VUO 52 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 2100 2200 VRRM/DRM V 800 1200 1400 1600 1800 2000 2300 1/2 Type VUO 52-08NO1 VUO 52-12NO1 VUO 52-14NO1 VUO 52-16NO1 VUO 52-18NO1 VUO 52-20NO1 VUO 52-22NO1 1 5 4 2 ~ 10 8 6 6 8 10 4/5 Symbol Conditions IdAV IdAV IdAVM TC = 90C, module TA = 45C (RthKA = 0.5 K/W), module module IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 I2t IdAV = 55 A VRRM = 800-2200 V Maximum Ratings Features 54 43 55 A A A (50 Hz) (60 Hz) 350 375 A A * Package with DCB ceramic base plate * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 2200 V * Low forward voltage drop * UL registered E 72873 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 305 325 A A Applications TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 615 590 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 465 445 A2s A2s -40...+130 130 -40...+125 C C C 3000 3600 V~ V~ 2 - 2.5 18 - 22 Nm lb.in. 35 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25C TVJ = TVJM 0.3 5.0 mA mA VF IF = 55 A TVJ = 25C 1.46 V VT0 rt For power-loss calculations only 0.8 12.5 V mW RthJH per diode, per module, 1.5 0.25 K/W K/W dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 t = 1 min t=1s * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature & power cycling Characteristic Values 120 rect. 120 rect. Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20100503a 1-3 (c) IXYS All rights reserved http://store.iiic.cc/ VUO 52 Dimensions in mm (1 mm = 0.0394") Marking on Product IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20100503a 2-3 VUO 52 IF 60 300 A A IFSM 50 1000 50 Hz 0.8 x V RRM A 2s 250 2 It T VJ = 25C T VJ = 130C 40 T VJ = 45C T VJ = 45C 200 ma x. 30 150 T VJ = 130C typ. 20 100 10 50 0 0.0 0.5 1.0 0 10 -3 2.0 V 2.5 VF 1.5 T VJ = 130C Fig. 1 Forward current versus voltage drop per diode 10 -2 10 -1 s ms 1 10 t Fig. 3 I2t versus time (1-10 ms) per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 200 P tot 100 10 0 t 60 R thKA K/W W IdAVM A 0.5 1 1.5 2 3 4 6 160 120 50 40 30 80 20 40 0 10 0 10 20 30 40 50 A 0 IdAVM 25 50 75 10 0 C 12 5 150 0 0 25 50 75 10 0 12 5 C 150 TA TK Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature 1.6 Zth JK Zth JK K/W 1.2 0.8 Constants for ZthJC calculation: 0.4 0.0 10 -3 VUO 52 10 -2 10 -1 10 0 10 1 s t i 1 2 3 4 Rthi (K/W) 0.005 0.2 0.845 0.45 ti (s) 0.008 0.05 0.06 0.3 10 2 Fig. 6 Transient thermal impedance per diode IXYS reserves the right to change limits, test conditions and dimensions. 20100503a 3-3 (c) IXYS All rights reserved http://store.iiic.cc/