AH215 1 Watt, High Linearity InGaP HBT Amplifier Applications Final stage amplifiers for Repeaters Mobile Infrastructure SOIC-8 SMT Package Product Features 400 - 2300 MHz 18 dB Gain @ 900 MHz +31.5 dBm P1dB +46 dBm Output IP3 +5V Single Positive Supply Lead-free/green/RoHS-compliant SOIC-8 Package General Description The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as CDMA, W-CDMA, and LTE where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Block Diagram Pin Configuration Pin # Symbol 1 2, 4, 5 3 6, 7 8 Backside Paddle Vref N/C RF_In RF_Out / Vcc Vbias RF/DC GND Ordering Information Part No. Description AH215-S8G AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140 1 Watt, High IP3 InGaP HBT Amp 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel. Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 1 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power -65 to +150 C +26 dBm +8 V 900 mA 5W Vcc Icq TJ (for >106 hours MTTF) Operational Temperature +4.75 Operation of this device outside the parameter ranges given above may cause permanent damage. Typ Max Units +5 +5.25 450 -40 200 +85 V mA o C o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: Vcc = +5 V, Icq = 450 mA, T = 25 C, F= 2140 MHz, in a tuned applications circuit. Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure WCDMA Channel Power @ -45 dBc ACPR, 2140 MHz Quiescent Current, Icq Thermal Resistance, junction to case, jc Conditions Min Typical 400 Max Units 2300 MHz MHz dB dB dB dBm dBm dB dBm mA 2140 10 See Note 1. +29 +43.8 See Note 2. 400 11 18 8 +31.5 +45 6.3 +23 450 500 33 C / W Notes: 1. OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz The suppression on the largest IM3 product is used to calculate OIP3 using a 2:1 rule. 2. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (i.e. total device current typically will be 461 mA.) Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 2 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Device Characterization Data Gain vs Frequency 40 Output Smith Chart Input Smith Chart 1 30 Gain (dB) 5.05 GHz 0.8 Maximum Stable Gain (GMAX) 5.05 GHz 0.6 20 0.4 0.2 10 0 GHz -0.2 0 0.25 0.5 0.75 1 -1 0.05 -0.75 -0.5-0.25 Insertion Gain (S21) 0 -0.4 -0.6 10 0 0.5 1 1.5 2 2.5 0.05 GHz -0.8 Frequency (GHz) -1 Notes: Insertion Gain (S21) is for the unmatched device in a 50 ohm system. In a circuit tuned for a particular frequency band, higher gain can be achieved up to the Maximum Stable Gain (GMAX). S-Parameter Data Vcc = +5 V, Icq = 450 mA, T = 25 C, unmatched 50 Ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82 -177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68 24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09 122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99 -40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37 17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22 -1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92 -130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Reference Design 869-960 MHz (AH215-S8PCB900) Notes: 1. 2. 3. 4. 5. 6. The primary RF microstrip line is 50 . All passive components are 0603 size unless otherwise specified. Observe component value tolerances when specified Zero ohm jumpers may be replaced with metal trace in user applications. Place component C8 at marker `A' on the PC Board or center of component placed at 0.7 deg @ 0.9 GHz away from U1 pin `3' Place component C9 between marker `8' and `9' on the PC Board or center of component placed at 18 deg @ 0.9 GHz away from U1 pins `6' and `7' Bill of Material Ref Des Value Description U1 Manufacturer Part Number 1 Watt High Linearity InGaP Amp TriQuint AH215-S8G C1, C2 22 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C3 100 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C4 C5, C7 10 F 1000 pF Cap, Chip, 6032, 25 V, 20%, TANT various Cap, Chip, 0603, 50 V, 