2N5462G - ON Semiconductor - Product.Network

March, 2006 − Rev. 5 1Publication Order Number:

2N5460/D

2N5460, 2N5461, 2N5462

JFET Amplifier

P−Channel − Depletion

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain − Gate Voltage VDG 40 Vdc

Reverse Gate − Source Voltage VGSR 40 Vdc

Forward Gate Current IG(f) 10 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD350

2.8 mW

mW/°C

Junction Temperature Range TJ−65 to +135 °C

Storage Channel Temperature Range Tstg −65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MARKING DIAGRAM

TO−92

CASE 29

STYLE 7

123

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

2 DRAIN

1 SOURCE

GATE

546x

AYWWG

2N546x = Device Code

x = 0, 1, or 2

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

2N5460, 2N5461, 2N5462

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(IG = 10 mAdc, VDS = 0) 2N5460, 2N5461, 2N5462 V(BR)GSS 40 − − Vdc

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0) 2N5460, 2N5461, 2N5462

(VGS = 30 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100°C) 2N5460, 2N5461, 2N5462

(VGS = 30 Vdc, VDS = 0, TA = 100°C)

IGSS −

−

5.0

1.0

nAdc

mAdc

Gate−Source Cutoff Voltage 2N5460

(VDS = 15 Vdc, ID = 1.0 mAdc) 2N5461

2N5462

VGS(off) 0.75

1.0

1.8

−

6.0

7.5

9.0

Vdc

Gate−Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc) 2N5460

(VDS = 15 Vdc, ID = 0.2 mAdc) 2N5461

(VDS = 15 Vdc, ID = 0.4 mAdc) 2N5462

VGS 0.5

0.8

1.5

−

4.0

4.5

6.0

Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current 2N5460

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461

2N5462

IDSS −1.0

−2.0

−4.0

−

−5.0

−9.0

−16

mAdc

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance 2N5460

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461

2N5462

⎪yfs⎪1000

1500

2000

−

4000

5000

6000

mmhos

Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yos⎪− − 75 mmhos

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 5.0 7.0 pF

Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.0 2.0 pF

FUNCTIONAL CHARACTERISTICS

Equivalent Short−Circuit Input Noise Voltage

(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) en− 60 115 nVńHz

ORDERING INFORMATION

Device Package Shipping†

2N5460 TO−92

1000 Units / Box

2N5460G TO−92

(Pb−Free)

2N5461 TO−92

2N5461G TO−92

(Pb−Free)

2N5461RLRA TO−92 2000 / Tape & Reel

2N5461RLRAG TO−92

(Pb−Free)

2N5462 TO−92 1000 Units / Box

2N5462G TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N5460, 2N5461, 2N5462

http://onsemi.com

Yfs FORWARD TRANSFER ADMITTANCE ( mhos)mYfs FORWARD TRANSFER ADMITTANCE ( mhos)m

DRAIN CURRENT versus GATE

SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE

versus DRAIN CURRENT

ID, DRAIN CURRENT (mA)

Yfs FORWARD TRANSFER ADMITTANCE ( mhos)m

4.0 4000

0 0.2

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 1. VGS(off) = 2.0 V

1.0

ID, DRAIN CURRENT (mA)

3.5

ID, DRAIN CURRENT (mA)

10 10000

0 1.0

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 2. VGS(off) = 4.0 V

ID, DRAIN CURRENT (mA)

16 10000

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(off) = 5.0 V

ID, DRAIN CURRENT (mA)

Figure 4. VGS(off) = 2.0 V

Figure 5. VGS(off) = 4.0 V

Figure 6. VGS(off) = 5.0 V

3.0

2.5

2.0

1.5

1.0

0.5

00.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VDS = 15 V

200

300

500

700

1000

2000

3000

0.2 0.3 0.5 0.7 2.0 3.0 4.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

00.5 1.5 2.0 2.5 3.0 3.5 4.0 500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0

8.0

6.0

4.0

2.0

01.0 2.0 3.0 8.04.0 5.0 6.0 7.0 500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

TA = −55°C

25°C

125°C

VDS = 15 V

f = 1.0 kHz

VDS = 15 V

TA = −55°C

25°C

125°C

VDS = 15 V

TA = −55°C

25°C

125°C

VDS = 15 V

f = 1.0 kHz

VDS = 15 V

f = 1.0 kHz

2N5460, 2N5461, 2N5462

http://onsemi.com

1000

0.1 0.2

ID, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

10 0.5 1.0 2.0 5.0 10

ross, OUTPUT RESISTANCE (k ohms)

C, CAPACITANCE (pF)

VDS, DRAIN−SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance versus

Drain−Source Voltage

NF, NOISE FIGURE (dB)

RS, SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus

Source Resistance

Figure 10. Equivalent Low Frequency Circuit

100

200

300

500

700

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10 20 30 40

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

1.0 10 100 1000 10,000

NOTE:

1. Graphical data is presented for dc conditions. Tabular

data i s given for pulsed conditions (Pulse Width = 630 ms,

Duty Cycle = 10%).

*Cosp is Coss in parallel with Series Combination of Ciss and Crss.

Crss

Ciss ross Coss | yfs | vi

COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz

yis = jW Ciss

yos = jW Cosp * + 1/ross

yfs = yfs |

yrs = −jW Crss

VDS = 15 V

f = 1.0 kHz

IDSS = 3.0 mA

6.0 mA

10 mA

f = 1.0 MHz

VGS = 0

Ciss

Coss

Crss

VDS = 15 V

VGS = 0

f = 100 Hz

2N5460, 2N5461, 2N5462

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 7:

PIN 1. SOURCE

2. DRAIN

3. GATE

TO−92

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

2N5460/D

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