

SA601
Low voltage LNA and mixer – 1 GHz
Product data
Supersedes data of 1994 Dec 15 2004 Dec 14
INTEGRATED CIRCUITS
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2
2004 Dec 14
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
–2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.
FEATURES
•Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
•Outstanding LNA noise figure: 1.6dB at 900MHz
•High system power gain: 18dB (LNA + Mixer) at 900MHz
•Excellent gain stability versus temperature and supply voltage
•External >-7dBm LO can be used to drive the mixer
PIN CONFIGURATION
DK Package
1
2
3
4
5
6
7
8
9
10 11
12
13
14
20
19
18
17
16
15
VCC
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
VCC
VCC
LNA GND
LNA IN
GND
GND
GND
MIXER PWRDN
GND
LOIN1
LOIN2
SR00059
Figure 1. Pin Configuration
APPLICATIONS
•900MHz cellular front-end (NADC, GSM, AMPS, TACS)
•900MHz cordless front-end (CT1, CT2)
•900MHz receivers
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP) -40 to +85°CSA601DK SOT266-1
BLOCK DIAGRAM
43215
20 19 18 17 16
761098
15 14 13 12 11
GNDMIXER
PWRDN LO IN1 LO IN2
VCC GND MIXER
IN GND MIXER
OUT GND
LNA
LO
RF IF
GND LNA IN GND
IF
GND LNA
OUT
GNDGND
MIXER
OUT VCC
VCC
BUFFER
SR00058
Figure 2. Block Diagram
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 3
ABSOLUTE MAXIMUM RATINGS3
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage1-0.3 to +6 V
VIN Voltage applied to any other pin -0.3 to (VCC + 0.3) V
PDPower dissipation, TA = 25°C (still air)2
20-Pin Plastic SSOP 980 mW
TJMAX Maximum operating junction temperature 150 °C
PMAX Maximum power input/output +20 dBm
TSTG Storage temperature range –65 to +150 °C
NOTE:
1. T ransients exceeding 8V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA: 20-Pin SSOP = 110°C/W
3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage 2.7 to 5.5 V
TAOperating ambient temperature range -40 to +85 °C
TJOperating junction temperature -40 to +105 °C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNITS
ICC
Su
pp
ly current
7.4
mA
I
CC
Su ly
current
Mixer power-down input low 4.4
mA
VLNA–IN LNA input bias voltage 0.78 V
VLNA–OUT LNA output bias voltage 2.1 V
VMX–IN Mixer RF input bias voltage 0.94 V
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 4
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; LOIN = -7dBm @ 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
-3σTYP +3σ
UNITS
S21 Amplifier gain 881MHz 10 11.5 13 dB
∆S21/∆TGain temperature sensitivity 881MHz 0.003 dB/°C
∆S21/∆fGain frequency variation 800MHz - 1.2GHz 0.01 dB/MHz
S12 Amplifier reverse isolation 881MHz -20 dB
S11 Amplifier input match1881MHz -10 dB
S22 Amplifier output match1881MHz -10 dB
P-1dB Amplifier input 1dB gain compression 881MHz -16 dBm
IP3 Amplifier input third order intercept f2 – f1 = 25kHz, 881MHz -3.5 -2 -0.5 dBm
NF Amplifier noise figure 881MHz 1.3 1.6 1.9 dB
VGCMixer voltage conversion gain: RP = RL = 1kΩfS = 881MHz, fLO = 964MHz,
fIF = 83MHz 18.0 19.5 21.0 dB
PGCMixer power conversion gain: RP = RL = 1kΩfS = 881MHz, fLO = 964MHz,
fIF = 83MHz 5.0 6.5 8.0 dB
S11M Mixer input match1881MHz -10 dB
NFMMixer SSB noise figure 881MHz 8.0 9.5 11.0 dB
P-1dB Mixer input 1dB gain compression 881MHz -13 dBm
IP3MMixer input third order intercept f2 – f1 = 25kHz, 881MHz -3.5 -2 -0.5 dBm
IP2INT Mixer input second order intercept 881MHz 12 dBm
PRFM-IF Mixer RF feedthrough 881MHz -7 dB
PLO-IF LO feedthrough to IF 881MHz -25 dB
PLO-RFM LO to mixer input feedthrough 881MHz -38 dB
PLO-RF LO to LNA input feedthrough 881MHz -40 dB
PLNA–RFM LNA output to mixer input 881MHz -40 dB
PRFM–LO Mixer input to LO feedthrough 881MHz -23 dB
LOIN LO drive level 964MHz -7 dBm
NOTE:
