
LESHAN RADIO COMPANY, LTD.
M19–1/4
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO – 150 Vdc
Collector–Base Voltage V CBO – 160 Vdc
Emitter–Base V oltage V EBO – 5.0 Vdc
Collector Current — Continuous I C– 500 mAdc
High Voltage Transistor
PNP Silicon
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P D225 mW
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , Tstg
–55 to +150
°C
DEVICE MARKING
MMBT5401LT1=2L
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Ma x Unit
OFF CHARACTERISTICS
Collect or–E mitter B reakdo wn Voltage V (BR)CEO Vdc
(I C = –1.0 mAdc, I B = 0) – 150 —
Collector–Base Breakdown Voltage V (BR)CBO Vdc
(I C = –100 µAdc, I E = 0) – 160 —
Emitter-BAse Breakdown Voltage V(BR)EBO Vdc
(I E= –10µAdc,I C=0) -5.0 —
Collector Cutoff Current I CES
(V CB = –120 Vdc , IE= 0) — – 50 nAdc
(V CB = –120 Vdc , IE= 0, T A=100 ° C) — – 50 µAdc
1. FR–5 = 1.0 x 0 .75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alu min a.
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
MMBT5401LT1