must be lower than the calculated maximum power

dissipation by the package. If the power consumption is higher than the device's maximum allowable

power dissipation, a heat sink can be attached on top of the case, or the airflow inside the system must

be increased.

Theta-JB

Junction-to-board thermal resistance (θJB) measures the ability of the package to dissipate heat from the

surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance

from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a

means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a

JEDEC standard board with a minimum distance of 5.0 mm away from the package edge.

Theta-JC

Junction-to-case thermal resistance (θJC) measures the ability of a device to dissipate heat from the

surface of the chip to the top or bottom surface of the package. It is applicable for packages used with

external heat sinks. Constant temperature is applied to the surface in consideration and acts as a

boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through

the surface in consideration.

Calculation for Heat Sink

For example, in a design implemented in an A2F200-FG484 package with 2.5 m/s airflow, the power

consumption value using the power calculator is 3.00 W. The user-dependent Ta and Tj are given as

follows:

From the datasheet:

θJA = 19.00°C/W (taken from Table 2-6 on page 2-7).

TA= 75.00°C

TJ= 100.00°C

TA= 70.00°C

θJA = 17.00°C/W

θJC = 8.28°C/W

Maximum Power Allowed TJ(MAX) TA(MAX)

–

θJA

---------------------------------------------

Maximum Power Allowed 100.00°C 75.00°C–

19.00°C/W

---------------------------------------------------- 1.3 W==

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-9

EQ 6

The 1.76 W power is less than the required 3.00 W. The design therefore requires a heat sink, or the

airflow where the device is mounted should be increased. The design's total junction-to-air thermal

resistance requirement can be estimated by EQ 7:

EQ 7

Determining the heat sink's thermal performance proceeds as follows:

EQ 8

where

EQ 9

A heat sink with a thermal resistance of 5.01°C/W or better should be used. Thermal resistance of heat

sinks is a function of airflow. The heat sink performance can be significantly improved with increased

airflow.

Carefully estimating thermal resistance is important in the long-term reliability of an FPGA. Design

engineers should always correlate the power consumption of the device with the maximum allowable

power dissipation of the package selected for that device.

Note: The junction-to-air and junction-to-board thermal resistances are based on JEDEC standard

(JESD-51) and assumptions made in building the model. It may not be realized in actual

application and therefore should be used with a degree of caution. Junction-to-case thermal

resistance assumes that all power is dissipated through the case.

Temperature and Voltage Derating Factors

θJA = 0.37°C/W

= Thermal resistance of the interface material between

the case and the heat sink, usually provided by the

thermal interface manufacturer

θSA = Thermal resistance of the heat sink in °C/W

Table 2-7 • Temperature and Voltage Derating Fa ctors for Timing Delays

(normalized to TJ = 85°C, worst-case VCC = 1.425 V)

Array

Voltage VCC

(V)

Junction Temperature (°C)

–40°C 0°C 25°C 70°C 85°C 100°C

1.425 0.86 0.91 0.93 0.98 1.00 1.02

1.500 0.81 0.86 0.88 0.93 0.95 0.96

1.575 0.78 0.83 0.85 0.90 0.91 0.93

PTJTA

–

θJA

-------------------100°C 70°C–

17.00 W

------------------------------------1.76 W== =

θJA(total)

TJTA

–

-------------------100°C 70°C–

3.00 W

------------------------------------10.00°C/W== =

θJA(TOTAL) θJC θCS θSA

++=

θSA θJA(TOTAL) θJC

–θCS

–=

θSA 13.33°C/W 8.28°C/W–0.37°C/W–5.01°C/W==

SmartFusion DC and Switching Characteristics

2-10 Revision 7

Calculating Power Dissipation

Quiescent Supply Current

Power per I/O Pin

Table 2-8 • Power Supplies Configuration

Modes and Power

Supplies

VCCxxxxIOBx

VCCFPGAIOBx

VCCMSSIOBx

VCC33A / VCC33ADCx

VCC33AP / VCC33SDDx

VCCMAINXTAL / VCCLPXTAL

VCC / VCC15A / VCC15ADCx

VCCPLLx, VCCENVM,

VCCESRAM

VDDBAT

VCCRCOSC

VJTAG

VPP

eNVM (reset/off)

LPXTAL (enable/disable)

MAINXTAL (enable/ di sa ble)

Time Keeping mode 0 V 0 V 0 V 3.3 V 0 V 0 V 0 V Off Enable Disable

Standby mode On* 3.3 V 1.5 V N/A 3.3 V N/A N/A Reset Enable Disable

SoC mode On* 3.3 V 1.5 V N/A 3.3 V N/A N/A On Enable Enable

Note: *On means proper voltage is applie d. Refer to Table 2-3 on page 2-3 for recommended operating conditio ns.

Table 2-9 • Quiescent Supply Current Characteristics

Parameter Modes

A2F060 A2F200 A2F500

1.5 V

Domain 3.3 V

Domain 1.5 V

Domain 3.3 V

Domain 1.5 V

Domain 3.3 V

Domain

IDC1 SoC mode 3 mA 2 mA 7 mA 4 mA 16.5 mA 4 mA

IDC2 Standby mode 3 mA 2 mA 7 mA 4 mA 16.5 mA 4 mA

IDC3 Time Keeping mode N/A 10 µA N/A 10 µA N/A 10 µA

Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

VCCFPGAIOBx (V) Static Power

PDC7 (mW) Dynamic Power PAC9

(µW/MHz)

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 17.55

2.5 V LVCMOS 2.5 – 5.97

1.8 V LVCMOS 1.8 – 2.88

1.5 V LVCMOS (JESD8-11) 1.5 – 2.33

3.3 V PCI 3.3 – 19.21

3.3 V PCI-X 3.3 – 19.21

Differential

LVDS 2.5 2.26 0.82

LVPECL 3.3 5.72 1.16

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-11

Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings

Applicable to MSS I/O Banks

VCCMSSIOBx (V) Static Power

PDC7 (mW) Dynamic Power

PAC9 (µW/MHz)

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 17.21

3.3 V LVCMOS / 3.3 V LVCMOS – Schmitt trigger 3.3 – 20.00

2.5 V LVCMOS 2.5 – 5.55

2.5 V LVCMOS – Schmitt trigger 2.5 – 7.03

1.8 V LVCMOS 1.8 – 2.61

1.8 V LVCMOS – Schmitt trigger 1.8 – 2.72

1.5 V LVCMOS (JESD8-11) 1.5 – 1.98

1.5 V LVCMOS (JESD8-11) – Schmitt trigger 1.5 – 1.93

Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings*

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

CLOAD (pF) VCCFPGAIOBx

(V) Static Power

PDC8 (mW) Dynamic Power

PAC10 (µW/MHz)

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 35 3.3 – 475.66

2.5 V LVCMOS 35 2.5 – 270.50

1.8 V LVCMOS 35 1.8 – 152.17

1.5 V LVCMOS (JESD8-11) 35 1.5 – 104.44

3.3 V PCI 10 3.3 – 202.69

3.3 V PCI-X 10 3.3 – 202.69

Differential

LVDS – 2.5 7.74 88.26

LVPECL – 3.3 19.54 164.99

Note: *Dynamic power consumpti on is given for standard load an d software default drive strength and outpu t slew.

Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings

Applicable to MSS I/O Banks

CLOAD (pF) VCCMSSIOBx (V) Static Power

PDC8 (mW)2Dynamic Power

PAC10 (µW/MHz)3

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 10 3.3 – 155.65

2.5 V LVCMOS 10 2.5 – 88.23

1.8 V LVCMOS 10 1.8 – 45.03

1.5 V LVCMOS (JESD8-11) 10 1.5 – 31.01

SmartFusion DC and Switching Characteristics

2-12 Revision 7

Power Consumption of Various Internal Resources

Table 2-14 • Differe nt Components Contributing to Dynamic Power Consumption in Smar tFusion cSoCs

Parameter Definition

Power Supply Device

UnitsName Domain A2F060 A2F200 A2F500

PAC1 Clock contribution of a Global Rib VCC 1.5 V 3.39 3.40 5.05 µW/MHz

PAC2 Clock contribution of a Global Spine VCC 1.5 V 1.14 1.83 2.50 µW/MHz

PAC3 Clock contribution of a VersaTile

row

VCC 1.5 V 1.15 1.15 1.15 µW/MHz

PAC4 Clock contribution of a VersaTile

used as a sequential module

VCC 1.5 V 0.12 0.12 0.12 µW/MHz

PAC5 First contribution of a VersaTile

used as a sequential module

VCC 1.5 V 0.07 0.07 0.07 µW/MHz

PAC6 Second contribution of a VersaTile

used as a sequential module

VCC 1.5 V 0.29 0.29 0.29 µW/MHz

PAC7 Contribution of a VersaTile used as

a combinatorial module

VCC 1.5 V 0.29 0.29 0.29 µW/MHz

PAC8 Average contribution of a routing net VCC 1.5 V 1.04 0.79 0.79 µW/MHz

PAC9 Contribution of an I/O input pin

(standard dependent)

VCCxxxxIOBx/VCC See Ta b l e 2 - 1 0 and Table 2-11 on page 2-11

PAC10 Contribution of an I/O output pin

(standard dependent)

VCCxxxxIOBx/VCC See Ta ble 2 -12 and Table 2-13 on page 2-11

PAC11 Average contribution of a RAM

block during a read operation

VCC 1.5 V 25.00 µW/MHz

PAC12 Average contribution of a RAM

block during a write operation

VCC 1.5 V 30.00 µW/MHz

PAC13 Dynamic Contribution for PLL VCC 1.5 V 2.60 µW/MHz

PAC15 Contribution of NVM block during a

read operation (F < 33MHz)

VCC 1.5 V 358.00 µW/MHz

PAC16 1st contribution of NVM block during

a read operation (F > 33MHz)

VCC 1.5 V 12.88 mW

PAC17 2nd contribution of NVM block

during a read operation (F > 33MHz)

VCC 1.5 V 4.80 µW/MHz

PAC18 Main Crystal Oscillator contribution VCCMAINXTAL 3.3 V 1.98 mW

PAC19a RC Oscillator contribution VCCRCOSC 3.3 V 3.30 mW

PAC19b RC Oscillator contribution VCC 1.5 V 3.00 mW

PAC20a Analog Block Dynamic Power

Contribution of the ADC

VCC33ADCx 3.3 V 8.25 mW

PAC20b Analog Block Dynamic Power

Contribution of the ADC

VCC15ADCx 1.5 V 3.00 mW

PAC21 Low Power Crystal Oscillator

contribution

VCCLPXTAL 3.3 V 33.00 µW

PAC22 MSS Dynamic Power Contribution –

Running Drysthone at 100MHz1

VCC 1.5 V 67.50 mW

PAC23 Temperature Monitor Power

Contribution

See Table 2-94 on

page 2-77

–1.23mW

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-13

PAC24 Current Monitor Power Contribution See Table 2-93 on

page 2-76

–1.03mW

PAC25 ABPS Power Contribution See Table 2-97 on

page 2-81

–0.70mW

PAC26 Sigma-Delta DAC Power

Contribution2

See Table 2-99 on

page 2-84

–0.58mW

PAC27 Comparator Power Contribution See Table 2-98 on

page 2-83

–1.02mW

PAC28 Voltage Regulator Power

Contribution3

See Table 2-100 on

page 2-86

–36.30mW

Notes:

1. For a different use of MSS peripherals and resources, refer to SmartPower.

2. Assumes Input = Half Scale Operation mode.

3. Assumes 100 mA load on 1.5 V domain.

Table 2-15 • Differe nt Components Contribu ting to the Static Power Consumption in SmartFusion cSoC s

Parameter Definition

Power Supply Device

UnitsName Domain A2F060 A2F200 A2F200

PDC1 Core static power contribution in

SoC mode

VCC 1.5 V 11.10 23.70 37.95 mW

PDC2 Device static power contribution in

Standby Mode

See Ta b le 2- 8 on

page 2-10

– 11.10 23.70 37.95 mW

PDC3 Device static power contribution in

Time Keeping mode

See Ta b le 2- 8 on

page 2-10

3.3 V 33.00 33.00 33.00 µW

PDC7 Static contribution per input pin

(standard dependent contribution)

VCCxxxxIOBx/VCC See Tabl e 2-1 0 and Table 2-11 on page 2-11.

PDC8 Static contribution per output pin

(standard dependent contribution)

VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11.

PDC9 Static contribution per PLL VCC 1.5 V 2.55 2.55 2.55 mW

Table 2-16 • eNVM Dyn amic Power Consumption

Parameter Description Condition Min. Typ. Max. Units

eNVM System eNVM array operating power Idle 795 µA

Read operation See Table 2-14 on page 2-12.

Erase 900 µA

Write 900 µA

PNVMCTRL eNVM controller operating power 20 µW/MHz

Table 2-14 • Differe nt Components Contributing to Dynamic Power Consumption in Smar tFusion cSoCs

Parameter Definition

Power Supply Device

UnitsName Domain A2F060 A2F200 A2F500

SmartFusion DC and Switching Characteristics

2-14 Revision 7

Power Calculation Methodology

This section describes a simplified method to estimate power consumption of an application. For more

accurate and detailed power estimations, use the SmartPower tool in the Libero IDE software.

The power calculation methodology described below uses the following variables:

• The number of PLLs/CCCs as well as the number and the frequency of each output clock

generated

• The number of combinatorial and sequential cells used in the design

• The internal clock frequencies

• The number and the standard of I/O pins used in the design

• The number of RAM blocks used in the design

• The number of eNVM blocks used in the design

• The analog block used in the design, including the temperature monitor, current monitor, ABPS,

sigma-delta DAC, comparator, low power crystal oscillator, RC oscillator and the main crystal

oscillator

• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-17 on

page 2-18.

• Enable rates of output buffers—guidelines are provided for typical applications in Table 2-18 on

page 2-18.

• Read rate and write rate to the memory—guidelines are provided for typical applications in

Table 2-18 on page 2-18.

• Read rate to the eNVM blocks

The calculation should be repeated for each clock domain defined in the design.

Methodology

Total Power Consumption—PTOTAL

SoC Mode, Standby Mode, and Time Keeping Mode.

PTOTAL = PSTAT + PDYN

PSTAT is the total static power consumption.

PDYN is the total dynamic power consumption.

Total Static Power Consumption—PSTAT

SoC Mode

PSTAT = PDC1 + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) + (NPLLS * PDC9)

NINPUTS is the number of I/O input buffers used in the design.

NOUTPUTS is the number of I/O output buffers used in the design.

NPLLS is the number of PLLs available in the device.

Standby Mode

PSTAT = PDC2

Time Keeping Mode

PSTAT = PDC3

Total Dynamic Power Consumption—PDYN

SoC Mode

PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PeNVM +

PXTL-OSC + PRC-OSC + PAB + PLPXTAL-OSC + PMSS

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-15

Standby Mode

PDYN = PRC-OSC + PLPXTAL-OSC

Time Keeping Mode

PDYN = PLPXTAL-OSC

Global Clock Dynamic Contribution—PCLOCK

SoC Mode

PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK

NSPINE is the number of global spines used in the user design—guidelines are provided in

Table 2-17 on page 2-18.

NROW is the number of VersaTile rows used in the design—guidelines are provided in Table 2-17

on page 2-18.

FCLK is the global clock signal frequency.

NS-CELL is the number of VersaTiles used as sequential modules in the design.

Standby Mode and Time Keeping Mode

PCLOCK = 0 W

Sequential Cells Dynamic Contribution—PS-CELL

SoC Mode

PS-CELL = NS-CELL * (PAC5 + (α1 / 2) * PAC6) * FCLK

NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile

sequential cell is used, it should be accounted for as 1.

α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.

FCLK is the global clock signal frequency.

Standby Mode and Time Keeping Mode

PS-CELL = 0 W

Combinatorial Cells Dynamic Contribution—PC-CELL

SoC Mode

PC-CELL = NC-CELL* (α1 / 2) * PAC7 * FCLK

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.

FCLK is the global clock signal frequency.

Standby Mode and Time Keeping Mode

PC-CELL = 0 W

Routing Net Dynamic Contribution—PNET

SoC Mode

PNET = (NS-CELL + NC-CELL) * (α1 / 2) * PAC8 * FCLK

NS-CELL is the number VersaTiles used as sequential modules in the design.

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18.

FCLK is the frequency of the clock driving the logic including these nets.

SmartFusion DC and Switching Characteristics

2-16 Revision 7

Standby Mode and Time Keeping Mode

PNET = 0 W

I/O Input Buffer Dynamic Contribution—PINPUTS

SoC Mode

PINPUTS = NINPUTS * (α2 / 2) * PAC9 * FCLK

Where:

NINPUTS is the number of I/O input buffers used in the design.

α2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18.

FCLK is the global clock signal frequency.

Standby Mode and Time Keeping Mode

PINPUTS = 0 W

I/O Output Buffer Dynamic Contribution—POUTPUTS

SoC Mode

POUTPUTS = NOUTPUTS * (α2 / 2) * β1 * PAC10 * FCLK

Where:

NOUTPUTS is the number of I/O output buffers used in the design.

α2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18.

β1 is the I/O buffer enable rate—guidelines are provided in Table 2-18 on page 2-18.

FCLK is the global clock signal frequency.

Standby Mode and Time Keeping Mode

POUTPUTS = 0 W

FPGA Fabric SRAM Dynamic Contribution—PMEMORY

SoC Mode

PMEMORY = (NBLOCKS * PAC11 * β2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * β3 * FWRITE-CLOCK)

Where:

NBLOCKS is the number of RAM blocks used in the design.

FREAD-CLOCK is the memory read clock frequency.

β2 is the RAM enable rate for read operations—guidelines are provided in Table 2-18 on

page 2-18.

β3 the RAM enable rate for write operations—guidelines are provided in Table 2-18 on page 2-18.

FWRITE-CLOCK is the memory write clock frequency.

Standby Mode and Time Keeping Mode

PMEMORY = 0 W

PLL/CCC Dynamic Contribution—PPLL

SoC Mode

PPLL = PAC13 * FCLKOUT

FCLKIN is the input clock frequency.

FCLKOUT is the output clock frequency.1

Standby Mode and Time Keeping Mode

1.The PLL dynamic contribution depends on the input clock fr equency, the number of output clock sign als generated by the

PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output

clock in the formula output clock by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL

contribution.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-17

PPLL = 0 W

Embedded Nonvolatile Memory Dynamic Contribution—PeNVM

SoC Mode

The eNVM dynamic power consumption is a piecewise linear function of frequency.

PeNVM = NeNVM-BLOCKS * β4 * PAC15 * FREAD-eNVM when FREAD-eNVM ≤ 33 MHz,

PeNVM = NeNVM-BLOCKS * β4 *(PAC16 + PAC17 * FREAD-eNVM) when FREAD-eNVM > 33 MHz

Where:

NeNVM-BLOCKS is the number of eNVM blocks used in the design.

β4 is the eNVM enable rate for read operations. Default is 0 (eNVM mainly in idle state).

FREAD-eNVM is the eNVM read clock frequency.

Standby Mode and Time Keeping Mode

PeNVM = 0 W

Main Crystal Oscillator Dynamic Contribution—PXTL-OSC

SoC Mode

PXTL-OSC = PAC18

Standby Mode

PXTL-OSC = 0 W

Time Keeping Mode

PXTL-OSC = 0 W

Low Power Oscillator Crystal Dynamic Contribution—PLPXTAL-OSC

Operating, Standby, and Time Keeping Mode

PLPXTAL-OSC = PAC21

RC Oscillator Dynamic Contribution—PRC-OSC

SoC Mode

PRC-OSC = PAC19A + PAC19B

Standby Mode and Time Keeping Mode

PRC-OSC = 0 W

Analog System Dynamic Contribution—PAB

SoC Mode

PAB = PAC23 * NTM + PAC24 * NCM + PAC25 * NABPS + PAC26 * NSDD + PAC27 * NCOMP + PADC * NADC

+ PVR

Where:

NCM is the number of current monitor blocks

NTM is the number of temperature monitor blocks

NSDD is the number of sigma-delta DAC blocks

NABPS is the number of ABPS blocks

NADC is the number of ADC blocks

NCOMP is the number of comparator blocks

PVR= PAC28

PADC= PAC20A + PAC20B

SmartFusion DC and Switching Characteristics

2-18 Revision 7

Microcontroller Subsystem Dynamic Contribution—PMSS

SoC Mode

PMSS = PAC22

Guidelines

Toggle Rate Definition

A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the

toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some

examples:

• The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock

frequency.

• The average toggle rate of an 8-bit counter is 25%:

– Bit 0 (LSB) = 100%

– Bit 1 = 50%

– Bit 2 = 25%

–…

– Bit 7 (MSB) = 0.78125%

– Average toggle rate = (100% + 50% + 25% + 12.5% + . . . 0.78125%) / 8.

Enable Rate Definition

Output enable rate is the average percentage of time during which tristate outputs are enabled. When

non-tristate output buffers are used, the enable rate should be 100%.

Table 2-17 • Toggle Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

α1 Toggle rate of VersaTile outputs 10%

α2 I/O buffer toggle rate 10%

Table 2-18 • Enable Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

β1 I/O output buffer enable rate Toggle rate of the logic driving the

output buffer

β2 FPGA fabric SRAM enable rate for read

operations

12.5%

β3FPGA fabric SRAM enable rate for write

operations

12.5%

β4 eNVM enable rate for read operations < 5%

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-19

User I/O Characteristics

Timing Model

Figure 2-2 • Timing Model

Operating Conditions: –1 Speed, Commercial Temperature Range (TJ = 85°C),

Worst Case VCC = 1.425 V

DQ DQ

Combinational Cell

I/O Module

(Registered)

I/O Module

(Non-Registered)

I/O Module

(Registered)

I/O Module

(Non-Registered)

LVPECL (applicable to

FPGA /O bank, EMC pin)

LVPECL

(Applicable

to FPGA

I/O Bank,

EMC pin)

LVDS,

BLVDS,

M-LVDS

(Applicable for

FPGA I/O Bank,

EMC pin)

LVTTL 3.3 V Output drive

strength = 12 mA High slew rate

Combinational Cell

I/O Module

(Non-Registered)

LVTTLOutput drive strength = 8 mA

High slew rate

I/O Module

(Non-Registered)

LVCMOS 1.5 V Output drive strength = 4 mA

High slew rate

LVTTLOutput drive strength = 12 mA

High slew rate

I/O Module

(Non-Registered)

Input LVTTL

Clock

Input LVTTL

Clock

Input LVTTL

Clock

= 0.57 ns t

= 0.49 ns

= 1.53 ns

= 0.89 ns t

= 2.81 ns (FPGA I/O Bank, EMC pin)

= 0.51 ns

= 3.87 ns (FPGA I/O Bank, EMC pin)

= 0.48 ns t

= 4.13 ns (FPGA I/O Bank, EMC pin)

= 0.48 ns

= 0.81 ns

(FPGA I/O Bank, EMC pin)

CLKQ

= 0.56 ns t

OCLKQ

= 0.60 ns

SUD

= 0.44 ns t

OSUD

= 0.32 ns

= 2.81 ns

(FPGA I/O Bank, EMC pin)

= 0.81 ns (FPGA I/O Bank, EMC pin)

= 1.55 ns

CLKQ

= 0.56 ns

SUD

= 0.44 ns

= 0.81 ns

(FPGA I/O Bank, EMC pin)

ICLKQ

= 0.24 ns

ISUD

= 0.27 ns

= 1.46 ns

SmartFusion DC and Switching Characteristics

2-20 Revision 7

Figure 2-3 • Input Buffer Timing Model and Delays (example )

(R)

PAD

trip

GND t

(F)

trip

50%

VIH

VCC

VIL

DOUT

(R)

DIN

GND t

DOUT

(F)

50%50%

VCC

PAD Y

CLK

I/O Interface

DIN

To Array

= MAX(t

(R), t

(F))

DIN

= MAX(t

DIN

(R), t

DIN

(F))

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-21

Figure 2-4 • Output Buffer Model and Delays (example)

tDP

(R)

PAD VOL

tDP

(F)

Vtrip

VOH

VCC

D50% 50%

VCC

0 V

DOUT 50% 50% 0 V

tDOUT

(R)

tDOUT

(F)

From Array

PAD

tDP

Std

Load

CLK

I/O Interface

DOUT

tDOUT

tDP = MAX(tDP(R), tDP(F))

tDOUT = MAX(tDOUT(R), tDOUT(F))

SmartFusion DC and Switching Characteristics

2-22 Revision 7

Figure 2-5 • Tristate Output Buffer Timing Model and Delays (example)

CLK

10% VCCxxxxIOBx

tZL

Vtrip

50%

tHZ

90% VCCxxxxIOBx

tZH

Vtrip

50% 50% tLZ

50%

EOUT

PAD

E50%

tEOUT (R)

50%tEOUT (F)

PAD

DOUT

EOUT

I/O Interface

tEOUT

tZLS

Vtrip

50%

tZHS

Vtrip

50%

EOUT

PAD

E50% 50%

tEOUT (R) tEOUT (F)

50%

VCC

VCCxxxxIOBx

VCC

VOH

VOL

tZL, tZH, tHZ, tLZ, tZLS, tZHS

tEOUT = MAX(tEOUT(r), tEOUT(f))

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-23

Overview of I/O Performance

Summary of I/O DC Input and Output Levels – Default I/O Software

Settings

Table 2-19 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial

Conditions—Software De fault Settings

Applicable to FPGA I/O Banks

I/O Standard Drive

Strgth. Slew

Rate

VIL VIH VOL VOH IOL1IOH1

Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

3.3VLVTTL/

3.3 V LVCMOS

12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12

2.5 V LVCMOS 12 mA High –0.3 0.7 1.7 3.6 0.7 1.7 12 12

1.8 V LVCMOS 12 mA High –0.3 0.35 *

VCCxxxxIOBx

0.65*

VCCxxxxIOBx

3.6 0.45 VCCxxxxIOBx

– 0.45

12 12

1.5 V LVCMOS 12 mA High –0.3 0.35 *

VCCxxxxIOBx

0.65*

VCCxxxxIOBx

3.6 0.25 *

VCCxxxxIOBx

0.75*

VCCxxxxIOBx

12 12

3.3 V PCI Per PCI specifications

3.3 V PCI-X Per PCI-X specifications

Notes:

1. Currents are measured at 85°C juncti on temperature.

2. Output slew rate can be extracted by the IBIS Models.

Table 2-20 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial

Conditions—Software De fault Settings

Applicable to MSS I/O Banks

I/O Standard Drive

Strgth. Slew

Rate

VIL VIH VOL VOH IOL1IOH1

Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

3.3VLVTTL/

3.3 V LVCMOS

8 mA High –0.3 0.8 2 3.6 0.4 2.4 8 8

2.5 V LVCMOS 8 mA High –0.3 0.7 1.7 3.6 0.7 1.7 8 8

1.8 V LVCMOS 4 mA High –0.3 0.35*

VCCxxxxIOBx

0.65*

VCCxxxxIOBx

3.6 0.45 VCCxxxxIOBx

– 0.45

1.5 V LVCMOS 2 mA High –0.3 0.35*

VCCxxxxIOBx

0.65*

VCCxxxxIOBx

3.6 0.25*

VCCxxxxIOBx

0.75*

VCCxxxxIOBx

Notes:

1. Currents are measured at 85°C juncti on temperature.

2. Output slew rate can be extracted by the IBIS Models.

SmartFusion DC and Switching Characteristics

2-24 Revision 7

Summary of I/O Timing Characteristics – Default I/O Software

Settings

Table 2-21 • Summary of Maximum and Minimum DC Input Levels

Applicable to Commercial Conditions in all I/O Bank Types

DC I/O Standards

Commercial

IIL IIH

µA µA

3.3 V LVTTL / 3.3 V LVCMOS 15 15

2.5 V LVCMOS 15 15

1.8 V LVCMOS 15 15

1.5 V LVCMOS 15 15

3.3 V PCI 15 15

3.3 V PCI-X 15 15

Table 2-22 • Summary of AC Measuring Points Applicable to All I/O Bank Types

Standard Measuring T rip Point (Vtrip)

3.3 V LVTTL / 3.3 V LVCMOS 1.4 V

2.5 V LVCMOS 1.2 V

1.8 V LVCMOS 0.90 V

1.5 V LVCMOS 0.75 V

3.3 V PCI 0.285 * VCCxxxxIOBx (RR)

0.615 * VCCxxxxIOBx (FF)

3.3 V PCI-X 0.285 * VCCxxxxIOBx (RR)

0.615 * VCCxxxxIOBx (FF)

LVDS Cross point

LVPECL Cross point

Table 2-23 • I/O AC Parameter Definitions

Parameter Parameter Definition

tDP Data to pad delay through the output buffer

tPY Pad to data delay through the input buffer

tDOUT Data to output buffer delay through the I/O interface

tEOUT Enable to output buffer tristate control delay through the I/O interface

tDIN Input buffer to data delay through the I/O interface

tHZ Enable to pad delay through the output buffer—High to Z

tZH Enable to pad delay through the output buffer—Z to High

tLZ Enable to pad delay through the output buffer—Low to Z

tZL Enable to pad delay through the output buffer—Z to Low

tZHS Enable to pad delay through the output buffer with delayed enable—Z to High

tZLS Enable to pad delay through the output buffer with delayed enable—Z to Low

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-25

Table 2-24 • Summary of I/O Timing Characteristics—Software Default Settings

–1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Wo rst Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx (per standard)

Applicable to FPGA I/O Banks, Assigned to EMC I/O Pins

I/O Standard

Drive Strength

Slew Rate

Capacitive Load (pF)

External Resistor (Ω)

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

tZLS (ns)

tZHS (ns)

Units

3.3VLVTTL/

3.3 V LVCMOS

12 mA High 35 – 0.50 2.81 0.03 0.81 0.32 2.86 2.23 2.55 2.82 4.58 3.94 ns

2.5 V LVCMOS 12 mA High 35 – 0.50 2.73 0.03 1.03 0.32 2.88 2.69 2.62 2.70 4.60 4.41 ns

1.8 V LVCMOS 12 mA High 35 – 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns

1.5 V LVCMOS 12 mA High 35 – 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns

3.3 V PCI Per PCI spec High 10 2510.50 2.11 0.03 0.68 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns

3.3 V PCI-X Per PCI-X

spec

High 10 2510.50 2.11 0.03 0.64 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns

LVDS 24 mA High – – 0.50 1.53 0.03 1.55 – – – – – – – ns

LVPECL 24 mA High – – 0.50 1.46 0.03 1.46 – – – – – – – ns

Notes:

1. Resistance is used to measure I/O propagatio n delays as defi ned in PCI specifi cations. See Figure 2-10 on page 2-39 for

connectivity. This resistor is not required during normal operation.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings

–1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Wo rst Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx (per standard)

Applicable to MSS I/O Banks

I/O Standard

Drive Strength

Slew Rate

Cap acitive Load (pF)

External Resistor

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tPYS (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

Units

3.3 V LVTTL /

3.3 V LVCMOS

8 mA High 10 – 0.18 1.92 0.07 0.78 1.09 0.18 1.96 1.55 1.83 2.04 ns

2.5 V LVCMOS 8 mA High 10 – 0.18 1.96 0.07 0.99 1.16 0.18 2.00 1.82 1.82 1.93 ns

1.8 V LVCMOS 4 mA High 10 – 0.18 2.31 0.07 0.91 1.37 0.18 2.35 2.27 1.84 1.87 ns

1.5 V LVCMOS 2 mA High 10 – 0.18 2.70 0.07 1.07 1.55 0.18 2.75 2.67 1.87 1.85 ns

Notes:

1. Resistance is used to measure I/O propagatio n delays as defi ned in PCI specifi cations. See Figure 2-10 on page 2-39 for

connectivity. This resistor is not required during normal operation.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-26 Revision 7

Detailed I/O DC Characteristics

Table 2-26 • Input Capacitance

Symbol Definition Conditions Min. Max. Units

CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF

CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF

Table 2-27 • I/O Output Buffer Maximu m Resistances1

Applicable to FPGA I/O Banks

Standard Drive Strength RPULL-DOWN

(Ω)2RPULL-UP

(Ω)3

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

12 mA 25 75

16 mA 17 50

24 mA 11 33

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

12 mA 25 50

16 mA 20 40

24 mA 11 22

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

6 mA 50 56

8 mA 50 56

12 mA 20 22

16 mA 20 22

1.5 V LVCMOS 2 mA 200 224

4 mA 100 112

6 mA 67 75

8 mA 33 37

12 mA 33 37

3.3 V PCI/PCI-X Per PCI/PCI-X specification 25 75

Notes:

1. These maximum values are provided for information only. Minimum output buffer resistance values

depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design

considerations and detailed output buffer resistances, use the corresponding IBIS models located on the

Microsemi SoC Products Group website at http://www.actel.com/download/ibis/default.aspx (also

generated by the SoC Product s Group Libero IDE toolset).

