©
1989
DATA SHEET
PHOTOCOUPLERS
Document No. P11289EJ3V0DS00 (3rd edition)
(Previous No. LC-2120A)
Date Published February 1996 P
Printed in Japan
PS2633, PS2634, PS2633L, PS2634L
DESCRIPTION
PS2633, PS2634 and PS2633L, PS2634L are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington-connected phototransistor.
PS2633, PS2634 are in a plastic DIP (Dual In-line Package).
PS2633L, PS2634L are lead bending type (Gull-wing) for surface mount.
PS2633, PS2633L have base pin and PS2634, PS2634L have no base pin.
FEATURES
• High isolation voltage (BV: 5 kVr.m.s. MIN.)
• High collector to emitter voltage (VCEO: 300 V MIN.)
• Ultra High current transfer ratio (CTR: 1 000 % MIN.)
• High speed switching (tr, tf = 100
µ
s TYP.)
• UL recognized [File No. E72422(S)]
• Taping product name (PS2633L-E3, E4, PS2634L-E3, E4)
APPLICATIONS
• Telephone/Telegraph line receiver
• Power Supply
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER VOLTAGE
DARLINGTON TYPE 6 PIN PHOTOCOUPLER — NEPOC Series —
2
PS2633, PS2634, PS2633L, PS2634L
PACKAGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package) Lead Bending type (Gull-wing)
PS2633, PS2634 PS2633L, PS2634L
1 3
64
10.16 MAX.
2.8 MIN. 4.55 MAX.
3.8
MAX.
0.65
1.34 2.54 0.25 M
0.50 ±0.10
2.54
MAX. 0 to 15˚
7.62
6.5
1 3
64
10.16 MAX.
3.8 MAX.
2.54 0.25 M
0.9 ±0.25
2.54
MAX.
7.62
6.5
9.60 ±0.4
0.05 to 0.2
1.34 ±0.10
PIN CONNECTION (Top View)
PS2633, PS2633L PS2634, PS2634L
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
654
123
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. NC
654
123
3
PS2633, PS2634, PS2633L, PS2634L
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Diode
Reverse Voltage VR6V
Forward Current (DC) IF80 mA
Power Dissipation Derating ∆PD/˚C 1.5 mW/˚C
Power Dissipation PD150 mW
Peak Forward Current IF(Peak) 1A
(PW = 100
µ
s, Duty Cycle 1 %)
Transistor
Collector to Emitter Voltage VCEO 300 V
Emitter to Collector Voltage VECO 0.6 V
Collector Current IC150 mA
Power Dissipation Derating ∆PC/˚C 3.0 mW/˚C
Power Dissipation PC300 mW
Coupled
Isolation Voltage *1) BV 5 000 Vr.m.s.
Storage Temperature Tstg –55 to +150 ˚C
Operating Temperature Topt –55 to +100 ˚C
*1) AC voltage for 1 minute at TA = 25 ˚C, RH = 60 % between input (Pin No. 1, 2, 3, Common) and output (Pin No.
4, 5, 6 Common).
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Diode Forward Voltage VF1.15 1.4 V IF = 10 mA
Reverse Current IR5
µ
AVR = 5 V
Junction Capacitance Ct30 pF V = 0, f = 1.0 MHz
Transistor Collector to Emitter Dark ICEO 400 nA VCE = 300 V, IF = 0
Current
Coupled Current Transfer Ratio CTR 1 000 4 000 15 000 % IF = 1 mA, VCE = 2 V
Collector Saturation Voltage
VCE(sat) 1.0 V IF = 1 mA, IC = 2 mA
Isolation Resistance R1-2 1011 ΩVin-out = 1.0 kVDC
Isolation Capacitance C1-2 0.6 pF V = 0, f = 1.0 MHz
Rise Time*2) tr100
µ
s
VCC = 5 V, IC = 10 mA, RL = 100 Ω
Fall Time*2) tf100
µ
s
VCC = 5 V, IC = 10 mA, RL = 100 Ω
*2) Test Circuit for Switching Time
µ
V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
PULSE INPUT
PW = 100 s
Duty Cycle = 1/10
6
4
PS2633, PS2634, PS2633L, PS2634L
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25 50 75 100
0T
A
– Ambient Temperature – ˚C
50
100
150
200
P
D
– Diode Power Dissipation – mW
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
25 50 75 100
0T
A
– Ambient Temperature – ˚C
100
200
300
400
P
C
– Transistor Power Dissipation – mW
FORWARD CURRENT vs.
