1
TM HCTS08MS
Radiation Hardened
Quad 2-Input AND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T1 4
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
Funct ion al Diag ram
TRUTH TABLE
INPUTS OUTPUTS
An Bn Yn
LLL
LHL
HLL
HHH
NOTE: L = Logic Level Low, H = Logic level High
A1
B1
Y1
A2
B2
Y2
GND
VCC
B4
A4
Y4
B3
A3
Y3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1A1
B1
Y1
A2
B2
Y2
GND
VCC
B4
A4
Y4
B3
A3
Y3
An
Bn
Yn
(1, 4, 9, 12)
(2, 5, 10, 13)
(3, 6, 8, 11)
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets : >100 MEV-cm2/mg
• Single Ev ent Upset (SEU) I m mun it y < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivabili ty: >1 x 1012 Rads (Si)/Sec
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range : -55oC to +12 5oC
• Signif icant Power Reduction Compa red to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V
- VIH = VCC/2
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS08MS is a Radiation Hardened Quad 2-Input
AND Gate. A high on both i nputs force th e output to a High sta te.
The HCTS08MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation harden ed, high-speed, CMOS/SOS Logic Fami ly.
The HCTS08MS is supplied in a 14 lead Ceramic Flatpack
Package (K suffix) or a 14 lead SBDIP Package (D suffix).
Ordering Information
PART
NUMBER TEMPERATURE
RANGE SCREENING
LEVEL PACKAGE
HCTS08DMSR -55oC to +125oC Intersil Class
S Equivalent 14 Lead SBDI P
HCTS08KMSR -55oC to +125oC Intersil Class
S Equivalent 14 Lead Ceramic
Flatpack
HCTS08D/
Sample +25oC Sample 14 Lead SBDI P
HCTS08K/
Sample +25oC Sample 14 Lead Ceramic
Flatpack
HCTS08HMSR +25oCDie Die
Spec Number 518842
Fil e Num ber 2136.2
August 1995
DB NA
2
Specifications HCTS08MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide
heat sinking o r der ate line arly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. T his is a stress rating only. Ex posure to absolute maxi mum rating condit ions for extended per iods may affe ct devic e reliability. The c onditions liste d
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Ope rat i ng Condi tio ns
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA). . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS SYMBOL (NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Quie scent C urrent ICC VC C = 5. 5V,
VIN = VCC or GND 1+25
oC-10µA
2, 3 +125oC, -55oC-200µA
Output C urr ent
(Sink) IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V , VI L = 0V 1+25
oC4.8-mA
2, 3 +125oC, -55oC4.0-mA
Output C urr ent
(Source) IOH VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1+25
oC-4.8-mA
2, 3 +125oC, -55oC-4.0-mA
Output Vol tage Low VOL VC C = 4. 5V, VIH = 2.25V ,
IOL = 50 µA, V IL = 0 .8V 1, 2, 3 + 25 oC, +12 5oC, -55oC- 0.1 V
VCC = 5.5V, VIH = 2.75V,
IOL = 50 µA, V IL = 0 .8V 1, 2, 3 + 25 oC, +12 5oC, -55oC- 0.1 V
Output Vol tage High VOH VCC = 4.5V, VIH = 2. 25V,
IOH = -50µA, VIL = 0.8V 1, 2, 3 + 25 oC, +12 5oC, -55oCVCC
-0.1 -V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V 1, 2, 3 + 25 oC, +12 5oC, -55oCVCC
-0.1 -V
Input Leakag e
Current IIN VCC = 5.5V, VIN = VCC or
GND 1+25
oC -0.5 +0.5 µA
2, 3 +125oC, -55oC -5.0 +5.0 µA
Noise Immunity
Func tio n al Test FN VCC = 4.5V,
VIH = 2.25V,
VIL = 0.8V, (Note 2)
7, 8A, 8 B +25 oC, +125oC, -55oC4.0 0.5 -
NOTES:
1. All vol tages reference to d evice GN D.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Num ber 518842
3
Specifications HCTS08MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL (N OTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns
10, 11 +125oC, -55oC 2 20 ns
TPLH VCC = 4.5V 9 +25oC 2 20 ns
10, 11 +125oC, -55oC 2 22 ns
NOTES:
1. All vol tages r eferenced to device GND.
2. AC m easurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3 ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Capaci tance P ower
Dissipation CPD VCC = 5.0V, f = 1MHz 1 +25oC - 45 pF
1+125
oC, -55oC - 80 pF
Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF
1+125
oC - 10 pF
Output Trans ition
Time TTHL
TTLH VCC = 4.5V 1 +25oC - 15 ns
1+125
oC - 22 ns
NOTE:
1. The parameter s listed in Table 3 ar e contr olled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS SYMBOL (N OTES 1, 2)
CONDITIONS TEMPERATURE
200K RAD L IMITS
UNITSMIN MAX
Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC-0.2mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V +25oC4.0-mA
Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V +25oC-4.0-mA
Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD,
IOL = 50µA
+25oC-0.1V
Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD,
IOH = - 50 µA
+25oCVCC
-0.1 -V
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC -5.0 +5.0 µA
Spec Num ber 518842
4
Specifications HCTS08MS
Noise Immunity
Functional Test FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V at 200K RAD, (Note 3) +25oC ---
In p ut to Output TPHL VCC = 4.5V +2 5 oC 2 20 ns
TPLH VCC = 4.5V +25oC 2 22 ns
NOTES:
1. All voltages re ferenced to device GND .
2. AC m easurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3 ns, VIL = GND, VIH = 3V.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER GROUP B
SUBGROUP DELTA LIMIT
ICC 5 3µA
IOL/IOH 5 -15% of 0 Hour
TABLE 6. APPLICABL E SUBGROUPS
COMFORMANCE GROUP MIL-STD-883 METHOD
GROUP A SUBGROUPS
TESTED RECORDED
In iti al Te st 100% 500 4 1, 7, 9 1 (Not e 2)
Interim Test 100% 5004 1, 7, 9, ∆1, ∆ (Note 2)
PDA 100% 50 04 1, 7, ∆
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A (Note 1) Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, ∆1, 2, 3, ∆ (Note 2)
Subgroup B6 Sample 5005 1, 7, 9
Gr ou p D Sam p le 5005 1, 7, 9
NOTES:
1. Alt ernate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS METHOD
TEST READ AND RECORD
PRE RAD POST RAD PRE RAD POST RAD
Group E S ubgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1)
NOTE:
1. Except FN test whic h will be per formed 100% Go/No-Go.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS SYMBOL (N OTES 1, 2)
CONDITIONS TEMPERATURE
200K RAD L IMITS
UNITSMIN MAX
Spec Num ber 518842
5
Specifications HCTS08MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0. 5V
OSCILLATOR
50kHz 25kHz
STATIC BURN-IN I TEST CONDITI ONS (Note 1)
3, 6, 8, 11 1, 2, 4, 5, 7, 9, 10, 12,
13 -14--
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 6, 8, 11 7 - 1, 2, 4, 5, 9, 10, 12,
13, 14 --
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
- 7 3, 6 , 8, 11 14 1, 2, 4, 5, 9, 10,
12, 13 -
NOTES:
1. Each pin except VCC and GND will have a res istor of 10KΩ ± 5% for static bu rn-in.
2. Each pin except VCC and GND will have a res istor of 1KΩ ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN GROUND VCC = 5V ± 0.5V
3, 6, 8, 11 7 1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC a nd GND will have a resistor of 47 KΩ ± 5% for irradi ation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Num ber 518842
6
HCTS08MS
Spec Num ber 518842
Intersil Space Level Product Flo w - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Inclu des SEM)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Reject s
100% Nond estructive Bond Pul l, Method 2023
Sample - Wir e Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Cons tant Accelerat ion, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC m in. , Method 1015
100% Interim Electrical Test 1 ( T1)
100% Delta Calculation (T0-T1)
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC m in. , Method 1015
100% Interim Electrical Test 2 ( T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Interim Electrical Test 3 ( T3)
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Me thod 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Metho d 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. A l terna t e Grou p A tes ting ma y be per fo r m ed as all ow e d by MIL-S TD - 883, Me thod 500 5 .
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). I ncludes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
7
HCTS08MS
AC Timing Diagrams
FIGURE 1
AC VOLTA GE LEVELS
PARAMETER HCTS UNITS
VCC 4.50 V
VIH 3.00 V
VS 1.30 V
VIL 0 V
GND 0 V
VS INPUT
OUTPUT
OUTPUT
TTHL
80%
20%
80%
20%
VIH
VIL
VOH
VOL
VOH
VOL
TPLH TPHL
VS
TTLH
AC Load Circuit
FIGURE 2
DUT TEST
CL RL
POINT
CL = 50pF
RL = 500Ω
Spec Num ber 518842
8
All Intersil U.S. product s are manufactured, assembled and tested uti lizin g ISO9000 qua li ty systems.
Intersil Corp oration’s quality certifications can be viewed at www.inter sil. com/design/qua li ty
Intersil products are s old by description only. Intersil Corporation res er ves the right to make changes in cir cuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no respons ibility is as sumed by Intersil or its subsid iaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For inform ation regardi ng Int ersil Corporati on and its products, see www.i ntersil.com
HCTS08MS
Die Charact eris tics
DIE DIMENSIONS:
87 x 88 mils
2.20 x 2.24mm
METALLIZATION:
Type: SiAl
Meta l Thi ckness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCTS08MS
VCC B4
B1 (2)
Y1 (3)
A2 (4)
B2 (5)
(12) A4
(11) Y4
(10) B3
(9) A3
(6) (7) (8)
Y2 GND Y3
A1
(1) (14) (13)
Spec Num ber 518842