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-27

Table 2-28 • I/O Output Buffer Maximu m Resistances1

Applicable to MSS I/O Banks

Standard Drive Strength RPULL-DOWN

(Ω)2RPULL-UP

(Ω)3

3.3 V LVTTL / 3.3 V LVCMOS 8mA 50 150

2.5 V LVCMOS 8 mA 50 100

1.8 V LVCMOS 4 mA 100 112

1.5 V LVCMOS 2 mA 200 224

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance

values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design

considerations and detailed output buffer resistances, use the corresponding IBIS models located on the

SoC Products Group website at http://www.actel.com/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances

Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values

VCCxxxxIOBx

R(WEAK PULL-UP)1

(Ω)R(WEAK PULL-DOWN)2

(Ω)

Min. Max. Min. Max.

3.3 V 10 k 45 k 10 k 45 k

2.5 V 11 k 55 k 12 k 74 k

1.8 V 18 k 70 k 17 k 110 k

1.5 V 19 k 90 k 19 k 140 k

Notes:

1. R(WEAK PULL-DO W N -MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN)

2. R(WEAK PULL-UP -MA X) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)

SmartFusion DC and Switching Characteristics

2-28 Revision 7

Table 2-30 • I/O Short Currents IOSH/IOSL

Applicable to FPGA I/O Banks

Drive Strength IOSL (mA)*IOSH (mA)*

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 27 25

4 mA 27 25

6 mA 54 51

8 mA 54 51

12 mA 109 103

16 mA 127 132

24 mA 181 268

2.5 V LVCMOS 2 mA 18 16

4 mA 18 16

6 mA 37 32

8 mA 37 32

12 mA 74 65

16 mA 87 83

24 mA 124 169

1.8 V LVCMOS 2 mA 11 9

4 mA 22 17

6 mA 44 35

8 mA 51 45

12 mA 74 91

16 mA 74 91

1.5 V LVCMOS 2 mA 16 13

4 mA 33 25

6 mA 39 32

8 mA 55 66

12 mA 55 66

3.3 V PCI/PCI-X Per PCI/PCI-X specification 109 103

Note: *TJ = 85°C.

Table 2-31 • I/O Short Currents IOSH/IOSL

Applicable to MSS I/O Banks

Drive Strength IOSL (mA)* IOSH (mA)*

3.3 V LVTTL / 3.3 V LVCMOS 8 mA 54 51

2.5 V LVCMOS 8 mA 37 32

1.8 V LVCMOS 4 mA 22 17

1.5 V LVCMOS 2 mA 16 13

Note: *TJ = 85°C

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-29

The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The

reliability data below is based on a 3.3 V, 12 mA I/O setting, which is the worst case for this type of

analysis.

For example, at 100°C, the short current condition would have to be sustained for more than 2200

operation hours to cause a reliability concern. The I/O design does not contain any short circuit

protection, but such protection would only be needed in extremely prolonged stress conditions.

Table 2-32 • Duration of Short Circuit Event before Failure

Temperature Time before Failure

–40°C > 20 years

0°C > 20 years

25°C > 20 years

70°C 5 years

85°C 2 years

100°C 6 months

Table 2-33 • Schmitt Trigger Input Hysteresis

Hysteresis Voltage Value (typi ca l) for Schmitt Mode Input Buffers

Input Buffer Configuration Hysteresis Value (typical)

3.3 V LVTTL / LVCMOS / PCI / PCI-X (Schmitt trigger mode) 240 mV

2.5 V LVCMOS (Schmitt trigger mode) 140 mV

1.8 V LVCMOS (Schmitt trigger mode) 80 mV

1.5 V LVCMOS (Schmitt trigger mode) 60 mV

Table 2-34 • I/O Input Rise Time, Fall Time, and Related I/O Reliability

Input Buffer Input Rise/Fall Time (min.) Input Rise/Fall Time (max.) Reliability

LVTTL/LVCMOS No requirement 10 ns * 20 years (100°C)

LVDS/B-LVDS/

M-LVDS/LVPECL

No requirement 10 ns * 10 years (100°C)

Note: *The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the

noise is low, then the rise time and fall time of input buffers can be increased beyond the

maximum value. The longer the rise/fall ti mes, the more susceptible the i nput signal is to the board

noise. Microsemi SoC Products Group recommends signal integrity evaluation/ch aracterization of

the system to ensure that there is no excessive no ise couplin g into input sig nals.

SmartFusion DC and Switching Characteristics

2-30 Revision 7

Single-Ended I/O Characteristics

3.3 V LVTTL / 3.3 V LVCMOS

Low-Voltage Transistor–Transistor Logic (LVTTL) is a general-purpose standard (EIA/JESD) for 3.3 V

applications. It uses an LVTTL input buffer and push-pull output buffer.

Table 2-35 • Minimum and Maximum DC Input and Output Levels

Applicable to FPGA I/O Banks

3.3 V LVTTL /

3.3 V LVCMOS VIL V IH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmAMax.

mA1Max.

mA1µA2µA2

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 27 25 15 15

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 27 25 15 15

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 54 51 15 15

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 54 51 15 15

12 mA –0.3 0.8 2 3.6 0.4 2.4 12 12 109 103 15 15

16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 127 132 15 15

24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 181 268 10 10

Notes:

1. Currents are measured at 100°C junction temperature and maximum voltage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Table 2-36 • Minimum and Maximum DC Input and Output Levels

Applicable to MSS I/O Banks

3.3 V LVTTL /

3.3 V LVCMOS VIL V IH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmAMax.

mA1Max.

mA1µA2µA2

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 54 51 15 15

Notes:

1. Currents are measured at 100°C juncti on temperature and maximum voltage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Figure 2-6 • AC Loading

Table 2-37 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 3.3 1.4 – 35

Note: *Measuring point = Vtrip. See Table 2-22 on pa g e 2-24 for a complete table of trip points.

Test Point

Enable Path

Datapath 35 pF

R = 1 K R to GND for t

/ t

ZHS

R to VCCxxxxIOBx for t

/ t

ZLS

35 pF for t

/ t

ZHS

/ t

ZLS

5 pF for t

/ t

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-31

Timing Characteristics

Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.60 7.20 0.04 0.97 0.39 7.34 6.18 2.52 2.46 9.39 8.23 ns

–1 0.50 6.00 0.03 0.81 0.32 6.11 5.15 2.10 2.05 7.83 6.86 ns

8 mA Std. 0.60 4.64 0.04 0.97 0.39 4.73 3.84 2.85 3.02 6.79 5.90 ns

–1 0.50 3.87 0.03 0.81 0.32 3.94 3.20 2.37 2.52 5.65 4.91 ns

12 mA Std. 0.60 3.37 0.04 0.97 0.39 3.43 2.67 3.07 3.39 5.49 4.73 ns

–1 0.50 2.81 0.03 0.81 0.32 2.86 2.23 2.55 2.82 4.58 3.94 ns

16 mA Std. 0.60 3.18 0.04 0.97 0.39 3.24 2.43 3.11 3.48 5.30 4.49 ns

–1 0.50 2.65 0.03 0.81 0.32 2.70 2.03 2.59 2.90 4.42 3.74 ns

24 mA Std. 0.60 2.93 0.04 0.97 0.39 2.99 2.03 3.17 3.83 5.05 4.09 ns

–1 0.50 2.45 0.03 0.81 0.32 2.49 1.69 2.64 3.19 4.21 3.41 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-39 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.60 9.75 0.04 0.97 0.39 9.93 8.22 2.52 2.31 11.99 10.28 ns

–1 0.50 8.12 0.03 0.81 0.32 8.27 6.85 2.10 1.93 9.99 8.57 ns

8 mA Std. 0.60 6.96 0.04 0.97 0.39 7.09 5.85 2.84 2.87 9.15 7.91 ns

–1 0.50 5.80 0.03 0.81 0.32 5.91 4.88 2.37 2.39 7.62 6.59 ns

12 mA Std. 0.60 5.35 0.04 0.97 0.39 5.45 4.58 3.06 3.23 7.51 6.64 ns

–1 0.50 4.46 0.03 0.81 0.32 4.54 3.82 2.55 2.69 6.26 5.53 ns

16 mA Std. 0.60 5.01 0.04 0.97 0.39 5.10 4.30 3.11 3.32 7.16 6.36 ns

–1 0.50 4.17 0.03 0.81 0.32 4.25 3.58 2.59 2.77 5.97 5.30 ns

24 mA Std. 0.60 4.67 0.04 0.97 0.39 4.75 4.28 3.16 3.66 6.81 6.34 ns

–1 0.50 3.89 0.03 0.81 0.32 3.96 3.57 2.64 3.05 5.68 5.28 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-40 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to MSS I/O Banks

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units

8 mA Std. 0.22 2.31 0.09 0.94 1.30 0.22 2.35 1.86 2.20 2.45 ns

–1 0.18 1.92 0.07 0.78 1.09 0.18 1.96 1.55 1.83 2.04 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-32 Revision 7

2.5 V LVCMOS

Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 2.5 V applications. It uses a 5 V–tolerant input buffer and push-pull output buffer.

Table 2-41 • Minimum and Maximum DC Input and Output Levels

Applicable to FPGA I/O Banks

2.5 V LVCMOS VIL V IH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmAMax.

mA1Max.

mA1µA2µA2

2 mA –0.3 0.7 1.7 2.7 0.7 1.7 2 2 18 16 15 15

4 mA –0.3 0.7 1.7 2.7 0.7 1.7 4 4 18 16 15 15

6 mA –0.3 0.7 1.7 2.7 0.7 1.7 6 6 37 32 15 15

8 mA –0.3 0.7 1.7 2.7 0.7 1.7 8 8 37 32 15 15

12 mA –0.3 0.7 1.7 2.7 0.7 1.7 12 12 74 65 15 15

16 mA –0.3 0.7 1.7 2.7 0.7 1.7 16 16 87 83 15 15

24 mA –0.3 0.7 1.7 2.7 0.7 1.7 24 24 124 169 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Table 2-42 • Minimum and Maximum DC Input and Output Levels

Applicable to MSS I/O Banks

2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmAMax.

mA1Max.,

mA1µA2µA2

8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 37 32 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Figure 2-7 • AC Loading

Table 2-43 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 2.5 1.2 – 35

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

Test Point

Enable Path

Datapath 35 pF

R = 1 K R to GND for t

/ t

ZHS

R to VCCxxxxIOBx for t

/ t

ZLS

35 pF for t

/ t

ZHS

/ t

ZLS

5 pF for t

/ t

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-33

Timing Characteristics

Table 2-44 • 2.5 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 2.3 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.55 8.10 0.04 1.23 0.39 7.37 8.10 2.54 2.17 9.43 10.15 ns

–1 0.46 6.75 0.03 1.03 0.32 6.14 6.75 2.12 1.81 7.85 8.46 ns

8 mA Std. 0.55 4.85 0.04 1.23 0.39 4.76 4.85 2.90 2.83 6.82 6.91 ns

–1 0.46 4.04 0.03 1.03 0.32 3.97 4.04 2.42 2.36 5.68 5.76 ns

12 mA Std. 0.60 3.28 0.04 1.23 0.39 3.46 3.23 3.15 3.24 5.52 5.29 ns

–1 0.50 2.73 0.03 1.03 0.32 2.88 2.69 2.62 2.70 4.60 4.41 ns

16 mA Std. 0.60 3.09 0.04 1.23 0.39 3.27 2.88 3.20 3.35 5.33 4.94 ns

–1 0.50 2.57 0.03 1.03 0.32 2.72 2.40 2.67 2.79 4.44 4.12 ns

24 mA Std. 0.60 2.95 0.04 1.23 0.39 3.01 2.31 3.27 3.76 5.07 4.37 ns

–1 0.50 2.46 0.03 1.03 0.32 2.51 1.93 2.73 3.13 4.22 3.64 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-45 • 2.5 V LVCMOS Low Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 2.3 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.55 10.50 0.04 1.23 0.39 10.69 10.50 2.54 2.07 12.75 12.56 ns

–1 0.46 8.75 0.03 1.03 0.32 8.91 8.75 2.12 1.73 10.62 10.47 ns

8 mA Std. 0.55 7.61 0.04 1.23 0.39 7.46 7.19 2.81 2.66 9.52 9.25 ns

–1 0.46 6.34 0.03 1.03 0.32 6.22 5.99 2.34 2.22 7.93 7.71 ns

12 mA Std. 0.60 5.92 0.04 1.23 0.39 5.79 5.45 3.04 3.06 7.85 7.51 ns

–1 0.50 4.93 0.03 1.03 0.32 4.83 4.54 2.53 2.55 6.54 6.26 ns

16 mA Std. 0.60 5.53 0.04 1.23 0.39 5.40 5.09 3.09 3.16 7.46 7.14 ns

–1 0.50 4.61 0.03 1.03 0.32 4.50 4.24 2.58 2.64 6.22 5.95 ns

24 mA Std. 0.60 5.18 0.04 1.23 0.39 5.28 5.14 3.27 3.64 7.34 7.20 ns

–1 0.50 4.32 0.03 1.03 0.32 4.40 4.29 2.72 3.03 6.11 6.00 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-46 • 2.5 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to MSS I/O Banks

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units

8 mA Std. 0.22 2.35 0.09 1.18 1.39 0.22 2.40 2.18 2.19 2.32 ns

–1 0.18 1.96 0.07 0.99 1.16 0.18 2.00 1.82 1.82 1.93 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-34 Revision 7

1.8 V LVCMOS

Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer.

Table 2-47 • Minimum and Maximum DC Input and Output Levels

Applicable to FPGA I/O Banks

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive

Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

Max.

mA1Max.

mA1µA2µA2

2 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

2 2 11 9 15 15

4 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

4 4 22 17 15 15

6 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

6 6 44 35 15 15

8 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

8 8 51 45 15 15

12 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

12 12 74 91 15 15

16 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.9 0.45 VCCxxxxIOBx

– 0.45

16 16 74 91 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Table 2-48 • Minimum and Maximum DC Input and Output Levels

Applicable to MSS I/O Banks

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive

Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

Max.

mA1Max.

mA1µA2µA2

4 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

3.6 0.45 VCCxxxxIOBx

– 0.45

4 4 22 17 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Figure 2-8 • AC Loading

Table 2-49 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 1.8 0.9 – 35

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

Test Point

Enable Path

Datapath 35 pF

R = 1 K R to GND for t

/ t

ZHS

R to VCCxxxxIOBx for t

/ t

ZLS

35 pF for t

/ t

ZHS

/ t

ZLS

5 pF for t

/ t

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-35

Timing Characteristics

Table 2-50 • 1.8 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 1.7 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.60 11.06 0.04 1.14 0.39 8.61 11.06 2.61 1.59 10.67 13.12 ns

–1 0.50 9.22 0.03 0.95 0.32 7.17 9.22 2.18 1.33 8.89 10.93 ns

4 mA Std. 0.60 6.46 0.04 1.14 0.39 5.53 6.46 3.04 2.66 7.59 8.51 ns

–1 0.50 5.38 0.03 0.95 0.32 4.61 5.38 2.54 2.22 6.33 7.10 ns

6 mA Std. 0.60 4.16 0.04 1.14 0.39 3.99 4.16 3.34 3.18 6.05 6.22 ns

–1 0.50 3.47 0.03 0.95 0.32 3.32 3.47 2.78 2.65 5.04 5.18 ns

8 mA Std. 0.60 3.69 0.04 1.14 0.39 3.76 3.67 3.40 3.31 5.81 5.73 ns

–1 0.50 3.07 0.03 0.95 0.32 3.13 3.06 2.84 2.76 4.85 4.78 ns

12 mA Std. 0.60 3.38 0.04 1.14 0.39 3.44 2.86 3.50 3.82 5.50 4.91 ns

–1 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns

16 mA Std. 0.60 3.38 0.04 1.14 0.39 3.44 2.86 3.50 3.82 5.50 4.91 ns

–1 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-51 • 1.8 V LVCMOS Low Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 1.7 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.60 14.24 0.04 1.14 0.39 13.47 14.24 2.62 1.54 15.53 16.30 ns

–1 0.50 11.87 0.03 0.95 0.32 11.23 11.87 2.18 1.28 12.94 13.59 ns

4 mA Std. 0.60 9.74 0.04 1.14 0.39 9.92 9.62 3.05 2.57 11.98 11.68 ns

–1 0.50 8.11 0.03 0.95 0.32 8.26 8.02 2.54 2.14 9.98 9.74 ns

6 mA Std. 0.60 7.67 0.04 1.14 0.39 7.81 7.24 3.34 3.08 9.87 9.30 ns

–1 0.50 6.39 0.03 0.95 0.32 6.51 6.03 2.79 2.56 8.23 7.75 ns

8 mA Std. 0.60 7.15 0.04 1.14 0.39 7.29 6.75 3.41 3.21 9.34 8.80 ns

–1 0.50 5.96 0.03 0.95 0.32 6.07 5.62 2.84 2.68 7.79 7.34 ns

12 mA Std. 0.60 6.76 0.04 1.14 0.39 6.89 6.75 3.50 3.70 8.95 8.81 ns

–1 0.50 5.64 0.03 0.95 0.32 5.74 5.62 2.92 3.08 7.46 7.34 ns

16 mA Std. 0.60 6.76 0.04 1.14 0.39 6.89 6.75 3.50 3.70 8.95 8.81 ns

–1 0.50 5.64 0.03 0.95 0.32 5.74 5.62 2.92 3.08 7.46 7.34 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-36 Revision 7

Table 2-52 • 1.8 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 1.7 V

Applicable to MSS I/O Banks

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units

4 mA Std. 0.22 2.77 0.09 1.09 1.64 0.22 2.82 2.72 2.21 2.25 ns

–1 0.18 2.31 0.07 0.91 1.37 0.18 2.35 2.27 1.84 1.87 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-37

1.5 V LVCMOS (JESD8-11)

Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer.

Table 2-53 • Minimum and Maximum DC Input and Output Levels

Applicable to FPGA I/O Banks

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive

Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

Max.

mA1Max.

mA1µA2µA2

2 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25*

VCCxxxxIOBx

0.75 *

VCCxxxxIOBx

2 2 16 13 15 15

4 mA –

0.3

0.35*

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25*

VCCxxxxIOBx

0.75 *

VCCxxxxIOBx

4 4 33 25 15 15

6 mA –

0.3

0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25*

VCCxxxxIOBx

0.75 *

VCCxxxxIOBx

6 6 39 32 15 15

8 mA –

0.3

0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25* VCC 0.75 *

VCCxxxxIOBx

8 8 55 66 15 15

12 mA –

0.3

0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25 *

VCCxxxxIOBx

0.75 *

VCCxxxxIOBx

12 12 55 66 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Table 2-54 • Minimum and Maximum DC Input and Output Levels

Applicable to MSS I/O Banks

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive

Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmA

Max.

mA1Max.

mA1µA2µA

2 mA –0.3 0.35 *

VCCxxxxIOBx

0.65 *

VCCxxxxIOBx

1.575 0.25 *

VCCxxxxIOBx

0.75 *

VCCxxxxIOBx

2 2 16 13 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

3. Software default selection highlighted in gray.

Figure 2-9 • AC Loading

Table 2-55 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Inp ut High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 1.5 0.75 – 35

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

Test Point

Enable Path

Datapath 35 pF

R = 1 K R to GND for t

/ t

ZHS

R to VCCxxxxIOBx for t

/ t

ZLS

35 pF for t

/ t

ZHS

/ t

ZLS

5 pF for t

/ t

SmartFusion DC and Switching Characteristics

2-38 Revision 7

Timing Characteristics

Table 2-56 • 1.5 V LVCMOS High Slew

Worst Commercial-Case C onditions: TJ = 85°C, Worst-C ase VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 1.425 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP t

DIN t

PY t

EOUT t

ZL t

ZH t

LZ t

HZ t

ZLS t

ZHS Units

2 m Std. 0.60 7.79 0.04 1.34 0.39 6.43 7.79 3.19 2.59 8.49 9.85 ns

–1 0.50 6.49 0.03 1.12 0.32 5.36 6.49 2.66 2.16 7.08 8.21 ns

4 mA Std. 0.60 4.95 0.04 1.34 0.39 4.61 4.96 3.53 3.19 6.67 7.02 ns

–1 0.50 4.13 0.03 1.12 0.32 3.85 4.13 2.94 2.66 5.56 5.85 ns

6 mA Std. 0.60 4.36 0.04 1.34 0.39 4.34 4.36 3.60 3.34 6.40 6.42 ns

–1 0.50 3.64 0.03 1.12 0.32 3.62 3.64 3.00 2.78 5.33 5.35 ns

8 mA Std. 0.60 3.89 0.04 1.34 0.39 3.96 3.34 3.72 3.92 6.02 5.40 ns

–1 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns

12 mA Std. 0.60 3.89 0.04 1.34 0.39 3.96 3.34 3.72 3.92 6.02 5.40 ns

–1 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-57 • 1.5 V LVCMOS Low Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 1.4 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.60 11.96 0.04 1.34 0.39 12.18 11.70 3.20 2.47 14.24 13.76 ns

–1 0.50 9.96 0.03 1.12 0.32 10.15 9.75 2.67 2.06 11.86 11.46 ns

4 mA Std. 0.60 9.51 0.04 1.34 0.39 9.68 8.76 3.54 3.07 11.74 10.82 ns

–1 0.50 7.92 0.03 1.12 0.32 8.07 7.30 2.95 2.56 9.79 9.02 ns

6 mA Std. 0.60 8.86 0.04 1.34 0.39 9.03 8.17 3.61 3.22 11.08 10.23 ns

–1 0.50 7.39 0.03 1.12 0.32 7.52 6.81 3.01 2.68 9.24 8.52 ns

8 mA Std. 0.60 8.44 0.04 1.34 0.39 8.60 8.18 3.73 3.78 10.66 10.24 ns

–1 0.50 7.04 0.03 1.12 0.32 7.17 6.82 3.11 3.15 8.88 8.53 ns

12 mA Std. 0.60 8.44 0.04 1.34 0.39 8.60 8.18 3.73 3.78 10.66 10.24 ns

–1 0.50 7.04 0.03 1.12 0.32 7.17 6.82 3.11 3.15 8.88 8.53 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-58 • 1.5 V LVCMOS High Slew

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to MSS I/O Banks

Drive

Strength Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.22 3.24 0.09 1.28 1.86 0.22 3.30 3.20 2.24 2.21 ns

–1 0.18 2.70 0.07 1.07 1.55 0.18 2.75 2.67 1.87 1.85 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-39

3.3 V PCI, 3.3 V PCI-X

Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus

applications.

AC loadings are defined per the PCI/PCI-X specifications for the datapath; SoC Products Group loadings

for enable path characterization are described in Figure 2-10.

AC loadings are defined per PCI/PCI-X specifications for the datapath; SoC Products Group loading for

tristate is described in Table 2-60.

Timing Characteristics

Table 2-59 • Minimum and Maximum DC Input and Output Levels

3.3 V PCI/PCI-X VIL VIH VOL VOH IOL IOH IOSL IOSH IIL IIH

Drive Strength Min.

VMax.

VMin.

VMax.

VMin.

VmAmAMax.

mA1Max.

mA1µA2µA2

Per PCI specification Per PCI curves 15 15

Notes:

1. Currents are measured at high temperature (100°C junction temperature) and maximum vol tage.

2. Currents are measured at 85°C juncti on temperature.

Figure 2-10 • AC Loading

Test Point

Enable Path

R to VCCXXXXIOBX for t

/ t

ZLS

10 pF for t

/ t

ZHS

/ t

ZLS

5 pF for t

/ t

R to GND for t

/ t

ZHS

R = 1 k

Test Point

Datapath

R = 25 R to VCCXXXXIOBX for t

(F)

R to GND for t

(R)

Table 2-60 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 3.3 0.285 * VCCxxxxIOBx for tDP(R)

0.615 * VCCxxxxIOBx for tDP(F)

–10

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

Table 2-61 • 3.3 V PCI

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.60 2.54 0.04 0.82 0.39 2.58 1.88 3.06 3.39 4.64 3.94 ns

–1 0.50 2.11 0.03 0.68 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-62 • 3.3 V PCI-X

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCxxxxIOBx = 3.0 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.60 2.54 0.04 0.77 0.39 2.58 1.88 3.06 3.39 4.64 3.94 ns

–1 0.50 2.11 0.03 0.64 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-40 Revision 7

Differential I/O Characteristics

Physical Implementation

Configuration of the I/O modules as a differential pair is handled by SoC Products Group Designer

software when the user instantiates a differential I/O macro in the design.

Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output

support for bidirectional I/Os or tristates with the LVPECL standards.

LVDS

Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. It

requires that one data bit be carried through two signal lines, so two pins are needed. It also requires

external resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-11. The

building blocks of the LVDS transmitter-receiver are one transmitter macro, one receiver macro, three

board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver

resistors are different from those used in the LVPECL implementation because the output standard

specifications are different.

Along with LVDS I/O, SmartFusion cSoCs also support bus LVDS structure and multipoint LVDS

(M-LVDS) configuration (up to 40 nodes).

Figure 2-11 • LVDS Circuit Diagram and Board-Level Implementation

140 Ω100 Ω

Z0 = 50 Ω

165 Ω

–

INBUF_LVDS

OUTBUF_LVDS

FPGA FPGA

Bourns Part Number: CAT16-LV4F12

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-41

Timing Characteristics

Table 2-63 • LVDS Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Typ. Max. Units

VCCFPGAIOBx Supply voltage 2.375 2.5 2.625 V

VOL Output low voltage 0.9 1.075 1.25 V

VOH Output high voltage 1.25 1.425 1.6 V

IOL1Output lower current 0.65 0.91 1.16 mA

IOH1Output high current 0.65 0.91 1.16 mA

VI Input voltage 0 2.925 V

IIH2Input high leakage current 15 µA

IIL2Input low leakage current 15 µA

VODIFF Differential output voltage 250 350 450 mV

VOCM Output common mode voltage 1.125 1.25 1.375 V

VICM Input common mode voltage 0.05 1.25 2.35 V

VIDIFF Input differential voltage 100 350 mV

Notes:

1. IOL/IOH defined by VODIFF/(resistor network).

2. Currents are measured at 85°C junction temperature.

Table 2-64 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measur ing Point* (V) VREF (typ.) (V)

1.075 1.325 Cross point –

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

Table 2-65 • LVDS

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCC F PGA IOBx = 2.3 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.60 1.83 0.04 1.87 ns

–1 0.50 1.53 0.03 1.55 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on

page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-42 Revision 7

B-LVDS/M-LVDS

Bus LVDS (B-LVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to

high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain

any combination of drivers, receivers, and transceivers. SoC Products Group LVDS drivers provide the

higher drive current required by B-LVDS and M-LVDS to accommodate the loading. The drivers require

series terminations for better signal quality and to control voltage swing. Termination is also required at

both ends of the bus since the driver can be located anywhere on the bus. These configurations can be

implemented using the TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations.

Multipoint designs using SoC Products Group LVDS macros can achieve up to 200 MHz with a maximum

of 20 loads. A sample application is given in Figure 2-12. The input and output buffer delays are available

in the LVDS section in Tab le 2- 6 5.

Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required

differential voltage, in worst-case commercial operating conditions, at the farthest receiver: RS=60Ω

and RT=70Ω, given Z0=50Ω (2") and Zstub =50Ω (~1.5").

Figure 2-12 • B-LVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers

...

BIBUF_LVDS

+-T

+-R

+-T

EN EN EN EN EN

Receiver Transceiver Receiver TransceiverDriver

RSRSRSRSRSRSRSRS

RSRS

Zstub Zstub Zstub Zstub Zstub Zstub Zstub Zstub

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-43

LVPECL

Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires

that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires

external resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-13. The

building blocks of the LVPECL transmitter-receiver are one transmitter macro, one receiver macro, three

board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver

resistors are different from those used in the LVDS implementation because the output standard

specifications are different.

Timing Characteristics

Figure 2-13 • LVPECL Circuit Diagram and Board-Level Im plementation

Table 2-66 • Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Max. Min. Max. Min. Max. Units

VCCFPGAIOBx Supply Voltage 3.0 3.3 3.6 V

VOL Output Low Voltage 0.96 1.27 1.06 1.43 1.30 1.57 V

VOH Output High Voltage 1.8 2.11 1.92 2.28 2.13 2.41 V

VIL, VIH Input Low, Input High Voltages 0 3.3 0 3.6 0 3.9 V

VODIFF Differential Output Voltage 0.625 0.97 0.625 0.97 0.625 0.97 V

VOCM Output Common-Mode Voltage 1.762 1.98 1.762 1.98 1.762 1.98 V

VICM Input Common-Mode Voltage 1.01 2.57 1.01 2.57 1.01 2.57 V

VIDIFF Input Differential Voltage 300 300 300 mV

Table 2-67 • AC Waveforms, Measuring Points, and Cap acitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V)

1.64 1.94 Cross point –

*Measuring point = Vtrip. See Ta ble 2-22 on page 2-24 for a complete table of trip points.