FORWARD VOLTAGE
0.01
0.1
1
10
100
I
F
– Forward Current – mA
0.8 1 1.4 1.6
V
F
– Forward Voltage – V
0.6 1.2
T
A
= 100 ˚C
75 ˚C
50 ˚C
25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
4.5 mA
160
1
5.0 mA 4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
I
F
= 0.5 mA
I
F
– Collector Current – mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
– Collector to Emitter Voltage – V
140
120
100
80
60
40
20
02345678
10
–50
µ
1
µ
100
10
1
100
n
n
n
p
–25 0 25 50 75 100
I
CEO
– Collector to Emitter Dark Current – nA
T
A
– Ambient Temperature – ˚C
V
CE
= 300 V
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.5
1
5
10
50
100
300
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
C
– Collector Current – mA
V
CE(sat)
– Collector Saturation Voltage – V
5.0 mA
2.0 mA
1.0 mA
I
F
= 0.5 mA
5
PS2633, PS2634, PS2633L, PS2634L
1.2
1.0
0.8
0.6
0.4
0.2
0–50 –25 0 25 50 75 100
Normalized to 1.0
at TA = 25 ˚C
IF = 1 mA, VCE = 2 V
TA – Ambient Temperature – ˚C
∆CTR – Normalized Output Current
NORMALIZED OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
300
100
50
10
5
1
20 50 100 500 1 k 2 k
ts
tf
td
tr
VCC = 10 V,
IC = 10 mA
Pulse Width = 5 ms
Duty Cycle = 1/2
RL – Load Resistance – Ω
t – Switching Time – s
µ
SWITCHING TIME vs.
LOAD RESISTANCE
CTR DEGRADATION
10 Time – Hr
0.4
1.0
1.2
102
0
0.6
IF = 1 mA
0.8
0.2
103104105106
∆CTR – Normalized
f – Frequency – kHz
AV – Voltage Gain – dB
0.01
–20
FREQUENCY RESPONSE
–15
–10
–5
0
0.1 1 10
–25
–30 100
100 Ω
1 kΩ
VCE = 4 V, IC = 10 mA
Vin = 0.1 Vp-p
1 kΩ
1
µ
F
Vin 47
kΩRLVout
10 Ω
5 000
4 000
3 000
2 000
1 000
0
Sample A
Sample B
VCE = 2 V
IF – Forward Current – mA
CTR – Current Transfer Ratio – %
CURRENT TRANSFER RATIO (CTR) vs.
FORWARD CURRENT
0.1 0.5 1 5 10 20
TA = 60 ˚C
TA = 25 ˚C
★ The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
6
PS2633, PS2634, PS2633L, PS2634L
SOLDERING PRECAUTION
(1) Infrared reflow soldering
• Peak reflow temperature : 235 ˚C or below (Plastic surface temperature)
• Reflow time : 30 seconds or less
(Time period during which the plastic surface temperature is 210 ˚C)
• Number of reflow processes : Three
• Flux : Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
INFRARED RAY REFLOW TEMPERATURE PROFILE
Peak Temperature 235 ˚C or Lower
TIME (s)
60 to 90 s
(PRE-HEAT)
120 to 160 ˚C
(ACTUAL HEAT)
to 10 s
235 ˚C MAX.
210 ˚C
PACKAGE’S SURFACE TEM (˚C)
to 30 s
(2) Dip soldering
• Peak temperature : 260 ˚C or lower
• Time : 10 s or less
• Flux : Rosin-base flux
7
PS2633, PS2634, PS2633L, PS2634L
APPLICATIONS OF PHOTO COUPLERS
TELEPHONE
LINE
Bell Ringing Signal
(75 V
r.m.s.
, 16 Hz)
PS2625
PS2626 etc. Line Observe V
CC
V
CC
PS2705-1
PS2505-1 etc.
CPU
Dialer
Circuit
Dial Pulse PS2633, PS2532-1, PS2732
Generator PS2634, PS2533-1, PS2733
Photo MOS
Speech Circuit
IN
OUT
PS2633, PS2634, PS2633L, PS2634L
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
