MRF9085LR3 - Freescale Semiconductor

MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3MOTOROLA RF DEVICE DATA

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of these devices make them ideal for large–s ignal, common–source amplifier

applications in 26 volt base station equipment.

•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA

IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 20 Watts

Power Gain — 17.9 dB

Efficiency — 28%

Adjacent Channel Power —

750 kHz: –45.0 dBc @ 30 kHz BW

1.98 MHz: –60.0 dBc @ 30 kHz BW

•Internally Matched, Controlled Q, for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW

Output Power

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDSS 65 Vdc

Gate–Source Voltage VGS –0.5, +15 Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD250

1.43 Watts

W/°C

Storage Temperature Range Tstg –65 to +150 °C

Operating Junction Temperature TJ200 °C

ESD PROTECTION CHARACTERISTICS

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model MRF9085

MRF9085SR3/MRF9085LSR3 M2 (Minimum)

M1 (Minimum)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 0.7 °C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this documen

by MRF9085/

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EMICONDUCTOR TECHNICAL DATA

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880 MHz, 90 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

CASE 465–06, STYLE 1

NI–780)

MRF9085

CASE 465A–06, STYLE 1

NI–780S

MRF9085SR3, MRF9085LSR3

 Motorola, Inc. 2003

REV 8

MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3

2 MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.0 — 4.0 Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S

DYNAMIC CHARACTERISTICS (1)

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 73 — pF

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.9 — pF

(1) Part is internally input matched. (continued)

MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)

Two–Tone Common–Source Amplifier Power Gain