187 W 100 Ω

= 50 Ω

100 Ω

–

INBUF_LVPECL

OUTBUF_LVPECL

FPGA FPGA

Bourns Part Number: CAT16-PC4F12

Table 2-68 • LVPECL

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V,

Worst-Case VCC F PGA IOBx = 3.0 V

Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.60 1.76 0.04 1.76 ns

–1 0.50 1.46 0.03 1.46 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on

page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-44 Revision 7

I/O Register Specifications

Fully Registered I/O Buffers with Synchronous Enable and

Asynchronous Preset

Figure 2-14 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchro nous Preset

INBUF

INBUF INBUF

TRIBUF

CLKBUF

INBUF

CLKBUF

Data Input I/O Register with:

Active High Enable

Active High Preset

Positive-Edge Triggered

Data Output Register and

Enable Output Register with:

Active High Enable

Active High Preset

Postive-Edge Triggered

Pad Out

CLK

Enable

Preset

Data_out

Data

EOUT

DOUT

Enable

CLK

DFN1E1P1

PRE

DFN1E1P1

PRE

DFN1E1P1

PRE

D_Enable

Core

Array

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-45

Table 2-69 • Paramete r Definition and Measuring Nodes

Parameter Name Parameter Definition Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register H, DOUT

tOSUD Data Setup Time for the Output Data Register F, H

tOHD Data Hold Time for the Output Data Register F, H

tOSUE Enable Setup Time for the Output Data Register G, H

tOHE Enable Hold Time for the Output Data Register G, H

tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L, DOUT

tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H

tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H

tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT

tOESUD Data Setup Time for the Output Enable Register J, H

tOEHD Data Hold Time for the Output Enable Register J, H

tOESUE Enable Setup Time for the Output Enable Register K, H

tOEHE Enable Hold Time for the Output Enable Register K, H

tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT

tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H

tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H

tICLKQ Clock-to-Q of the Input Data Register A, E

tISUD Data Setup Time for the Input Data Register C, A

tIHD Data Hold Time for the Input Data Register C, A

tISUE Enable Setup Time for the Input Data Register B, A

tIHE Enable Hold Time for the Input Data Register B, A

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A

*See Figure 2-14 on page 2-44 for more information.

SmartFusion DC and Switching Characteristics

2-46 Revision 7

Fully Registered I/O Buffers with Synchronous Enable and

Asynchronous Clear

Figure 2-15 • Timing Model of the Registered I /O Buffers with Synchr onous Enable a nd Asynchronous Clear

Enable

CLK

Pad Out

CLK

Enable

CLR

Data_out

Data

EOUT

DOUT

Core

Array

DFN1E1C1

CLR

DFN1E1C1

CLR

DFN1E1C1

CLR

D_Enable

CLKBUF

INBUF

TRIBUF

INBUF INBUF CLKBUF

INBUF

Data Input I/O Register with

Active High Enable

Active High Clear

Positive-Edge Triggered Data Output Register and

Enable Output Register with

Active High Enable

Active High Clear

Positive-Edge Triggered

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-47

Table 2-70 • Paramete r Definition and Measuring Nodes

Parameter Name Parameter Definition Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT

tOSUD Data Setup Time for the Output Data Register FF, HH

tOHD Data Hold Time for the Output Data Register FF, HH

tOSUE Enable Setup Time for the Output Data Register GG, HH

tOHE Enable Hold Time for the Output Data Register GG, HH

tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT

tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH

tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH

tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT

tOESUD Data Setup Time for the Output Enable Register JJ, HH

tOEHD Data Hold Time for the Output Enable Register JJ, HH

tOESUE Enable Setup Time for the Output Enable Register KK, HH

tOEHE Enable Hold Time for the Output Enable Register KK, HH

tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT

tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH

tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH

tICLKQ Clock-to-Q of the Input Data Register AA, EE

tISUD Data Setup Time for the Input Data Register CC, AA

tIHD Data Hold Time for the Input Data Register CC, AA

tISUE Enable Setup Time for the Input Data Register BB, AA

tIHE Enable Hold Time for the Input Data Register BB, AA

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA

*See Figure 2-15 on page 2-46 for more information.

SmartFusion DC and Switching Characteristics

2-48 Revision 7

Input Register

Timing Characteristics

Figure 2-16 • Input Register Timing Diagram

50%

Preset

Clear

Out_1

CLK

Data

Enable

ISUE

50%

ISUD

IHD

50% 50%

ICLKQ

IHE

IRECPRE

IREMPRE

IRECCLR

IREMCLR

IWCLR

IWPRE

IPRE2Q

ICLR2Q

ICKMPWH

ICKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-71 • Input Data Register Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tICLKQ Clock-to-Q of the Input Data Register 0.24 0.29 ns

tISUD Data Setup Time for the Input Data Register 0.27 0.32 ns

tIHD Data Hold Time for the Input Data Register 0.00 0.00 ns

tISUE Enable Setup Time for the Input Data Register 0.38 0.45 ns

tIHE Enable Hold Time for the Input Data Register 0.00 0.00 ns

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.46 0.55 ns

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.46 0.55 ns

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 0.00 ns

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.23 0.27 ns

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 0.00 ns

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.23 0.27 ns

tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.22 0.22 ns

tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.22 0.22 ns

tICKMPWH Clock Minimum Pulse Width High for the Input Data Register 0.36 0.36 ns

tICKMPWL Clock Minimum Pulse Width Low for the Input Data Register 0.32 0.32 ns

Note: For the derating values at sp ecific junctio n temperature and voltage sup ply levels, refer to Table 2-7 on page 2-9

for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-49

Output Register

Timing Characteristics

Figure 2-17 • Output Register Timing Diagram

Preset

Clear

DOUT

CLK

Data_out

Enable

tOSUE

50%

tOSUD tOHD

50% 50%

tOCLKQ

tOHE

tORECPRE

tOREMPRE

tORECCLR tOREMCLR

tOWCLR

tOWPRE

tOPRE2Q

tOCLR2Q

tOCKMPWH tOCKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-72 • Output Data Regi ster Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tOCLKQ Clock-to-Q of the Output Data Register 0.60 0.72 ns

tOSUD Data Setup Time for the Output Data Register 0.32 0.38 ns

tOHD Data Hold Time for the Output Data Register 0.00 0.00 ns

tOSUE Enable Setup Time for the Output Data Register 0.44 0.53 ns

tOHE Enable Hold Time for the Output Data Register 0.00 0.00 ns

tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 0.82 0.98 ns

tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 0.82 0.98 ns

tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 0.00 ns

tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.23 0.27 ns

tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 0.00 ns

tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.23 0.27 ns

tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.22 0.22 ns

tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.22 0.22 ns

tOCKMPWH Clock Minimum Pulse Width High for the Output Data Register 0.36 0.36 ns

tOCKMPWL Clock Minimum Pulse Width Low for the Output Data Register 0.32 0.32 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on

page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-50 Revision 7

Output Enable Register

Timing Characteristics

Figure 2-18 • Output Enable Register Timing Diagram

50%

Preset

Clear

EOUT

CLK

D_Enable

Enable

OESUE

50%

OESUD

OEHD

50% 50%

OECLKQ

OEHE

OERECPRE

OEREMPRE

OERECCLR

OEREMCLR

OEWCLR

OEWPRE

OEPRE2Q

OECLR2Q

OECKMPWH

OECKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-73 • Output Enable Register Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tOECLKQ Clock-to-Q of the Output Enable Register 0.45 0.54 ns

tOESUD Data Setup Time for the Output Enable Register 0.32 0.38 ns

tOEHD Data Hold Time for the Output Enable Register 0.00 0.00 ns

tOESUE Enable Setup Time for the Output Enable Register 0.44 0.53 ns

tOEHE Enable Hold Time for the Output Enable Register 0.00 0.00 ns

tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 0.68 0.81 ns

tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 0.68 0.81 ns

tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 0.00 ns

tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.23 0.27 ns

tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 0.00 ns

tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.23 0.27 ns

tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.22 0.22 ns

tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.22 0.22 ns

tOECKMPWH Clock Minimum Pulse Width High for the Output Enable Register 0.36 0.36 ns

tOECKMPWL Clock Minimum Pulse Width Low for the Output Enable Register 0.32 0.32 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-51

DDR Module Specifications

Input DDR Module

Figure 2- 19 • Input DDR Timing Model

Table 2-74 • Parameter Definitions

Parameter Name Paramete r Definition Measuring Nodes (from, to)

tDDRICLKQ1 Clock-to-Out Out_QR B, D

tDDRICLKQ2 Clock-to-Out Out_QF B, E

tDDRISUD Data Setup Time of DDR input A, B

tDDRIHD Data Hold Time of DDR input A, B

tDDRICLR2Q1 Clear-to-Out Out_QR C, D

tDDRICLR2Q2 Clear-to-Out Out_QF C, E

tDDRIREMCLR Clear Removal C, B

tDDRIRECCLR Clear Recovery C, B

Input DDR

Data

CLK

CLKBUF

INBUF

Out_QF

(to core)

FF2

FF1

INBUF

CLR

DDR_IN

Out_QR

(to core)

SmartFusion DC and Switching Characteristics

2-52 Revision 7

Timing Characteristics

Figure 2-20 • Input DDR Timing Diagram

DDRICLR2Q2

DDRIREMCLR

DDRIRECCLR

DDRICLR2Q1

12 3 4 5 6 7 8 9

CLK

Data

CLR

Out_QR

Out_QF

DDRICLKQ1

246

357

DDRIHD

DDRISUD

DDRICLKQ2

Table 2-75 • Input DDR Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.42 5 V

Parameter Description –1 Units

tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.39 ns

tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.28 ns

tDDRISUD Data Setup for Input DDR 0.29 ns

tDDRIHD Data Hold for Input DDR 0.00 ns

tDDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 0.58 ns

tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.47 ns

tDDRIREMCLR Asynchronous Clear Removal time for Input DDR 0.00 ns

tDDRIRECCLR Asynchronous Clear Recovery time for Input DDR 0.23 ns

tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.22 ns

tDDRICKMPWH Clock Minimum Pulse Width High for Input DDR 0.36 ns

tDDRICKMPWL Clock Minimum Pulse Width Low for Input DDR 0.32 ns

FDDRIMAX Maximum Frequency for Input DDR 350 MHz

Note: For derating values at specific junction temperature and voltage-su pply levels, refer to Table 2-7 on page 2-9 for

derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-53

Output DDR Module

Figure 2- 21 • Output DDR Timing Model

Table 2-76 • Parameter Definitions

Parameter Name Paramete r Definition Measuring Nodes (from, to)

tDDROCLKQ Clock-to-Out B, E

tDDROCLR2Q Asynchronous Clear-to-Out C, E

tDDROREMCLR Clear Removal C, B

tDDRORECCLR Clear Recovery C, B

tDDROSUD1 Data Setup Data_F A, B

tDDROSUD2 Data Setup Data_R D, B

tDDROHD1 Data Hold Data_F A, B

tDDROHD2 Data Hold Data_R D, B

Data_F

(from core)

CLK

CLKBUF

Out

FF2

INBUF

CLR

DDR_OUT

Output DDR

FF1

OUTBUF

Data_R

(from core)

SmartFusion DC and Switching Characteristics

2-54 Revision 7

Timing Characteristics

Figure 2-22 • Output DDR Timing Diagram

116

910

28 3 9

DDROREMCLR

DDROHD1

DDROREMCLR

DDROHD2

DDROSUD2

DDROCLKQ

DDRORECCLR

CLK

Data_R

Data_F

CLR

Out

DDROCLR2Q

7104

Table 2-77 • Output DDR Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Units

tDDROCLKQ Clock-to-Out of DDR for Output DDR 0.71 ns

tDDROSUD1 Data_F Data Setup for Output DDR 0.38 ns

tDDROSUD2 Data_R Data Setup for Output DDR 0.38 ns

tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns

tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns

tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 0.81 ns

tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns

tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.23 ns

tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.22 ns

tDDROCKMPWH Clock Minimum Pulse Width High for the Output DDR 0.36 ns

tDDROCKMPWL Clock Minimum Pulse Width Low for the Output DDR 0.32 ns

FDDOMAX Maximum Frequency for the Output DDR 350 MHz

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-55

VersaTile Characteristics

VersaTile Specifications as a Combinatorial Module

The SmartFusion library offers all combinations of LUT-3 combinatorial functions. In this section, timing

characteristics are presented for a sample of the library. For more details, refer to the IGLOO/e, Fusion,

ProASIC3/E, and SmartFusion Macro Library Guide.

Figure 2- 23 • Sample of Combinatorial Cells

MAJ3

MUX2

XOR2 Y

NOR2

YOR2

INV

AND2

NAND3

XOR3 Y

NAND2

SmartFusion DC and Switching Characteristics

2-56 Revision 7

Figure 2- 24 • Timing Mode l and Waveforms

tPD

tPD = MAX(tPD(RR), tPD(RF),

tPD(FF), tPD(FR)) where edges are

applicable for the particular

combinatorial cell

NAND2 or

Any Combinatorial

Logic

tPD

50%

VCC

50%

GND

A, B, C

50% 50%

50%

(RR)

(RF) GND

OUT

GND

50%

(FF)

(FR)

tPD

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-57

Timing Characteristics

VersaTile Sp ecifications as a Sequential Module

The SmartFusion library offers a wide variety of sequential cells, including flip-flops and latches. Each

has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented

for a representative sample from the library. For more details, refer to the IGLOO/e, Fusion, ProASIC3/E,

and SmartFusion Macro Library Guide.

Table 2-78 • Comb inatorial Cell Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Combinatorial Cell Equation Parameter –1 Std. Units

INV Y = !A tPD 0.41 0.49 ns

AND2 Y = A · B tPD 0.48 0.57 ns

NAND2 Y = !(A · B) tPD 0.48 0.57 ns

OR2 Y = A + B tPD 0.49 0.59 ns

NOR2 Y = !(A + B) tPD 0.49 0.59 ns

XOR2 Y = A ⊕ Bt

PD 0.75 0.90 ns

MAJ3 Y = MAJ(A, B, C) tPD 0.71 0.85 ns

XOR3 Y = A ⊕ B ⊕ Ct

PD 0.89 1.07 ns

MUX2 Y = A !S + B S tPD 0.51 0.62 ns

AND3 Y = A · B · C tPD 0.57 0.68 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for

derating values.

Figure 2- 25 • Sample of Sequential Cells

DFN1

Data

CLK

Out

DFN1C1

Data

CLK

Out

CLR

DFI1E1P1

Data

CLK

Out

PRE

DFN1E1

Data

CLK

Out

SmartFusion DC and Switching Characteristics

2-58 Revision 7

Timing Characteristics

Figure 2-26 • Timing Model and Waveforms

PRE

CLR

Out

CLK

Data

tSUE

50%

tSUD

tHD

50% 50%

tCLKQ

tHE

tRECPRE tREMPRE

tRECCLR tREMCLRtWCLR

tWPRE

tPRE2Q tCLR2Q

tCKMPWH tCKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-79 • Register Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tCLKQ Clock-to-Q of the Core Register 0.56 0.67 ns

tSUD Data Setup Time for the Core Register 0.44 0.52 ns

tHD Data Hold Time for the Core Register 0.00 0.00 ns

tSUE Enable Setup Time for the Core Register 0.46 0.55 ns

tHE Enable Hold Time for the Core Register 0.00 0.00 ns

tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.41 0.49 ns

tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.41 0.49 ns

tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 0.00 ns

tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.23 0.27 ns

tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 0.00 ns

tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.23 0.27 ns

tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.22 0.22 ns

tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.22 0.22 ns

tCKMPWH Clock Minimum Pulse Width High for the Core Register 0.32 0.32 ns

tCKMPWL Clock Minimum Pulse Width Low for the Core Register 0.36 0.36 ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-59

Global Resource Characteristics

A2F200 Clock Tree Topology

Clock delays are device-specific. Figure 2-27 is an example of a global tree used for clock routing. The

global tree presented in Figure 2-27 is driven by a CCC located on the west side of the A2F200 device. It

is used to drive all D-flip-flops in the device.

Global Tree Timing Characteristics

Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not

include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven

and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer

to the "Clock Conditioning Circuits" section on page 2-63. Table 2-80 through Table 2-82 on page 2-61

present minimum and maximum global clock delays for the SmartFusion cSoCs. Minimum and maximum

delays are measured with minimum and maximum loading.

Figure 2-27 • Example of Global Tree Use in an A2F200 Device for Clock Routing

Central

Global Rib

VersaTile

Rows

Global Spine

CCC

SmartFusion DC and Switching Characteristics

2-60 Revision 7

Timing Characteristics

Table 2-80 • A2F500 Global Resource

Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V

Parameter Description

–1 Std.

UnitsMin.1Max.2Min.1Max.2

tRCKL Input Low Delay for Global Clock 1.54 1.73 1.84 2.08 ns

tRCKH Input High Delay for Global Clock 1.53 1.76 1.84 2.12 ns

tRCKMPWH Minimum Pulse Width High for Global Clock ns

tRCKMPWL Minimum Pulse Width Low for Global Clock ns

tRCKSW Maximum Skew for Global Clock 0.23 0.28 ns

FRMAX Maximum Frequency for Global Clock MHz

Notes:

1. Value reflects mi nimum load. The delay is measured from the CCC output to the clock pin of a seque ntial

element, located in a lightly loaded row (single element is connected to the global net).

2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,

located in a fully loaded row (all available flip-flops are connected to the global net in the row).

3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating

values.

Table 2-81 • A2F200 Global Resource

Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V

Parameter Description

–1 Std.

UnitsMin.1Max.2Min.1Max.2

tRCKL Input Low Delay for Global Clock 0.74 0.99 0.88 1.19 ns

tRCKH Input High Delay for Global Clock 0.76 1.05 0.91 1.26 ns

tRCKMPWH Minimum Pulse Width High for Global Clock ns

tRCKMPWL Minimum Pulse Width Low for Global Clock ns

tRCKSW Maximum Skew for Global Clock 0.29 0.35 ns

FRMAX Maximum Frequency for Global Clock MHz

Notes:

1. Value reflects mi nimum load. The delay is measured from the CCC output to the clock pin of a seque ntial

element, located in a lightly loaded row (single element is connected to the global net).

2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,

located in a fully loaded row (all available flip-flops are connected to the global net in the row).

3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating

values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-61

RC Oscillator

The table below describes the electrical characteristics of the RC oscillator.

RC Oscillator Characteristics

Table 2-82 • A2F060 Global Resource

Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V

Parameter Description

–1 Std.

UnitsMin.1Max.2Min.1Max.2

tRCKL Input Low Delay for Global Clock 0.75 0.96 0.90 1.15 ns

tRCKH Input High Delay for Global Clock 0.72 0.98 0.86 1.17 ns

tRCKMPWH Minimum Pulse Width High for Global Clock ns

tRCKMPWL Minimum Pulse Width Low for Global Clock ns

tRCKSW Maximum Skew for Global Clock 0.26 0.31 ns

FRMAX Maximum Frequency for Global Clock MHz

Notes:

1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential

element, locat ed in a lightly loaded row (single element is connected to the global net ).

2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element,

located in a fully loaded row (all available flip-flops are connected to the global net in the row).

3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating

values.

Table 2-83 • Electrical Characteristics of the RC Oscillator

Parameter Description Condition Min. Typ. Max. Units

FRC Operating

frequency

100 MHz

Accuracy Temperature: 0°C to 85°C

Voltage: 3.3 V ± 5%

1 %

Output jitter Period jitter (at 5 K cycles) 100 ps

Cycle-to-cycle jitter (at 5 K cycles) 100 ps

Period jitter (at 5 K cycles) with 1 KHz / 300

mV peak-to-peak noise on power supply

150 ps

Cycle-to-cycle jitter (at 5 K cycles) with 1 KHz

/ 300 mV peak-to-peak noise on power

supply

150 ps

Output duty cycle 50 %

IDYNRC Operating current 3.3 V domain 1 mA

1.5 V domain 2 mA

SmartFusion DC and Switching Characteristics

2-62 Revision 7

Main and Lower Power Crystal Oscillator

The tables below describes the electrical characteristics of the main and low power crystal oscillator.

Table 2-84 • Electrical Ch aracteristics of the Main Crystal Oscillator

Parameter Description Condition Min. Typ. Max. Units

Operating frequency Using external crystal 0.032 20 MHz

Using ceramic resonator 0.5 8 MHz

Using RC Network 0.032 4 MHz

Output duty cycle 50 %

Output jitter With 10 MHz crystal 50 ps

RMS

IDYNXTAL Operating current RC 0.6 mA

0.032–0.2 0.6 mA

0.2–2.0 0.6 mA

2.0–20.0 0.6 mA

ISTBXTAL Standby current of crystal oscillator 10 µA

PSRRXTAL Power supply noise tolerance 0.5 Vp-p

VIHXTAL Input logic level High 90%

VCC

VILXTAL Input logic level Low 10%

VCC

Startup time RC µs

0.032–0.2 µs

0.2–2.0 µs

2.0–20.0 µs

Table 2-85 • Electrical Characteristics of the Low Power Oscillator

Parameter Description Co ndition Min. Typ. Max. Un its

Operating frequency 32 KHz

Output duty cycle 50 %

Output jitter 50 ps

RMS

IDYNXTAL Operating current 32 KHz 10 µA

ISTBXTAL Standby current of crystal oscillator µA

PSRRXTAL

Power supply noise tolerance 0.5 Vp-p

VIHXTAL Input logic level High 90% of VCC V

VILXTAL Input logic level Low 10% of VCC V

Startup time Test load used: 20 pF 2.5 s

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-63

Clock Conditioning Circuits

CCC Electrical Specifications

Timing Characteristics

Table 2-86 • SmartFusion CCC/PLL Specification

Parameter Minimum Typical Maximum Units

Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 350 MHz

Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 3501MHz

Delay Increments in Programmable Delay Blocks2, 3 160 ps

Number of Programmable Values in Each

Programmable Delay Block

Input Period Jitter 1.5 ns

Acquisition Time

LockControl = 0 300 µs

LockControl = 1 6.0 ms

Tracking Jitter4

LockControl = 0 1.6 ns

LockControl = 1 0.8 ns

Output Duty Cycle 48.5 5.15 %

Delay Range in Block: Programmable Delay 12,3 0.6 5.56 ns

Delay Range in Block: Programmable Delay 22,3 0.025 5.56 ns

Delay Range in Block: Fixed Delay2,3 2.2 ns

CCC Output Peak-to-Peak Period Jitter FCCC_OUT 5,6 Maximum Peak-to-Peak Period Jitter

SSO ≤ 2 SSO ≤ 4 SSO ≤ 8 SSO ≤ 16

FG/CS PQ FG/CS PQ FG/CS PQ FG/CS PQ

0.75 MHz to 50 MHz 0.5% 1.6% 0.9% 1.6% 0.9% 1.6% 0.9% 1.8%

50 MHz to 250 MHz 1.75% 3.5% 9.3% 9.3% 9.3% 17.9% 10.0% 17.9%

250 MHz to 350 MHz 2.5% 5.2% 13.0% 13.0% 13.0% 25.0% 14.0% 25.0%

Notes:

1. One of the CCC outputs (GLA0) is used as an MSS clock and is limited to 100 MHz (maximum) by software. Details

regarding CCC/PLL are in the "PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators" chapter of the

SmartFusion Microcontroller Subsystem User's Guide.

2. This delay is a function of voltage and temperature. See Table 2-7 on page 2-9 for deratings.

3. TJ = 25°C, VCC = 1.5 V

4. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock ed ge.

Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter.

5. Measurement done with LVTTL 3.3 V 12 mA I/O drive strength and High slew rate. VCC/VCCPLL = 1.425 V,

VCCI = 3.3V, 20 pF output load. All I/Os are placed outside of the PLL bank.

6. SSOs are outputs that are synchronous to a sing le clock domain and have their clock -to-out within ± 200 ps of each other.

7. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying

the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT regardless of the output divider settings. For

example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps.

SmartFusion DC and Switching Characteristics

2-64 Revision 7

Note: Peak-to-peak jitter measurements are defi ned by T peak-to-peak = Tperiod_max – Tperiod_min.

Figure 2-28 • Peak-to-Peak Jitter Definition

period_max

period_min

Output Signal

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-65

FPGA Fabric SRAM and FIFO Characteristics

FPGA Fabric SRAM

Figure 2- 29 • RAM Models

ADDRA11 DOUTA8

DOUTA7

DOUTA0

DOUTB8

DOUTB7

DOUTB0

ADDRA10

ADDRA0

DINA8

DINA7

DINA0

WIDTHA1

WIDTHA0

PIPEA

WMODEA

BLKA

WENA

CLKA

ADDRB11

ADDRB10

ADDRB0

DINB8

DINB7

DINB0

WIDTHB1

WIDTHB0

PIPEB

WMODEB

BLKB

WENB

CLKB

RAM4K9

RADDR8 RD17

RADDR7 RD16

RADDR0 RD0

WD17

WD16

WD0

WW1

WW0

RW1

RW0

PIPE

REN

RCLK

RAM512X18

WADDR8

WADDR7

WADDR0

WEN

WCLK

RESET

SmartFusion DC and Switching Characteristics

2-66 Revision 7

Timing Waveforms

Figure 2- 30 • RAM Read for Pass-Through Output. Applicable to both RAM4K9 and RAM512x18.

Figure 2- 31 • RAM Read for Pipelined Output Applicable to both RAM4K9 and RAM512x18.

CLK

[R|W]ADDR

BLK

WEN

DOUT|RD

CYC

CKH

CKL

BKS

ENS

ENH

DOH1

BKH

CKQ1

CLK

[R|W]ADDR

BLK

WEN

DOUT|RD

A0A1A2

D0D1

tCYC

tCKH tCKL

tAS tAH

tBKS

tENS tENH

tDOH2

tCKQ2

tBKH

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-67

Figure 2- 32 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512x18.

Figure 2- 33 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 only.

CYC

CKH

CKL

BKS

ENS

ENH

CLK

BLK

WEN

[R|W]ADDR

DIN|WD

DOUT|RD

BKH

tCYC

tCKH tCKL

A0A1A2

DI0DI1

tAS tAH

tBKS

tENS

tDS tDH

CLK

BLK

WEN

ADDR

DIN

tBKH

DOUT

(pass-through) DI1

DnDI0

DOUT

(pipelined) DI0DI1

DI2

SmartFusion DC and Switching Characteristics

2-68 Revision 7

Figure 2- 34 • RAM Reset. Applicable to both RAM4K9 and RAM512x18.

CLK

RESET

DOUT|RD D

CYC

CKH

CKL

RSTBQ

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-69

Timing Characteristics

Table 2-87 • RAM4K9

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tAS Address setup time 0.25 0.30 ns

tAH Address hold time 0.00 0.00 ns

tENS REN, WEN setup time 0.15 0.17 ns

tENH REN, WEN hold time 0.10 0.12 ns

tBKS BLK setup time 0.24 0.28 ns

tBKH BLK hold time 0.02 0.02 ns

tDS Input data (DIN) setup time 0.19 0.22 ns

tDH Input data (DIN) hold time 0.00 0.00 ns

tCKQ1 Clock High to new data valid on DOUT (output retained, WMODE = 0) 1.81 2.18 ns

Clock High to new data valid on DOUT (flow-through, WMODE = 1) 2.39 2.87 ns

tCKQ2 Clock High to new data valid on DOUT (pipelined) 0.91 1.09 ns

tC2CWWH Address collision clk-to-clk delay for reliable write after write on same

address—applicable to rising edge

0.30 0.35 ns

tC2CRWH Address collision clk-to-clk delay for reliable read access after write on same

address—applicable to opening edge

0.45 0.52 ns

tC2CWRH Address collision clk-to-clk delay for reliable write access after read on same

address— applicable to opening edge

0.49 0.57 ns

tRSTBQ RESET Low to data out Low on DOUT (flow-through) 0.94 1.12 ns

RESET Low to Data Out Low on DOUT (pipelined) 0.94 1.12 ns

tREMRSTB RESET removal 0.29 0.35 ns

tRECRSTB RESET recovery 1.52 1.83 ns

tMPWRSTB RESET minimum pulse width 0.22 0.22 ns

tCYC Clock cycle time 3.28 3.28 ns

FMAX Maximum clock frequency 305 305 MHz

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on

page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-70 Revision 7

Table 2-88 • RAM512X18

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tAS Address setup time 0.25 0.30 ns

tAH Address hold time 0.00 0.00 ns

tENS REN, WEN setup time 0.09 0.11 ns

tENH REN, WEN hold time 0.06 0.07 ns

tDS Input data (WD) setup time 0.19 0.22 ns

tDH Input data (WD) hold time 0.00 0.00 ns

tCKQ1 Clock High to new data valid on RD (output retained, WMODE = 0) 2.19 2.63 ns

tCKQ2 Clock High to new data valid on RD (pipelined) 0.91 1.09 ns

tC2CRWH Address collision clk-to-clk delay for reliable read access after write on same

address—applicable to opening edge

0.50 0.58 ns

tC2CWRH Address collision clk-to-clk delay for reliable write access after read on same

address—applicable to opening edge

0.59 0.67 ns

tRSTBQ RESET Low to data out Low on RD (flow-through) 0.94 1.12 ns

RESET Low to data out Low on RD (pipelined) 0.94 1.12 ns

tREMRSTB RESET removal 0.29 0.35 ns

tRECRSTB RESET recovery 1.52 1.83 ns

tMPWRSTB RESET minimum pulse width 0.22 0.22 ns

tCYC Clock cycle time 3.28 3.28 ns

FMAX Maximum clock frequency 305 305 MHz

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on

page 2-9 for derating values.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-71

FIFO

Figure 2- 35 • FIFO Model

FIFO4K18

RW2

RD17

RW1

RD16

RW0

WW2

WW1

WW0 RD0

ESTOP

FSTOP

FULL

AFULL

EMPTY

AFVAL11

AEMPTY

AFVAL10

AFVAL0

AEVAL11

AEVAL10

AEVAL0

REN

RBLK

RCLK

WEN

WBLK

WCLK

RPIPE

WD17

WD16

WD0

RESET

SmartFusion DC and Switching Characteristics

2-72 Revision 7

Timing Waveforms

Figure 2-36 • FIFO Reset

Figure 2-37 • FIFO EMPTY Flag and AEMPTY Flag Assertion

MATCH (A

)

MPWRSTB

RSTFG

RSTCK

RSTAF

RCLK/

WCLK

RESET

EMPTY

AEMPTY

WA/RA

(Address Counter)

RSTFG

RSTAF

FULL

AFULL

RCLK

NO MATCH NO MATCH Dist = AEF_TH MATCH (EMPTY)

tCKAF

tRCKEF

EMPTY

AEMPTY

tCYC

WA/RA

(Address Counter)

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-73

Figure 2-38 • FIFO FULL Flag and AFULL Flag Assertion

Figure 2-39 • FIFO EMPTY Flag and AEMPTY Flag Deassertion

Figure 2-40 • FIFO FULL Flag and AFULL Flag Deassertion

NO MATCH NO MATCH Dist = AFF_TH MATCH (FULL)

tCKAF

tWCKFF

tCYC

WCLK

FULL

AFULL

WA/RA

(Address Counter)

WCLK

WA/RA

(Address Counter) MATCH

(EMPTY) NO MATCH NO MATCH NO MATCH Dist = AEF_TH + 1

NO MATCH

RCLK

EMPTY

1st Rising

Edge

After 1st

Write

2nd Rising

Edge

After 1st

Write

tRCKEF

tCKAF

AEMPTY

Dist = AFF_TH – 1

MATCH (FULL) NO MATCH NO MATCH NO MATCH NO MATCH

WCKF

CKAF

1st Rising

Edge

After 1st

Read

1st Rising

Edge

After 2nd

Read

RCLK

WA/RA

(Address Counter)

WCLK

FULL

AFULL

SmartFusion DC and Switching Characteristics

2-74 Revision 7

Timing Characteristics

Embedded Nonvolatile Memory Block (eNVM)

Electrical Characteristics

Table 2-90 describes the eNVM maximum performance.