5%, X7R various C6 10 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C8, C9 6.8 pF Cap, Chip, 0603, 50 V, 0.1 pF, Accu-P AVX 06035J6R8BBSTR L1 33 nH Ind, Coil Wound, 1008, 5%, Ceramic Core Coilcraft 1008HQ-33NXJLC R1 51 Res, Chip, 0603, 1%, 1/16 W various R2 22 Res, Chip, 0603, 5%, 1/16 W various R3 51 Res, Chip, 0603, 5%, 1/16 W various R4 0 Res, Chip, 0603, 5%, 1/16 W various 5.6 V Zener Diode various D1 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Typical Performance 869-960 MHz (AH215-S8PCB900) Frequency MHz 869 900 960 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 +15 dBm / tone, 1 MHz spacing Channel Power @-45 dBc ACLR, WCDMA, 3GPP Noise Figure Quiescent Current, Icq Device / Supply Voltage dB dB dB dBm dBm dBm dB mA V 18 13 7 +31 +46 +25.5 7.0 18 13 7 +31 +46 +25.5 7.0 450 +5 17.5 10 6 +30 +47 +25.5 7.0 +85 C +25 C - 40 C -5 18 S11 (dB) 17 -10 860 880 900 920 Frequency (MHz) 940 -20 860 960 900 920 Frequency (MHz) 940 860 960 P1dB (dBm) +85 C +25 C - 40 C 4 2 31 30 880 900 920 Frequency (MHz) 940 960 880 900 920 Frequency (MHz) 940 19 44 46 44 22 24 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. 26 46 44 42 40 40 +25 C, +15 dBm/tone 48 42 42 27 OIP3 vs. Frequency OIP3 (dBm) OIP3 (dBm) 46 18 20 Pout / tone (dBm) 21 23 25 Output Channel Power (dBm) 50 48 16 -60 960 freq. = 900 MHz, 901 MHz, +15 dBm/tone 50 48 14 +85 C +25 C - 40 C -55 OIP3 vs. Temperature OIP3 vs. Pout / tone 12 -50 -70 860 freq. = 900 MHz, 901 MHz, +25 C 50 960 -65 28 860 940 -45 +85 C +25 C - 40 C 29 0 900 920 Frequency (MHz) IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz -40 32 6 880 ACPR vs. Channel Power P1dB vs. Frequency 33 8 OIP3 (dBm) 880 Noise Figure vs. Frequency 10 -10 -15 -20 15 +85 C +25 C - 40 C -5 +85 C +25 C - 40 C -15 16 S22 vs. Frequency 0 ACPR (dBc) S21 (dB) 19 NF (dB) S11 vs. Frequency 0 S22 (dB) S21 vs. Frequency 20 40 -40 -15 10 35 Temperature (C) - 5 of 13 - 60 85 860 880 900 920 Frequency (MHz) 940 960 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Reference Design 1930-1990 MHz (AH215-S8PCB1960) Vcc=+5V C4 + D1 10uF 6032 5.6V R4 C7 0 C5 R1 51 1% 1000pF R2 22 1000pF R3 J1 RF Input C1 6. 7. 2 3 22pF 4 C2 22pF Notes: 1. 2. 3. 4. 5. 1 51 8 U1 AH215 7 L1 18nH 1008 C6 10pF C3 J2 100pF RF Output 6 5 C8 C10 0.8pF 0.8pF The primary RF microstrip line is 50 . All passive components are 0603 size unless otherwise specified. Observe component value tolerances when specified. Zero ohm jumpers may be replaced with metal trace in user applications. Place component C8 at marker `A' on the PC Board or center of component placed at 1.6 deg @ 1.9 GHz away from U1 pin `3' Place component C9 at marker `1' on the PC Board or center of component placed at 1.6 deg @ 1.9 GHz away from U1 pins `6' and `7' Place component C10 at marker `6' on the PC Board or center of component placed at 34 deg @ 1.9 GHz away from U1 pins `6' and `7' Bill of Material Ref Des Value Description U1 C1, C2 22 pF Manufacturer Part Number 1 Watt High Linearity InGaP Amp TriQuint Cap, Chip, 0603, 50 V, 5%, NPO/COG various AH215-S8G C3 100 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C4 10 F Cap, Chip, 6032, 25 V, 20%, TANT various C5, C7 1000 pF Cap, Chip, 0603, 50 V, 5%, X7R various C6 10 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C8, C10 0.8 pF Cap, Chip, 0603, 50 V, 0.05 pF, Accu-P AVX 06035J0R8ABSTR C9 3.3 pF Cap, Chip, 0603, 50 V, 0.05 pF, Accu-P AVX 06035J3R3ABSTR L1 18 nH Ind, Coil Wound, 1008, 5%, Ceramic Core Coilcraft R1 51 Res, Chip, 0603, 1%, 1/16 W various R2 22 Res, Chip, 0603, 5%, 1/16 W various R3 51 Res, Chip, 0603, 5%, 1/16 W various R4 0 Res, Chip, 0603, 5%, 1/16 W various 5.6 V Zener Diode various D1 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 6 of 13 - 1008HQ-18NXJLC Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Typical Performance 1930-1990 MHz (AH215-S8PCB1960) Frequency MHz 1930 1960 