1
Rectifier Device Data
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical to the
system.
•Small Compact Surface Mountable Package with J–Bend Leads
•Rectangular Package for Automated Handling
•Highly Stable Oxide Passivated Junction
•Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C)
•Excellent Ability to Withstand Reverse Avalanche Energy Transients
•Guardring for Stress Protection
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 217 mg (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
•Shipped in 16 mm Tape and Reel, 2500 units per reel
•Polarity: Notch in Plastic Body Indicates Cathode Lead
•Marking: B34, B36
MAXIMUM RATINGS
Rating Symbol MBRS340T3 MBRS360T3 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 60 Volts
Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C
4.0 @ TL = 90°CAmps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 Amps
Operating Junction Temperature TJ– 65 to +125 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead RθJL 11 11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 A, TJ = 25°C) VF0.525 0.740 Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR2.0
20 0.5
20
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBRS340T3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
40, 60 VOLTS
CASE 403–03
Motorola Preferred Device
Rev 2
2Rectifier Device Data
iF, INSTANTANEOUS FORWARD CURRENT (AMPS
1
0.5
0.2
0.1
0.05
3
2
10.1 0.2 0.3 0.4 0.5 0.6 0.7
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
IR, REVERSE CURRENT (mA)
100
10
1
0.1
0.01 0 4 8 1216202428323640
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
TJ = 125
°
C
25
°
C
IF(AV), A VERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
050 60 70 80 90 100 110 120 130
TC, CASE TEMPERATURE (
°
C)
SQUARE
WAVE
DC
TJ = 100
°
C
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
5
4
3
2
1
0012345
I
F(AV), AVERAGE FORW ARD CURRENT (AMPS)
Figure 3. Power Dissipation
= 20
10
5
DC
IPK
IAV
SQUARE
WAVE
RATED VOLTAGE APPLIED
R
θ
JC = 10.5
°
C/W
TJ = 125
°
C
C, CAPACITANCE (pF)
400
300
200
100
004 8121620242832
V
R
, REVERSE VOLTAGE (VOLTS)
TYPICAL CAPACITANCE AT 0 V = 480 pF
20
2
0.2
0.02
50
5
0.5
0.05
36 40
500
40 140
9
10
(CAPACITIVE LOAD)
0.7
0.07
0.3
0.8 0.9 1.1
TC = 100
°
C
TC = 25
°
C
100
°
C
75
°
C
1.2 1.3 1.40
Figure 4. Current Derating (Case) Figure 5. Typical Capacitance
TJ = 25
°
C
3
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 403–03
ISSUE B
S
A
DB
J
PK H
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.260 0.280 6.60 7.11
B0.220 0.240 5.59 6.10
C0.075 0.095 1.90 2.41
D0.115 0.121 2.92 3.07
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.305 0.320 7.75 8.13
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
4Rectifier Device Data
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