MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1805 to 1990 MHz. This multi-stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
•Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =
130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth
•Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
•Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts
CW Pout.
•Typical Pout @ 1 dB Compression Point ' 30 Watts CW
GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 =
430 mA, Pout = 16 Watts Avg., 1805 - 1880 MHz
Power Gain — 33 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -77 dBc
EVM — 1.5% rms
GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA,
Pout = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz
Power Gain — 31 dB
Power Added Efficiency — 50%
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•On- Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
•Integrated ESD Protection
•225°C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
Document Number: MW7IC2040N
Rev. 1, 11/2009
Freescale Semiconductor
Technical Data
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
1930-1990 MHz, 1805-1880 MHz,
4 W AVG., 28 V
SINGLE W-CDMA, GSM EDGE, GSM
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886- 01
TO-270 WB-16
PLASTIC
MW7IC2040NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2040GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2040NBR1
Figure 1. Functional Block Diagram
Quiescent Current
Temperature Compensation (1)
VDS1
RFin
VGS1
RFout/VDS2
VGS2
VDS1
(Top View)
GND
NC
RFin
VGS1
GND
VDS1
RFout/VDS2
GND
VGS2
VDS1
GND
2
3
4
5
6
7
8
16
15
14
13
12
9
10
11
1
VGS2
VGS1
NC
NC
NC
Figure 2. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
Freescale Semiconductor, Inc., 2009. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate- Source Voltage VGS -0.5, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Input Power Pin 25 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
W-CDMA
(Pout = 4 W Avg., Case Temperature = 73°C) Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
GSM EDGE
(Pout = 16 W Avg., Case Temperature = 76°C) Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
GSM
(Pout = 40 W Avg., Case Temperature = 79°C) Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
RθJC
4.0
1.5
4.1
1.4
3.9
1.3
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1B (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22- C101) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22-A113, IPC/JEDEC J-STD -020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 µAdc)
VGS(th) 1.2 2 2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 130 mAdc)
VGS(Q) — 2.7 — Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 130 mAdc, Measured in Functional Test)
VGG(Q) 13 14.5 16 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955. (continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
Stage 2 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 140 µAdc)
VGS(th) 1.2 2 2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 330 mAdc)
VGS(Q) — 2.8 — Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 330 mAdc, Measured in Functional Test)
VGG(Q) 7 8 9 Vdc
Drain-Source On -Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) 0.2 0.39 1.2 Vdc
Stage 2 — Dynamic Characteristics (1)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 246 — pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg.,
f = 1932.5 MHz, Single -Carrier W- CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 29.5 32 34.5 dB
Power Added Efficiency PAE 16 17.5 —%
Adjacent Channel Power Ratio ACPR —-50 -46 dBc
Input Return Loss IRL —-15 -8 dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, 1930-1990 MHz
Pout @ 1 dB Compression Point, CW P1dB —30 —W
IMD Symmetry @ 22 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMDsym
— 60 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres — 65 — MHz