Table 2-89 • FIFO

Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V

Parameter Description –1 Std. Units

tENS REN, WEN Setup Time 1.40 1.68 ns

tENH REN, WEN Hold Time 0.02 0.02 ns

tBKS BLK Setup Time 0.19 0.19 ns

tBKH BLK Hold Time 0.00 0.00 ns

tDS Input Data (WD) Setup Time 0.19 0.22 ns

tDH Input Data (WD) Hold Time 0.00 0.00 ns

tCKQ1 Clock High to New Data Valid on RD (flow-through) 2.39 2.87 ns

tCKQ2 Clock High to New Data Valid on RD (pipelined) 0.91 1.09 ns

tRCKEF RCLK High to Empty Flag Valid 1.74 2.09 ns

tWCKFF WCLK High to Full Flag Valid 1.66 1.99 ns

tCKAF Clock HIGH to Almost Empty/Full Flag Valid 6.29 7.54 ns

tRSTFG RESET Low to Empty/Full Flag Valid 1.72 2.06 ns

tRSTAF RESET Low to Almost Empty/Full Flag Valid 6.22 7.47 ns

tRSTBQ RESET Low to Data Out Low on RD (flow-through) 0.94 1.12 ns

RESET Low to Data Out Low on RD (pipelined) 0.94 1.12 ns

tREMRSTB RESET Removal 0.29 0.35 ns

tRECRSTB RESET Recovery 1.52 1.83 ns

tMPWRSTB RESET Minimum Pulse Width 0.22 0.22 ns

tCYC Clock Cycle Time 3.28 3.28 ns

FMAX Maximum Frequency for FIFO 305 305 MHz

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V

Parameter Description

A2F060 A2F200 A2F500

Units–1 Std. –1 Std. –1 Std.

tFMAXCLKeNVM Maximum frequency for clock for the control logic – 5

cycles (5:1:1:1*)

80 80 80 80 50 50 MHz

tFMAXCLKeNVM Maximum frequency for clock for the control logic – 6

cycles (6:1:1:1*)

100 80 100 80 100 80 MHz

Note: *6:1:1:1 indicates 6 cycles for the first access and 1 each for the next three accesses. 5:1:1:1 indicates 5 cycles

for the first access and 1 each fo r the ne xt three accesses.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-75

Embedded FlashROM (eFROM)

Electrical Characteristics

Table 2-91 describes the eFROM maximum performance

JTAG 1532 Characteristics

JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to

the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O

Characteristics" section on page 2-19 for more details.

Timing Characteristics

Table 2-91 • FlashROM Access Time, Worse Commercial Case Cond itions: TJ = 85°C, VCC = 1.425 V

Parameter Description –1 Std. Units

tCK2Q Clock to out per configuration* 28.68 32.98 ns

Fmax Maximum Clock frequency 15.00 15.00 MHz

Table 2-92 • JTAG 1532

Worst Commercial-Case Conditions: TJ = 85°C, Wors t-Case VCC = 1.425 V

Parameter Description –1 Std. Units

tDISU Test Data Input Setup Time 0.67 0.77 ns

tDIHD Test Data Input Hold Time 1.33 1.53 ns

tTMSSU Test Mode Select Setup Time 0.67 0.77 ns

tTMDHD Test Mode Select Hold Time 1.33 1.53 ns

tTCK2Q Clock to Q (data out) 8.00 9.20 ns

tRSTB2Q Reset to Q (data out) 26.67 30.67 ns

FTCKMAX TCK Maximum Frequency 19.00 21.85 MHz

tTRSTREM ResetB Removal Time 0.00 0.00 ns

tTRSTREC ResetB Recovery Time 0.27 0.31 ns

tTRSTMPW ResetB Minimum Pulse TBD TBD ns

Note: For specific junction temperature and voltag e supply levels, refer to Table 2-7 on page 2-9 for derating values.

SmartFusion DC and Switching Characteristics

2-76 Revision 7

Programmable Analog Specifications

Current Monitor

Unless otherwise noted, current monitor performance is specified at 25°C with nominal power supply

voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit

mode and 91 Ksps, after digital compensation. All results are based on averaging over 16 samples.

Table 2-93 • Current Monitor Pe rformance Specification

Specification Test Conditions Min. Typical Max. Units

Input voltage range (for driving ADC

over full range)

0 – 48 0 – 50 1 – 51 mV

Analog gain From the differential voltage across the

input pads to the ADC input

50 V/V

Input referred offset voltage Input referred offset voltage 0 0.1 0.5 mV

–40ºC to +100ºC 0 0.1 0.5 mV

Gain error Slope of BFSL vs. 50 V/V ±0.1 ±0.5 % nom.

–40ºC to +100ºC ±0.5 % nom.

Overall Accuracy Peak error from ideal transfer function,

25°C

±(0.1 +

0.25%)

±(0.4 +

1.5%)

mV plus

reading

Input referred noise 0 VDC input (no output averaging) 0.3 0.4 0.5 mVrms

Common-mode rejection ratio 0 V to 12 VDC common-mode voltage –86 –87 dB

Analog settling time To 0.1% of final value (with ADC load)

From CM_STB (High) 5 µs

From ADC_START (High) 5 200 µs

Input capacitance 8pF

Input biased current CM[n] or TM[n] pad,

–40°C to +100°C over maximum input

voltage range (plus is into pad)

Strobe = 0; IBIAS on CM[n] 0 µA

Strobe = 1; IBIAS on CM[n] 1 µA

Strobe = 0; IBIAS on TM[n] 2 µA

Strobe = 1; IBIAS on TM[n] 1 µA

Power supply rejection ratio DC (0 – 10 KHz) 41 42 dB

Incremental operational current

monitor power supply current

requirements (per current monitor

instance, not including ADC or

VAREFx)

VCC33A 150 µA

VCC33AP 140 µA

VCC15A 50 µA

Note: Under no condition should the TM pad ever be greate r than 1 0 mV above than the CM pad.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-77

Temperature Monitor

Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected

bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages,

with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and

62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions

where the SmartFusion cSoC and the sensing diode are at the same temperature.

Table 2-94 • Temperature Monitor Performanc e Spe c ifications

Specification Test Conditions Min. Typical Max. Units

Input diode temperature range –55 150 °C

233.2 378.15 K

Temperature sensitivity 2.5 mV/K

Intercept Extrapolated to 0K 0 V

Input referred temperature offset

error

At 25°C (298.15K) ±1 1.5 °C

Gain error Slope of BFSL vs. 2.5 mV/K ±1 2.5 % nom.

Overall accuracy Peak error from ideal transfer function ±2 ±3 °C

Input referred noise At 25°C (298.15K) – no output averaging 4 °C rms

Output current Idle mode 100 µA

Final measurement phases 10 µA

Analog settling time Measured to 0.1% of final value, (with

ADC load)

From TM_STB (High) 5 µs

From ADC_START (High) 5 105 µs

AT parasitic capacitance 500 pF

Power supply rejection ratio DC (0–10 KHz) 1.2 0.7 °C/V

Input referred temperature

sensitivity error

Variation due to device temperature

(–40°C to +100°C). External temperature

sensor held constant.

0.005 0.008 °C/°C

Temperature monitor (TM)

operational power supply current

requirements (per temperature

monitor instance, not including ADC

or VAREFx)

VCC33A 200 µA

VCC33AP 150 µA

VCC15A 50 µA

Note: All results are based on averaging over 64 samples.

SmartFusion DC and Switching Characteristics

2-78 Revision 7

Figure 2-41 • Temperature Error Versus External Capacitance

-7

-6

-5

-4

-3

-2

-1

1.00E -06 1.00E -05 1.00E -04 1.00E -03 1.00E -02 1.00E -01 1.00E+00

Temperature Error (°C)

Capacitance (μF)

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-79

Analog-to-Digital Converter (ADC)

Unless otherwise noted, ADC direct input performance is specified at 25°C with nominal power supply

voltages, with the output measured using the external voltage reference with the internal ADC in 12-bit

mode and 500 KHz sampling frequency, after trimming and digital compensation.

Table 2-95 • ADC Specifications

Specification Test Con dition s Min. Typ. Max. Units

Input voltage range (for driving ADC

over its full range)

2.56 V

Gain error ±0.4 ±0.7 %

–40ºC to +100ºC ±0.4 ±0.7 %

Input referred offset voltage ±1 ±2 mV

–40ºC to +100ºC ±1 ±2

Integral non-linearity (INL) RMS deviation from BFSL

12-bit mode 1.71 LSB

10-bit mode 0.60 1.00 LSB

8-bit mode 0.2 0.33 LSB

Differential non-linearity (DNL) 12-bit mode 2.4 LSB

10-bit mode 0.80 0.94 LSB

8-bit mode 0.2 0.23 LSB

Signal to noise ratio 62 64 dB

Effective number of bits (ENOB)

EQ 10

–1 dBFS input

12-bit mode 10 KHz 9.9 10 Bits

12-bit mode 100 KHz 9.9 10 Bits

10-bit mode 10 KHz 9.5 9.6 Bits

10-bit mode 100 KHz 9.5 9.6 Bits

8-bit mode 10 KHz 7.8 7.9 Bits

8-bit mode 100 KHz 7.8 7.9 Bits

Full power bandwidth At –3 dB; –1 dBFS input 300 KHz

Analog settling time To 0.1% of final value (with 1 Kohm source

impedance and with ADC load)

2µs

Input capacitance Switched capacitance (ADC sample

capacitor)

12 15 pF

Cs: Static capacitance (Figure 2-42 on page 2-80)

CM[n] input 5 7 pF

TM[n] input 5 7 pF

ADC[n] input 5 7 pF

Input resistance Rin: Series resistance (Figure 2-42)2KΩ

Rsh: Shunt resistance, exclusive of

switched capacitance effects (Figure 2-42)

10 MΩ

Note: All 3.3 V supplies are tied tog ether and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant.

ENOB SINAD 1.76 dB–

6.02 dB/bit

---------------------------------------------

SmartFusion DC and Switching Characteristics

2-80 Revision 7

Input leakage current –40°C to +100°C 1 µA

Power supply rejection ratio DC 44 53 dB

ADC power supply operational current

requirements

VCC33ADCx 2.5 mA

VCC15A 2 mA

Figure 2-42 • ADC Input Model

Table 2-96 • VAREF Stabilization Time

VAREF Capacitor Value (µF) Required Settling Ti me for 8-Bit and

10-Bit Mode (ms) Required Settling Time for 12-Bit

Mode (ms)

0.01 1 1

0.1 3 4

0.2 6 8

0.3 10 11

0.5 17 20

0.7 18 21

132 37

2.2 62 73

3.3 99 117

10 275 325

22 635 751

47 1318 1557

Table 2-95 • ADC Specifications (continued)

Specification Test Conditions Min. Typ. Max. Units

Note: All 3.3 V supplies are tied tog ether and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant.

Rin

RshCswCst

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-81

Analog Bipolar Prescaler (ABPS)

With the ABPS set to its high range setting (GDEC = 00), a hypothetical input voltage in the range –15.36

V to +15.36 V is scaled and offset by the ABPS input amplifier to match the ADC full range of 0 V to 2.56

V using a nominal gain of –0.08333 V/V. However, due to reliability considerations, the voltage applied to

the ABPS input should never be outside the range of –11.5 V to +14.4 V, restricting the usable ADC input

voltage to 2.238 V to 0.080 V and the corresponding 12-bit output codes to the range of 3581 to 128

(decimal), respectively.

Unless otherwise noted, ABPS performance is specified at 25°C with nominal power supply voltages,

with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and

100 KHz sampling frequency, after trimming and digital compensation; and applies to all ranges.

Table 2-97 • ABPS Performance Specifications

Specification Test Conditions Min. Typ. Max. Units

Input voltage range (for driving ADC

over its full range)

GDEC[1:0] = 11 ±2.56 V

GDEC[1:0] = 10 ±5.12 V

GDEC[1:0] = 01 ±10.24 V

GDEC[1:0] = 00 (limited by

maximum rating)

See note 1 V

Analog gain (from input pad to ADC

input)

GDEC[1:0] = 11 –0.5 V/V

GDEC[1:0] = 10 –0.25 V/V

GDEC[1:0] = 01 –0.125 V/V

GDEC[1:0] = 00 –0.0833 V/V

Gain error –2.8 –0.4 0.7 %

–40ºC to +100ºC –2.8 –0.4 0.7 %

Input referred offset voltage

GDEC[1:0] = 11 –0.31 –0.07 0.31 % FR

–40ºC to +100ºC –1.00 1.47 % FR

GDEC[1:0] = 10 –0.34 –0.07 0.34 % FR

–40ºC to +100ºC –0.90 1.37 % FR

GDEC[1:0] = 01 –0.61 –0.07 0.35 % FR

–40ºC to +100ºC –1.05 1.35 % FR

GDEC[1:0] = 00 –0.39 –0.07 0.35 % FR

–40ºC to +100ºC –1.06 1.38 % FR

SINAD 53 56 dB

Non-linearity RMS deviation from BFSL 0.5 % FR

Effective number of bits (ENOB)

EQ 11

GDEC[1:0] = 11

(±2.56 range), –1 dBFS input

12-bit mode 10 KHz 8.6 9.1 Bits

12-bit mode 100 KHz 8.6 9.1 Bits

10-bit mode 10 KHz 8.5 8.9 Bits

10-bit mode 100 KHz 8.5 8.9 Bits

8-bit mode 10 KHz 7.7 7.8 Bits

8-bit mode 100 KHz 7.7 7.8 Bits

Large-signal bandwidth –1 dBFS input 1 MHz

ENOB SINAD 1.76 dB–

6.02 dB/bit

---------------------------------------------

SmartFusion DC and Switching Characteristics

2-82 Revision 7

Analog settling time To 0.1% of final value (with ADC

load)

10 µs

Input resistance 1MΩ

Power supply rejection ratio DC (0–1 KHz) 38 40 dB

ABPS power supply current

requirements (not including ADC or

VAREFx)

ABPS_EN = 1 (operational mode)

VCC33A 123 134 µA

VCC33AP 89 94 µA

VCC15A 1 µA

Table 2-97 • ABPS Performance Specifications (continued)

Specification Test Conditions Min. Typ. Max. Units

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-83

Comparator

Unless otherwise specified, performance is specified at 25°C with nominal power supply voltages.

Table 2-98 • Comparator Performance Specificatio ns

Specification Test Conditions Min. Typ. Max. Units

Input voltage range Minimum 0 V

Maximum 2.56 V

Input offset voltage HYS[1:0] = 00

(no hysteresis)

±1 ±3 mV

Input bias current Comparator 1, 3, 5, 7, 9 (measured at 2.56 V) 40 60 nA

Comparator 0, 2, 4, 6, 8 (measured at 2.56 V) 150 300 nA

Input resistance 10 MΩ

Power supply rejection ratio DC (0 – 10 KHz) 50 60 dB

Propagation delay 100 mV overdrive

HYS[1:0] = 00

(no hysteresis) 15 18 ns

100 mV overdrive

HYS[1:0] = 10

(with hysteresis) 25 30 ns

Hysteresis

(± refers to rising and falling

threshold shifts, respectively)

HYS[1:0] = 00 Typical (25°C) 0 0 ±5 mV

Across all corners (–40ºC to +100ºC) 0 ±5 mV

HYS[1:0] = 01 Typical (25°C) ±3 ± 16 ±30 mV

Across all corners (–40ºC to +100ºC) 0 ±36 mV

HYS[1:0] = 10 Typical (25°C) ±19 ± 31 ±48 mV

Across all corners (–40ºC to +100ºC) ±12 ±54 mV

HYS[1:0] = 11 Typical (25°C) ±80 ± 105 ±190 mV

Across all corners (–40ºC to +100ºC) ±80 ±194 mV

Comparator current

requirements

(per comparator)

VCC33A = 3.3 V (operational mode); COMP_EN = 1

VCC33A 150 165 µA

VCC33AP 140 165 µA

VCC15A 1 3 µA

SmartFusion DC and Switching Characteristics

2-84 Revision 7

Analog Sigma-Delta Digital to Analog Converter (DAC)

Unless otherwise noted, sigma-delta DAC performance is specified at 25°C with nominal power supply

voltages, using the internal sigma-delta modulators with 16-bit inputs, HCLK = 100 MHz, modulator

inputs updated at a 100 KHz rate, in voltage output mode with an external 160 pF capacitor to ground,

after trimming and digital [pre-]compensation.

Table 2-99 • Analog Sigma-Delta DAC

Specification Test Conditions Min. Typ. Max. Units

Resolution 8 24 Bits

Output range 0 to 2.56 V

Current output mode 0 to 256 µA

Output Impedance 6 10 12 KΩ

Current output mode 10 MΩ

Output voltage compliance Current output mode 0–3.0 V

–40ºC to +100ºC 0–2.7 0–3.4 V

Gain error Voltage output mode 0.3 ±2 %

A2F060: –40ºC to +100ºC 0.3 ±2 %

A2F200: –40ºC to +100ºC 1.2 ±5.3 %

A2F500: –40ºC to +100ºC 0.3 ±2 %

Current output mode 0.3 ±2 %

A2F060: –40ºC to +100ºC 0.3 ±2 %

A2F200: –40ºC to +100ºC 1.2 ±5.3 %

A2F500: –40ºC to +100ºC 0.3 ±2 %

Output referred offset DACBYTE0 = h’00 (8-bit) 0.25 ±1 mV

–40ºC to +100ºC 1 ±2.5 mV

Current output mode 0.3 ±1 µA

–40ºC to +100ºC 1 ±2.5 µA

Integral non-linearity RMS deviation from BFSL 0.1 0.3 % FR

Differential non-linearity 0.05 0.4 % FR

Analog settling time Refer to

Figure 2-43 on

page 2-85

µs

Power supply rejection ratio DC, full scale output 33 34 dB

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-85

Sigma-delta DAC power supply current

requirements (not including VAREFx)

Input = 0, EN = 1

(operational mode)

VCC33SDDx 30 35 µA

VCC15A 3 5 µA

Input = Half scale, EN = 1

(operational mode)

VCC33SDDx 160 165 µA

VCC15A 33 35 µA

Input = Full scale, EN = 1

(operational mode)

VCC33SDDx 280 285 µA

VCC15A 70 75 µA

Figure 2-43 • Sigma-Delta DAC Setting Time

Table 2-99 • Analog Sigma-Delta DAC (continued)

Specification Test Conditions Min. Typ. Max. Units

0123 4 56 78910324864128255

100

120

140

160

180

200

220

Settling T ime (us)

Input Code

Sigma Delta DAC Settling Time

SmartFusion DC and Switching Characteristics

2-86 Revision 7

Voltage Regulator

Table 2-100 • Voltage Regul ator

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VOUT Output voltage TJ = 25°C 1.425 1.5 1.575 V

VOS Output offset voltage TJ = 25°C 11 mV

ICC33A Operation current TJ = 25°C ILOAD = 1 mA 3.4 mA

ILOAD = 100 mA 11 mA

ILOAD = 0.5 A 21 mA

ΔVOUT Load regulation TJ = 25°C ILOAD = 1 mA to 0.5 A 5.8 mV

ΔVOUT Line regulation TJ = 25°C VCC33A = 2.97 V to 3.63 V

ILOAD = 1 mA

5.3 mV/V

VCC33A = 2.97 V to 3.63 V

ILOAD= 100 mA

5.3 mV/V

VCC33A = 2.97 V to 3.63 V

ILOAD = 500mA

5.3 mV/V

Dropout voltage1 T

J = 25°C ILOAD = 1 mA 0.63 V

ILOAD = 100 mA 0.84 V

ILOAD = 0.5 A 1.35 V

IPTBASE PTBase current TJ = 25°C ILOAD = 1 mA 48 µA

ILOAD = 100 mA 736 µA

ILOAD = 0.5 A 12 mA

Startup time2TJ = 25°C 200 ms

Notes:

1. Dropout voltage is defined as the minimum VCC33A voltage. The parameter is specified with respect to the output

voltage. The specification represents the minimum input-to-output differe ntial voltage required to maintain regulation.

2. Assumes 10 µF.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-87

Figure 2- 44 • Typical Output Voltage

Figure 2- 45 • Load Regulation

Load = 10 mA

Load = 100 mA

Load = 500 mA

-0.025

-0.02

-0.015

-0.01

-0.005

0.005

0.01

0.015

-40-20 0 20406080100

Offset Voltage (V)

Temperature (°C)

Typical Output Voltage

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

-40 -20 0 20 40 60 80 100

Change in Output Voltage with Load (mV)

Temperature (°C)

Load Regulation

SmartFusion DC and Switching Characteristics

2-88 Revision 7

Serial Peripheral Interface (SPI) Characteristics

This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output

characteristics given for a 35 pF load on the pins and all sequential timing characteristics are related to

SPI_x_CLK. For timing parameter definitions, refer to Figure 2-46 on page 2-89.

Table 2-101 • SPI Characteristics

Commercial Case Conditions: TJ= 85ºC, VDD = 1.425 V, –1 Sp eed Grade

Symbol Description and Condition A2F060 A2F200 A2F500 Unit

sp1 SPI_x_CLK minimum period

SPI_x_CLK = PCLK/2 20 NA 20 ns

SPI_x_CLK = PCLK/4 40 40 40 ns

SPI_x_CLK = PCLK/8 80 80 80 ns

SPI_x_CLK = PCLK/16 0.16 0.16 0.16 µs

SPI_x_CLK = PCLK/32 0.32 0.32 0.32 µs

SPI_x_CLK = PCLK/64 0.64 0.64 0.64 µs

SPI_x_CLK = PCLK/128 1.28 1.28 1.28 µs

SPI_x_CLK = PCLK/256 2.56 2.56 2.56 µs

sp2 SPI_x_CLK minimum pulse width high

SPI_x_CLK = PCLK/2 10 NA 10 ns

SPI_x_CLK = PCLK/4 20 20 20 ns

SPI_x_CLK = PCLK/8 40 40 40 ns

SPI_x_CLK = PCLK/16 0.08 0.08 0.08 µs

SPI_x_CLK = PCLK/32 0.16 0.16 0.16 µs

SPI_x_CLK = PCLK/64 0.32 0.32 0.32 µs

SPI_x_CLK = PCLK/128 0.64 0.64 0.64 µs

SPI_x_CLK = PCLK/256 1.28 1.28 1.28 us

sp3 SPI_x_CLK minimum pulse width low

SPI_x_CLK = PCLK/2 10 NA 10 ns

SPI_x_CLK = PCLK/4 20 20 20 ns

SPI_x_CLK = PCLK/8 40 40 40 ns

SPI_x_CLK = PCLK/16 0.08 0.08 0.08 µs

SPI_x_CLK = PCLK/32 0.16 0.16 0.16 µs

SPI_x_CLK = PCLK/64 0.32 0.32 0.32 µs

SPI_x_CLK = PCLK/128 0.64 0.64 0.64 µs

SPI_x_CLK = PCLK/256 1.28 1.28 1.28 µs

sp4 SPI_x_CLK, SPI_x_DO, SPI_x_SS rise time (10%-90%) 14.7 4.7 4.7 ns

sp5 SPI_x_CLK, SPI_x_DO, SPI_x_SS fall time (10%-90%) 13.4 3.4 3.4 ns

Notes:

1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances,

use the corresponding IBIS models located on the Microsemi SoC Prod ucts Group website:

http://www.actel.com/download/ibis/default.aspx.

2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion

Microcontroller Subsystem User’s Guide.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-89

sp6 Data from master (SPI_x_DO) setup time 21 1 1 pclk cycles

sp7 Data from master (SPI_x_DO) hold time 21 1 1 pclk cycles

sp8 SPI_x_DI setup time 21 1 1 pclk cycles

sp9 SPI_x_DI hold time 21 1 1 pclk cycles

Figure 2-46 • SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1)

Table 2-101 • SPI Characteristics

Commercial Case Conditions: TJ= 85ºC, VDD = 1.425 V, –1 Sp eed Grade (continued)

Symbol Description and Condition A2F060 A2F200 A2F500 Unit

Notes:

1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances,

use the corresponding IBIS models located on the Microsemi SoC Prod ucts Group website:

http://www.actel.com/download/ibis/default.aspx.

2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion

Microcontroller Subsystem User’s Guide.

SPI_x_CLK

SPO = 0

SPI_x_DO

SP6 SP7

50%50%

MSB

50% 50% 50%

SP2

SP1

90%

10% 10%

SP4 SP5

SP8 SP9

50%

50% MSB

SPI_x_DI

10%

90%

SP5

90%

10%

SP4

90%

10%10%

SP4SP5

90%

SPI_x_SS

SPI_x_CLK

SPO = 1

SP3

SmartFusion DC and Switching Characteristics

2-90 Revision 7

Inter-Integrated Circuit (I2C) Characteristics

This section describes the DC and switching of the I2C interface. Unless otherwise noted, all output

characteristics given are for a 100 pF load on the pins. For timing parameter definitions, refer to Figure 2-

47 on page 2-91.

Table 2-102 • I2C Characteristics

Commercial Case Conditions: TJ= 85ºC, VDD = 1.425 V, –1 Speed Gr ade

Parameter Definition Condition Value Unit

VIL Minimum input low voltage – SeeTable 2-36 on

page 2-30

–

Maximum input low voltage – See Tab le 2- 36 –

VIH Minimum input high voltage – See Ta b le 2- 36 –

Maximum input high voltage – See Ta b le 2- 36 –

VOL Maximum output voltage low IOL =8mA See Tab le 2-3 6 –

IIL Input current high – See Tab le 2- 36 –

IIH Input current low – See Tab l e 2-3 6 –

Vhyst Hysteresis of Schmitt trigger

inputs

– See Table 2-33 on

page 2-29

TFALL Fall time 2VIHmin to VILMax, Cload = 400 pF 15.0 ns

VIHmin to VILMax, Cload = 100 pF 4.0 ns

TRISE Rise time 2VILMax to VIHmin, Cload = 400pF 19.5 ns

VILMax to VIHmin, Cload = 100pF 5.2 ns

Cin Pin capacitance VIN = 0, f = 1.0 MHz 8.0 pF

Rpull-up Output buffer maximum pull-

down Resistance 1

–50Ω

Rpull-down Output buffer maximum pull-up

Resistance 1

– 150 Ω

Dmax Maximum data rate Fast mode 400 Kbps

tLOW Low period of I2C_x_SCL 3– 1 pclk cycles

tHIGH High period of I2C_x_SCL 3– 1 pclk cycles

tHD;STA START hold time 3– 1 pclk cycles

tSU;STA START setup time 3– 1 pclk cycles

tHD;DAT DATA hold time 3– 1 pclk cycles

tSU;DAT DATA setup time 3– 1 pclk cycles

Notes:

1. These maximum values are provided for information only. Minimum output buffer resistance values depend on

VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output

buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at

http://www.actel.com/download/ibis/default.aspx.

2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located on the SoC Products Group website at

http://www.actel.com/download/ibis/default.aspx.

3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion

Microcontroller Subsystem User’s Guide.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 2-91

tSU;STO STOP setup time 3– 1 pclk cycles

tFILT Maximum spike width filtered – 50 ns

Figure 2-47 • I2C Timing Parameter Definition

Table 2-102 • I2C Characteristics

Commercial Case Conditions: TJ= 85ºC, VDD = 1.425 V, –1 Speed Grade (continued)

Parameter Definition Condition Value Unit

Notes:

1. These maximum values are provided for information only. Minimum output buffer resistance values depend on

VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output

buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at

http://www.actel.com/download/ibis/default.aspx.

2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located on the SoC Products Group website at

http://www.actel.com/download/ibis/default.aspx.

3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion

Microcontroller Subsystem User’s Guide.

SCL

TRISE TFALL

tLOW

tHD;STA

SDA

tHIGH

tHD;DAT tSU;DAT

tSU;STO

tSU;STA S

Revision 7 3-1

3 – SmartFusion Development Tools

Designing with SmartFusion cSoCs involves three different types of design: FPGA design, embedded

design and analog design. These roles can be filled by three different designers, two designers or even a

single designer, depending on company structure and project complexity.

Types of Design Tools

Microsemi has developed design tools and flows to meet the needs of these three types of designers so

they can work together smoothly on a single project (Figure 3-1).

FPGA Design

Libero Integrated Design Environment (IDE) is Microsemi’s comprehensive software toolset for designing

with all Microsemi FPGAs and cSoCs. Libero IDE includes industry-leading synthesis, simulation and

debug tools from Synopsys® and Mentor Graphics®, as well as innovative timing and power optimization

and analysis.

Figure 3- 1 • Three Design Roles

FPGA Design Embedded Design

Software IDE

(SoftConsole, Keil, IAR)

MSS Configurator

MSS Configuration – Analog Configuration

Hardware Interfaces

FlashPro4, ULINK, J-LINK

Design Entry and IP Libraries

Simulation and Synthesis

Compile and Layout

Timing and Power Analysis

Hardware Debug

Drivers and Sample Projects

Application Development

Build Project

Simulation

Software Debug

SmartFusion Development Tools

3-2 Revision 7

Embedded Design

Microsemi offers FREE SoftConsole Eclipse based IDE, which includes the GNU C/C++ compiler and

GDB debugger. Microsemi also offers evaluation versions of software from Keil and IAR, with full

versions available from respective suppliers.

Analog Design

The MSS configurator provides graphical configuration for current, voltage and temperature monitors,

sample sequencing setup and post-processing configuration, as well as DAC output.

The MSS configurator creates a bridge between the FPGA fabric and embedded designers so device

configuration can be easily shared between multiple developers.

The MSS configurator includes the following:

• A simple configurator for the embedded designer to control the MSS peripherals and I/Os

• A method to import and view a hardware configuration from the FPGA flow into the embedded

flow containing the memory map

• Automatic generation of drivers for any peripherals or soft IP used in the system configuration

• Comprehensive analog configuration for the programmable analog components

• Creation of a standard MSS block to be used in SmartDesign for connection of FPGA fabric

designs and IP

Figure 3- 2 • MSS Configurator

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 3-3

SmartFusion Ecosystem

The Microsemi SoC Products Group (formerly Actel) has a long history of supplying comprehensive

FPGA development tools and recognizes the benefit of partnering with industry leaders to deliver the

optimum usability and productivity to customers. Taking the same approach with processor development,

Microsemi has partnered with key industry leaders in the microcontroller space to provide the robust

SmartFusion ecosystem.

Microsemi is partnering with Keil and IAR to provide Software IDE support to SmartFusion system

designers. The result is a robust solution that can be easily adopted by developers who are already doing

embedded design. The learning path is straightforward for FPGA designers.

Support for the SoC Products Group device and ecosystem resources is represented in Figure 3-3.

Figure 3-3 shows the SmartFusion stack with examples of drivers, RTOS, and middleware from

Microsemi and partners. By leveraging the SmartFusion stack, designers can decide at which level to

add their own customization to their design, thus speeding time to market and reducing overhead in the

design.