1. Simple L/C elements are needed to achieve specified return loss.
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 5
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Vcc
GND
LNA IN
GND
GND
MIXER PD
GND
LO IN
LO IN
Vcc
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
GND
Vcc
LNA IN C1
C15
L1
56nH
C2
2.7pF
100pF
C11
100pF
C12
2.2pF
LNA OUT
C10
100pF
MIXER IN
C9
4.7pF
C13
100pF
270nH
C6
8.2pF
L = 110 mils
L = 95 mils
w = 15 mils
w = 15 mils
VCC
1µF
100pF
SA601
C4
U1
VCC
J1
C14
100nF
J2
EXT LO
(-7dBm, 964MHz)
J5
L = 190 mils
w = 15 mils
J4
VCC
18pF
2.2k
C8
100nF
MIXER OUT
J3
(50Ω, 83MHz)
C3
100pF 33pF
L3
L2
470nH
R2
C5
C7
L = 535 mils
w = 10 mils
L = 535 mils
w = 10 mils
*SEE MIXER POWER GAIN NOTE BELOW
*
**
** SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK
**
***
*** SEE MIXER FILTER INTERFACE NOTE BELOW
SR00060
R1
100Ω
Figure 3. Application Circuit
CIRCUIT TECHNOLOGY
LNA
Impedance Match: Intrinsic return loss at the input and output ports
is 7dB and 9dB, respectively. With no external matching, the
associated LNA gain is ≈10dB and the noise figure is ≈1.4dB.
However, the return loss can be improved at 881MHz using
suggested L/C elements (Figure 5) as the LNA is unconditionally
stable.
Noise Match: The LNA achieves 1.6dB noise figure at 881MHz
when S11 = -10dB. Further improvements in S11 will slightly
decrease the NF and increase S21.
Temperature Compensation: The LNA has a built-in temperature
compensation scheme to reduce the gain drift to 0.003dB/°C from
–40°C to +85°C.
Supply Voltage Compensation: Unique circuitry provides gain
stabilization over wide supply voltage range. The gain changes no
more than 0.5dB when VCC increases from 3V to 5V.
LO Drive Level: Resistor R1 can be replaced by an inductor of
4.7nH and C3 should be adjusted to achieve a good return loss at
the LO port. Under this condition, the mixer will operate with less
than -10dBm LO drive.
IP3 Performance: C9 between Pin 16 and ground can be removed
to introduce 3dB mismatch loss, while improving the IP3 to +3dBm.
The associated noise figure is 11dB.
Mixer
Input Match: The mixer is configured for maximum gain and best
noise figure. The user needs to supply L/C elements to achieve this
performance.
Power Gain: The gain can be increased by approximately 1.5dB by
placing R2 across C7, instead of C5.
Power Down: The mixer can be disabled by connecting Pin 7 to
ground. When the mixer is disabled, 3mA is saved.
Power Combining: The mixer output circuit features passive
power combining (patent pending) to optimize conversion gain and
noise figure performance without using extra DC current or
degrading the IP3. For IF frequencies significantly different than
83MHz, the component values must be altered accordingly.
Filter Interface: For system integration where a high impedance
filter of 1kΩ is to be cascaded at the mixer IF output, capacitors C5
and C6 need to be changed to 27pF and 1000pF, respectively.