Quiescent Current Accuracy over Temperature (2)
with 5.6 kΩ Gate Feed Resistors (-30 to 85°C)
∆IQT —±3 — %
Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg. GF— 1.2 — dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 30 W CW
Φ— 0.5 — °
Average Group Delay @ Pout = 30 W CW, f = 1960 MHz Delay — 2.5 — ns
Part- to- Part Insertion Phase Variation @ Pout = 30 W CW,
f = 1960 MHz, Six Sigma Window
∆Φ — 33 — °
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.029 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.003 — dBm/°C
1. Part internally matched both on input and output.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
4
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical W- CDMA Performance — 1800 MHz (In Freescale W-CDMA 1805-1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg., 1805-1880 MHz, Single -Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps — 33.5 — dB
Power Added Efficiency PAE — 16.5 — %
Adjacent Channel Power Ratio ACPR —-50 — dBc
Input Return Loss IRL —-6 — dB
Typical GSM EDGE Performance — 1800 MHz (In Freescale GSM EDGE 1805-1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1805- 1880 MHz EDGE Modulation
Power Gain Gps — 33 — dB
Power Added Efficiency PAE — 35 — %
Error Vector Magnitude EVM — 1.5 — % rms
Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -77 — dBc
Typical GSM EDGE Performance — 1900 MHz (In Freescale GSM EDGE 1930-1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1930- 1990 MHz EDGE Modulation
Power Gain Gps — 30 — dB
Power Added Efficiency PAE — 33 — %
Error Vector Magnitude EVM — 1.5 — % rms
Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -80 — dBc
Typical CW Performance (In Freescale GSM EDGE 1930-1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA,
IDQ2 = 430 mA, Pout = 40 W CW, 1805 - 1880 MHz and 1930- 1990 MHz
Power Gain Gps — 31 — dB
Power Added Efficiency PAE — 50 — %
Input Return Loss IRL — -15 — dB
Pout @ 1 dB Compression Point P1dB — 45 — W
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
5
RF Device Data
Freescale Semiconductor
Z10 0.3419″ x 0.1725″ Microstrip
Z11 0.3419″ x 0.4671″ Microstrip
Z12 0.0830″ x 0.4220″ Microstrip
Z13, Z14 0.0830″ x 0.2855″ Microstrip
Z15 0.0830″ x 0.9030″ Microstrip
Z16 0.0830″ x 0.2499″ Microstrip
PCB Rogers RO4350, 0.030″, εr = 3.5
Z1 0.0826″ x 0.5043″ Microstrip
Z2 0.0826″ x 0.3639″ Microstrip
Z3 0.0826″ x 0.4258″ Microstrip
Z4 0.0826″ x 0.3639″ Microstrip
Z5 0.0826″ x 0.3060″ Microstrip
Z6 0.0826″ x 0.9290″ Microstrip
Z7 0.0600″ x 0.1273″ Microstrip
Z8, Z9 0.0800″ x 1.3684″ Microstrip
Figure 3. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930-1990 MHz
R1
RF
INPUT
VGG1
Z10
RF
OUTPUT
C5
C3
VDD2
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16DUT
Z6
C1
VDD1
Z8
Quiescent Current
Temperature
Compensation
Z1
Z9
Z11 Z12
C11
VGG2
C12 C10 C2
Z15
C17 C6
C13
+
C4 C18 C8 C9
Z7
C14
R2
C16
C15
Z16
Z13
C7
Z14
Z2
Z3
Z4 Z5
NC
NC
G1
G2
NC
NC
G2
G1
Table 6. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930 -1990 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C6, C7, C8, C9, C10, C11 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C12 2.2 µF, 16 V Chip Capacitor C1206C225K4RAC Kemet
C13 470 µF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26 - RH Multicomp
C14, C16 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC
C15 1 pF Chip Capacitor ATC100B1R0BT500XT ATC
C17, C18 1 µF, 50 V Chip Capacitors GRM21BR71H105KA12L Murata
R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay
6
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
Figure 4. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930 -1990 MHz
CUT OUT AREA
C14
R1
R2
C12
C10
C2
C1
C11
C4 C18
C8 C9
C16
C15
C5
C6 C7
C13
C3 C17
MW7IC2040N
Rev. 2
TO272WB−16
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1880
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 5. Single Carrier W-CDMA Broadband Performance
@ Pout = 4 Watts Avg.
