Semiconductor Group 1 Nov-28-1996
BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications
up to 500MHz
• SAW filter driver in TV tuners
Type Marking Ordering Code Pin Configuration Package
BF 799W LKs Q62702-F1571 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 20 V
Collector-emitter voltage
V
CES 30
Collector-base voltage
V
CBO 30
Emitter-base voltage
V
EBO 3
Collector current
I
C 35 mA
Base current
I
B 10
Total power dissipation
T
S ≤ 107 °C
P
tot 280 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... - 150
Thermal Resistance
Junction - soldering point
R
thJS ≤ 155 K/W
Semiconductor Group 2 Nov-28-1996
BF 799W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 20 - - V
Collector-base breakdown voltage
I
C = 10 µA,
I
E = 0
V
(BR)CBO 30 - -
Base-emitter breakdown voltage
I
E = 10 µA,
I
C = 0
V
(BR)EBO 3 - -
Collector-base cutoff current
V
CB = 20 V,
I
E = 0
I
CBO - - 100 nA
DC current gain
I
C = 5 mA,
V
CE = 10 V
I
C = 20 mA,
V
CE = 10 V
h
FE
40
35 100
95 250
--
Collector-emitter saturation voltage
I
C = 20 mA,
I
B = 2 mA
V
CEsat - 0.15 0.5 V
Base-emitter saturation voltage
I
C = 20 mA,
I
B = 2 mA
V
BEsat - - 0.95
Semiconductor Group 3 Nov-28-1996
BF 799W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 5 mA,
V
CE = 10 V,
f
= 100 MHz
I
C = 20 mA,
V
CE = 8 V,
f
= 100 MHz
f
T
-
- 1100
800 -
-MHz
Collector-base capacitance
V
CB = 10 V,
V
BE =
v
be = 0 ,
f
= 1 MHz
C
cb - 0.7 - pF
Collector-emitter capacitance
V
CE = 10 V,
V
BE =
v
be = 0 ,
f
= 1 MHz
C
ce - 0.28 -
Output capacitance
V
CB = 10 V,
I
E = 0 mA,
f
= 1 MHz
C
ob - 0.96 -
Noise figure
I
C = 5 mA,
V
CE = 10 V,
f
= 100 MHz
Z
S = 50 Ω
F
- 3 -
dB
Output conductance
I
C = 20 mA,
V
CE = 10 V,
f
= 35 MHz
g
22e - 60 - µS
Semiconductor Group 4 Nov-28-1996
BF 799W
Total power dissipation
P
tot =
f
(
T
A*,
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
180
200
220
240
260
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax/
P
totDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 Nov-28-1996
BF 799W
Transition frequency
f
T =
f
(
I
C)
f
= 100MHz
V
CE = Parameter
Collector-base capacitance
C
cb =
f
(
V
CB)
V
BE =
v
be = 0,
f
= 1MHz