ARM

Because an ARM processor was chosen for SmartFusion cSoCs, Microsemi's customers can benefit

from the extensive ARM ecosystem. By building on Microsemi supplied hardware abstraction layer (HAL)

and drivers, third party vendors can easily port RTOS and middleware for the SmartFusion cSoC.

• ARM Cortex-M Series Processors

• ARM Cortex-M3 Processor Resource

•ARM Cortex-M3 Technical Reference Manual

•ARM Cortex-M3 Processor Software Development for ARM7TDMI Processor Programmers

White Paper

Figure 3- 3 • SmartFusion Ecosystem

SPI

UART

Ethernet

Timer

eNVM

Customer Secret Sauce

TCP/IP, HTTP, SMTP, DHCP, LCD

µC/OS-III, RTX, Unison, FreeRTOS

Microsemi CMSIS-based HAL

Application Code

Hardware

Abstraction

Layer

Middleware

OS/RTOS

Drivers

SmartFusion Development Tools

3-4 Revision 7

Compile and Debug

Microsemi's SoftConsole is a free Eclipse-based IDE that enables the rapid production of C and C++

executables for Microsemi FPGA and cSoCs using Cortex-M3, Cortex-M1 and Core8051s. For

SmartFusion support, SoftConsole includes the GNU C/C++ compiler and GDB debugger. Additional

examples can be found on the SoftConsole page:

•Using UART with SmartFusion: SoftConsole Standalone Flow Tutorial

–Design Files

•Displaying POT Level with LEDs: Libero IDE and SoftConsole Flow Tutorial for SmartFusion

–Design Files

IAR Embedded Workbench® for ARM/Cortex is an integrated development environment for building and

debugging embedded ARM applications using assembler, C and C++. It includes a project manager,

editor, build and debugger tools with support for RTOS-aware debugging on hardware or in a simulator.

• Designing SmartFusion cSoC with IAR Systems

•IAR Embedded Workbench IDE User Guide for ARM

•Download Evaluation or Kickstart version of IAR Embedded Workbench for ARM

Keil's Microcontroller Development Kit comes in two editions: MDK-ARM and MDK Basic. Both editions

feature µVision®, the ARM Compiler, MicroLib, and RTX, but the MDK Basic edition is limited to 256K so

that small applications are more affordable.

•Designing SmartFusion cSoC with Keil

•Using Keil µVision and Microsemi SmartFusion cSoC

– Programming file for use with this tutorial

•Keil Microcontroller Development Kit for ARM Product Manuals

•Download Evaluation version of Keil MDK-ARM

Operating Systems

FreeRTOS™ is a portable, open source, royalty free, mini real-time kernel (a free-to-download and free-

to-deploy RTOS that can be used in commercial applications without any requirement to expose your

proprietary source code). FreeRTOS is scalable and designed specifically for small embedded systems.

This FreeRTOS version ported by Microsemi is 6.0.1. For more information, visit the FreeRTOS website:

www.freertos.org

•SmartFusion Webserver Demo Using uIP and FreeRTOS

• SmartFusion cSoC: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note

Software IDE SoftConsole Vision IDE Embedded Workbench

Website www.actel.com www.keil.com www.iar.com

Free versions from SoC

Products Group Free with Libero IDE 32 K code limited 32 K code limited

Available from Vendor N/A Full version Full version

Compiler GNU GCC RealView C/C++ IAR ARM Compiler

Debugger GDB debug Vision Debugger C-SPY Debugger

Instruction Set Simulator No Vision Simulator Yes

Debug Hardware FlashPro4 ULINK2 or ULINK-ME J-LINK or J-LINK Lite

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 3-5

Emcraft Systems provides porting of the open-source U-boot firmware and uClinux™ kernel to the

SmartFusion cSoC, a Linux®-based cross-development framework, and other complementary

components. Combined with the release of its A2F-Linux Evaluation Kit, this provides a low-cost platform

for evaluation and development of Linux (uClinux) on the Cortex-M3 CPU core of the Microsemi

SmartFusion cSoC.

• Emcraft Linux on Microsemi's SmartFusion cSoC

Keil offers the RTX Real-Time Kernel as a royalty-free, deterministic RTOS designed for ARM and

Cortex-M devices. It allows you to create programs that simultaneously perform multiple functions and

helps to create applications which are better structured and more easily maintained.

• The RTX Real-Time Kernel is included with MDK-ARM. Download the Evaluation version of Keil

MDK-ARM.

• RTX source code is available as part of Keil/ARM Real-Time Library (RL-ARM), a group of tightly-

coupled libraries designed to solve the real-time and communication challenges of embedded

systems based on ARM-powered microcontroller devices. The RL-ARM library now supports

SmartFusion cSoCs and designers with additional key features listed in the "Middleware" section

on page 3-5.

Micrium supports SmartFusion cSoCs with the company's flagship µC/OS family, recognized for a variety

of features and benefits, including unparalleled reliability, performance, dependability, impeccable source

code and vast documentation. Micrium supports the following products for SmartFusion cSoCs and

continues to work with Microsemi on additional projects.

• SmartFusion Quickstart Guide for Micrium µC/OS-III Examples

– Design Files

µC/OS-III™, Micrium's newest RTOS, is designed to save time on your next embedded project and puts

greater control of the software in your hands.

RoweBots provides an ultra tiny Linux-compatible RTOS called Unison for SmartFusion. Unison consists

of a set of modular software components, which, like Linux, are either free or commercially licensed.

Unison offers POSIX® and Linux compatibility with hard real-time performance, complete I/O modules

and an easily understood environment for device driver programming. Seamless integration with FPGA

and analog features are fast and easy.

•Unison V4-based products include a free Unison V4 Linux and POSIX-compatible kernel with

serial I/O, file system, six demonstration programs, upgraded documentation and source code for

Unison V4, and free (for non-commercial use) Unison V4 TCP/IP server. Commercial license

upgrade is available for Unison V4 TCP/IP server with three demonstration programs, DHCP

client and source code.

•Unison V5-based products include commercial Unison V5 Linux- and POSIX-compatible kernel

with serial I/O, file system, extensive feature set, full documentation, source code and more than

20 demonstration programs, Unison V5 TCP/IPv4 with extended feature set, sockets interface,

multiple network interfaces, PPP support, DHCP client, documentation, source code and six

demonstration programs, and multiple other features.

Middleware

Microsemi has ported both uIP and IwIP for Ethernet support as well as including TFTP file service.

• SmartFusion Webserver Demo Using uIP and FreeRTOS

•SmartFusion: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note

The Keil/ARM Real-Time Library (RL-ARM)1, in addition to RTX source, includes the following:

• RL-TCPnet (TCP/IP) – The Keil RL-TCPnet library, supporting full TCP/IP and UDP protocols, is a

full networking suite specifically written for small ARM and Cortex-M processor-based

microcontrollers. TCPnet is now ported to and supports SmartFusion Cortex-M3. It is highly

optimized, has a small code footprint, and gives excellent performance, providing a wide range of

application level protocols and examples such as FTP, SNMP, SOAP and AJAX. An HTTP server

example of TCPnet working in a SmartFusion design is available.

1. The CAN and USB functions within RL-ARM are not supported for SmartFusion cSoC.

SmartFusion Development Tools

3-6 Revision 7

• Flash File System (RL-Flash) allows your embedded applications to create, save, read, and

modify files in standard storage devices such as ROM, RAM, or FlashROM, using a standard

serial peripheral interface (SPI). Many ARM-based microcontrollers have a practical requirement

for a standard file system. With RL-FlashFS you can implement new features in embedded

applications such as data logging, storing program state during standby modes, or storing

firmware upgrades.

Micrium, in addition to µC/OS-III®, offers the following support for SmartFusion cSoC:

• µC/TCP-IP™ is a compact, reliable, and high-performance stack built from the ground up by

Micrium and has the quality, scalability, and reliability that translates into a rapid configuration of

network options, remarkable ease-of-use, and rapid time-to-market.

• µC/Probe™ is one of the most useful tools in embedded systems design and puts you in the

driver's seat, allowing you to take charge of virtually any variable, memory location, and I/O port in

your embedded product, while your system is running.

Revision 7 4-7

4 – SmartFusion Programming

SmartFusion cSoCs have three separate flash areas that can be programmed:

1. The FPGA fabric

2. The embedded nonvolatile memories (eNVMs)

3. The embedded flash ROM (eFROM)

There are essentially three methodologies for programming these areas:

1. In-system programming (ISP)

2. In-application programming (IAP)—only the FPGA fabric and the eNVM

3. Pre-programming (non-ISP)

Programming, whether ISP or IAP methodologies are employed, can be done in two ways:

1. Securely using the on chip AES decryption logic

2. In plain text

In-System Programming

In-System Programming is performed with the aid of external JTAG programming hardware. Table 4-1

describes the JTAG programming hardware that will program a SmartFusion cSoC and Table 4-2 defines

the JTAG pins that provide the interface for the programming hardware.

Table 4-1 • Supported JTAG Programming Hardware

Dongle Source JTAG SWD1SWV2Program

FPGA Program

eFROM Program

eNVM

FlashPro3/4 SoC

Products

Group

Yes No No Yes Yes Yes

ULINK Pro Keil Yes Yes Yes Yes3Ye s 3Yes

ULINK2 Keil Yes Yes Yes Yes3Yes3Yes

IAR J-Link IAR Yes Yes Yes Yes3Yes3Yes

Notes:

1. SWD = ARM Serial Wire Debug

2. SWV = ARM Serial Wire Viewer

3. Planned support

Table 4-2 • JTAG Pin Descriptions

Pin Name Description

JTAGSEL ARM Cortex-M3 or FPGA test access port (TAP) controller selection

TRSTB Test reset bar

TCK Test clock

TMS Test mode select

TDI Test data input

TDO Test data output

SmartFusion Programming

4-8 Revision 7

The JTAGSEL pin selects the FPGA TAP controller or the Cortex-M3 debug logic. When JTAGSEL is

asserted, the FPGA TAP controller is selected and the TRSTB input into the Cortex-M3 is held in a reset

state (logic 0), as depicted in Figure 4-1. Users should tie the JTAGSEL pin high externally.

Microsemi’s free Eclipse-based IDE, SoftConsole, has the ability to control the JTAGSEL pin directly with

the FlashPro4 programmer. Manual jumpers are provided on the evaluation and development kits to

allow manual selection of this function for the J-Link and ULINK debuggers.

Note: Standard ARM JTAG connectors do not have access to the JTAGSEL pin. SoftConsole

automatically selects the appropriate TAP controller using the CTXSELECT JTAG command.

When using SoftConsole, the state of JTAGSEL is a "don't care."

In-Application Programming

In-application programming refers to the ability to reprogram the various flash areas under direct

supervision of the Cortex-M3.

Reprogramming the FPGA Fabric Using the Cortex-M3

In this mode, the Cortex-M3 is executing the programming algorithm on-chip. The IAP driver can be

incorporated into the design project and executed from eNVM or eSRAM. The SoC Products Group

provides working example projects for SoftConsole, IAR, and Keil development environments. These

can be downloaded via the SoC Products Group Firmware Catalog. The new bitstream to be

programmed into the FPGA can reside on the user’s printed circuit board (PCB) in a separate SPI flash

memory. Alternately, the user can modify the existing projects supplied by the SoC Products Group and,

via custom handshaking software, throttle the download of the new image and program the FPGA a

piece at a time in real time. A cost-effective and reliable approach would be to store the bitstream in an

external SPI flash. Another option is storing a redundant bitstream image in an external SPI flash and

loading the newest version into the FPGA only when receiving an IAP command. Since the FPGA I/Os

are tristated or held at predefined or last known state during FPGA programming, the user must use MSS

I/Os to interface to external memories. Since there are two SPI controllers in the MSS, the user can

dedicate one to an SPI flash and the other to the particulars of an application. The amount of flash

memory required to program the FPGA always exceeds the size of the eNVM block that is on-chip. The

external memory controller (EMC) cannot be used as an interface to a memory device for storage of a

bitstream because its I/O pads are FPGA I/Os; hence they are tristated when the FPGA is in a

programming state.

Figure 4- 1 • TRSTB Logic

JTAG_SEL

TRSTB

Cortex-M3

TAP

Controller

FPGA

Programming Control

FPGA TAP

Controller

TRSTB

VJTAG (1.5 V to 3.3. V nominal)

SmartFusion Customizable System-on-a-Chip (cSoC)

Revision 7 4-9

Re-Programming the eNVM Blocks Using the Cortex-M3

In this mode the Cortex-M3 is executing the eNVM programming algorithm from eSRAM. Since individual

pages (132 bytes) of the eNVM can be write-protected, the programming algorithm software can be

protected from inadvertent erasure. When reprogramming the eNVM, both MSS I/Os and FPGA I/Os are

available as interfaces for sourcing the new eNVM image. The SoC Products Group provides working

example projects for SoftConsole, IAR, and Keil development environments. These can be downloaded

via the SoC Products Group Firmware Catalog.

Alternately, the eNVM can be reprogrammed by the Cortex-M3 via the IAP driver. This is necessary when

using an encrypted image.

Secure Programming

For background, refer to the "Security in Low Power Flash Devices" chapter of the Fusion FPGA Fabric

User ’s Guide on the SoC Products Group website. SmartFusion ISP behaves identically to Fusion ISP.

IAP of SmartFusion cSoCs is accomplished by using the IAP driver. Only the FPGA fabric and the eNVM

can be reprogrammed with the protection of security measures by using the IAP driver.

Typical Programming and Erase Times

Table 4-3 documents the typical programming and erase times for two components of SmartFusion

cSoCs, FPGA fabric and eNVM, using the SoC Products Group’s FlashPro hardware and software.

These times will be different for other ISP and IAP methods. The Program action in FlashPro software

includes erase, program, and verify to complete.

The typical programming (including erase) time per page of the eNVM is 8 ms.

References

User’s Guides

DirectC User’s Guide

http://www.actel.com/documents/DirectC_UG.pdf

Fusion FGPA Fabric User’s Guide

http://www.actel.com/documents/Fusion_UG.pdf

Chapters:

"In-System Programming (ISP) of Actel’s Low-Power Flash Devices Using FlashPro4/3/3X"

"Security in Low Power Flash Devices"

"Programming Flash Devices"

"Microprocessor Programming of Actel’s Low-Power Flash Devices"

Table 4-3 • Typical Programming and Erase Times

FPGA Fabric (seconds) eNVM (seconds)

A2F200 A2F500 A2F200 A2F500

Erase 21 21 N/A N/A

Program 8 15 18 26

Verify 9 16 26 42

Revision 7 5-1

SmartFusion Customizable System-on-Chip (cSoC)

5 – Pin Descriptions

Supply Pins

Name Type Description

GND Ground Digital ground to the FPGA fabric, microcontroller subsystem and GPIOs

GND15ADC0 Ground Quiet analog ground to the 1.5 V circuitry of the first analog-to-digital converter (ADC)

GND15ADC1 Ground Quiet analog ground to the 1.5 V circuitry of the second ADC

GND15ADC2 Ground Quite analog ground to the 1.5 V circuitry of the third ADC

GND33ADC0 Ground Quiet analog ground to the 3.3 V circuitry of the first ADC

GND33ADC1 Ground Quiet analog ground to the 3.3 V circuitry of the second ADC

GND33ADC2 Ground Quiet analog ground to the 3.3 V circuitry of the third ADC

GNDA Ground Quiet analog ground to the analog front-end

GNDAQ Ground Quiet analog ground to the analog I/O of SmartFusion cSoCs

GNDENVM Ground Digital ground to the embedded nonvolatile memory (eNVM)

GNDLPXTAL Ground Analog ground to the low power 32 KHz crystal oscillator circuitry

GNDMAINXTAL Ground Analog ground to the main crystal oscillator circuitry

GNDQ Ground Quiet digital ground supply voltage to input buffers of I/O banks. Within the package, the

GNDQ plane is decoupled from the simultaneous switching noise originated from the

output buffer ground domain. This minimizes the noise transfer within the package and

improves input signal integrity. GNDQ needs to always be connected on the board to

GND.

GNDRCOSC Ground Analog ground to the integrated RC oscillator circuit

GNDSDD0 Ground Analog ground to the first sigma-delta DAC

GNDSDD1 Ground Common analog ground to the second and third sigma-delta DACs

GNDTM0 Ground Analog temperature monitor common ground for signal conditioning blocks SCB 0 and

SCB 1 (see information for pins "TM0" and "TM1" in the "Analog Front-End (AFE)"

section on page 5-12).

GNDTM1 Ground Analog temperature monitor common ground for signal conditioning block SCB 2 and

SBCB 3 (see information for pins "TM2" and "TM3" in the "Analog Front-End (AFE)"

section on page 5-12).

GNDTM2 Ground Analog temperature monitor common ground for signal conditioning block SCB4

GNDVAREF Ground Analog ground reference used by the ADC. This pad should be connected to a quiet

analog ground.

VCC Supply Digital supply to the FPGA fabric and MSS, nominally 1.5 V. VCC is also required for

powering the JTAG state machine, in addition to VJTAG. Even when a SmartFusion

cSoC is in bypass mode in a JTAG chain of interconnected devices, both VCC and

VJTAG must remain powered to allow JTAG signals to pass through the SmartFusion

cSoC.

VCC15A Supply Clean analog 1.5 V supply to the analog circuitry. Always power this pin.

Notes:

1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,

VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.

2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,

VCC15A, and VCC15ADCx.

Pin Descriptions

5-2 Revision 7

VCC15ADC0 Supply Analog 1.5 V supply to the first ADC. Always power this pin.

VCC15ADC1 Supply Analog 1.5 V supply to the second ADC. Always power this pin.

VCC15ADC2 Supply Analog 1.5 V supply to the third ADC. Always power this pin.

VCC33A Supply Clean 3.3 V analog supply to the analog circuitry. VCC33A is also used to feed the

1.5 V voltage regulator for designs that do not provide an external supply to VCC. Refer

to the Voltage Regulator (VR), Power Supply Monitor (PSM), and Power Modes section

in the SmartFusion Microcontroller Subsystem User’s Guide for more information.

VCC33ADC0 Supply Analog 3.3 V supply to the first ADC. Never ground this pin. Can be left floating if

unused.1

VCC33ADC1 Supply Analog 3.3 V supply to the second ADC. Never ground this pin. Can be left floating if

unused.1

VCC33ADC2 Supply Analog 3.3 V supply to the third ADC. Never ground this pin. Can be left floating if

unused.1

VCC33AP Supply Analog clean 3.3 V supply to the charge pump. To avoid high current draw, VCC33AP

should be powered up simultaneously with or after VCC33A. Can be pulled down if

unused.1

VCC33N Supply –3.3 V output from the voltage converter. A 2.2 µF capacitor must be connected from

this pin to GND. Analog charge pump capacitors are not needed if none of the analog

SCB features are used and none of the SDDs are used. In that case it should be left

unconnected.

VCC33SDD0 Supply Analog 3.3 V supply to the first sigma-delta DAC

VCC33SDD1 Supply Common analog 3.3 V supply to the second and third sigma-delta DACs

VCCENVM Supply Digital 1.5 V power supply to the embedded nonvolatile memory blocks. To avoid high

current draw, VCC should be powered up before or simultaneously with VCCENVM.

VCCESRAM Supply Digital 1.5 V power supply to the embedded SRAM blocks. Available only on the

208PQFP package. It should be connected to VCC (in other packages, it is internally

connected to VCC).

VCCFPGAIOB0 Supply Digital supply to the FPGA fabric I/O bank 0 (north FPGA I/O bank) for the output

buffers and I/O logic.

Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off

the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,

nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins

tied to GND.

VCCFPGAIOB1 Supply Digital supply to the FPGA fabric I/O bank 1 (east FPGA I/O bank) for the output buffers

and I/O logic.

Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off

the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,

nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins

tied to GND.

VCCFPGAIOB5 Supply Digital supply to the FPGA fabric I/O bank 5 (west FPGA I/O bank) for the output buffers

and I/O logic.

Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off

the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V,

nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins

tied to GND.

Name Type Description

Notes:

1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,

VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.

2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,

VCC15A, and VCC15ADCx.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-3

VCCLPXTAL Supply Analog supply to the low power 32 KHz crystal oscillator. Always power this pin.1

VCCMAINXTAL Supply Analog supply to the main crystal oscillator circuit. Always power this pin.1

VCCMSSIOB2 Supply Supply voltage to the microcontroller subsystem I/O bank 2 (east MSS I/O bank) for the

output buffers and I/O logic.

Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off

the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal

voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to

GND.

VCCMSSIOB4 Supply Supply voltage to the microcontroller subsystem I/O bank 4 (west MSS I/O bank) for the

output buffers and I/O logic.

Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off

the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal

voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to

GND.

VCCPLLx Supply Analog 1.5 V supply to the PLL. Always power this pin.

VCCRCOSC Supply Analog supply to the integrated RC oscillator circuit. Always power this pin.1

VCOMPLAx Supply Analog ground for the PLL

VDDBAT Supply External battery connection to the low power 32 KHz crystal oscillator (along with

VCCLPXTAL), RTC, and battery switchover circuit. Can be pulled down if unused.

VJTAG Supply Digital supply to the JTAG controller

SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins

can be run at any voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power

supply in a separate I/O bank gives greater flexibility in supply selection and simplifies

power supply and PCB design. If the JTAG interface is neither used nor planned to be

used, the VJTAG pin together with the TRSTB pin could be tied to GND. Note that VCC

is required to be powered for JTAG operation; VJTAG alone is insufficient. If a

SmartFusion cSoC is in a JTAG chain of interconnected boards and it is desired to

power down the board containing the device, this can be done provided both VJTAG

and VCC to the device remain powered; otherwise, JTAG signals will not be able to

transition the device, even in bypass mode. See "JTAG Pins" section on page 5-8.

VPP Supply Digital programming circuitry supply

SmartFusion cSoCs support single-voltage in-system programming (ISP) of the

configuration flash, embedded FlashROM (eFROM), and embedded nonvolatile

memory (eNVM).

For programming, VPP should be in the 3.3 V ± 5% range. During normal device

operation, VPP can be left floating or can be tied to any voltage between 0 V and 3.6 V.

When the VPP pin is tied to ground, it shuts off the charge pump circuitry, resulting in no

sources of oscillation from the charge pump circuitry. For proper programming, 0.01 µF

and 0.33 µF capacitors (both rated at 16 V) are to be connected in parallel across VPP

and GND, and positioned as close to the FPGA pins as possible.

Name Type Description

Notes:

1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A,

VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL.

2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC,

VCC15A, and VCC15ADCx.

Pin Descriptions

5-4 Revision 7

User-Defined Supply Pins

Name Type Polarity/

Bus Size Description

VAREF0 Input 1 Analog reference voltage for first ADC

The SmartFusion cSoC can be configured to generate a 2.56 V internal reference

that can be used by the ADC. While using the internal reference, the reference

voltage is output on the VAREFOUT pin for use as a system reference. If a

different reference voltage is required, it can be supplied by an external source

and applied to this pin. The valid range of values that can be supplied to the ADC

is 1.0 V to 3.3 V. When VAREF0 is internally generated, a bypass capacitor must

be connected from this pin to ground. The value of the bypass capacitor should be

between 3.3 µF and 22 µF, which is based on the needs of the individual designs.

The choice of the capacitor value has an impact on the settling time it takes the

VAREF0 signal to reach the required specification of 2.56 V to initiate valid

conversions by the ADC. If the lower capacitor value is chosen, the settling time

required for VAREF0 to achieve 2.56 V will be shorter than when selecting the

larger capacitor value. The above range of capacitor values supports the accuracy

specification of the ADC, which is detailed in the datasheet. Designers choosing

the smaller capacitor value will not obtain as much margin in the accuracy as that

achieved with a larger capacitor value. See the Analog-to-Digital Converter (ADC)

section in the SmartFusion Programmable Analog User’s Guide for more

information. The SoC Products Group recommends customers use 10 µF as the

value of the bypass capacitor. Designers choosing to use an external VAREF0

need to ensure that a stable and clean VAREF0 source is supplied to the VAREF0

pin before initiating conversions by the ADC. To use the internal voltage reference,

you must connect the VAREFOUT pin to the appropriate ADC VAREFx input—

either the VAREF0 or VAREF1 pin—on the PCB.

VAREF1 Input 1 Analog reference voltage for second ADC

See "VAREF0" above for more information.

VAREF2 Input 1 Analog reference voltage for third ADC

See "VAREF0" above for more.

VAREFOUT Out 1 Internal 2.56 V voltage reference output. Can be used to provide the two ADCs

with a unique voltage reference externally by connecting VAREFOUT to both

VAREF0 and VAREF1. To use the internal voltage reference, you must connect

the VAREFOUT pin to the appropriate ADC VAREFx input—either the VAREF0 or

VAREF1 pin—on the PCB.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-5

User Pins

Name Type Polarity/

Bus Size Description

GPIO_x In/out 32 Microcontroller Subsystem (MSS) General Purpose I/O (GPIO). The MSS GPIO pin

functions as an input, output, tristate, or bidirectional buffer with configurable interrupt

generation and Schmitt trigger support. Input and output signal levels are compatible with

the I/O standard selected.

Unused GPIO pins are tristated and do not include pull-up or pull-down resistors.

During power-up, the used GPIO pins are tristated with no pull-up or pull-down resistors

until Sys boot configures them.

Some of these pins are also multiplexed with integrated peripherals in the MSS (SPI, I2C,

and UART).

GPIOs can be routed to dedicated I/O buffers (MSSIOBUF) or in some cases to the FPGA

fabric interface through an IOMUX. This allows GPIO pins to be multiplexed as either I/Os

for the FPGA fabric, the ARM® Cortex-M3 or for given integrated MSS peripherals. The

MSS peripherals are not multiplexed with each other; they are multiplexed only with the

GPIO block. For more information, see the General Purpose I/O Block (GPIO) section in

the SmartFusion Microcontroller Subsystem User’s Guide.

IO In/out FPGA user I/O. The naming convention used for each FPGA user I/O is /IOuxwBVz,

where:

u = I/O pair number in bank, starting at 00 from the northwest I/O bank and proceeding in a

clockwise direction.

x = P (positive) or N (negative) or S (single-ended) or R (regular, single-ended).

w = D (Differential Pair), P (Pair), or S (Single-Ended). D (Differential Pair) if both members

of the pair are bonded out to adjacent pins or are separated only by one GND or NC pin; P

(Pair) if both members of the pair are bonded out but do not meet the adjacency

requirement; or S (Single-Ended) if the I/O pair is not bonded out. For Differential Pairs (D),

adjacency for ball grid packages means only vertical or horizontal. Diagonal adjacency

does not meet the requirements for a true differential pair.

y = Bank number starting at 0 from northwest I/O bank and incrementing clockwise.

z = VREF mini bank number.

The FPGA user I/O pin functions as an input, output, tristate or bidirectional buffer. Input

and output signal levels are compatible with the I/O standard selected. Unused I/O pins are

disabled by Libero IDE software and include a weak pull-up resistor. During power-up, the

used I/O pins are tristated with no pull-up or pull-down resistors until I/O enable (there is a

delay after voltage stabilizes, and different I/O banks power up sequentially to avoid a

surge of ICCI).

Unused I/Os are configured as follows:

• Output buffer is disabled (with tristate value of high impedance)

• Input buffer is disabled (with tristate value of high impedance)

• Weak pull-up is programmed

Some of these pins are also multiplexed with integrated peripherals in the MSS (Ethernet

MAC and external memory controller).

Unused MSS I/Os are neither weakly pulled-up nor weakly pulled-down. The Schmitt

trigger is disabled. Essentially, I/Os have the reset values as defined in Table 19-25

IOMUX_n_CR, in the SmartFusion Microcontroller Subsystem User's Guide.

During programming, I/Os become tristated and weakly pulled up to VCCI. With the VCCI

and VCC supplies continuously powered up, when the device transitions from

programming to operating mode, the I/Os are instantly configured to the desired user

configuration. For more information, see the SmartFusion FPGA User I/Os section in the

SmartFusion FPGA Fabric User’s Guide.

Pin Descriptions

5-6 Revision 7

Special Function Pins

Name Type Polarity/Bus Size Description

NC No connect

This pin is not connected to circuitry within the device. These pins can

be driven to any voltage or can be left floating with no effect on the

operation of the device.

DC Do not connect.

This pin should not be connected to any signals on the PCB. These

pins should be left unconnected.

LPXIN In 1 Low power 32 KHz crystal oscillator.

Input from the 32 KHz oscillator. Pin for connecting a low power 32

KHz watch crystal. If not used, the LPXIN pin can be left floating. For

more information, see the PLLs, Clock Conditioning Circuitry, and On-

Chip Crystal Oscillators section in the SmartFusion Microcontroller

Subsystem User’s Guide.

LPXOUT In 1 Low power 32 KHz crystal oscillator.

Output to the 32 KHz oscillator. Pin for connecting a low power 32 KHz

watch crystal. If not used, the LPXOUT pin can be left floating. For

more information, see the PLLs, Clock Conditioning Circuitry, and On-

Chip Crystal Oscillators section in the SmartFusion Microcontroller

Subsystem User’s Guide.

MAINXIN In 1 Main crystal oscillator circuit.

Input to the crystal oscillator circuit. Pin for connecting an external

crystal, ceramic resonator, or RC network. When using an external

crystal or ceramic oscillator, external capacitors are also

recommended. Refer to documentation from the crystal oscillator

manufacturer for proper capacitor value.

If using an external RC network or clock input, MAINXIN should be

used and MAINXOUT left unconnected. For more information, see the

PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators

section in the SmartFusion Microcontroller Subsystem User’s Guide.

MAINXOUT Out 1 Main crystal oscillator circuit.

Output from the crystal oscillator circuit. Pin for connecting external

crystal or ceramic resonator. When using an external crystal or ceramic

oscillator, external capacitors are also recommended. Refer to

documentation from the crystal oscillator manufacturer for proper

capacitor value.

If using external RC network or clock input, MAINXIN should be used

and MAINXOUT left unconnected. For more information, see the PLLs,

Clock Conditioning Circuitry, and On-Chip Crystal Oscillators section in

the SmartFusion Microcontroller Subsystem User’s Guide.

NCAP 1 Negative capacitor connection.

This is the negative terminal of the charge pump. A capacitor, with a

2.2 µF recommended value, is required to connect between PCAP and

NCAP. Analog charge pump capacitors are not needed if none of the

analog SCB features are used and none of the SDDs are used. In that

case it should be left unconnected.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-7

PCAP 1 Positive Capacitor connection.

This is the positive terminal of the charge pump. A capacitor, with a 2.2

µF recommended value, is required to connect between PCAP and

NCAP. If this pin is not used, it must be left unconnected/floating. In this

case, no capacitor is needed. Analog charge pump capacitors are not

needed if none of the analog SCB features are used, and none of the

SDDs are used.

PTBASE 1 Pass transistor base connection

This is the control signal of the voltage regulator. This pin should be

connected to the base of an external pass transistor used with the 1.5

V internal voltage regulator and can be floating if not used.

PTEM 1 Pass transistor emitter connection.

This is the feedback input of the voltage regulator.

This pin should be connected to the emitter of an external pass

transistor used with the 1.5 V internal voltage regulator and can be

floating if not used.

