1SS196
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
Ultra High Speed Switching Application
Small package : SC-59
Low forward voltage : VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capa citance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25°
°°
°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 2 A
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55∼125 °C
Electrical Characteristics (Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― IF = 1mA ― 0.60 ―
VF (2) ― I
F = 10mA ― 0.72 ―
Forward voltage
VF (3) ― I
F = 100mA ― 0.90 1.20
V
IR (1) ― V
R = 30V ― ― 0.1
Reverse current
IR (2) ― V
R = 80V ― ― 0.5
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 0.9 3.0 pF
Reverse recovery time trr ― I
F = 10mA (Fig.1) ― 1.6 4.0 ns
Marking
JEDEC TO-236MOD
EIAJ SC-59
TOSHIBA 1-3G1B
Weight: 0.012g
Unit: mm
1SS196
2001-06-07
2
Fig.1 Reverse recovery time (trr) test circuit
1SS196
2001-06-07
3
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A
RESTRICTIONS ON PRODUCT USE