−18
−10
−12
−14
−16
27
37
36
35
−52
18
17
16
15
−47
−48
−49
−50
PAE, POWER ADDED
EFFICIENCY (%)
Gps, POWER GAIN (dB)
34
33
32
31
30
29
1900 1920 1940 1960 1980 2000 2020 2040
14
−51
−20
ACPR (dBc)
Figure 6. Power Gain versus Output Power
@ IDQ1 = 130 mA
29
35
1
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vdc
IDQ1 = 130 mA
f = 1960 MHz
33
32
31
10 50
Gps, POWER GAIN (dB)
34 IDQ2 = 495 mA
248 mA
28
30
165 mA
330 mA
413 mA
PAE
VDD = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 130 mA
IDQ2 = 330 mA, Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
Figure 7. Power Gain versus Output Power
@ IDQ2 = 330 mA
28
35
1
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vdc
IDQ2 = 330 mA
f = 1960 MHz
33
32
31
10 50
Gps, POWER GAIN (dB)
34
IDQ1 = 195 mA
30
65 mA
163 mA
29
98 mA
80 mA
Figure 8. Intermodulation Distortion Products
versus Two -Tone Spacing
TWO−TONE SPACING (MHz)
10
−60
−10
−20
−30
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
IM3−U
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
VDD = 28 Vdc, Pout = 22 W (PEP), IDQ1 = 130 mA
IDQ2 = 330 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
8
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
TYPICAL CHARACTERISTICS
Figure 9. Power Gain, ACPR and Power Added
Efficiency versus Output Power
34
Pout, OUTPUT POWER (WATTS)
32
30
28
8
33
31
29
116 24 40
5
65
55
45
35
25
15
PAE, POWER ADDED EFFICIENCY (%)
32
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ACPR
ACPR (dBc)
−70
−10
−20
−30
−50
−40
−60
Gps, POWER GAIN (dB)
Gps
Figure 10. Single-Carrier W-CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
PAE
40
Pout, OUTPUT POWER (WATTS) AVG.
36
32
28
38
34
30
110 60
5
50
45
40
35
25
15
PAE, POWER ADDED EFFICIENCY (%)
VDD = 28 Vdc, IDQ1 = 130 mA
IDQ2 = 330 mA, f = 1960 MHz
ACPR
ACPR (dBc)
−64
−10
−34
−40
−52
−46
−58
Gps, POWER GAIN (dB)
Gps
22
24
26
10
20
30
TC = −30_C
85_C
25_C
−30_C
25_C85_C
−30_C
PAE
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
Figure 11. Broadband Frequency Response
15
40
1400
f, FREQUENCY (MHz)
30
25
1500
GAIN (dB)
35 Gain
1600 1700 1800 1900 2000 2300 2400
IRL
−20
0
−4
−8
−12
−16
IRL (dB)
20
VDD = 28 Vdc
Pout = 25 dBm
IDQ1 = 130 mA
IDQ2 = 330 mA
2100 2200
−28
−22
−16
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
108
1st Stage 2nd Stage
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 45.2% Clipping, Single- Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
1013579
−60
−100
10
(dB)
−20
−30
−40
−50
−70
−80
−90
3.84 MHz
Channel BW
7.2
1.8 5.4
3.6
0
−1.8
−3.6
−5.4
−9 9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
−7.2
−ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
−10
0
10
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
Zo = 50 Ω
f = 2040 MHz
f = 1880 MHz
Zin
Zo = 10 Ω
Zload
f = 2040 MHz
f = 1880 MHz
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg.
