AP02N60I - Advanced Power Electronics Corp. USA

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test BVDSS 600V

▼ Fast Switching RDS(ON) 8Ω

▼ Simple Drive Requirement ID2A

Description

Absolute Maximum Ratings

Symbol Units

VDS Drain-Source Voltage V

VGS Gate-Source Voltage V

ID@TC=25℃Continuous Drain Current, VGS @ 10V A

ID@TC=100℃Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current1A

PD@TC=25℃Total Power Dissipation W

W/℃

EAS Single Pulse Avalanche Energy2mJ

IAR Avalanche Current A

EAR Repetitive Avalanche Energy mJ

TSTG ℃

TJOperating Junction Temperature Range ℃

Thermal Data

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 5.7 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data & specifications subject to change without notice 1

200806054

RoHS-compliant Product

Storage Temperature Range -55 to 150

3.6

Linear Derating Factor 0.176

1.26

Parameter Rating

600

AP02N60I

-55 to 150

Parameter

± 30

GDSTO-220CFM(I)

The TO-220CFM package is widely preferred for all commercial-

industrial applications. The device is suited for switch mode power

supplies ,AC-DC converters and high current high speed switching

circuits.

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V

ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S

IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA

Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS=--

QgTotal Gate Charge3ID=2A - 14 - nC

Qgs Gate-Source Charge VDS=480V - 2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC

td(on) Turn-on Delay Time3VDS=300V - 9.5 - ns

trRise Time ID=2A - 12 - ns

td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns

tfFall Time RD=150Ω-9-

Ciss Input Capacitance VGS=0V - 155 - pF

Coss Output Capacitance VDS=25V - 27 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 2 A

ISM Pulsed Source Current ( Body Diode )1- - 3.6 A

VSD Forward On Voltage3Tj=25℃, IS=2A, VGS=0V - - 1.5 V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.

3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP02N60I

± 30V ±100

AP02N60I

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature

0.8

0.9

1.1

1.2

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normal ized BV DSS (V)

0.4

0.8

1.2

1.6

2.4

2.8

-50 0 50 100 150

Tj , Junction Temperature ( oC )

Normal ized RDS(ON)

VGS=10V

D=1A

0.5

1.5

0 5 10 15 20

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TC=25oC 10V

5.5V

6.0V

5.0V

VGS=4.5V

0.2

0.4

0.6

0.8

0 5 10 15 20

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TC=150 oC 10V

5.5V

6.0V

5.0V

VGS=4.5V

AP02N60I

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

Fig 7. Maximum Safe Operating Area

Fig 8. Effective Transient Thermal Impedance

0 50 100 150

Tc , Case Temperature ( o

C )

PD (W)

0.4

0.8

1.2

1.6

2.4

25 50 75 100 125 150

Tc , Case Temperature ( o

C )

ID , Drain Curre nt (A)

0.01

0.1

1 10 100 1000 10000

VDS (V)

ID (A)

TC=25oC

Single Pulse

100us

1ms

10ms

100ms

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Pulse Width (s)

Normalized Thermal Response (Rthjc)

PDM

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty Factor = 0.5

Single Pulse

AP02N60I

Fig 9. Gate Charge Characteristics

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

Fig 10. Typical Capacitance Characteristics

-50 0 50 100 150

Tj , Junction Temperature ( o C )

VGS(th) (V)

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VSD (V)

IS (A)

Tj = 150 oCT

j = 25 oC

0 2 4 6 8 10 12 14 16 18 20

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

ID=2A VDS =320V

VDS =400V

VDS =480V

120

160

200

1 5 9 1317212529

VDS (V)

C (pF)

=1.0MHz

Ciss

Coss

Crss

AP02N60I

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

td(on) trtd(off) tf

VDS

VGS

10%

90%

10V

QGS QGD

Charge

0.5x RATED VDS

TO THE

OSCILLOSCOPE

+10 V

VDS

VGS

0.8 x RATED VDS

TO THE

OSCILLOSCOPE

VDS

VGS

1~ 3 m

Package Outline : TO-220CFM

Millimeters

MIN NOM MAX

A4.30 4.70 4.90

A1 2.30 2.65 3.00

b0.50 0.70 0.90

b1 0.95 1.20 1.50

c0.45 0.65 0.80

c2 2.30 2.60 2.90

E9.70 10.00 10.40

L12.50 13.00 13.50

L3 2.91 3.41 3.91

L4 14.70 15.40 16.10

φ---- 3.20 ----

e---- 2.54 ----

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220CFM

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

20N60I

Part Numbe

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Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

YWWSSS

Package Code

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