Order this document by MRF9085/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 20 Watts Power Gain -- 17.9 dB Efficiency -- 28% Adjacent Channel Power -- 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780) MRF9085 CASE 465A-06, STYLE 1 NI-780S MRF9085SR3, MRF9085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF9085 MRF9085SR3/MRF9085LSR3 M2 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 8.0 -- S Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 73 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.9 -- pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) (1) Part is internally input matched. MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 2 (continued) MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 36 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL -- -21 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Gps -- 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) -- 40.0 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IRL -- -16 -- dB Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) P1dB -- 105 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Gps -- 17.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) -- 51 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) No Degradation In Output Power P1dB -- 105 -- W (1) These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. MOTOROLA RF DEVICE DATA MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 3 B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case , ATC 5.6 pF Chip Capacitor, B Case, ATC 0.8 - 8.0 Variable Capacitors, Gigatrim 8.2 pF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet 20 K pF Chip Capacitor, B Case, ATC 16 pF Chip Capacitors, B Case, ATC 0.6 - 4.5 Variable Capacitor, Gigatrim 7.15 nH Inductor, Coilcraft 17.5 nH Inductor, Coilcraft N-Type Panel Mount, Stripline, M/A-Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219 x 0.080 Microstrip 0.150 x 0.080 Microstrip 0.851 x 0.080 Microstrip 0.125 x 0.220 Microstrip 0.123 x 0.220 Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076 x 0.220 Microstrip 0.261 x 0.220 Microstrip 0.220 x 0.630 x 0.200 Taper 0.240 x 0.630 Microstrip 0.060 x 0.630 Microstrip 0.067 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.630 x 0.220 x 0.200 Taper 0.200 x 0.220 Microstrip 0.055 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.226 x 0.220 Microstrip 0.868 x 0.080 Microstrip 0.129 x 0.080 Microstrip 0.223 x 0.080 Microstrip Arlon GX-0300-55-22, 30 mils = 2.55 Figure 1. 865-895 MHz Broadband Test Circuit Schematic MRF9085 Figure 2. 865-895 MHz Broadband Test Circuit Component Layout MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 4 MOTOROLA RF DEVICE DATA ./ ./ #0$0 &0%1( h 2 13 !" 2 %$( * 2 4& 567# 8,- 67 '.93:6; ' )# $*$+ %,-( < < < ' #0$& '0%13( h #0& $$+0%=( TYPICAL CHARACTERISTICS < < ./ #0$0 &0%1( h 2 13 * 2 4& ) 2 < ,) 2 < ,- !"# $ %&'( $ "? 17 2 13 * 2 4& ) 2 ,':6;@7 67 h !"# $ %&'( & < Figure 6. Power Gain, Efficiency versus Output Power MOTOROLA RF DEVICE DATA !"# $ %&'( $ ./ h ./#0$0 &0%1( ./#0$0 &0%1( "? 17 Figure 5. Intermodulation Distortion Products versus Output Power h#0&0$$+0%=( ./ 1 17 Figure 4. Power Gain, Efficiency, IMD versus Output Power 2 13 * 2 4& ) 2 < ,) 2 < ,- 2 13 * 2 4& ) 2 ,- 8, < , !"# $ %&'( & < h#0&0$$+0%=(0>0&0%1( ./ #0$&0'0%13( h #0&0$$+0%=( #0$&0'0%13( Figure 3. Class AB Broadband Circuit Performance Figure 7. Power Gain, Efficiency, ACPR versus Output Power MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5 @91 ) 2 ,) 2 ,- 2 /!37 ) 2 ,- ) 2 ,- 2 # * 2 4&# !" 2 $ f MHz Zload Zsource 865 1.35 - j1.92 1.26 - j0.15 880 1.33 - j1.66 1.26 - j0.10 895 1.28 - j1.30 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload "7A = Test circuit impedance as measured from drain to ground. @91 59/ 3?/76 B9/71 6 "917))/ B7"5776 ;9:6# !".!" .57# 19:6 7)):3:763C 961 :6"741!@9":6 1:/"":6< !".!" 9"3?:6; 7"58 7D:37 617 7/" 6.!" 9"3?:6; 7"58 Z source Z load Figure 8. Series Equivalent Input and Output Impedance MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G Q BBB 2X 1 & $'A < $' & $& $ &' + < < < $'A ,< < $$$ < $' , ' $&'$ < %<( &&+ &E& $ +< 3 B K 2 (FLANGE) D BBB & M R (INSULATOR) BBB N & 333 & S (LID) 333 & 999 & (LID) (INSULATOR) H C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX < < < < < < < < < < < < < 0' < < < < < < < < < < < < < < <0$ < 0$ < 0$ MILLIMETERS MIN MAX < < < < < < < < < < < < <0' < < < < < < < < < < < < < < < 0$ <0$ < 0$ '+$ A < & < &$ < '$ (FLANGE) CASE 465-06 ISSUE F NI-780 MRF9085 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B $'A < $' & $& $ &' + < < < $'A ,< < $$$ < $' , ' $&'$ < %<( &&+ &E& $ +< (FLANGE) D BBB & N (LID) 333 M R & 333 & S (INSULATOR) BBB & 999 & (LID) (INSULATOR) H C 3 F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465A-06 ISSUE F NI-780S MRF9085SR3, MRF9085LSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < < < <0$ < 0$ < 0$ MILLIMETERS MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < < < < 0$ <0$ < 0$ '+$ A < & < &$ < '$ MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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