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 6
SR00061
Figure 4. SA601 Demoboard Layout (Not Actual Size)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 7
TYPICAL PERFORMANCE CHARACTERISTICS
CH1 S22 1 U FS 4: 99.543 Ω-85.949 Ω8.937 pF
START 200.000 000 MHz STOP 1200.000 000 MHz
1:
2:
3:
31.48 Ω
-14.217 Ω
900 MHz
44.82 Ω
-30.191 Ω
600 MHz
58.725 Ω
-50.83 Ω
400 MHz
200.000 000 MHz
CH1 S11 1 U FS 4: 63.852 Ω-160.23 Ω4.9269 pF
200.000 000 MHz
START 200.000 000 MHz STOP 1200.000 000 MHz
1:
2:
3:
27.471 Ω
-35.48 Ω
600 MHz
21.286 Ω
-12.381 Ω
900 MHz
36.43 Ω
-70.445 Ω
400 MHz
SR00062
Figure 5. LNA Input and Output Match (at Device Pin)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 8
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1 S12 100mU FS 4: 35.343 mU -76.128 °
200.000 000 MHz
START 200.000 000 MHz STOP 1200.000 000 MHz
1:
2:
3:
89.561mU
61.127 °
900 MHz
74.51mU
64.608 °
600 MHz
58.082mU
67.162 °
400 MHz
CH1 S21 7 U FS 4: 6.2863 U -150.58 °
200.000 000 MHz
START 200.000 000 MHz STOP 1200.000 000 MHz
1:
2:
3:
3.2504U
91.219 °
900 MHz
4.6877U
112.03 °
600 MHz
5.3895U
130.33 °
400 MHz
SR00063
Figure 6. LNA Transmission and Isolation Characteristics (at Device Pin)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 9
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1 S11 1 U FS 4: 10.867Ω1.6426Ω1.2543 nH
200.000 000 MHz
START 200.000 000 MHz STOP 1200.000 000 MHz
1: 6.7168 Ω
9.5952 Ω
900 MHz
SR00064
Figure 7. Mixer RF Input Match (at Device Pin)
Table 1. Typical LNA and Mixer S-Parameters
LNA Mixer
f S11 S22 S21 S12 S11
200MHz 63.852Ω – j 160.23Ω99.543Ω – j 85.949Ω6.2863U ∠ 150.58°35.343mU ∠ 76.128°10.867Ω + j 1.6426Ω
300MHz 44.879Ω – j 101.69Ω73.387Ω – j 67.707Ω5.8096U ∠ 140.47°47.946mU ∠ 71.169°10.4Ω + j 3.4609Ω
400MHz 36.43Ω – j 70.445Ω58.725Ω – j 50.83Ω5.3895U ∠ 130.33°58.082mU ∠ 67.162°10.067Ω + j 4.897Ω
500MHz 30.395Ω – j 48.393Ω49.928Ω – j 38.813Ω5.0428U ∠ 120.5°66.44mU ∠ 66.388°9.394Ω + j 6.0142Ω
600MHz 27.471Ω – j 35.48Ω44.82Ω – j 30.191Ω4.6877U ∠ 112.03 °74.51mU ∠ 64.608°8.8945Ω + j 7.2227Ω
700MHz 24.428Ω – j 25Ω39.268Ω – j 24.502Ω4.2409U ∠ 104.44°82.235mU ∠ 65.002°8.1353Ω + j 8.1597Ω
800MHz 22.434Ω – j 17.255Ω34.664Ω – j 18.59Ω3.7491U ∠ 97.765°86.582mU ∠ 62.743°7.976Ω + j 9.1958Ω
900MHz 21.286Ω – j 12.381Ω31.48Ω – j 14.217Ω3.2504U ∠ 91.219°89.561mU ∠ 61.127°6.7168Ω + j 9.5952Ω
1000MHz 20.261Ω – j 8.7109Ω27.887Ω – j 10.77Ω2.8785U ∠ 84.957°95.135mU ∠ 60.539°6.2393Ω + j 10.271Ω
1100MHz 19.718Ω – j 6.252Ω25.741Ω – j 8.2607 Ω2.5752U ∠ 82.893°97.348mU ∠ 62.202°6.0791Ω + j 10.571Ω
1200MHz 19.101Ω – j 4.9316Ω23.584Ω – j 6.2715Ω2.1386U ∠ 80.257°96.558mU ∠ 61.563°5.8185Ω + j 10.288Ω
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 10
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1 S11 log MAG 2 dB/ REF -5 dB
-40°C
85°C
25°C
START 800.000 000 MHz STOP 1 200. 000 000 MHz
Mixer RF Input Match vs. Frequency
(VCC = 3V)
CH1 S12 log MAG 5 dB/ REF -10 dB