f
MHz
Zin
W
Zload
W
1880 42.97 - j25.07 6.10 - j5.01
1900 44.01 - j25.91 5.92 - j4.71
1920 45.14 - j26.72 5.76 - j4.44
1940 46.38 - j27.48 5.62 - j4.21
1960 47.71 - j28.19 5.51 - j4.01
1980 49.16 - j28.83 5.40 - j3.83
2000 50.71 - j29.40 5.27 - j3.71
2020 52.36 - j29.87 5.13 - j3.60
2040 54.12 - j30.23 4.99 - j3.52
Zin = Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 15. Series Equivalent Input and Load Impedance
Zin Zload
Device
Under Test
Output
Matching
Network
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
11
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
17
P3dB = 47.74 dBm (59 W)
Pin, INPUT POWER (dBm)
46
43
18 21
Actual
Ideal
P1dB = 47.06 dBm (51 W)
47
45
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
48
49
50
53
161514131211
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA
Pulsed CW, 10 µsec(on), 10% Duty Cycle, f = 1930 MHz
44
51
52
19 20
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P1dB 49.30 + j8.40 3.60 - j4.50
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V @ 1930 MHz
17
P3dB = 47.88 dBm (61 W)
Pin, INPUT POWER (dBm)
46
18 23
Actual
Ideal
P1dB = 47.37 dBm (55 W)
47
45
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
48
49
50
53
1613
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA
Pulsed CW, 10 µsec(on), 10% Duty Cycle, f = 1990 MHz
51
44
43
1514
52
19 20 21 22
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P1dB 50.0 - j4.90 3.40 - j5.10
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 1990 MHz
12
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
Table 7. Common Source S -Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 430 mA, TC = 25°C, 50 Ohm System)
f
S11 S21 S12 S22
f
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
1500 0.595 -118.5 2.110 -151.3 0.00174 -71.2 0.888 -160.3
1550 0.545 -147.4 3.851 178.9 0.00192 - 86.7 0.876 170.4
1600 0.482 -176.5 7.415 144.7 0.00294 -114.0 0.867 137.1
1650 0.398 156.7 15.620 103.6 0.00445 - 149.9 0.872 94.6
1700 0.332 146.1 37.544 45.5 0.00746 177.5 0.884 29.4
1750 0.542 116.5 62.685 -48.6 0.00940 110.9 0.650 -93.8
1800 0.488 59.6 50.513 - 124.5 0.00642 67.4 0.454 157.6
1850 0.373 8.7 42.562 -178.8 0.00497 40.5 0.419 105.4
1900 0.294 - 46.7 38.690 132.3 0.00438 19.1 0.416 75.9
1950 0.269 -107.0 36.138 85.3 0.00416 - 7.3 0.443 54.0
2000 0.297 -161.3 33.838 39.7 0.00382 -28.5 0.497 31.7
2050 0.342 154.0 32.122 -4.7 0.00350 - 50.7 0.553 8.0
2100 0.389 114.8 30.682 -48.5 0.00342 -69.9 0.602 -16.3
2150 0.420 78.2 29.594 -92.4 0.00354 - 84.6 0.640 -41.0
2200 0.424 41.2 28.734 - 137.7 0.00396 -101.3 0.666 -65.4
2250 0.388 2.9 27.277 175.2 0.00425 -125.1 0.689 - 89.2
2300 0.302 - 37.2 24.568 126.4 0.00483 -153.1 0.720 -113.5
2350 0.188 - 78.8 20.404 78.5 0.00470 174.4 0.753 -138.7
2400 0.066 -123.6 16.281 33.8 0.00415 148.7 0.778 -163.6
2450 0.034 55.1 12.661 - 8.6 0.00388 124.4 0.806 171.0
2500 0.104 12.1 9.738 -48.2 0.00368 106.5 0.826 145.2
2550 0.154 - 17.7 7.577 -85.7 0.00328 77.5 0.842 119.7
2600 0.191 - 44.6 5.905 - 121.7 0.00281 57.2 0.851 94.4
2700 0.250 - 94.4 3.679 169.8 0.00245 37.8 0.856 45.7
2750 0.278 -118.4 2.921 136.7 0.00271 19.5 0.854 22.1
2800 0.309 -142.0 2.330 104.5 0.00373 2.2 0.854 -0.5
2850 0.343 -165.3 1.874 72.7 0.00250 -19.6 0.849 -23.5
2900 0.382 171.0 1.518 41.5 0.00286 -40.7 0.851 -46.0
2950 0.420 147.7 1.226 10.6 0.00313 -71.3 0.850 -68.4
3000 0.459 124.6 0.985 -19.8 0.00262 -98.0 0.851 - 91.1
3050 0.498 102.9 0.782 - 49.0 0.00101 - 108.5 0.847 -113.4