1990 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 +15 dBm / tone, 1 MHz spacing Channel Power @-45 dBc ACLR, WCDMA, 3GPP Noise Figure Quiescent Current, Icq Device / Supply Voltage dB dB dB dBm dBm dBm dB mA V 12.1 10 11 +32 +46 +25.5 5.5 12 11 10 +32 +46 +25.5 5.5 450 +5 11.8 11 9 +31.5 +46 +25.5 5.5 S21 vs. Frequency S11 (dB) 13 12 -10 -15 10 1930 1940 1950 1960 1970 Frequency (MHz) 1980 -20 1930 1990 1940 +85 C +25 C - 40 C 1980 6 4 2 -20 1930 1990 1940 1950 1960 1970 Frequency (MHz) 1980 32 30 1950 1960 1970 Frequency (MHz) 1980 19 21 23 25 Output Channel Power (dBm) 46 44 20 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. 22 46 44 42 40 40 +25 C, +15 dBm/tone 48 42 42 27 OIP3 vs. Frequency 50 OIP3 (dBm) OIP3 (dBm) 44 16 18 Pout / tone(dBm) -60 OIP3 vs. Temperature 46 14 -55 1990 48 12 +85 C +25 C - 40 C -50 -70 1940 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 50 48 1990 -65 OIP3 vs. Pout / tone freq. = 1960 MHz, 1961 MHz, +25 C 50 1980 -45 +85 C +25 C - 40 C 26 1930 1990 1950 1960 1970 Frequency (MHz) ACPR vs. Channel Power 28 0 1930 1940 IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz -40 34 P1dB (dBm) NF (dB) 1950 1960 1970 Frequency (MHz) P1dB vs. Frequency 36 8 -10 -15 Noise Figure vs. Frequency 10 +85 C +25 C - 40 C -5 ACPR (dBc) S21 (dB) +85 C +25 C - 40 C -5 11 OIP3 (dBm) 0 S22 (dB) +85 C +25 C - 40 C 14 S22 vs. Frequency S11 vs. Frequency 0 15 -40 -15 10 35 Temperature (C) - 7 of 13 - 60 85 40 1930 1940 1950 1960 1970 Frequency (MHz) 1980 1990 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Reference Design 2110-2170 MHz (AH215-S8PCB2140) Vcc=+5V C4 + D1 10uF 6032 5.6V R4 C7 0 C5 R1 51 1% 1000pF R2 22 1000pF R3 J1 RF Input C1 2 3 22pF 4 C2 8 U1 AH215 7 L1 18nH 1008 10pF C3 J2 100pF RF Output 6 5 C9 2.4pF 22pF Notes: 1. 2. 3. 4. 5. 1 51 C6 The primary RF microstrip line is 50 . All passive components are 0603 size unless otherwise specified. Observe component value tolerances when specified. Zero ohm jumpers may be replaced with metal trace in user applications. Place component C9 at marker `2' on the PC Board or center of component placed at 7.5 deg @ 2.14 GHz away from U1 pins `6' and `7' Bill of Material Ref Des Value Description U1 Manufacturer Part Number 1 Watt High Linearity InGaP Amp TriQuint C1, C2 22 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C3 100 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C4 10 F Cap, Chip, 6032, 25 V, 20%, TANT various C5, C7 1000 pF Cap, Chip, 0603, 50 V, 5%, X7R various C6 10 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C9 2.4 pF Cap, Chip, 0603, 50 V, 0.05 pF, Accu-P AVX L1 18 nH Ind, Coil Wound, 1008, 5%, Ceramic Core Coilcraft R1 51 Res, Chip, 0603, 1%, 1/16 W various R2 22 Res, Chip, 0603, 5%, 1/16 W various R3 51 Res, Chip, 0603, 5%, 1/16 W various R4 0 Res, Chip, 0603, 5%, 1/16 W various 5.6 V Zener Diode various D1 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 8 of 13 - AH215-S8G 06035J2R4ABSTR 1008HQ-18NXJLC Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Typical Performance 2110-2170 MHz (AH215-S8PCB2140) Frequency MHz 2110 2140 2170 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 +15 dBm / tone, 1 MHz spacing Channel Power @-45 dBc ACLR, WCDMA, 3GPP Noise Figure Quiescent Current, Icq Device / Supply Voltage dB dB dB dBm dBm dBm dB mA V 11.3 16 8 +31.5 +45.5 +23 6.1 11.4 18 8 +31.5 +45 +23 6.2 450 +5 11.3 20 8 +31.5 +45 +23 6.3 S21 vs. Frequency +85 C +25 C - 40 C 12 11 +85 C +25 C - 40 C -10 -15 2120 2130 2140 2150 Frequency (MHz) 2160 -25 2110 2170 2120 8 34 6 +85 C +25 C - 40 C 4 2 2160 -20 2110 2170 2120 2130 2140 2150 Frequency (MHz) 2160 30 2130 2140 2150 Frequency (MHz) 2160 19 20 20 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. 