UWSC – Ultra large-band Wire bonding
Silicon Capacitor – Wire Bondable Vertical
Rev 1.5
Key Features Key Applications
UWSC Capacitors target optical communication
systems (ROSA/TOSA, SONET and all optoelec-
tronics) as well as high speed data systems or
products. The UWSC are designed for DC decou-
pling and bypass applications. The unique techno-
logy of integrated passive devices in silicon deve-
loped by IPDiA, offers high rejection up to
26GHz. The UWSC capacitors are manufactured
with both deep trench and MOS semiconductor
processes to cover low and high capacitance re-
quirements.
The UWSC capacitors provide very high reliabili-
ty and capacitance stability over temperature
(±0.5%) and voltage. They have an extended ope-
rating temperature range from -55 to 150°C . Re-
liable and repeatable performances are obtai-
ned thanks to a fully controlled production line
with high temperature curing (above 900°C) gene-
rating a highly pure oxide. These capacitors are
compatible with standard wire bonding assembly
(ball and wedge). They are RoHS-compliant and
are available with thick gold terminations.
Ultra largeband performa nce up to 26 GHz
Resonance free
Phase stability
Unique capacitance value of 1nF in 0101
Ultra high stability of capacitance value
-
Temperature < ± 0.5% (-55°C to +150°C)
- Voltage < 0.02 %/V
- Negligible aging < 0.001%/1000 hours
Ultra low ESR and ESL
High reliability (FIT < 0.017 parts/billion hours)
Compatible with standard wire bonding assembly
(ball and wedge)*
* Please refer to our Assembly Application Note for more details
Optoelectronics/high-speed data
Trans-Impedance Amplifiers (TIA)
Receive-and- Transmit Optical Sub-As sembly
(ROSA/TOSA)
Synchronous Optical Networking (SONET)
High speed digital logic
Broadband test equipment
Broadband microwave/millimeter wave
Replacement of X7R and NP0
Low profile applications (250 µm, 100 µm on
request)
Rev 1.5
IPDiA Capacitors – UWSC Series
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information
presented in this document does not form part of any quota-
tion or contract, is believed to be accurate and reliable and
may be changed without notice. No liability will be accepted
by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent-
For more information, please visit: http://www.ipdia.com
To cont act us, email t o: sales@ipdia.com
Date of release: 30th January 2015
Document identifier: CL
Electrical Specifications
UWSC Capacitance Range
Termination and Outline
Termination
Can be directly mounted on the PCB using
die bonding and wire bonding.
Bottom electrode in Ti/Ni/Au and top elec-
trode in Ti/Cu/Ni/Au. Other top finishings
available on request (ex: 3µm Al/Si/Cu).
Compatible with standard wire bonding
assembly (ball and wedge).
Package Outline
Packing
Tape and reel, waffle pack, film frame carrie r or raw wafer delivery.
Part number Product description Case Size Thickness
UWSC.xxx Ultra largeband Wire bondable vertical Silicon Capacitor,
from -55 to 150°C, 26GHz with Au termination
935 153 622 410 Ultra largeband Wire bondable vertical Si Cap
1nF, BV>50V 0101 250µm
935 153 620 510 Ultra largeband Wire bondable vertical Si Cap
10nF, BV>50V 0303 250µm
935 153 624 522 Ultra largeband Wire bondable vertical Si Cap
22nF, BV>50V 0504 250µm
935 153 821 510 Ultra largeband Wire bondable vertical Si Cap
10nF, BV>30V 0202 250µm
935 154 622 410 Ultra largeband low profile Wire bondable vertical Si Cap
1 nF, BV>50V 0101 100µm
935 154 620 510 Ultra largeband low profile Wire bondable vertical Si Cap
10nF, BV>50V 0303 100µm
935 154 821 510 Ultra largeband low profile Wire bondable vertical Si Cap
10nF, BV>30V 0202 100µm
Parameters Value
Capacitance range 10pF to 100 nF(**)
Capacitance tolerance ± 15 %(**)
Operating temperature range -55 °C to 150 °C
Storage temperature - 70 °C to 165 °C
Temperature coefficient <±0.5 %, from -55 °C to +150 °C
Breakdown voltage (BV) 11, 30, 50, 150, 450 V(**)
Capacitance variation
versus RVDC 0.02 %/V (from 0 V to RVDC)
Equivalent Serial Inductance
(ESL) typ 6 pH (***) @SRF
Equivalent Serial Resistance
(ESR) typ. 14 m(***)
Insulation resistance 100 G
min @ RVDC & +25°C
Aging Negligible, < 0.001 % / 1000h
Reliability FIT<0.017 parts / billion hours,
Capacitor height Max 250 µm or 100 µm
(**) Other values on request
(***) e.g. 10nF/0303/BV 50V
Fig.1: Capacitance variation vs temperature
(for UWSC and MLCC technologies) Fig.2: Capacitance variation vs DC biasing
voltage (for UWSC and MLCC technologies) Fig.3: 10 nF/0303 UWSC measurement results
(S-parameters in shunt mode)
( mm ) Pad dimension Case size (typ. ±0.01mm)
a b L W T
0101 >0.15 >0.15 0.25(*) 0.25(*)
0.25
(standard
profile) or
0.10 (low
profile)
0201 >0.40 >0.15 0.50 0.25
0202 >0.40 >0.40 0.50 0.50
0303 >0.70 >0.70 0.80 0.80
0404 >0.94 >0.94 1.04 1.04
0503 >1.17 >0.72 1.27 0.82
0504 >1.28 >0.92 1.38 1.02
25°C
Available parts – see table above
For other values, contact your IPDiA sales representative