MSS_RESET_N In Low Reset signal for the microcontroller subsystem. Can be left floating

because internal pull-up is there.

PU_N In Low Push-button is the connection for the external momentary switch used

to turn on the 1.5 V voltage regulator and can be floating if not used.

Name Type Polarity/Bus Size Description

Pin Descriptions

5-8 Revision 7

JTAG Pins

SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any

voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to operate,

even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the

SmartFusion cSoC part must be supplied to allow JTAG signals to transition the SmartFusion cSoC.

Isolating the JTAG power supply in a separate I/O bank gives greater flexibility with supply selection and

simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used,

the VJTAG pin together with the TRSTB pin could be tied to GND.

Name Type Polarity/

Bus Size Description

JTAGSEL In 1 JTAG controller selection

Depending on the state of the JTAGSEL pin, an external JTAG controller will either

see the FPGA fabric TAP/auxiliary TAP (High) or the Cortex-M3 JTAG debug

interface (Low).

The JTAGSEL pin should be connected to an external pull-up resistor such that the

default configuration selects the FPGA fabric TAP.

TCK In 1 Test clock

Serial input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an

internal pull-up/-down resistor. If JTAG is not used, it is recommended to tie off TCK

to GND or VJTAG through a resistor placed close to the FPGA pin. This prevents

JTAG operation in case TMS enters an undesired state.

Note that to operate at all VJTAG voltages, 500 Ω to 1 kΩ will satisfy the requirements.

Refer to Table 5-1 on page 5-9 for more information.

Can be left floating when unused.

TDI In 1 Test data

Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal

weak pull-up resistor on the TDI pin.

TDO Out 1 Test data

Serial output for JTAG boundary scan, ISP, and UJTAG usage.

TMS In HIGH Test mode select

The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI, TDO,

TRST). There is an internal weak pull-up resistor on the TMS pin.

Can be left floating when unused.

TRSTB In HIGH Boundary scan reset pin

The TRST pin functions as an active low input to asynchronously initialize (or reset)

the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST

pin. If JTAG is not used, an external pull-down resistor could be included to ensure

the TAP is held in reset mode. The resistor values must be chosen from Table 5-1 on

page 5-9 and must satisfy the parallel resistance value requirement. The values in

Table 5-1 on page 5-9 correspond to the resistor recommended when a single device

is used. The values correspond to the equivalent parallel resistor when multiple

devices are connected via a JTAG chain.

In critical applications, an upset in the JTAG circuit could allow entering an undesired

JTAG state. In such cases, it is recommended that you tie off TRST to GND through a

resistor placed close to the FPGA pin.

The TRSTB pin also resets the serial wire JTAG – debug port (SWJ-DP) circuitry

within the Cortex-M3.

Can be left floating when unused.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-9

Table 5-1 • Recommended Tie-Off Values for the TCK and TRST Pins

VJTAG Tie-Off Resistance1, 2

VJTAG at 3.3 V 200 Ω to 1 kΩ

VJTAG at 2.5 V 200 Ω to 1 kΩ

VJTAG at 1.8 V 500 Ω to 1 kΩ

VJTAG at 1.5 V 500 Ω to 1 kΩ

Notes:

1. The TCK pin can be pulled up/down.

2. The TRST pin can only be pulled down.

1. Equivalent parallel resistance if more than one device is on JTAG chain.

Pin Descriptions

5-10 Revision 7

Microcontroller Subsystem (MSS)

Name Type Polarity/

Bus Size Description

External Memory Controller

EMC_ABx Out 26 External memory controller address bus

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

EMC_BYTENx Out LOW/2 External memory controller byte enable

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

EMC_CLK Out Rise External memory controller clock

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

EMC_CSx_N Out LOW/2 External memory controller chip selects

Can also be used as an FPGA User IO (see "IO" on page 5-5).

EMC_DBx In/out 16 External memory controller data bus

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

EMC_OENx_N Out LOW/2 External memory controller output enables

Can also be used as an FPGA User IO (see "IO" on page 5-5).

EMC_RW_N Out Level External memory controller read/write. Read = High, write = Low.

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

Inter-Integrated Circuit (I2C) Peripherals

I2C_0_SCL In/out 1 I2C bus serial clock output. First I2C.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

I2C_0_SDA In/out 1 I2C bus serial data input/output. First I2C.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

I2C_1_SCL In/out 1 I2C bus serial clock output. Second I2C.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

I2C_1_SDA In/out 1 I2C bus serial data input/output. Second I2C.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

Serial Peripheral Interface (SPI) Controllers

SPI_0_CLK Out 1 Clock. First SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_0_DI In 1 Data input. First SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_0_DO Out 1 Data output. First SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_0_SS Out 1 Slave select (chip select). First SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_1_CLK Out 1 Clock. Second SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_1_DI In 1 Data input. Second SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-11

SPI_1_DO Out 1 Data output. Second SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

SPI_1_SS Out 1 Slave select (chip select). Second SPI.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

Universal Asynchronous Receiver/Transmitter (UART) Peripherals

UART_0_RXD In 1 Receive data. First UART.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

UART_0_TXD Out 1 Transmit data. First UART.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

UART_1_RXD In 1 Receive data. Second UART.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

UART_1_TXD Out 1 Transmit data. Second UART.

Can also be used as an MSS GPIO (see "GPIO_x" on page 5-5).

Ethernet MAC

MAC_CLK In Rise Receive clock. 50 MHz ± 50 ppm clock source received from RMII PHY.

Can be left floating when unused.

MAC_CRSDV In High Carrier sense/receive data valid for RMII PHY

Can also be used as an FPGA User IO (see "IO" on page 5-5).

MAC_MDC Out Rise RMII management clock

Can also be used as an FPGA User IO (see "IO" on page 5-5).

MAC_MDIO In/Out 1 RMII management data input/output

Can also be used as an FPGA User IO (see "IO" on page 5-5).

MAC_RXDx In 2 Ethernet MAC receive data. Data recovered and decoded by PHY. The

RXD[0] signal is the least significant bit.

Can also be used as an FPGA User I/O (see "IO" on page 5-5).

MAC_RXER In HIGH Ethernet MAC receive error. If MACRX_ER is asserted during reception,

the frame is received and status of the frame is updated with

MACRX_ER.

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

MAC_TXDx Out 2 Ethernet MAC transmit data. The TXD[0] signal is the least significant

bit.

Can also be used as an FPGA user I/O (see "IO" on page 5-5).

MAC_TXEN Out HIGH Ethernet MAC transmit enable. When asserted, indicates valid data for

the PHY on the TXD port.

Can also be used as an FPGA User I/O (see "IO" on page 5-5).

Name Type Polarity/

Bus Size Description

Pin Descriptions

5-12 Revision 7

Analog Front-End (AFE)

Name Type Description

Associated With

ADC/SDD SCB

ABPS0 In SCB 0 / active bipolar prescaler input 1.

See the Active Bipolar Prescaler (ABPS) section in the SmartFusion

Programmable Analog User’s Guide.

ADC0 SCB0

ABPS1 In SCB 0 / active bipolar prescaler Input 2 ADC0 SCB0

ABPS2 In SCB 1 / active bipolar prescaler Input 1 ADC0 SCB1

ABPS3 In SCB 1 / active bipolar prescaler Input 2 ADC0 SCB1

ABPS4 In SCB 2 / active bipolar prescaler Input 1 ADC1 SCB2

ABPS5 In SCB 2 / active bipolar prescaler Input 2 ADC1 SCB2

ABPS6 In SCB 3 / active bipolar prescaler Input 1 ADC1 SCB3

ABPS7 In SCB 3 / active bipolar prescaler input 2 ADC1 SCB3

ABPS8 In SCB 4 / active bipolar prescaler input 1 ADC2 SCB4

ABPS9 In SCB 4 / active bipolar prescaler input 2 ADC2 SCB4

ADC0 In ADC 0 direct input 0 / FPGA Input.

See the "Sigma-Delta Digital-to-Analog Converter (DAC)" section in

the SmartFusion Programmab l e An al o g U ser’s Guide.

ADC0 SCB0

ADC1 In ADC 0 direct input 1 / FPGA input ADC0 SCB0

ADC2 In ADC 0 direct input 2 / FPGA input ADC0 SCB1

ADC3 In ADC 0 direct input 3 / FPGA input ADC0 SCB1

ADC4 In ADC 1 direct input 0 / FPGA input ADC1 SCB2

ADC5 In ADC 1 direct input 1 / FPGA input ADC1 SCB2

ADC6 In ADC 1 direct input 2 / FPGA input ADC1 SCB3

ADC7 In ADC 1 direct input 3 / FPGA input ADC1 SCB3

ADC8 In ADC 2 direct input 0 / FPGA input ADC2 SCB4

ADC9 In ADC 2 direct input 1 / FPGA input ADC2 SCB4

ADC10 In ADC 2 direct input 2 / FPGA input ADC2 N/A

ADC11 In ADC 2 direct input 3 / FPGA input ADC2 N/A

CM0 In SCB 0 / high side of current monitor / comparator

Positive input. See the Current Monitor section in the SmartFusion

Programmable Analog User’s Guide.

ADC0 SCB0

CM1 In SCB 1 / high side of current monitor / comparator. Positive input. ADC0 SCB1

CM2 In SCB 2 / high side of current monitor / comparator. Positive input. ADC1 SCB2

CM3 In SCB 3 / high side of current monitor / comparator. Positive input. ADC1 SCB3

CM4 In SCB 4 / high side of current monitor / comparator. Positive input. ADC2 SCB4

Note: Unused analog inputs should be ground ed. This aids in shielding and prevents an undesired coupling pa th.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-13

TM0 In SCB 0 / low side of current monitor / comparator

Negative input / high side of temperature monitor. See the

Temperature Monitor section.

ADC0 SCB0

TM1 In SCB 1 / low side of current monitor / comparator. Negative input /

high side of temperature monitor.

ADC0 SCB1

TM2 In SCB 2 / low side of current monitor / comparator. Negative input /

high side of temperature monitor.

ADC1 SCB2

TM3 In SCB 3 low side of current monitor / comparator. Negative input / high

side of temperature monitor.

ADC1 SCB3

TM4 In SCB 4 low side of current monitor / comparator. Negative input / high

side of temperature monitor.

ADC2 SCB4

SDD0 Out Output of SDD0

See the Sigma-Delta Digital-to-Analog Converter (DAC) section in

the SmartFusion Programmab l e An al o g U ser’s Guide.

SDD0 N/A

SDD1 Out Output of SDD1 SDD1 N/A

SDD2 Out Output of SDD2 SDD2 N/A

Name Type Description

Associated With

ADC/SDD SCB

Note: Unused analog inputs should be ground ed. This aids in shielding and prevents an undesired coupling pa th.

Pin Descriptions

5-14 Revision 7

Analog Front-End Pin-Level Function Multiplexing

Table 5-2 describes the relationships between the various internal signals found in the analog front-end

(AFE) and how they are multiplexed onto the external package pins. Note that, in general, only one

function is available for those pads that have numerous functions listed. The exclusion to this rule is

when a comparator is used; the ADC can still convert either input side of the comparator.

Table 5-2 • Relationsh ips Between Signals in the An alog Front-End

Pin ADC

Channel Dir.-In

Option Prescaler Current

Mon. Temp.

Mon. Comp ar. LVTTL SDD MUX SDD

ABPS0 ADC0_CH1 ABPS0_IN

ABPS1 ADC0_CH2 ABPS1_IN

ABPS2 ADC0_CH5 ABPS2_IN

ABPS3 ADC0_CH6 ABPS3_IN

ABPS4 ADC1_CH1 ABPS4_IN

ABPS5 ADC1_CH2 ABPS5_IN

ABPS6 ADC1_CH5 ABPS6_IN

ABPS7 ADC1_CH6 ABPS7_IN

ABPS8 ADC2_CH1 ABPS8_IN

ABPS9 ADC2_CH2 ABPS9_IN

ADC0 ADC0_CH9 Yes CMP1_P LVTTL0_IN

ADC1 ADC0_CH10 Yes CMP1_N LVTTL1_IN SDDM0_OUT

ADC2 ADC0_CH11 Yes CMP3_P LVTTL2_IN

ADC3 ADC0_CH12 Yes CMP3_N LVTTL3_IN SDDM1_OUT

ADC4 ADC1_CH9 Yes CMP5_P LVTTL4_IN

ADC5 ADC1_CH10 Yes CMP5_N LVTTL5_IN SDDM2_OUT

ADC6 ADC1_CH11 Yes CMP7_P LVTTL6_IN

ADC7 ADC1_CH12 Yes CMP7_N LVTTL7_IN SDDM3_OUT

ADC8 ADC2_CH9 Yes CMP9_P LVTTL8_IN

ADC9 ADC2_CH10 Yes CMP9_N LVTTL9_IN SDDM4_OUT

ADC10 ADC2_CH11 Yes LVTTL10_IN

ADC11 ADC2_CH12 Yes LVTTL11_IN

CM0 ADC0_CH3 Yes CM0_H CMP0_P

CM1 ADC0_CH7 Yes CM1_H CMP2_P

CM2 ADC1_CH3 Yes CM2_H CMP4_P

CM3 ADC1_CH7 Yes CM3_H CMP6_P

CM4 ADC2_CH3 Yes CM4_H CMP8_P

SDD0 ADC0_CH15 SDD0_OUT

SDD1 ADC1_CH15 SDD1_OUT

Notes:

1. ABPSx_IN: Input to active bipolar prescaler channel x.

2. CMx_H/L: Current monito r channel x, high/low side.

3. TMx_IO: Temperature monitor channel x.

4. CMPx_P/N: Comparator channel x, positive/negative input.

5. LVTTLx_IN: LVTTL I/O channel x.

6. SDDMx_OUT: Output from sigma-delta DAC MUX channel x.

7. SDDx_OUT: Direct output from sigma-delta DAC channel x.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-15

SDD2 ADC2_CH15 SDD2_OUT

TM0 ADC0_CH4 Yes CM0_L TM0_IO CMP0_N

TM1 ADC0_CH8 Yes CM1_L TM1_IO CMP2_N

TM2 ADC1_CH4 Yes CM2_L TM2_IO CMP4_N

TM3 ADC1_CH8 Yes CM3_L TM3_IO CMP6_N

TM4 ADC2_CH4 Yes CM4_L TM4_IO CMP8_N

Table 5-2 • Relationsh ips Between Signals in the An alog Front-End

Pin ADC

Channel Dir.-In

Option Prescaler Current

Mon. Temp.

Mon. Comp ar. LVTTL SDD MUX SDD

Notes:

1. ABPSx_IN: Input to active bipolar prescaler channel x.

2. CMx_H/L: Current monito r channel x, high/low side.

3. TMx_IO: Temperature monitor channel x.

4. CMPx_P/N: Comparator channel x, positive/negative input.

5. LVTTLx_IN: LVTTL I/O channel x.

6. SDDMx_OUT: Output from sigma-delta DAC MUX channel x.

7. SDDx_OUT: Direct output from sigma-delta DAC channel x.

Pin Descriptions

5-16 Revision 7

Pin Assignment Tables

CS288

For Package Manufacturing and Environmental information, visit the Resource Center at

http://www.actel.com/products/solutions/package/docs.aspx.

Note: Bottom view

21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

A1 Ball Pad Corner

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-17

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

A1 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A2 GNDQ GNDQ GNDQ

A3 EMC_CLK/IO00NDB0V0 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0

A4 EMC_RW_N/IO00PDB0V0 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0

A5 GND GND GND

A6 EMC_CS1_N/IO01PDB0V0 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0

A7 EMC_CS0_N/IO01NDB0V0 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0

A8 EMC_AB[0]/IO04NPB0V0 EMC_AB[0]/IO04NPB0V0 EMC_AB[0]/IO06NPB0V0

A9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A10 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0

A11 EMC_AB[8]/IO08NPB0V0 EMC_AB[8]/IO08NPB0V0 EMC_AB[8]/IO13NPB0V0

A12 EMC_AB[14]/IO11NPB0V0 EMC_AB[14]/IO11NPB0V0 EMC_AB[14]/IO15NPB0V0

A13 GND GND GND

A14 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0

A15 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0

A16 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0

A17 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A18 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0

A19 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0

A20 GNDQ GNDQ GNDQ

A21 GND GND GND

AA1 ADC1 ABPS1 ABPS1

AA2 GNDAQ GNDAQ GNDAQ

AA3 GNDA GNDA GNDA

AA4 VCC33N VCC33N VCC33N

AA5 SDD0 SDD0 SDD0

AA6 ADC0 ABPS0 ABPS0

AA7 NC GNDTM0 GNDTM0

AA8 NC ABPS2 ABPS2

AA9 NC VAREF0 VAREF0

AA10 NC GND15ADC0 GND15ADC0

AA11 ADC9 ADC6 ADC6

AA12 ABPS1 ABPS7 ABPS7

AA13 ADC6 TM2 TM2

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-18 Revision 7

AA14 NC ABPS4 ABPS4

AA15 NC SDD1 SDD1

AA16 GNDVAREF GNDVAREF GNDVAREF

AA17 VAREFOUT VAREFOUT VAREFOUT

AA18 PU_N PU_N PU_N

AA19 VCC33A VCC33A VCC33A

AA20 PTEM PTEM PTEM

AA21 GND GND GND

B1 GND GND GND

B21 IO17PDB0V0 GBB2/IO20NDB1V0 GBB2/IO27NDB1V0

C1 EMC_DB[15]/IO45PDB5V0 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0

C3 VCOMPLA0 VCOMPLA VCOMPLA0

C4 VCCPLL0 VCCPLL VCCPLL0

C5 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

C6 EMC_AB[1]/IO04PPB0V0 EMC_AB[1]/IO04PPB0V0 EMC_AB[1]/IO06PPB0V0

C7 GND GND GND

C8 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0

C9 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0

C10 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0

C11 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

C12 EMC_AB[9]/IO08PPB0V0 EMC_AB[9]/IO08PPB0V0 EMC_AB[9]/IO13PPB0V0

C13 EMC_AB[15]/IO11PPB0V0 EMC_AB[15]/IO11PPB0V0 EMC_AB[15]/IO15PPB0V0

C14 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0

C15 GND GND GND

C16 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0

C17 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0

C18 NC NC VCCPLL1

C19 NC NC VCOMPLA1

C21 IO17NDB0V0 GBA2/IO20PDB1V0 GBA2/IO27PDB1V0

D1 EMC_DB[14]/IO45NDB5V0 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0

D3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

D19 GND GND GND

D21 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

E1 EMC_DB[13]/IO44PDB5V0 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-19

E3 EMC_DB[12]/IO44NDB5V0 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0

E5 GNDQ GNDQ GNDQ

E6 EMC_BYTEN[0]/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0

E7 EMC_BYTEN[1]/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0

E8 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0

E9 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0

E10 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0

E11 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0

E12 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0

E13 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0

E14 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0

E15 GCC0/IO18NPB0V0 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0

E16 GCA1/IO20PPB0V0 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0

E17 GCC1/IO18PPB0V0 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0

E19 GCB2/IO22PPB1V0 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0

E21 IO21NDB1V0 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0

F1 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

F3 GFB2/IO42NDB5V0 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0

F5 GFA2/IO42PDB5V0 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0

F6 EMC_DB[11]/IO43PDB5V0 EMC_DB[11]/IO69PDB5V0 EMC_DB[11]/IO86PDB5V0

F7 GND GND GND

F8 NC GFC1/IO66PPB5V0 GFC1/IO83PPB5V0

F9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

F10 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0

F11 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0

F12 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0

F13 GND GND GND

F14 GCB1/IO19PPB0V0 GCC1/IO26PPB1V0 GCC1/IO35PPB1V0

F15 GNDQ GNDQ GNDQ

F16 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

F17 GCB0/IO19NPB0V0 IO24NDB1V0 IO33NDB1V0

F19 IO23NDB1V0 GDB1/IO30PDB1V0 GDB1/IO39PDB1V0

F21 GCA2/IO21PDB1V0 GDB0/IO30NDB1V0 GDB0/IO39NDB1V0

G1 IO41NDB5V0 IO67NDB5V0 IO84NDB5V0

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-20 Revision 7

G3 GFC2/IO41PDB5V0 GFC2/IO67PDB5V0 GFC2/IO84PDB5V0

G5 NC GFB1/IO65PDB5V0 GFB1/IO82PDB5V0

G6 EMC_DB[10]/IO43NDB5V0 EMC_DB[10]/IO69NDB5V0 EMC_DB[10]/IO86NDB5V0

G9 NC GFC0/IO66NPB5V0 GFC0/IO83NPB5V0

G13 GCA0/IO20NPB0V0 GCC0/IO26NPB1V0 GCC0/IO35NPB1V0

G16 NC GDA0/IO31NDB1V0 GDA0/IO40NDB1V0

G17 IO22NPB1V0 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0

G19 GCC2/IO23PDB1V0 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0

G21 GND GND GND

H1 EMC_DB[9]/IO40PPB5V0 EMC_DB[9]/GEC1/IO63PPB5V0 EMC_DB[9]/GEC1/IO80PPB5V0

H3 GND GND GND

H5 NC GFB0/IO65NDB5V0 GFB0/IO82NDB5V0

H6 EMC_DB[7]/IO39PDB5V0 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0

H8 GND GND GND

H9 VCC VCC VCC

H10 GND GND GND

H11 VCC VCC VCC

H12 GND GND GND

H13 VCC VCC VCC

H14 GND GND GND

H16 NC GDA1/IO31PDB1V0 GDA1/IO40PDB1V0

H17 NC GDC2/IO32PPB1V0 GDC2/IO41PPB1V0

H19 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

H21 NC GDB2/IO33PDB1V0 GDB2/IO42PDB1V0

J1 EMC_DB[4]/IO38NPB5V0 EMC_DB[4]/GEA0/IO61NPB5V0 EMC_DB[4]/GEA0/IO78NPB5V0

J3 EMC_DB[8]/IO40NPB5V0 EMC_DB[8]/GEC0/IO63NPB5V0 EMC_DB[8]/GEC0/IO80NPB5V0

J5 EMC_DB[1]/IO36PDB5V0 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0

J6 EMC_DB[6]/IO39NDB5V0 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0

J7 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

J8 VCC VCC VCC

J9 GND GND GND

J10 VCC VCC VCC

J11 GND GND GND

J12 VCC VCC VCC

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-21

J13 GND GND GND

J14 VCC VCC VCC

J15 VPP VPP VPP

J16 NC IO32NPB1V0 IO41NPB1V0

J17 NC GNDQ GNDQ

J19 VCCMAINXTAL VCCMAINXTAL VCCMAINXTAL

J21 NC GDA2/IO33NDB1V0 GDA2/IO42NDB1V0

K1 GND GND GND

K3 EMC_DB[5]/IO38PPB5V0 EMC_DB[5]/GEA1/IO61PPB5V0 EMC_DB[5]/GEA1/IO78PPB5V0

K5 EMC_DB[0]/IO36NDB5V0 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0

K6 EMC_DB[3]/IO37PPB5V0 EMC_DB[3]/GEC2/IO60PPB5V0 EMC_DB[3]/GEC2/IO77PPB5V0

K8 GND GND GND

K9 VCC VCC VCC

K10 GND GND GND

K11 VCC VCC VCC

K12 GND GND GND

K13 VCC VCC VCC

K14 GND GND GND

K16 LPXOUT LPXOUT LPXOUT

K17 GNDLPXTAL GNDLPXTAL GNDLPXTAL

K19 GNDMAINXTAL GNDMAINXTAL GNDMAINXTAL

K21 MAINXIN MAINXIN MAINXIN

L1 GNDRCOSC GNDRCOSC GNDRCOSC

L3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

L5 EMC_DB[2]/IO37NPB5V0 EMC_DB[2]/IO60NPB5V0 EMC_DB[2]/IO77NPB5V0

L6 NC GNDQ GNDQ

L8 VCC VCC VCC

L9 GND GND GND

L10 VCC VCC VCC

L12 VCC VCC VCC

L13 GND GND GND

L14 VCC VCC VCC

L16 VCCLPXTAL VCCLPXTAL VCCLPXTAL

L17 VDDBAT VDDBAT VDDBAT

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-22 Revision 7

L19 LPXIN LPXIN LPXIN

L21 MAINXOUT MAINXOUT MAINXOUT

M1 VCCRCOSC VCCRCOSC VCCRCOSC

M3 MSS_RESET_N MSS_RESET_N MSS_RESET_N

M5 GPIO_5/IO28RSB4V0 GPIO_5/IO42RSB4V0 GPIO_5/IO51RSB4V0

M6 GND GND GND

M8 GND GND GND

M9 VCC VCC VCC

M10 GND GND GND

M11 VCC VCC VCC

M12 GND GND GND

M13 VCC VCC VCC

M14 GND GND GND

M16 TMS TMS TMS

M17 VJTAG VJTAG VJTAG

M19 TDO TDO TDO

M21 TRSTB TRSTB TRSTB

N1 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

N3 GND GND GND

N5 GPIO_4/IO29RSB4V0 GPIO_4/IO43RSB4V0 GPIO_4/IO52RSB4V0

N6 GPIO_8/IO25RSB4V0 GPIO_8/IO39RSB4V0 GPIO_8/IO48RSB4V0

N7 GPIO_9/IO24RSB4V0 GPIO_9/IO38RSB4V0 GPIO_9/IO47RSB4V0

N8 VCC VCC VCC

N9 GND GND GND

N10 VCC VCC VCC

N11 GND GND GND

N12 VCC VCC VCC

N13 GND GND GND

N14 VCC VCC VCC

N15 GND GND GND

N16 TCK TCK TCK

N17 TDI TDI TDI

N19 GNDENVM GNDENVM GNDENVM

N21 VCCENVM VCCENVM VCCENVM

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-23

P1 GPIO_0/IO33RSB4V0 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0

P3 GPIO_7/IO26RSB4V0 GPIO_7/IO40RSB4V0 GPIO_7/IO49RSB4V0

P5 GPIO_6/IO27RSB4V0 GPIO_6/IO41RSB4V0 GPIO_6/IO50RSB4V0

P6 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

P8 GND GND GND

P9 VCC VCC VCC

P10 GND GND GND

P11 VCC VCC VCC

P12 GND GND GND

P13 VCC VCC VCC

P14 GND GND GND

P16 JTAGSEL JTAGSEL JTAGSEL

P17 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23

P19 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

P21 GND GND GND

R1 GPIO_2/IO31RSB4V0 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0

R3 GPIO_1/IO32RSB4V0 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0

R5 GPIO_3/IO30RSB4V0 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0

R6 GPIO_10/IO35RSB4V0 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0

R9 GNDA GNDA GNDA

R13 GNDA GNDA GNDA

R16 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29

R17 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28

R19 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22

R21 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30

T1 GND GND GND

T3 NC MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0

T5 NC MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0

T6 GPIO_11/IO34RSB4V0 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0

T7 NC CM1 CM1

T8 NC ADC1 ADC1

T9 NC GND33ADC0 GND33ADC0

T10 NC VCC15ADC0 VCC15ADC0

T11 GND33ADC0 GND33ADC1 GND33ADC1

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-24 Revision 7

T12 VAREF0 VAREF1 VAREF1

T13 ADC7 ADC4 ADC4

T14 TM0 TM3 TM3

T15 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27

T16 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

T17 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21

T19 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20

T21 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31

U1 NC MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0

U3 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

U5 VCC33SDD0 VCC33SDD0 VCC33SDD0

U6 VCC15A VCC15A VCC15A

U7 NC ABPS3 ABPS3

U8 NC ADC2 ADC2

U9 NC VCC33ADC0 VCC33ADC0

U10 GND15ADC0 GND15ADC1 GND15ADC1

U11 VCC33ADC0 VCC33ADC1 VCC33ADC1

U12 ADC10 ADC7 ADC7

U13 ABPS0 ABPS6 ABPS6

U14 GNDTM0 GNDTM1 GNDTM1

U15 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26

U16 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18

U17 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19

U19 GND GND GND

U21 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24

V1 NC MAC_CLK MAC_CLK

V3 GNDSDD0 GNDSDD0 GNDSDD0

V19 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25

V21 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

W1 PCAP PCAP PCAP

W3 NCAP NCAP NCAP

W4 ADC2 CM0 CM0

W5 ADC3 TM0 TM0

W6 ADC4 TM1 TM1

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-25

W7 NC ADC0 ADC0

W8 NC ADC3 ADC3

W9 NC GND33ADC0 GND33ADC0

W10 VCC15ADC0 VCC15ADC1 VCC15ADC1

W11 GND33ADC0 GND33ADC1 GND33ADC1

W12 ADC8 ADC5 ADC5

W13 CM0 CM3 CM3

W14 ADC5 CM2 CM2

W15 NC ABPS5 ABPS5

W16 GNDAQ GNDAQ GNDAQ

W17 NC VCC33SDD1 VCC33SDD1

W18 NC GNDSDD1 GNDSDD1

W19 PTBASE PTBASE PTBASE

W21 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17

Y1 VCC33AP VCC33AP VCC33AP

Y21 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16

No.

CS288

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-26 Revision 7

PQ208

Note

For Package Manufacturing and Environmental information, visit the Resource Center at

http://www.actel.com/products/solutions/package/docs.aspx.