3100 0.542 79.6 0.641 -76.9 0.00279 - 84.9 0.850 - 136.3
3150 0.577 56.4 0.531 - 105.1 0.00504 -110.7 0.856 - 159.8
3200 0.603 33.6 0.439 - 133.3 0.00526 -152.0 0.857 176.4
3250 0.628 11.0 0.363 -161.1 0.00587 - 176.6 0.858 152.0
3300 0.654 -11.9 0.303 171.0 0.00659 160.1 0.857 126.8
3350 0.661 - 35.4 0.250 143.7 0.00909 129.6 0.853 101.4
3400 0.678 - 57.0 0.208 115.4 0.00691 98.1 0.845 74.5
3450 0.692 - 80.2 0.157 88.5 0.00718 80.9 0.745 42.1
3500 0.704 -103.7 0.158 71.5 0.01000 46.8 0.760 43.7
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
13
RF Device Data
Freescale Semiconductor
W-CDMA — 1805-1880 MHz
Z8, Z9 0.0800″ x 1.1139″ Microstrip
Z10 0.3419″ x 0.1725″ Microstrip
Z11 0.3419″ x 0.4671″ Microstrip
Z12 0.0830″ x 0.4220″ Microstrip
Z13 0.0830″ x 0.9030″ Microstrip
Z14 0.0830″ x 0.2499″ Microstrip
PCB Rogers RO4350, 0.030″, εr = 3.5
Z1 0.0826″ x 0.5043″ Microstrip
Z2 0.0826″ x 0.3639″ Microstrip
Z3 0.0826″ x 0.4258″ Microstrip
Z4 0.0826″ x 0.3639″ Microstrip
Z5 0.0826″ x 0.3459″ Microstrip
Z6 0.0826″ x 0.9115″ Microstrip
Z7 0.0600″ x 0.1273″ Microstrip
Figure 18. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1805-1880 MHz
R1
RF
INPUT
VGG1
Z10
RF
OUTPUT
C5
C3
VDD2
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16DUT
Z6
C1
VDD1
Z8
Quiescent Current
Temperature
Compensation
Z1
Z9
Z11 Z12
C11
VGG2
C12 C10 C2
Z13
C6
C13
+
C4 C8 C9
Z7
C14
R2
C16
Z14
C7
Z2
Z3
Z4 Z5
NC
NC
G1
G2
NC
NC
G2
G1
C15
Table 8. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1805 -1880 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C6, C7, C8, C9, C10, C11 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C12 2.2 µF, 16 V Chip Capacitor C1206C225K4RAC Kemet
C13 470 µF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26 - RH Multicomp
C14, C15, C16 1 pF Chip Capacitors ATC100B1R0BT500XT ATC
R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay
14
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
W-CDMA — 1805-1880 MHz
Figure 19. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805-1880 MHz
CUT OUT AREA
C14
R1
R2
C12
C10
C2
C1
C11
C4
C8 C9
C16
C15
C5
C6 C7
C13
C3
MW7IC2040N
Rev. 2
TO272WB−16
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
15
RF Device Data
Freescale Semiconductor
GSM EDGE — 1805-1880 MHz
Z8, Z9 0.0800″ x 1.3354″ Microstrip
Z10 0.3419″ x 0.1725″ Microstrip
Z11 0.3419″ x 0.4671″ Microstrip
Z12 0.0830″ x 0.3575″ Microstrip
Z13 0.0830″ x 0.9675″ Microstrip
Z14 0.0830″ x 0.2499″ Microstrip
PCB Rogers RO4350, 0.030″, εr = 3.5
Z1 0.0826″ x 0.5043″ Microstrip
Z2 0.0826″ x 0.3639″ Microstrip
Z3 0.0826″ x 0.4258″ Microstrip
Z4 0.0826″ x 0.2315″ Microstrip
Z5 0.0826″ x 0.1324″ Microstrip
Z6 0.0826″ x 1.2574″ Microstrip
Z7 0.0600″ x 0.1273″ Microstrip
Figure 20. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1805-1880 MHz
R1
RF
INPUT
VGG1
Z10
RF
OUTPUT
C5
C3
VDD2
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16DUT
Z6
C1
VDD1
Z8
Quiescent Current
Temperature
Compensation
Z1
Z9
Z11 Z12
C11
VGG2
C12 C10 C2
Z13
C6
C13
+
C4 C8 C9
Z7
C14
R2
C16
Z14
C7
Z2
Z3
Z4
NC
NC
G1
G2
NC
NC
G2
G1
Z5 C15
Table 9. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1805-1880 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C6, C7, C8, C9, C10, C11 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C12 2.2 µF, 16 V Chip Capacitor C1206C225K4RAC Kemet
C13 470 µF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26 - RH Multicomp
