LD 274
GaAs-IR-Lumineszenzdiode
GaAs Infrare d Emitter
2001-02-22 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Gehäusegleich mit SFH 484
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
LD 274 Q62703-Q1031 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes Epoxy-
Gießharz, Anschlüsse im 2.54-mm-Raster (1/10’’),
Kathodenkennzeic hnung: Kürzerer Lötspieß, flat
5 mm LED package (T 1 3/4), grey colored epoxy resin
lens, solder tabs lead spacing 2.54 mm (1/10’’), cathode
marking: shorter solder lead, flat
LD 274-3 Q62703-Q1820
Features
•Very highly efficient GaAs-LED
•High reliability
•Spectral match with silicon photodetectors
•Same package as SFH 484
Applications
•IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
•Remote control for steady and v arying intensi ty
•Sensor technology
•Discrete interrupters
2001-02-22 2
LD 274
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 55 nm
Abstrahlwinkel
Half angle ϕ± 10 Grad
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top H4.9 …5.5 mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching tim es, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.5 µs
LD 274
2001-02-22 3
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlaßspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.30 (≤ 1.5)
1.90 (≤ 2.5) V
V
Sperrstrom, VR = 5 V
Reverse current IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe15 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI – 0.55 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-02-22 4
LD 274
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
LD 274 LD 274-21) LD 274-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
50
–50
100 80
–mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µsIe typ. 350 600 800 mW/sr
1) Nur auf Anfrage lieferbar.
1) Availab le only on request.
LD 274
2001-02-22 5
Relati ve Sp ectral Emission
Ιrel = f (λ)
Forward Cu rrent
IF = f (VF), single pulse, tp = 20 µs
Radiation Characteristics,
Ιrel = f (ϕ)
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHR01041
F
F
I
1
1
10
0
10
-1
10
10
-2
A
1.5 2 2.5 3 3.5 4 V 4.5
max.
typ.
OHR01882
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TC ≤ 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
Ι
OHR01038
F
-1
10
10
0
1
10
2
10
10
-2 -1
10
0
10 A 10
1
Ι
e
Ι
e
(100 mA)
t
OHR00860
p
-5
10
10 2
Ι
F
10 3
10 4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
tp
T
Ι
F
tp
T
D=
5
mA
-4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10s
D=
Max. Permissible Forward Current
IF = f (TA)
OHR00883
0
F
I
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
2001-02-22 6
LD 274
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
Cathode
GEXY6051
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047)
Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