208-Pin PQFP

1208

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-27

Pin Number

PQ208

A2F200 A2F500

1VCCPLL VCCPLL0

2VCOMPLA VCOMPLA0

3 GNDQ GNDQ

4EMC_DB[15]/GAA2/IO71PDB5V0 GAA2/IO88PDB5V0

5EMC_DB[14]/GAB2/IO71NDB5V0 GAB2/IO88NDB5V0

6EMC_DB[13]/GAC2/IO70PDB5V0 GAC2/IO87PDB5V0

7EMC_DB[12]/IO70NDB5V0 IO87NDB5V0

8VCC VCC

9GND GND

10 VCCFPGAIOB5 VCCFPGAIOB5

11 EMC_DB[11]/IO69PDB5V0 IO86PDB5V0

12 EMC_DB[10]/IO69NDB5V0 IO86NDB5V0

13 GFA2/IO68PSB5V0 GFA2/IO85PSB5V0

14 GFA1/IO64PDB5V0 GFA1/IO81PDB5V0

15 GFA0/IO64NDB5V0 GFA0/IO81NDB5V0

16 EMC_DB[9]/GEC1/IO63PDB5V0 GEC1/IO80PDB5V0

17 EMC_DB[8]/GEC0/IO63NDB5V0 GEC0/IO80NDB5V0

18 EMC_DB[7]/GEB1/IO62PDB5V0 GEB1/IO79PDB5V0

19 EMC_DB[6]/GEB0/IO62NDB5V0 GEB0/IO79NDB5V0

20 EMC_DB[5]/GEA1/IO61PDB5V0 GEA1/IO78PDB5V0

21 EMC_DB[4]/GEA0/IO61NDB5V0 GEA0/IO78NDB5V0

22 VCC VCC

23 GND GND

24 VCCFPGAIOB5 VCCFPGAIOB5

25 EMC_DB[3]/GEC2/IO60PDB5V0 GEC2/IO77PDB5V0

26 EMC_DB[2]/IO60NDB5V0 IO77NDB5V0

27 EMC_DB[1]/GEB2/IO59PDB5V0 GEB2/IO76PDB5V0

28 EMC_DB[0]/GEA2/IO59NDB5V0 GEA2/IO76NDB5V0

29 VCC VCC

30 GND GND

31 GNDRCOSC GNDRCOSC

32 VCCRCOSC VCCRCOSC

33 MSS_RESET_N MSS_RESET_N

34 VCCESRAM VCCESRAM

35 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0

36 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0

Pin Descriptions

5-28 Revision 7

37 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0

38 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0

39 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0

40 GND GND

41 VCCMSSIOB4 VCCMSSIOB4

42 VCC VCC

43 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0

44 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0

45 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0

46 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0

47 MAC_CLK MAC_CLK

48 GNDSDD0 GNDSDD0

49 VCC33SDD0 VCC33SDD0

50 VCC15A VCC15A

51 PCAP PCAP

52 NCAP NCAP

53 VCC33AP VCC33AP

54 VCC33N VCC33N

55 SDD0 SDD0

56 GNDA GNDA

57 GNDAQ GNDAQ

58 ABPS0 ABPS0

59 ABPS1 ABPS1

60 CM0 CM0

61 TM0 TM0

62 GNDTM0 GNDTM0

63 TM1 TM1

64 CM1 CM1

65 ABPS3 ABPS3

66 ABPS2 ABPS2

67 ADC0 ADC0

68 ADC1 ADC1

69 ADC2 ADC2

70 ADC3 ADC3

71 VAREF0 VAREF0

72 GND33ADC0 GND33ADC0

Pin Number

PQ208

A2F200 A2F500

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-29

73 VCC33ADC0 VCC33ADC0

74 GND33ADC0 GND33ADC0

75 VCC15ADC0 VCC15ADC0

76 GND15ADC0 GND15ADC0

77 GND15ADC1 GND15ADC1

78 VCC15ADC1 VCC15ADC1

79 GND33ADC1 GND33ADC1

80 VCC33ADC1 VCC33ADC1

81 GND33ADC1 GND33ADC1

82 VAREF1 VAREF1

83 ADC7 ADC7

84 ADC6 ADC6

85 ADC5 ADC5

86 ADC4 ADC4

87 ABPS6 ABPS6

88 ABPS7 ABPS7

89 CM3 CM3

90 TM3 TM3

91 GNDTM1 GNDTM1

92 TM2 TM2

93 CM2 CM2

94 ABPS5 ABPS5

95 ABPS4 ABPS4

96 GNDAQ GNDAQ

97 GNDA GNDA

98 NC NC

99 GNDVAREF GNDVAREF

100 VAREFOUT VAREFOUT

101 PU_N PU_N

102 VCC33A VCC33A

103 PTEM PTEM

104 PTBASE PTBASE

105 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16

106 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17

107 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18

108 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19

Pin Number

PQ208

A2F200 A2F500

Pin Descriptions

5-30 Revision 7

109 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21

110 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20

111 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29

112 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28

113 VCC VCC

114 VCCMSSIOB2 VCCMSSIOB2

115 GND GND

116 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30

117 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31

118 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22

119 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23

120 GNDENVM GNDENVM

121 VCCENVM VCCENVM

122 JTAGSEL JTAGSEL

123 TCK TCK

124 TDI TDI

125 TMS TMS

126 TDO TDO

127 TRSTB TRSTB

128 VJTAG VJTAG

129 VDDBAT VDDBAT

130 VCCLPXTAL VCCLPXTAL

131 LPXOUT LPXOUT

132 LPXIN LPXIN

133 GNDLPXTAL GNDLPXTAL

134 GNDMAINXTAL GNDMAINXTAL

135 MAINXOUT MAINXOUT

136 MAINXIN MAINXIN

137 VCCMAINXTAL VCCMAINXTAL

138 GND GND

139 VCC VCC

140 VPP VPP

141 VCCFPGAIOB1 VCCFPGAIOB1

142 GDA0/IO31NDB1V0 GDA0/IO40NDB1V0

143 GDA1/IO31PDB1V0 GDA1/IO40PDB1V0

144 GDC0/IO29NSB1V0 GDC0/IO38NSB1V0

Pin Number

PQ208

A2F200 A2F500

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-31

145 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0

146 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0

147 VCCFPGAIOB1 VCCFPGAIOB1

148 GND GND

149 VCC VCC

150 IO25NDB1V0 IO30NDB1V0

151 GCC2/IO25PDB1V0 GBC2/IO30PDB1V0

152 IO23NDB1V0 IO28NDB1V0

153 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0

154 GBC2/IO21PSB1V0 GBB2/IO27NDB1V0

155 GBA2/IO20PSB1V0 GBA2/IO27PDB1V0

156 GNDQ GNDQ

157 GNDQ GNDQ

158 VCCFPGAIOB0 VCCFPGAIOB0

159 GBA1/IO19PDB0V0 GBA1/IO23PDB0V0

160 GBA0/IO19NDB0V0 GBA0/IO23NDB0V0

161 VCCFPGAIOB0 VCCFPGAIOB0

162 GND GND

163 VCC VCC

164 EMC_AB[25]/IO16PDB0V0 IO21PDB0V0

165 EMC_AB[24]/IO16NDB0V0 IO21NDB0V0

166 EMC_AB[23]/IO15PDB0V0 IO20PDB0V0

167 EMC_AB[22]/IO15NDB0V0 IO20NDB0V0

168 EMC_AB[21]/IO14PDB0V0 IO19PDB0V0

169 EMC_AB[20]/IO14NDB0V0 IO19NDB0V0

170 EMC_AB[19]/IO13PDB0V0 IO18PDB0V0

171 EMC_AB[18]/IO13NDB0V0 IO18NDB0V0

172 EMC_AB[17]/IO12PDB0V0 IO17PDB0V0

173 EMC_AB[16]/IO12NDB0V0 IO17NDB0V0

174 VCCFPGAIOB0 VCCFPGAIOB0

175 GND GND

176 VCC VCC

177 EMC_AB[15]/IO11PDB0V0 IO14PDB0V0

178 EMC_AB[14]/IO11NDB0V0 IO14NDB0V0

179 EMC_AB[13]/IO10PDB0V0 IO13PDB0V0

180 EMC_AB[12]/IO10NDB0V0 IO13NDB0V0

Pin Number

PQ208

A2F200 A2F500

Pin Descriptions

5-32 Revision 7

181 EMC_AB[11]/IO09PDB0V0 IO12PDB0V0

182 EMC_AB[10]/IO09NDB0V0 IO12NDB0V0

183 EMC_AB[9]/IO08PDB0V0 IO11PDB0V0

184 EMC_AB[8]/IO08NDB0V0 IO11NDB0V0

185 EMC_AB[7]/IO07PDB0V0 IO10PDB0V0

186 EMC_AB[6]/IO07NDB0V0 IO10NDB0V0

187 VCCFPGAIOB0 VCCFPGAIOB0

188 GND GND

189 VCC VCC

190 EMC_AB[5]/IO06PDB0V0 IO08PDB0V0

191 EMC_AB[4]/IO06NDB0V0 IO08NDB0V0

192 EMC_AB[3]/IO05PDB0V0 GAC1/IO07PDB0V0

193 EMC_AB[2]/IO05NDB0V0 GAC0/IO07NDB0V0

194 EMC_AB[1]/IO04PDB0V0 IO04PDB0V0

195 EMC_AB[0]/IO04NDB0V0 IO04NDB0V0

196 EMC_OEN1_N/IO03PDB0V0 IO03PDB0V0

197 EMC_OEN0_N/IO03NDB0V0 IO03NDB0V0

198 EMC_BYTEN[1]/GAC1/IO02PDB0V0 GAA1/IO02PDB0V0

199 EMC_BYTEN[0]/GAC0/IO02NDB0V0 GAA0/IO02NDB0V0

200 VCCFPGAIOB0 VCCFPGAIOB0

201 GND GND

202 VCC VCC

203 EMC_CS1_N/GAB1/IO01PDB0V0 IO01PDB0V0

204 EMC_CS0_N/GAB0/IO01NDB0V0 IO01NDB0V0

205 EMC_RW_N/GAA1/IO00PDB0V0 IO00PDB0V0

206 EMC_CLK/GAA0/IO00NDB0V0 IO00NDB0V0

207 VCCFPGAIOB0 VCCFPGAIOB0

208 GNDQ GNDQ

Pin Number

PQ208

A2F200 A2F500

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-33

FG256

Note

For Package Manufacturing and Environmental information, visit the Resource Center at

http://www.actel.com/products/solutions/package/docs.aspx.

791113

15 246

101214

A1 Ball Pad Corner

Pin Descriptions

5-34 Revision 7

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

A1 GND GND GND

A2 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A3 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO06NDB0V0

A4 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO06PDB0V0

A5 GND GND GND

A6 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0

A7 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0

A8 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A9 GND GND GND

A10 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO15NDB0V0

A11 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO15PDB0V0

A12 GND GND GND

A13 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0

A14 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0

A15 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

A16 GND GND GND

B1 EMC_DB[15]/IO45PDB5V0 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0

B2 GND GND GND

B3 EMC_BYTEN[1]/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0

B4 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0

B5 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0

B6 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0

B7 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0

B8 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO13PDB0V0

B9 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0

B10 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0

B11 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0

B12 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0

B13 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0

B14 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0

B15 GND GND GND

B16 GNDQ GNDQ GNDQ

C1 EMC_DB[14]/IO45NDB5V0 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0

C2 VCCPLL0 VCCPLL VCCPLL0

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-35

C3 EMC_BYTEN[0]/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0

C4 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

C5 EMC_CS0_N/IO01NDB0V0 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0

C6 EMC_CS1_N/IO01PDB0V0 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0

C7 GND GND GND

C8 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO13NDB0V0

C9 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0

C10 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

C11 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0

C12 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0

C13 GND GND GND

C14 GCC0/IO18NPB0V0 GBA2/IO20PPB1V0 GBA2/IO27PPB1V0

C15 GCB0/IO19NDB0V0 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0

C16 GCB1/IO19PDB0V0 IO23NDB1V0 IO28NDB1V0

D1 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

D2 VCOMPLA0 VCOMPLA VCOMPLA0

D3 GND GND GND

D4 GNDQ GNDQ GNDQ

D5 EMC_CLK/IO00NDB0V0 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0

D6 EMC_RW_N/IO00PDB0V0 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0

D7 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0

D8 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0

D9 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0

D10 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0

D11 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0

D12 GNDQ GNDQ GNDQ

D13 GCC1/IO18PPB0V0 GBB2/IO20NPB1V0 GBB2/IO27NPB1V0

D14 GCA0/IO20NDB0V0 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0

D15 GCA1/IO20PDB0V0 IO24NDB1V0 IO33NDB1V0

D16 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

E1 EMC_DB[13]/IO44PDB5V0 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0

E2 EMC_DB[12]/IO44NDB5V0 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0

E3 GFA2/IO42PDB5V0 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0

E4 EMC_DB[10]/IO43NPB5V0 EMC_DB[10]/IO69NPB5V0 EMC_DB[10]/IO86NPB5V0

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-36 Revision 7

E5 GNDQ GNDQ GNDQ

E6 GND GND GND

E7 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

E8 GND GND GND

E9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

E10 GND GND GND

E11 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0

E12 GCB2/IO22PDB1V0 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0

E13 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

E14 GCA2/IO21PDB1V0 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0

E15 GCC2/IO23PDB1V0 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0

E16 IO23NDB1V0 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0

F1 EMC_DB[9]/IO40PDB5V0 EMC_DB[9]/GEC1/IO63PDB5V0 EMC_DB[9]/GEC1/IO80PDB5V0

F2 GND GND GND

F3 GFB2/IO42NDB5V0 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0

F4 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

F5 EMC_DB[11]/IO43PPB5V0 EMC_DB[11]/IO69PPB5V0 EMC_DB[11]/IO86PPB5V0

F6 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

F7 GND GND GND

F8 VCC VCC VCC

F9 GND GND GND

F10 VCC VCC VCC

F11 GND GND GND

F12 IO22NDB1V0 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0

F13 NC GNDQ GNDQ

F14 IO21NDB1V0 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0

F15 GND GND GND

F16 VCCENVM VCCENVM VCCENVM

G1 EMC_DB[8]/IO40NDB5V0 EMC_DB[8]/GEC0/IO63NDB5V0 EMC_DB[8]/GEC0/IO80NDB5V0

G2 EMC_DB[7]/IO39PDB5V0 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0

G3 EMC_DB[6]/IO39NDB5V0 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0

G4 GFC2/IO41PDB5V0 GFC2/IO67PDB5V0 GFC2/IO84PDB5V0

G5 IO41NDB5V0 IO67NDB5V0 IO84NDB5V0

G6 GND GND GND

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-37

G7 VCC VCC VCC

G8 GND GND GND

G9 VCC VCC VCC

G10 GND GND GND

G11 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1

G12 VPP VPP VPP

G13 TRSTB TRSTB TRSTB

G14 TMS TMS TMS

G15 TCK TCK TCK

G16 GNDENVM GNDENVM GNDENVM

H1 GND GND GND

H2 EMC_DB[5]/IO38PPB5V0 EMC_DB[5]/GEA1/IO61PPB5V0 EMC_DB[5]/GEA1/IO78PPB5V0

H3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

H4 EMC_DB[1]/IO36PDB5V0 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0

H5 EMC_DB[0]/IO36NDB5V0 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0

H6 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5

H7 GND GND GND

H8 VCC VCC VCC

H9 GND GND GND

H10 VCC VCC VCC

H11 GND GND GND

H12 VJTAG VJTAG VJTAG

H13 TDO TDO TDO

H14 TDI TDI TDI

H15 JTAGSEL JTAGSEL JTAGSEL

H16 GND GND GND

J1 EMC_DB[4]/IO38NPB5V0 EMC_DB[4]/GEA0/IO61NPB5V0 EMC_DB[4]/GEA0/IO78NPB5V0

J2 EMC_DB[3]/IO37PDB5V0 EMC_DB[3]/GEC2/IO60PDB5V0 EMC_DB[3]/GEC2/IO77PDB5V0

J3 EMC_DB[2]/IO37NDB5V0 EMC_DB[2]/IO60NDB5V0 EMC_DB[2]/IO77NDB5V0

J4 GNDRCOSC GNDRCOSC GNDRCOSC

J5 NC GNDQ GNDQ

J6 GND GND GND

J7 VCC VCC VCC

J8 GND GND GND

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-38 Revision 7

J9 VCC VCC VCC

J10 GND GND GND

J11 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

J12 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23

J13 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22

J14 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31

J15 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

J16 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30

K1 GPIO_1/IO32RSB4V0 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0

K2 GPIO_0/IO33RSB4V0 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0

K3 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

K4 MSS_RESET_N MSS_RESET_N MSS_RESET_N

K5 VCCRCOSC VCCRCOSC VCCRCOSC

K6 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

K7 GND GND GND

K8 VCC VCC VCC

K9 GND GND GND

K10 VCC VCC VCC

K11 GND GND GND

K12 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21

K13 GND GND GND

K14 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28

K15 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29

K16 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20

L1 GND GND GND

L2 GPIO_2/IO31RSB4V0 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0

L3 GPIO_3/IO30RSB4V0 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0

L4 GPIO_4/IO29RSB4V0 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0

L5 GPIO_9/IO24RSB4V0 MAC_CLK MAC_CLK

L6 GND GND GND

L7 VCC VCC VCC

L8 GND GND GND

L9 VCC VCC VCC

L10 GND GND GND

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-39

L11 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

L12 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24

L13 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27

L14 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26

L15 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25

L16 GND GND GND

M1 GPIO_5/IO28RSB4V0 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0

M2 GPIO_6/IO27RSB4V0 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0

M3 GPIO_7/IO26RSB4V0 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0

M4 GND GND GND

M5 NC ADC3 ADC3

M6 NC GND15ADC0 GND15ADC0

M7 GND33ADC0 GND33ADC1 GND33ADC1

M8 GND33ADC0 GND33ADC1 GND33ADC1

M9 ADC7 ADC4 ADC4

M10 GNDTM0 GNDTM1 GNDTM1

M11 ADC6 TM2 TM2

M12 ADC5 CM2 CM2

M13 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19

M14 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2

M15 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18

M16 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17

N1 GPIO_8/IO25RSB4V0 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0

N2 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4

N3 VCC15A VCC15A VCC15A

N4 VCC33AP VCC33AP VCC33AP

N5 NC ABPS3 ABPS3

N6 ADC4 TM1 TM1

N7 NC GND33ADC0 GND33ADC0

N8 VCC33ADC0 VCC33ADC1 VCC33ADC1

N9 ADC8 ADC5 ADC5

N10 CM0 CM3 CM3

N11 GNDAQ GNDAQ GNDAQ

N12 VAREFOUT VAREFOUT VAREFOUT

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-40 Revision 7

N13 NC GNDSDD1 GNDSDD1

N14 NC VCC33SDD1 VCC33SDD1

N15 GND GND GND

N16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16

P1 GNDSDD0 GNDSDD0 GNDSDD0

P2 VCC33SDD0 VCC33SDD0 VCC33SDD0

P3 VCC33N VCC33N VCC33N

P4 GNDA GNDA GNDA

P5 GNDAQ GNDAQ GNDAQ

P6 NC CM1 CM1

P7 NC ADC2 ADC2

P8 NC VCC15ADC0 VCC15ADC0

P9 ADC9 ADC6 ADC6

P10 TM0 TM3 TM3

P11 GNDA GNDA GNDA

P12 VCCMAINXTAL VCCMAINXTAL VCCMAINXTAL

P13 GNDLPXTAL GNDLPXTAL GNDLPXTAL

P14 VDDBAT VDDBAT VDDBAT

P15 PTEM PTEM PTEM

P16 PTBASE PTBASE PTBASE

R1 PCAP PCAP PCAP

R2 SDD0 SDD0 SDD0

R3 ADC0 ABPS0 ABPS0

R4 ADC3 TM0 TM0

R5 NC ABPS2 ABPS2

R6 NC ADC1 ADC1

R7 NC VCC33ADC0 VCC33ADC0

R8 VCC15ADC0 VCC15ADC1 VCC15ADC1

R9 ADC10 ADC7 ADC7

R10 ABPS1 ABPS7 ABPS7

R11 NC ABPS4 ABPS4

R12 MAINXIN MAINXIN MAINXIN

R13 MAINXOUT MAINXOUT MAINXOUT

R14 LPXIN LPXIN LPXIN

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-41

R15 LPXOUT LPXOUT LPXOUT

R16 VCC33A VCC33A VCC33A

T1 NCAP NCAP NCAP

T2 ADC1 ABPS1 ABPS1

T3 ADC2 CM0 CM0

T4 NC GNDTM0 GNDTM0

T5 NC ADC0 ADC0

T6 NC VAREF0 VAREF0

T7 NC GND33ADC0 GND33ADC0

T8 GND15ADC0 GND15ADC1 GND15ADC1

T9 VAREF0 VAREF1 VAREF1

T10 ABPS0 ABPS6 ABPS6

T11 NC ABPS5 ABPS5

T12 NC SDD1 SDD1

T13 GNDVAREF GNDVAREF GNDVAREF

T14 GNDMAINXTAL GNDMAINXTAL GNDMAINXTAL

T15 VCCLPXTAL VCCLPXTAL VCCLPXTAL

T16 PU_N PU_N PU_N

No.

FG256

A2F060 Function A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the

bank assignment can be different for an I/O, or the function might be available only on a larger density device.

Pin Descriptions

5-42 Revision 7

FG484

Note

For Package Manufacturing and Environmental information, visit the Resource Center at

http://www.actel.com/products/solutions/package/docs.aspx.

12345678910111213141516171819202122

A1 Ball Pad Corner

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-43

Pin Number

FG484

A2F200 Function A2F500 Function

A1 GND GND

A2 NC NC

A3 NC NC

A4 GND GND

A5 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0

A6 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0

A7 GND GND

A8 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO06NDB0V0

A9 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO06PDB0V0

A10 GND GND

A11 NC NC

A12 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0

A13 GND GND

A14 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0

A15 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0

A16 GND GND

A17 NC IO16NDB0V0

A18 NC IO16PDB0V0

A19 GND GND

A20 NC NC

A21 NC NC

A22 GND GND

AA1 GPIO_4/IO43RSB4V0 GPIO_4/IO52RSB4V0

AA2 GPIO_12/IO37RSB4V0 GPIO_12/IO46RSB4V0

AA3 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0

AA4 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0

AA5 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0

AA6 ABPS0 ABPS0

AA7 TM1 TM1

AA8 ADC1 ADC1

AA9 GND15ADC1 GND15ADC1

AA10 GND33ADC1 GND33ADC1

AA11 CM3 CM3

AA12 GNDTM1 GNDTM1

AA13 NC ADC10

AA14 NC ADC9

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-44 Revision 7

AA15 NC GND15ADC2

AA16 MAINXIN MAINXIN

AA17 MAINXOUT MAINXOUT

AA18 LPXIN LPXIN

AA19 LPXOUT LPXOUT

AA20 NC NC

AA21 NC NC

AA22 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26

AB1 GND GND

AB2 GPIO_13/IO36RSB4V0 GPIO_13/IO45RSB4V0

AB3 GPIO_14/IO35RSB4V0 GPIO_14/IO44RSB4V0

AB4 GND GND

AB5 PCAP PCAP

AB6 NCAP NCAP

AB7 ABPS3 ABPS3

AB8 ADC3 ADC3

AB9 GND15ADC0 GND15ADC0

AB10 VCC33ADC1 VCC33ADC1

AB11 VAREF1 VAREF1

AB12 TM2 TM2

AB13 CM2 CM2

AB14 ABPS4 ABPS4

AB15 GNDAQ GNDAQ

AB16 GNDMAINXTAL GNDMAINXTAL

AB17 GNDLPXTAL GNDLPXTAL

AB18 VCCLPXTAL VCCLPXTAL

AB19 VDDBAT VDDBAT

AB20 PTBASE PTBASE

AB21 NC NC

AB22 GND GND

B1 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0

B2 GND GND

B3 NC NC

B4 NC NC

B5 VCCFPGAIOB0 VCCFPGAIOB0

B6 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-45

B7 NC IO04PPB0V0

B8 VCCFPGAIOB0 VCCFPGAIOB0

B9 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0

B10 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0

B11 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0

B12 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0

B13 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO15NDB0V0

B14 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO15PDB0V0

B15 VCCFPGAIOB0 VCCFPGAIOB0

B16 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0

B17 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0

B18 VCCFPGAIOB0 VCCFPGAIOB0

B19 GBB0/IO18NDB0V0 GBB0/IO24NDB0V0

B20 GBB1/IO18PDB0V0 GBB1/IO24PDB0V0

B21 GND GND

B22 GBA2/IO20PDB1V0 GBA2/IO27PDB1V0

C1 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0

C2 NC NC

C3 NC NC

C4 NC IO01NDB0V0

C5 NC IO01PDB0V0

C6 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0

C7 NC IO03PPB0V0

C8 NC IO04NPB0V0

C9 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0

C10 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0

C11 GND GND

C12 VCCFPGAIOB0 VCCFPGAIOB0

C13 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO13NDB0V0

C14 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0

C15 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0

C16 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0

C17 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0

C18 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0

C19 GBA0/IO19NPB0V0 GBA0/IO23NPB0V0

C20 NC NC

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-46 Revision 7

C21 GBC2/IO21PDB1V0 GBC2/IO30PDB1V0

C22 GBB2/IO20NDB1V0 GBB2/IO27NDB1V0

D1 GND GND

D2 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0

D3 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0

D4 NC NC

D5 NC NC

D6 GND GND

D7 NC IO00NPB0V0

D8 NC IO03NPB0V0

D9 GND GND

D10 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0

D11 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0

D12 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0

D13 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO13PDB0V0

D14 GND GND

D15 GBC1/IO17PPB0V0 GBC1/IO22PPB0V0

D16 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0

D17 GND GND

D18 GBA1/IO19PPB0V0 GBA1/IO23PPB0V0

D19 NC NC

D20 NC NC

D21 IO21NDB1V0 IO30NDB1V0

D22 GND GND

E1 GFC2/IO67PPB5V0 GFC2/IO84PPB5V0

E2 VCCFPGAIOB5 VCCFPGAIOB5

E3 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0

E4 GND GND

E5 NC NC

E6 GNDQ GNDQ

E7 VCCFPGAIOB0 VCCFPGAIOB0

E8 NC IO00PPB0V0

E9 NC NC

E10 VCCFPGAIOB0 VCCFPGAIOB0

E11 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0

E12 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-47

E13 VCCFPGAIOB0 VCCFPGAIOB0

E14 GBC0/IO17NPB0V0 GBC0/IO22NPB0V0

E15 NC NC

E16 VCCFPGAIOB0 VCCFPGAIOB0

E17 NC VCOMPLA1

E18 NC IO25NPB1V0

E19 GND GND

E20 NC NC

E21 VCCFPGAIOB1 VCCFPGAIOB1

E22 IO22NDB1V0 IO32NDB1V0

F1 GFB1/IO65PPB5V0 GFB1/IO82PPB5V0

F2 IO67NPB5V0 IO84NPB5V0

F3 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0

F4 EMC_DB[10]/IO69NPB5V0 EMC_DB[10]/IO86NPB5V0

F5 VCCFPGAIOB5 VCCFPGAIOB5

F6 VCCPLL VCCPLL0

F7 VCOMPLA VCOMPLA0

F8 NC NC

F9 NC NC

F10 NC NC

F11 NC NC

F12 NC NC

F13 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0

F14 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0

F15 GNDQ GNDQ

F16 NC VCCPLL1

F17 NC IO25PPB1V0

F18 VCCFPGAIOB1 VCCFPGAIOB1

F19 IO23NDB1V0 IO28NDB1V0

F20 NC IO31PDB1V0

F21 NC IO31NDB1V0

F22 IO22PDB1V0 IO32PDB1V0

G1 GND GND

G2 GFB0/IO65NPB5V0 GFB0/IO82NPB5V0

G3 EMC_DB[9]/GEC1/IO63PDB5V0 EMC_DB[9]/GEC1/IO80PDB5V0

G4 GFC1/IO66PPB5V0 GFC1/IO83PPB5V0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-48 Revision 7

G5 EMC_DB[11]/IO69PPB5V0 EMC_DB[11]/IO86PPB5V0

G6 GNDQ GNDQ

G7 NC NC

G8 GND GND

G9 VCCFPGAIOB0 VCCFPGAIOB0

G10 GND GND

G11 VCCFPGAIOB0 VCCFPGAIOB0

G12 GND GND

G13 VCCFPGAIOB0 VCCFPGAIOB0

G14 GND GND

G15 VCCFPGAIOB0 VCCFPGAIOB0

G16 GNDQ GNDQ

G17 NC IO26PDB1V0

G18 NC IO26NDB1V0

G19 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0

G20 IO24NDB1V0 IO33NDB1V0

G21 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0

G22 GND GND

H1 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0

H2 VCCFPGAIOB5 VCCFPGAIOB5

H3 EMC_DB[8]/GEC0/IO63NDB5V0 EMC_DB[8]/GEC0/IO80NDB5V0

H4 GND GND

H5 GFC0/IO66NPB5V0 GFC0/IO83NPB5V0

H6 GFA1/IO64PDB5V0 GFA1/IO81PDB5V0

H7 GND GND

H8 VCC VCC

H9 GND GND

H10 VCC VCC

H11 GND GND

H12 VCC VCC

H13 GND GND

H14 VCC VCC

H15 GND GND

H16 VCCFPGAIOB1 VCCFPGAIOB1

H17 IO25NDB1V0 IO29NDB1V0

H18 GCC2/IO25PDB1V0 GCC2/IO29PDB1V0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-49

