SQJA68EP
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S17-0807-Rev. A, 22-May-17 1Document Number: 75561
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Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) at VGS = 10 V 0.0920
RDS(on) (Ω) at VGS = 4.5 V 0.1170
ID (A) per leg 14
Configuration Single
Package PowerPAK SO-8L
PowerPAK® SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
N-Channel MOSFET
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C ID
14
A
TC = 125 °C 8
Continuous source current (diode conduction) aIS15
Pulsed drain current bIDM 17
Single pulse avalanche current L = 0.1 mH IAS 9
Single pulse avalanche energy EAS 4mJ
Maximum power dissipation bTC = 25 °C PD
45 W
TC = 125 °C 15
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount cRthJA 70 °C/W
Junction-to-case (drain) RthJC 3.3
SQJA68EP
www.vishay.com Vishay Siliconix
S17-0807-Rev. A, 22-May-17 2Document Number: 75561
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 100 V - - 1
μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150
On-state drain current a I
D(on) V
GS = 10 V VDS ≥ 5 V 6 - - A
Drain-source on-state resistance a R
DS(on)
VGS = 10 V ID = 4 A - 0.0765 0.0920
Ω
VGS = 4.5 V ID = 3 A - 0.0967 0.1170
VGS = 10 V ID = 4 A, TJ = 125 °C - - 0.1620
VGS = 10 V ID = 4 A, TJ = 175 °C - - 0.2056
Forward transconductance bgfs VDS = 15 V, ID = 4 A - 8.6 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 212 280
pF Output capacitance Coss - 118 160
Reverse transfer capacitance Crss -1520
Total gate charge cQg
VGS = 10 V VDS = 50 V, ID = 3 A
-4.78
nC Gate-source charge cQgs -0.8-
Gate-drain charge cQgd -1.3-
Gate resistance Rgf = 1 MHz 2 4 6 Ω
Turn-on delay time ctd(on)
VDD = 50 V, RL = 33.3 Ω
ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω
-915
ns
Rise time ctr -510
Turn-off delay time ctd(off) -1530
Fall time ctf -510
Source-Drain Diode Ratings and Characteristics b
Pulsed current aISM --17A
Forward voltage VSD IF = 4 A, VGS = 0 V - 0.88 1.2 V
Body diode reverse recovery time trr
IF = 3 A, di/dt = 100 A/μs
-2960ns
Body diode reverse recovery charge Qrr - 27 55 nC
Reverse recovery fall time ta-19-ns
Reverse recovery rise time tb-10-ns
Body diode peak reverse recovery current IRM(REC) --1.9- A
SQJA68EP
www.vishay.com Vishay Siliconix
S17-0807-Rev. A, 22-May-17 3Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
4
8
12
16
20
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5 V
VGS = 4 V
VGS = 3 V
10
100
1000
10000
0
3
6
9
12
15
0246810
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
80
160
240
320
400
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
3
6
9
12
15
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0.00
0.06
0.12
0.18
0.24
0.30
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
012345
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 3 A
VDS = 50 V
SQJA68EP
www.vishay.com Vishay Siliconix
S17-0807-Rev. A, 22-May-17 4Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-250 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 4 A VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.0
0.1
0.2
0.3
0.4
0.5
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
105
109
113
117
121
125
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQJA68EP
www.vishay.com Vishay Siliconix
S17-0807-Rev. A, 22-May-17 5Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =70°C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
SQJA68EP
www.vishay.com Vishay Siliconix
S17-0807-Rev. A, 22-May-17 6Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75561.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 1Document Number: 66934
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PowerPAK® SO-8L Case Outline 2
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 2Document Number: 66934
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6044
PAD Pattern
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Revision: 07-Feb-12 1Document Number: 63818
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RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
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Revision: 01-Jan-2021 1Document Number: 91000
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