Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 60V
▼ Single Drive Requirement RDS(ON) 80mΩ
▼ Surface Mount Package ID14A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
AP9973GH/J-HF
Halogen-Free Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Parameter Rating
Drain-Source Voltage 60
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 14
Linear Derating Factor 0.22
Storage Temperature Range
Continuous Drain Current, VGS @ 10V 9
Pulsed Drain Current140
Total Power Dissipation 27
-55 to 150
Operating Junction Temperature Range -55 to 150
201008034
Thermal Data
Parameter
1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9973GJ) are
available for low-profile applications. GDSTO-251(J)
GDSTO-252(H)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=9A - - 80 mΩ
VGS=4.5V, ID=6A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=9A - 14 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=9A - 8 13 nC
Qgs Gate-Source Charge VDS=48V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
td(on) Turn-on Delay Time2VDS=30V - 7 - ns
trRise Time ID=9A - 15 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tfFall Time RD=3.3Ω-3-
ns
Ciss Input Capacitance VGS=0V - 720 1150 pF
Coss Output Capacitance VDS=25V - 77 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=14A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=9A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9973GH/J-HF
3.Surface mounted on 1 in2 copper pad of FR4 board
A
P9973GH/J-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
5
10
15
20
25
30
35
40
45
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
TC=25oC10V
7.0V
5.0V
4.5V
65
70
75
80
85
90
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=9A
TC=25oC
0
4
8
12
16
20
24
28
32
01234567
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=9A
0.4
0.8
1.2
1.6
2
2.4
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
AP9973GH/J-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
10
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
0 4 8 12 16
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
VDS =38V
VDS =48V
I
D=9A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