H19 GND GND

H20 GCC0/IO26NPB1V0 GCC0/IO35NPB1V0

H21 VCCFPGAIOB1 VCCFPGAIOB1

H22 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0

J1 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0

J2 EMC_DB[5]/GEA1/IO61PDB5V0 EMC_DB[5]/GEA1/IO78PDB5V0

J3 EMC_DB[4]/GEA0/IO61NDB5V0 EMC_DB[4]/GEA0/IO78NDB5V0

J4 EMC_DB[3]/GEC2/IO60PPB5V0 EMC_DB[3]/GEC2/IO77PPB5V0

J5 VCCFPGAIOB5 VCCFPGAIOB5

J6 GFA0/IO64NDB5V0 GFA0/IO81NDB5V0

J7 VCCFPGAIOB5 VCCFPGAIOB5

J8 GND GND

J9 VCC VCC

J10 GND GND

J11 VCC VCC

J12 GND GND

J13 VCC VCC

J14 GND GND

J15 VCC VCC

J16 GND GND

J17 NC IO37PDB1V0

J18 VCCFPGAIOB1 VCCFPGAIOB1

J19 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0

J20 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0

J21 GCC1/IO26PPB1V0 GCC1/IO35PPB1V0

J22 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0

K1 GND GND

K2 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0

K3 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0

K4 NC IO74PPB5V0

K5 EMC_DB[2]/IO60NPB5V0 EMC_DB[2]/IO77NPB5V0

K6 NC IO75PDB5V0

K7 GND GND

K8 VCC VCC

K9 GND GND

K10 VCC VCC

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-50 Revision 7

K11 GND GND

K12 VCC VCC

K13 GND GND

K14 VCC VCC

K15 GND GND

K16 VCCFPGAIOB1 VCCFPGAIOB1

K17 NC IO37NDB1V0

K18 GDA1/IO31PDB1V0 GDA1/IO40PDB1V0

K19 GDA0/IO31NDB1V0 GDA0/IO40NDB1V0

K20 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0

K21 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0

K22 GND GND

L1 NC IO73PDB5V0

L2 NC IO73NDB5V0

L3 NC IO72PPB5V0

L4 GND GND

L5 NC IO74NPB5V0

L6 NC IO75NDB5V0

L7 VCCFPGAIOB5 VCCFPGAIOB5

L8 GND GND

L9 VCC VCC

L10 GND GND

L11 VCC VCC

L12 GND GND

L13 VCC VCC

L14 GND GND

L15 VCC VCC

L16 GND GND

L17 GNDQ GNDQ

L18 GDA2/IO33NDB1V0 GDA2/IO42NDB1V0

L19 VCCFPGAIOB1 VCCFPGAIOB1

L20 GDB1/IO30PDB1V0 GDB1/IO39PDB1V0

L21 GDB0/IO30NDB1V0 GDB0/IO39NDB1V0

L22 GDC2/IO32PDB1V0 GDC2/IO41PDB1V0

M1 NC IO71PDB5V0

M2 NC IO71NDB5V0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-51

M3 VCCFPGAIOB5 VCCFPGAIOB5

M4 NC IO72NPB5V0

M5 GNDQ GNDQ

M6 NC IO68PDB5V0

M7 GND GND

M8 VCC VCC

M9 GND GND

M10 VCC VCC

M11 GND GND

M12 VCC VCC

M13 GND GND

M14 VCC VCC

M15 GND GND

M16 VCCFPGAIOB1 VCCFPGAIOB1

M17 NC NC

M18 GDB2/IO33PDB1V0 GDB2/IO42PDB1V0

M19 VJTAG VJTAG

M20 GND GND

M21 VPP VPP

M22 IO32NDB1V0 IO41NDB1V0

N1 GND GND

N2 NC IO70PDB5V0

N3 NC IO70NDB5V0

N4 VCCRCOSC VCCRCOSC

N5 VCCFPGAIOB5 VCCFPGAIOB5

N6 NC IO68NDB5V0

N7 VCCFPGAIOB5 VCCFPGAIOB5

N8 GND GND

N9 VCC VCC

N10 GND GND

N11 VCC VCC

N12 GND GND

N13 VCC VCC

N14 GND GND

N15 VCC VCC

N16 NC GND

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-52 Revision 7

N17 NC NC

N18 VCCFPGAIOB1 VCCFPGAIOB1

N19 VCCENVM VCCENVM

N20 GNDENVM GNDENVM

N21 NC NC

N22 GND GND

P1 NC IO69NDB5V0

P2 NC IO69PDB5V0

P3 GNDRCOSC GNDRCOSC

P4 GND GND

P5 NC NC

P6 NC NC

P7 GND GND

P8 VCC VCC

P9 GND GND

P10 VCC VCC

P11 GND GND

P12 VCC VCC

P13 GND GND

P14 VCC VCC

P15 GND GND

P16 VCCFPGAIOB1 VCCFPGAIOB1

P17 TDI TDI

P18 TCK TCK

P19 GND GND

P20 TMS TMS

P21 TDO TDO

P22 TRSTB TRSTB

R1 MSS_RESET_N MSS_RESET_N

R2 VCCFPGAIOB5 VCCFPGAIOB5

R3 GPIO_1/IO46RSB4V0 GPIO_1/IO55RSB4V0

R4 NC NC

R5 NC NC

R6 NC NC

R7 NC NC

R8 GND GND

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-53

R9 VCC VCC

R10 GND GND

R11 VCC VCC

R12 GND GND

R13 VCC VCC

R14 GND GND

R15 VCC VCC

R16 JTAGSEL JTAGSEL

R17 NC NC

R18 NC NC

R19 NC NC

R20 NC NC

R21 VCCFPGAIOB1 VCCFPGAIOB1

R22 NC NC

T1 GND GND

T2 VCCMSSIOB4 VCCMSSIOB4

T3 GPIO_8/IO39RSB4V0 GPIO_8/IO48RSB4V0

T4 GPIO_11/IO57RSB4V0 GPIO_11/IO66RSB4V0

T5 GND GND

T6 MAC_CLK MAC_CLK

T7 VCCMSSIOB4 VCCMSSIOB4

T8 VCC33SDD0 VCC33SDD0

T9 VCC15A VCC15A

T10 GNDAQ GNDAQ

T11 GND33ADC0 GND33ADC0

T12 ADC7 ADC7

T13 NC TM4

T14 NC VAREF2

T15 VAREFOUT VAREFOUT

T16 VCCMSSIOB2 VCCMSSIOB2

T17 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24

T18 GND GND

T19 NC NC

T20 NC NC

T21 VCCMSSIOB2 VCCMSSIOB2

T22 GND GND

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-54 Revision 7

U1 GND GND

U2 GPIO_5/IO42RSB4V0 GPIO_5/IO51RSB4V0

U3 GPIO_10/IO58RSB4V0 GPIO_10/IO67RSB4V0

U4 VCCMSSIOB4 VCCMSSIOB4

U5 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0

U6 NC NC

U7 VCC33AP VCC33AP

U8 VCC33N VCC33N

U9 CM1 CM1

U10 VAREF0 VAREF0

U11 GND33ADC1 GND33ADC1

U12 ADC4 ADC4

U13 NC GNDTM2

U14 NC ADC11

U15 GNDVAREF GNDVAREF

U16 VCC33SDD1 VCC33SDD1

U17 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16

U18 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21

U19 VCCMSSIOB2 VCCMSSIOB2

U20 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31

U21 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23

U22 GND GND

V1 GPIO_0/IO47RSB4V0 GPIO_0/IO56RSB4V0

V2 GPIO_6/IO41RSB4V0 GPIO_6/IO50RSB4V0

V3 GPIO_9/IO38RSB4V0 GPIO_9/IO47RSB4V0

V4 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0

V5 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0

V6 GND GND

V7 SDD0 SDD0

V8 ABPS1 ABPS1

V9 ADC2 ADC2

V10 VCC33ADC0 VCC33ADC0

V11 ADC6 ADC6

V12 ADC5 ADC5

V13 ABPS5 ABPS5

V14 NC ADC8

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 5-55

V15 NC GND33ADC2

V16 NC NC

V17 GND GND

V18 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17

V19 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25

V20 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28

V21 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22

V22 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30

W1 GPIO_2/IO45RSB4V0 GPIO_2/IO54RSB4V0

W2 GPIO_7/IO40RSB4V0 GPIO_7/IO49RSB4V0

W3 GND GND

W4 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0

W5 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0

W6 NC SDD2

W7 GNDA GNDA

W8 TM0 TM0

W9 ABPS2 ABPS2

W10 GND33ADC0 GND33ADC0

W11 VCC15ADC1 VCC15ADC1

W12 ABPS6 ABPS6

W13 NC CM4

W14 NC ABPS9

W15 NC VCC33ADC2

W16 GNDA GNDA

W17 PU_N PU_N

W18 GNDSDD1 GNDSDD1

W19 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18

W20 GND GND

W21 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27

W22 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29

Y1 GPIO_3/IO44RSB4V0 GPIO_3/IO53RSB4V0

Y2 VCCMSSIOB4 VCCMSSIOB4

Y3 GPIO_15/IO34RSB4V0 GPIO_15/IO43RSB4V0

Y4 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0

Y5 VCCMSSIOB4 VCCMSSIOB4

Y6 GNDSDD0 GNDSDD0

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Pin Descriptions

5-56 Revision 7

Y7 CM0 CM0

Y8 GNDTM0 GNDTM0

Y9 ADC0 ADC0

Y10 VCC15ADC0 VCC15ADC0

Y11 ABPS7 ABPS7

Y12 TM3 TM3

Y13 NC ABPS8

Y14 NC GND33ADC2

Y15 NC VCC15ADC2

Y16 VCCMAINXTAL VCCMAINXTAL

Y17 SDD1 SDD1

Y18 PTEM PTEM

Y19 VCC33A VCC33A

Y20 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19

Y21 VCCMSSIOB2 VCCMSSIOB2

Y22 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20

Pin Number

FG484

A2F200 Function A2F500 Function

Note: Shading denotes pins that do not have completely identical functions from density to density. For

example, the bank assignment can be different for an I/O, or the function might be available only

on a larger d ensity device.

Revision 7 6-1

6 – Dat asheet Information

List of Changes

The following table lists critical changes that were made in each revision of the SmartFusion datasheet.

Revision Changes Page

Revision 7

(August 2011)

The title of the datasheet was changed from SmartFusion Intelligent Mixed Signal

FPGAs to SmartFusion Customizable System-on-Chip (cSoC). Terminology

throughout was changed accordingly. The term cSoC defines a category of devices

that include at least FPGA fabric and a processor subsystem of some sort. It can also

include any of the following: analog, SerDes, ASIC blocks, customer specific IP, or

application-specific IP. SmartFusion is Microsemi’s first cSoC (SAR 33071).

N/A

The "SmartFusion cSoC Family Product Table" was revised to remove the note stating

that the A2F060 device is under definition and subject to change (SAR 33070). A note

was added for EMC, stating that it is not available on A2F500 for the PQ208 package

(SAR 33041).

The "SmartFusion cSoC Device Status" table was revised. The status for A2F060

CS288 and FG256 moved from Advance to Preliminary. A2F200 PQ208 and A2F500

PQ208 moved from Advance to Production (SAR 33069).

III

The "Package I/Os: MSS + FPGA I/Os" table was revised. The number of direct analog

inputs for A2F060 packages increased from 6 to 11. The number of MSS I/Os for the

A2F060 FG256 package increased from 25 to 26 (SAR 33070). A note was added

stating that EMC is not available for the A2F500 PQ208 package (SAR 33041).

III

The note associated with the "SmartFusion cSoC System Architecture" diagram was

corrected from "Architecture for A2F500" to "Architecture for A2F200" (SAR 32578).

The Licensed DPA Logo was added to the "Product Ordering Codes" section. The

trademarked Licensed DPA Logo identifies that a product is covered by a DPA

counter-measures license from Cryptography Research (SAR 32151).

The "Security" section and "Secure Programming" section were updated to clarify that

although no existing security measures can give an absolute guarantee, SmartFusion

cSoCs implement the best security available in the industry (SAR 32865).

1-2, 4-9

Storage temperature, TSTG

, and junction temperature, TJ, were added to Ta b le 2 -1 •

Absolute Maximum Ratings (SAR 30863).

2-1

AC/DC characteristics for A2F060 were added to the "SmartFusion DC and Switching

Characteristics" chapter (SAR 33132). The following tables were updated:

Table 2-14 • Different Components Contributing to Dynamic Power Consumption in

SmartFusion cSoCs

Table 2-15 • Different Components Contributing to the Static Power Consumption in

SmartFusion cSoCs

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC

= 1.425 V

Table 2-99 • Analog Sigma-Delta DAC

Table 2-101 • SPI Characteristics

2-12

2-13

2-74

2-84

2-88

Datasheet Information

6-2 Revision 7

Revision 7

(continued)

The following sentence was removed from the "I/O Power-Up and Supply Voltage

Thresholds for Power-On Reset (Commercial and Industrial)" section because it is

incorrect (SAR 31047):

"The many different supplies can power up in any sequence with minimized current

spikes or surges."

2-4

Table 2-8 • Quiescent Supply Current Characteristics was divided into two tables: one

for power supplies configurations and one for quiescent supply current. SoC mode was

added to both tables (SAR 26378) and VCOMPLAx was removed from Ta ble 2- 8 •

Power Supplies Configuration (SAR 29591). Quiescent supply current values were

updated in Table 2-9 • Quiescent Supply Current Characteristics (SAR 33067).

2-10

The "Total Static Power Consumption—PSTAT" section was revised: "NeNVM-BLOCKS *

PDC4" was removed from the equation for PSTAT (SAR 33067).

2-14

Table 2-14 • Different Components Contributing to Dynamic Power Consumption in

SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static

Power Consumption in SmartFusion cSoCs were revised to reflect updates in the

SmartFusion power calculator (SARs 26405, 33067).

2-12,

2-13

Table 2-82 • A2F060 Global Resource is new (SAR 33132). 2-61

Output duty cycle was corrected to 50% in Table 2-83 • Electrical Characteristics of the

RC Oscillator. It was incorrectly noted as 1% previously. Operating current for 3.3

domain was added (SAR 32940).

2-61

Table 2-86 • SmartFusion CCC/PLL Specification was revised to add information and

measurements regarding CCC output peak-to-peak period jitter (SAR 32996).

2-63

The port names in the SRAM "Timing Waveforms", SRAM "Timing Characteristics"

tables, Figure 2-36 • FIFO Reset, and the FIFO "Timing Waveforms" tables were

revised to ensure consistency with the software names (SAR 29991).

2-66 to

2-74

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC

= 1.425 V was revised to correct the maximum frequencies (SAR 32410).

2-74

Table 2-96 • VAREF Stabilization Time was moved to the "SmartFusion DC and

Switching Characteristics" section from the SmartFusion Programmable Analog User’s

Guide because the information is extracted from characterization (SAR 24298).

2-80

The hysteresis section in Table 2-98 • Comparator Performance Specifications was

revised (SAR 33158).

2-83

The "SmartFusion Development Tools" was extensively updated (SAR 33216). 3-1

The text following Table 4-2 • JTAG Pin Descriptions was updated to add information

on control of the JTAGSEL pin. Manual jumpers on the evaluation and development

kits allow manual selection of this function for J-Link and ULINK debuggers (SAR

25592).

4-7

Revision Changes Page

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 6-3

Revision 7

(continued)

Usage instructions, such as how to handle the pin when unused, were added for the

following supply pins (SAR 29769):

"VCC15A"

"VCC15ADC0" through "VCC15ADC2"

"VCC33ADC0" through "VCC33ADC2"

"VCC33AP"

"VCC33ADC2"

"VCCLPXTAL"

"VCCMAINXTAL"

"VCCMSSIOB2"

"VCCPLLx"

"VCCRCOSC"

"VDDBAT"

5-1

through

5-3

The "IO" description was revised to clarify the definitions of u, I/O pair, and w,

differential pair (SAR 31147). Information on configuration of unused I/Os (including

unused MSS I/Os, SAR 26891) was added (SAR 32643).

5-5

Usage instructions were added for the following pins (SAR 29769):

"MSS_RESET_N"

"TCK"

"TMS"

"TRSTB"

"MAC_CLK"

5-7

through

5-11

Package names used in the "Pin Assignment Tables" section were revised to match

standards given in Packag e Mechanical Drawings (SAR 27395).

5-16

The pin assignments for A2F060 for "CS288" and "FG256" have been revised due to

the device status change from advance to preliminary (SAR 33068).

The "CS288" and "FG256" pin assignment sections previously compared functions

between A2F060/A2F200 devices in one table and A2F200/A2F500 in a separate

table. Functions for all three devices have now been combined into one table for each

package (SAR 33072).

5-16,

5-33

The "PQ208" pin table was revised for A2F500 to remove EMC functions, which are

not available for this device/package combination (SAR 33041).

5-26

Revision 6

(March 2011)

The "PQ208" package was added to product tables and "Product Ordering Codes" for

A2F200 and A2F500 (SAR 31005).

III

The "Package I/Os: MSS + FPGA I/Os" table was revised to add the CS288 package

for A2F060 and the PQ208 package for A2F200 and A2F500. A row was added for

shared analog inputs (SAR 31034).

III

The "SmartFusion cSoC Device Status" table was updated (SAR 31084).III

VCCESRAM was added to Table 2-1 • Absolute Maximum Ratings, Tab le 2- 3 •

Recommended Operating Conditions, Table 2-8 • Power Supplies Configuration, and

the "Supply Pins" table (SAR 31035).

2-1, 2-3,

2-10, 5-1

The following note was removed from Table 2-8 • Power Supplies Configuration (SAR

30984):

"Current monitors and temperature monitors should not be used when Power-Down

and/or Sleep mode are required by the application."

2-10

Revision Changes Page

Datasheet Information

6-4 Revision 7

Revision 6

(continued)

Dynamic power values were updated in the following tables. The table subtitles

changed where FPGA I/O banks were involved to note "I/O assigned to EMC I/O pins"

(SAR 30987).

Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software

Settings

Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software

Settings.

2-10

2-11

The "Timing Model" was updated (SAR 30986). 2-19

Values in the timing tables for the following sections were updated. Table subtitles

were updated for FPGA I/O banks to note "I/O assigned to EMC I/O pins" (SAR

30986).

"Overview of I/O Performance" section: Tabl e 2-2 4 , Table 2-25

"Detailed I/O DC Characteristics" section: Table 2-38, Ta ble 2 - 39, Table 2-40,

Table 2-44, Tab l e 2-4 5, Table 2-46, Ta bl e 2-5 0, Table 2-51, Ta b le 2- 52, Table 2-56,

Table 2-57, Table 2-58, Tab l e 2-6 1, Tab le 2- 6 2

"LVDS" section: Ta ble 2- 65

"LVPECL" section: Tab l e 2-6 8

"Global Tree Timing Characteristics" section: Tab le 2 -80 , Tabl e 2-8 1

2-23

2-26

2-40

2-43

2-59

The "PQ208" section and pin tables are new (SAR 31005). 5-26

Global clocks were removed from the A2F060 pin table for the "CS288" and "FG256"

packages, resulting in changed function names for affected pins (SAR 31033).

5-34

Revision 5

(December 2010)

Table 2-2 • Analog Maximum Ratings was revised. The recommended CM[n] pad

voltage (relative to ground) was changed from –11 to –0.3 (SAR 28219).

2-2

Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays was revised

to change the values for 100ºC.

2-9

Power-down and Sleep modes, and all associated notes, were removed from

Table 2-8 • Power Supplies Configuration (SAR 29479). IDC3 and IDC4 were renamed

to IDC1 and IDC2 (SAR 29478). These modes are no longer supported. A note was

added to the table stating that current monitors and temperature monitors should not

be used when Power-down and/or Sleep mode are required by the application.

2-10

The "Power-Down and Sleep Mode Implementation" section was deleted (SAR

29479).

N/A

Values for PAC9 and PAC10 for LVDS and LVPECL were revised in Table 2-10 •

Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings and

Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software

Settings*.

2-10,

2-11

Values for PAC1 through PAC4, PDC1, and PDC2 were added for A2F500 in

Table 2-14 • Different Components Contributing to Dynamic Power Consumption in

SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static

Power Consumption in SmartFusion cSoCs

2-12,

2-13

The equation for "Total Dynamic Power Consumption—PDYN" in "SoC Mode" was

revised to add PMSS. The "Microcontroller Subsystem Dynamic Contribution—PMSS"

section is new (SAR 29462).

2-14,

2-18

Information in Table 2-24 • Summary of I/O Timing Characteristics—Software Default

Settings (applicable to FPGA I/O banks) and Table 2-25 • Summary of I/O Timing

Characteristics—Software Default Settings (applicable to MSS I/O banks) was

updated.

2-25

Revision Changes Page

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 6-5

Revision 5

(continued)

Available values for the Std. speed were added to the timing tables from Table 2-38 •

3.3 V LVTTL / 3.3 V LVCMOS High Slew to Table 2-92 • JTAG 1532 (SAR 29331).

One or more values changed for the –1 speed in tables covering 3.3 V LVCMOS, 2.5 V

LVCMOS, 1.8 V LVCMOS, 1.5 V LVCMOS, Combinatorial Cell Propagation Delays,

and A2F200 Global Resources.

2-31 to

2-75

Table 2-80 • A2F500 Global Resource is new. 2-60

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC

= 1.425 V was revised (SAR 27585).

2-74

The programmable analog specifications tables were revised with updated information. 2-76 to

2-86

Table 4-1 • Supported JTAG Programming Hardware was revised by adding a note to

indicate "planned support" for several of the items in the table.

4-7

The note on JTAGSEL in the "In-System Programming" section was revised to state

that SoftConsole selects the appropriate TAP controller using the CTXSELECT JTAG

command. When using SoftConsole, the state of JTAGSEL is a "don't care" (SAR

29261).

4-7

The "CS288" and "FG256" pin tables for A2F060 are new, comparing the A2F060

function with the A2F200 function (SAR 29353).

5-17

The "Handling When Unused" column was removed from the "FG256" pin table for

A2F200 and A2F500 (SAR 29691).

5-33

Revision 4

(September

2010)

Table 2-8 • Power Supplies Configuration was revised. VCCRCOSC was moved to a

column of its own with new values. VCCENVM was added to the table. Standby mode

for VJTAG and VPP was changed from 0 V to N/A. "Disable" was changed to "Off" in

the eNVM column. The column for RCOSC was deleted.

2-10

The "Power-Down and Sleep Mode Implementation" section was revised to include

VCCROSC.

2-11

Revision 3

(September

2010)

The "I/Os and Operating Voltage" section was revised to list "single 3.3 V power supply

with on-chip 1.5 V regulator" and "external 1.5 V is allowed" (SAR 27663).

The CS288 package was added to the "Package I/Os: MSS + FPGA I/Os" table (SAR

27101), "Product Ordering Codes" table, and "Temperature Grade Offerings" table

(SAR 27044). The number of direct analog inputs for the FG256 package in A2F060

was changed from 8 to 6.

III, VI, VI

Two notes were added to the "SmartFusion cSoC Family Product Table" indicating

limitations for features of the A2F500 device:

Two PLLs are available in CS288 and FG484 (one PL L in FG256).

[ADCs, DACs, SCBs, comparators, current monitors, and bipolar high voltage

monitors are] Available on FG484 only. FG256 and CS288 packages offer the same

programmable analog capabiliti es a s A2F200.

Table cells were merged in rows containing the same values for easier reading (SAR

24748).

Revision Changes Page

Datasheet Information

6-6 Revision 7

Revision 3

(continued)

The security feature option was added to the "Product Ordering Codes" table. VI

In Table 2-3 • Recommended Operating Conditions, the VDDBAT recommended

operating range was changed from "2.97 to 3.63" to "2.7 to 3.63" (SAR 25246).

Recommended operating range was changed to "3.15 to 3.45" for the following

voltages:

VCC33A

VCC33ADCx

VCC33AP

VCC33SDDx

VCCMAINXTAL

VCCLPXTAL

Two notes were added to the table (SAR 27109):

1. The following 3.3 V supplies should be connected together while following proper noise

filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL,

and VCCLPXTAL.

2. The following 1.5 V supplies should be connected together while following proper noise

filtering practices: VCC, VCC15A, and VCC15ADCx.

2-3

In Table 2-3 • Recommended Operating Conditions, the description for VCCLPXTAL

was corrected to change "32 Hz" to "32 KHz" (SAR 27110).

2-3

The "Power Supply Sequencing Requirement" section is new (SAR 27178). 2-4

Table 2-8 • Power Supplies Configuration was revised to change most on/off entries to

voltages. Note 5 was added, stating that "on" means proper voltage is applied. The

values of 6 µA and 16 µA were removed for IDC1 and IDC2 for 3.3 V. A note was

added for IDC1 and IDC2: "Power mode and Sleep mode are consuming higher

current than expected in the current version of silicon. These specifications will be

updated when new version of the silicon is available" (SAR 27926).

2-10

The "Power-Down and Sleep Mode Implementation" section is new (SAR 27178). 2-11

A note was added to Table 2-86 • SmartFusion CCC/PLL Specification, pertaining to

fout_CCC, stating that "one of the CCC outputs (GLA0) is used as an MSS clock and is

limited to 100 MHz (maximum) by software" (SAR 26388).

2-63

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC

= 1.425 V was revised. Values were included for A2F200 and A2F500, for –1 and Std.

speed grades. A note was added to define 6:1:1:1 and 5:1:1:1 (SAR 26166).

2-74

The units were corrected (mV instead of V) for input referred offset voltage, GDEC[1:0]

= 00 in Table 2-97 • ABPS Performance Specifications (SAR 25381).

2-81

The test condition values for operating current (ICC33A, typical) were changed in

Table 2-100 • Voltage Regulator (SAR 26465).

2-86

Figure 2-44 • Typical Output Voltage was revised to add legends for the three curves,

stating the load represented by each (SAR 25247).

2-87

The "SmartFusion Programming" chapter was moved to this document from the

SmartFusion Subsystem Microcontroller User’s Guide (SAR 26542). The "Typical

Programming and Erase Times" section was added to this chapter.

4-7

Figure 4-1 • TRSTB Logic was revised to change 1.5 V to "VJTAG (1.5 V to 3.3 V

nominal)" (SAR 24694).

4-8

Revision Changes Page

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 6-7

Revision 3

(continued)

Two notes were added to the "Supply Pins" table (SAR 27109):

1. The following supplies should be connected together while following proper noise

filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL,

and VCCLPXTAL.

2. The following 1.5 V supplies should be connected together while following proper noise

filtering practices: VCC, VCC15A, and VCC15ADCx.

5-1

The descriptions for the "VCC33N", "NCAP", and "PCAP" pins were revised to include

information on what to do if analog SCB features and SDDs are not used (SAR

26744).

5-2, 5-6,

5-7

Information was added to the "User Pins" table regarding tristating of used and unused

GPIO pins. The IO portion of the table was revised to state that unused I/O pins are

disabled by Libero IDE software and include a weak pull-up resistor (SAR 26890).

Information was added regarding behavior of used I/O pins during power-up.

5-5

The type for "EMC_RW_N" was changed from In/out to Out (SAR 25113). 5-10

A note was added to the "Analog Front-End (AFE)" table stating that unused analog

inputs should be grounded (SAR 26744).

5-12

The "CS288" section is new, with pin tables for A2F200 and A2F500 (SAR 27044). 5-16

The "FG256" pin table was replaced and now includes "Handling When Unused"

information (SAR 27709).

5-33

Revision 2

(May 2010)

Embedded nonvolatile flash memory (eNVM) was changed from "64 to 512 Kbytes" to

"128 to 512 Kbytes" in the "Microcontroller Subsystem (MSS)" section and

"SmartFusion cSoC Family Product Table" (SAR 26005).

I, II

The main oscillator range of values was changed to "32 KHz to 20 MHz" in the

"Microcontroller Subsystem (MSS)" section and the "SmartFusion cSoC Family

Product Table" (SAR 24906).

I, II

The value for tPD was changed from 50 ns to 15 ns for the high-speed voltage

comparators listed in the "Analog Front-End (AFE)" section (SAR 26005).

The number of PLLs for A2F200 was changed from 2 to 1 in the "SmartFusion cSoC

Family Product Table" (SAR 25093).

Values for direct analog input, total analog input, and total I/Os were updated for the

FG256 package, A2F060, in the "Package I/Os: MSS + FPGA I/Os" table. The Max.

column was removed from the table (SAR 26005).

III

The Speed Grade section of the "Product Ordering Codes" table was revised

(SAR 25257).

Revision 1

(March 2010)

The "Product Ordering Codes" table was revised to add "blank" as an option for lead-

free packaging and application (junction temperature range).

Table 2-3 • Recommended Operating Conditions was revised. Ta (ambient

temperature) was replaced with TJ (junction temperature).

2-3

PDC5 was deleted from Table 2-15 • Different Components Contributing to the Static

Power Consumption in SmartFusion cSoCs.

2-13

The formulas in the footnotes for Table 2-29 • I/O Weak Pull-Up/Pull-Down

Resistances were revised.

2-27

The values for input biased current were revised in Table 2-93 • Current Monitor

Performance Specification.

2-76

Revision Changes Page

Datasheet Information

6-8 Revision 7

Revision 0

(March 2010)

The "Analog Front-End (AFE)" section was updated to change the throughput for 10-

bit mode from 600 Ksps to 550 Ksps.

The A2F060 device was added to product information tables. N/A

The "Product Ordering Codes" table was updated to removed Std. speed and add

speed grade 1. Pre-production was removed from the application ordering code

category.

The "SmartFusion cSoC Block Diagram" was revised. IV

The "Datasheet Categories" section was updated, referencing the "SmartFusion cSoC

Block Diagram" table, which is new.

1-4, IV

The "VCCI" parameter was renamed to "VCCxxxxIOBx."

"Advanced I/Os" were renamed to "FPGA I/Os."

Generic pin names that represent multiple pins were standardized with a lower case x

as a placeholder. For example, VAREFx designates VAREF0, VAREF1, and VAREF2.

Modes were renamed as follows:

Operating mode was renamed to SoC mode.

32KHz Active mode was renamed to Standby mode.

Battery mode was renamed to Time Keeping mode.

Table entries have been filled with values as data has become available.

N/A

Table 2-1 • Absolute Maximum Ratings, Table 2-2 • Analog Maximum Ratings, and

Table 2-3 • Recommended Operating Conditions were revised extensively.

2-1

through

2-3

Device names were updated in Table 2-6 • Package Thermal Resistance.2-7

Table 2-8 • Power Supplies Configuration was revised extensively. 2-10

Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software

Settings was revised extensively.

2-11

Removed "Example of Power Calculation." N/A

Table 2-14 • Different Components Contributing to Dynamic Power Consumption in

SmartFusion cSoCs was revised extensively.

2-12

Table 2-15 • Different Components Contributing to the Static Power Consumption in

SmartFusion cSoCs was revised extensively.

2-13

The "Power Calculation Methodology" section was revised. 2-14

Table 2-83 • Electrical Characteristics of the RC Oscillator was revised extensively. 2-61

Table 2-85 • Electrical Characteristics of the Low Power Oscillator was revised

extensively.

2-62

The parameter tRSTBQ was changed to TC2CWRH in Tabl e 2-8 7 • R AM4 K9 .2-69

The 12-bit mode row for integral non-linearity was removed from Table 2-95 • ADC

Specifications. The typical value for 10-bit mode was revised. The table note was

punctuated correctly to make it clear.

2-79

Figure 37-34 • Write Access after Write onto Same Address, Figure 37-34 • Read

Access after Write onto Same Address, and Figure 37-34 • Write Access after Read

onto Same Address were deleted.

N/A

Table 2-100 • Voltage Regulator was revised extensively. 2-86

The "Serial Peripheral Interface (SPI) Characteristics" section and "Inter-Integrated

Circuit (I2C) Characteristics" section are new.

2-88,

2-90

Revision Changes Page

SmartFusion Customizable System-on-Chip (cSoC)

Revision 7 6-9

Revision 0

(continued)

"SmartFusion Development Tools" section was replaced with new content. 3-1

The pin description tables were revised by adding additional pins to reflect the pinout

for A2F500.

5-1

through

5-14

The descriptions for "GNDSDD1" and "VCC33SDD1" were revised. 5-1, 5-2

The description for "VCC33A" was revised. 5-2

The pin tables for the "FG256" and "FG484" were replaced with tables that compare

pin functions across densities for each package.

5-33

Draft B

(December 2009)

The "Digital I/Os" section was renamed to the "I/Os and Operating Voltage" section

and information was added regarding digital and analog VCC.

The "SmartFusion cSoC Family Product Table" and "Package I/Os: MSS + FPGA I/Os"

section were revised.

The terminology for the analog blocks was changed to "programmable analog,"

consisting of two blocks: the analog front-end and analog compute engine. This is

reflected throughout the text and in the "SmartFusion cSoC Block Diagram".

The "Product Ordering Codes" table was revised to add G as an ordering code for

eNVM size.

Timing tables were populated with information that has become available for speed

grade –1.

N/A

All occurrences of the VMV parameter were removed. N/A

The SDD[n] voltage parameter was removed from Table 2-2 • Analog Maximum

Ratings.

2-2

Table 36-4 • Flash Programming Limits – Retention, Storage and Operating

Temperature was replaced with Table 2-4 • FPGA and Embedded Flash Programming,

Storage and Operating Limits.

2-4

The "Thermal Characteristics" section was revised extensively. 2-7

Table 2-8 • Power Supplies Configuration was revised significantly. 2-10

Table 2-14 • Different Components Contributing to Dynamic Power Consumption in

SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static

Power Consumption in SmartFusion cSoCs were updated.

2-12

Figure 2-2 • Timing Model was updated. 2-19

The temperature associated with the reliability for LVTTL/LVCMOS in Table 2-34 • I/O

Input Rise Time, Fall Time, and Related I/O Reliability was changed from 110º to 100º.

2-29

The values in Table 2-78 • Combinatorial Cell Propagation Delays were updated. 2-57

Table 2-85 • Electrical Characteristics of the Low Power Oscillator is new. Table 2-84 •

Electrical Characteristics of the Main Crystal Oscillator was revised.

2-62

Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC

= 1.425 V and Table 2-91 • FlashROM Access Time, Worse Commercial Case

Conditions: TJ = 85°C, VCC = 1.425 V are new.

2-74

The performance tables in the "Programmable Analog Specifications" section were

revised, including new data available. Table 2-99 • Analog Sigma-Delta DAC is new.

2-76

The "256-Pin FBGA" table for A2F200 is new. 4-15

Revision Changes Page

Datasheet Information

6-10 Revision 7

Datasheet Categories