C14 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C15 1 pF Chip Capacitor ATC100B1R0BT500XT ATC
C16 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay
16
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
GSM EDGE — 1805-1880 MHz
Figure 21. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805-1880 MHz
CUT OUT AREA
C14
R1
R2
C12
C10
C2
C1
C11
C4
C8 C9
C16
C15
C5
C6 C7
C13
C3
MW7IC2040N
Rev. 2
TO272WB−16
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
17
RF Device Data
Freescale Semiconductor
GSM EDGE — 1930-1990 MHz
Z8, Z9 0.0800″ x 1.6274″ Microstrip
Z10 0.3419″ x 0.1725″ Microstrip
Z11 0.3419″ x 0.4671″ Microstrip
Z12 0.0830″ x 0.4685″ Microstrip
Z13 0.0830″ x 0.8565″ Microstrip
Z14 0.0830″ x 0.2499″ Microstrip
PCB Rogers RO4350, 0.030″, εr = 3.5
Z1 0.0826″ x 0.5043″ Microstrip
Z2 0.0826″ x 0.3639″ Microstrip
Z3 0.0826″ x 0.4258″ Microstrip
Z4 0.0826″ x 0.3639″ Microstrip
Z5 0.0826″ x 0.6544″ Microstrip
Z6 0.0826″ x 0.6030″ Microstrip
Z7 0.0600″ x 0.1273″ Microstrip
Figure 22. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930-1990 MHz
R1
RF
INPUT
VGG1
Z10
RF
OUTPUT
C5
C3
VDD2
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16DUT
Z6
C1
VDD1
Z8
Quiescent Current
Temperature
Compensation
Z1
Z9
Z11 Z12
C11
VGG2
C12 C10 C2
Z13
C6
C13
+
C4 C8 C9
Z7
C14
R2
C16
Z14
C7
Z2
Z3
Z4 Z5
NC
NC
G1
G2
NC
NC
G2
G1
C15
Table 10. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930-1990 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C6, C7, C8, C9, C10, C11 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C12 2.2 µF, 16 V Chip Capacitor C1206C225K4RAC Kemet
C13 470 µF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26 - RH Multicomp
C14 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C15, C16 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC
R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay
18
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
GSM EDGE — 1930-1990 MHz
Figure 23. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930-1990 MHz
CUT OUT AREA
C14
R1
R2
C12
C10
C2
C1
C11
C4
C8 C9
C16
C15
C5
C6 C7
C13
C3
MW7IC2040N
Rev. 2
TO272WB−16
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
19
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
20
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
21
RF Device Data
Freescale Semiconductor
22
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
23
RF Device Data
Freescale Semiconductor
24
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
25
RF Device Data
Freescale Semiconductor
26
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
27
RF Device Data
Freescale Semiconductor
28
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
•AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
•AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2009 •Initial Release of Data Sheet
1Nov. 2009 •Updated Human Body Model ESD from Class 1C to 1B to reflect Human Body Model actual test data,
p. 2
•Fig. 13, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single- Carrier Test Signal and
Fig. 14, Single-Carrier W- CDMA Spectrum updated to show the undistorted input test signal, p. 9
•Added AN3789, Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to
Product Documentation, Application Notes, p. 28
•Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 28
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
29
RF Device Data
Freescale Semiconductor
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Document Number: MW7IC2040N
Rev. 1, 11/2009