START 800.000 000 MHz STOP 1 200. 000 000 MHz
CH1 S21 log MAG 1 dB/ REF 10 dB
START 800.000 000 MHz STOP 1 200. 000 000 MHz
CH1 S 22 log MAG 3 dB/ REF -10 dB
START 800.000 000 MHz STOP 1 200. 000 000 MHz
CH1 S11 log MAG 1 dB/ REF -10 dB
START 800.000 000 MHz STOP 1 200. 000 000 MHz
-40°C
85°C
25°C
LNA Gain (S21) vs. Frequency
(VCC = 3V)
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
LNA Isolation (S12) vs. Frequency
(VCC = 3V)
LNA Input Match (S11) vs. Frequency
(VCC = 3V) LNA Output Match (S22) vs. Frequency
(VCC = 3V)
9
Icc (mA)
VCC (V)
ICC vs. VCC and Temperature
2.5 3 3.5 4 4.5 5 5.5
8.5
8
7.5
7
6.5
6
5.5
5
–40°C
25°C
+85°C
SR00065
Figure 8. Typical Performance Characteristics (cont.)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
7
6.5
6
5.5
52.5 3 3.5 4 4.5 5 5.5
GAIN (dB)
VCC (V)
Mixer Gain @ 83MHz vs. VCC and Temperature 3
GAIN (dB)
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
2
1
0
–1
–2
–3
–4
–5
–6
–7
Mixer IP3 @ 83MHz vs. VCC and Temperature
–40°C
25°C
+85°C
–40°C
25°C
+85°C
+70°C
12
NF (dB)
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Mixer NF @ 83MHz vs. VCC and Temperature
11.5
11
10.5
10
9.5
9
–40°C
25°C
+85°C
–36
dB
VCC (V)
LO to Mixer in Feedthrough vs. VCC
–37
–38
–39
–40 2.5 3 3.5 4 4.5 5 5.5
–36
dB
VCC (V)
LO to LNA Input Feedthrough vs. VCC
–37
–38
–39
–40 2.5 3 3.5 4 4.5 5 5.5
–20
dB
VCC (V)
Mixer Input to LO Feedthrough vs. VCC
2.5 3 3.5 4 4.5 5 5.5
–21
–22
–23
–24
–25
SR00066
Figure 9. Typical Performance Characteristics (cont.)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 12
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
–23
dB
VCC (V)
LO Feedthrough to IF vs. VCC
2.5 3 3.5 4 4.5 5 5.5
–24
–25
–26
–27
–5
dB
VCC (V)
Mixer RF Feedthrough vs. VCC
2.5 3 3.5 4 4.5 5 5.5
–6
–7
–8
–38
dB
VCC (V)
LNA Output to Mixer Input vs. VCC
2.5 3 3.5 4 4.5 5 5.5
–39
–40
–41
–42
12.50
GAIN (dB)
VCC (V)
LNA Gain vs. VCC and Temperature
2.5 3 3.5 4 4.5 5 5.5
12.00
11.50
11.00
10.50
–40°C
25°C
+85°C
4.00
dB
VCC (V)
LNA IP3 vs. VCC and Temperature
2.5 3 3.5 4 4.5 5 5.5
2.00
0.00
–2.00
–4.00
–6.00
–8.00
–10.00
–40°C
25°C
+85°C
2.50
dB
VCC (V)
LNA NF vs. VCC and Temperature
2.5 3 3.5 4 4.5 5 5.5
2.00
1.50
1.00
0.50
0.00
–40°C
25°C
+85°C
SR00067
Figure 10. Typical Performance Characteristics (cont.)
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 13
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 14
REVISION HISTORY
Rev Date Description
_2 20041214 Product data (9397 750 14447); supersedes SA601 of 15 Dec 1994.
Modifications:
•Added package outline and legal information
_1 19941215 Product specification
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14 15
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2004
All rights reserved. Printed in U.S.A.
Date of release: 12-04
Document order number: 9397 750 14447


Data sheet status[1]
Objective data
Preliminary data
Product data
Product
status[2] [3]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Level
I
II
III