22 23 24 +25 C, +15 dBm/tone 50 48 46 44 46 44 42 40 40 21 22 Output Channel Power (dBm) OIP3 vs. Frequency freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 42 42 16 18 Pout / tone(dBm) -60 2170 OIP3 (dBm) OIP3 (dBm) 44 14 +85 C +25 C - 40 C -55 -70 2120 48 12 -50 OIP3 vs. Temperature 46 2170 -65 50 48 2160 -45 32 OIP3 vs. Pout / tone freq. = 2140 MHz, 2141 MHz, +25 C 50 2130 2140 2150 Frequency (MHz) ACPR vs. Channel Power +85 C +25 C - 40 C 26 2110 2170 2120 3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz -40 28 0 2110 OIP3 (dBm) 2130 2140 2150 Frequency (MHz) P1dB vs. Frequency 36 P1dB (dBm) NF (dB) Noise Figure vs. Frequency 10 -10 -15 ACPR (dBc) 9 2110 +85 C +25 C - 40 C -5 -20 10 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) 13 S11 vs. Frequency 0 S22 (dB) 14 -40 -15 10 35 Temperature (C) - 9 of 13 - 60 85 40 2110 2120 2130 2140 2150 Frequency (MHz) 2160 2170 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Applications Note: Reduced Bias Configurations The AH215 can be configured to be operated with lower bias current by varying the bias-adjust resistor R1. The recommended circuit configurations shown previously in this data sheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH215-S8PCB2140 Performance Data R1 (ohms) 51 68 100 130 180 Icq (mA) 450 400 350 300 250 Pdiss (W) 2.25 2.00 1.75 1.50 1.25 P1dB (dBm) +31.0 +30.9 +30.8 +30.6 +30.5 OIP3 (dBm) +47.1 +46.4 +46.4 +45.5 +43.6 2.14GHz Gain vs. Output Power 11.5 2.14GHz OIP3 vs. Output Power per Tone 50 11 45 10 OIP3 (dBm) Gain (dB) 10.5 Idq=450mA 'Class A' Idq=400mA 9.5 Idq=350mA 9 40 Idq=450mA 'Class A' Idq=400mA 35 Idq=350mA Idq=300mA Idq=300mA Idq=250mA 8.5 16 18 20 22 24 26 Output Power (dBm) 28 30 32 W-CDMA ACLR vs. Output Channel Power 10 24 Idq=350mA PAE (%) Idq=350mA ACLR (dBc) 22 Idq=400mA Idq=400mA -45 14 16 18 20 Power Out per Tone (dBm) Idq=450mA 'Class A' Idq=450mA 'Class A' -40 12 CW PAE vs. Output Power 100 3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset -35 Idq=250mA 30 Idq=300mA Idq=250mA -50 Idq=300mA Idq=250mA 10 -55 -60 1 -65 12 14 16 18 20 W-CDMA Channel Power Out (dBm) Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. 22 24 - 10 of 13 16 18 20 22 24 26 28 CW Tone Power Out (dBm) 30 32 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Pin Description Pin Symbol 1 Vref 2, 4, 5 N/C 3 6, 7 8 Backside Paddle RF Input RF Output Description Sets reference current No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. RF Input. DC Voltage present, blocking cap required RF Output and DC Supply Voltage Vbias Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. Use recommended via pattern shown on page 12 and ensure good solder attach for RF/DC GND optimum thermal and electrical performance. Applications Information PC Board Layout Circuit Board Material: Top RF layer is .014" Getek, 4 total layers (0.062" thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as place markers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH215 Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 11 of 13 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. The component will be marked with an "AH215G" designator with an alphanumeric lot code on the top surface of the package. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. 2. 3. 4. 5. 6. 7. 8. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contacts the heat sink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 12 of 13 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) AH215 1 Watt, High Linearity InGaP HBT Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 ESD Rating: Value: Test: Standard: Class 1B Passes 500 V to < 1000 V. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating Level 2 at +260 C convection reflow The part is rated Moisture Sensitivity Level 3 at 260C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: sjcpplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 07/14/11 (c) 2011 TriQuint Semiconductor, Inc. - 13 of 13 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)