Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
1
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage tvj = -40°C ... tvj max VRRM 3500, 4000
4500 V
Stoßspitzensperrspannung
non-repetetive peak reverse voltage tvj = +25°C ... tvj max VRSM 3600, 4100
4600 V
Durchlaßstrom-Grenzeffektivwert
RMS forward current IFRMSM 2700 A
Dauergrenzstrom
mean forward current tC = 85°C, f = 50Hz
tC = 70°C, f = 50Hz IFAVM 1460
1720 A
A
Stoßstrom-Grenzwert
surge forward current tvj = tvj max, tp = 10ms IFSM 32 kA
Grenzlastintegral
I2t-value tvj = tvj max, tp = 10ms I2t5,12-106A2s
Period. Abklingsteilheit des Durchlaßstroms beim Ausschalten
repetitive decay rate of on-state current at turn-of iFM = 3000A, vR = 0,67 VRRM
CS = 3µF, RS = 4Ω
DS = D291S45T
(-diF/dt)com 500 A/µs
Charakteristische Werte / Characteristic values
Gleichsperrspannung
continuous direct reverse voltage failure rate λ < 100
estimate value VR(D) typ. 2000 V
Durchlaßspannung
forward voltage tvj = tvj max, iF = 2500A vFmax 2,5 V
Schleusenspannung
threshold voltage tvj = tvj max V(TO) 1,43 V
Ersatzwiderstand
forward slope resistance tvj = tvj max rT0,38 mΩ
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage tvj = tvj max, diF/dt = 500A/µs VFRM typ. 45 V
Sperrstrom
reverse current tvj = tvj max, vR = VRRM iR200 mA
Rückstromspitze
peak reverse recovery current tvj = tvj max
iFM = 1000A, -diF/dt = 250A/µs
vR = 1000V, CS = 3,3µF, RS = 5Ω
IRM max 840 A
Sperrverzögerungsladung
recovered charge tvj = tvj max
iFM = 1000A, -diF/dt = 250A/µs
vR = 1000V, CS = 3,3µF, RS = 5Ω
Qrmax 2800 µAs
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
2
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case Kühlfläche / cooling surface
beidseitig / two-sided, DC
Anode / anode, DC
Kathode /cathode, DC
RthJC max
max
max
0,0125
0,0228
0,0277
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single sided
RthCK max
max 0,003
0,006 °C/W
°C/W
Höchstzulässige Sperrschichttemperatur
max. junction temperature tvj max 140 °C
Betriebstemperatur
operating temperature tc op -40...+140 °C
Lagertemperatur
storage temperature tstg -40...+150 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix Seite 3
Anpreßkraft
clampig force F27...45 kN
Gewicht
weight Gtyp 850 g
Kriechstrecke
creepage distance 30 mm
Luftstrecke
air distance 20 mm
Feuchteklasse
humidity classification DIN 40040 C
Schwingfestigkeit
vibration resistance f = 50Hz 50 m/s2
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehörigen technischen Erläuterungen.
This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
3
Outline Drawing
26+-0.5
∅
100
max
∅
62,8
C
A
2 center holes
∅ 3.5 ×1.8
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
4
On-State Characteristics ( v F )
Upper limit of scatter range
t vj = 140 ° C
typ. max.
0
500
1000
1500
2000
2500
3000
3500
0,00 0,50 1,00 1,50 2,00 2,50 3,00
VF / [V]
IF / [ A ]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
5
Transient thermal Impedance for constant-current
Double side
cooled Anode side
cooled Cathode side
cooled
r [K/W] [s] r [K/W] [s] r [K/W] [s]
10,0038 20,0141 9,2 0,019 7,9
20,004 0,202 0,004 0,202 0,004 0,202
30,0029 0,103 0,0029 0,103 0,0029 0,13
40,0012 0,0115 0,0012 0,0115 0,0012 0,0115
50,0006 0,00245 0,0006 0,00245 0,0006 0,00245
Σ0,0125 -0,0228 -0,0277 -
Double side
Anode side
Cathode side
0
0,005
0,01
0,015
0,02
0,025
0,03
0,035
0,04
0,045
0,05
0,001 0,01 0,1 110 100
t / [sec.]
Z (th) JC / [K/W]
(
)
ZRe
thJC thn t
n
nn
=⋅−−
=
∑1
1
/
max τ
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
6
Surge Current Characteristics I FSM = f ( tp )
I²t value i2 dt = f ( tp )
Sine half-wave, t vj =140 ° C , v R = 0
1,E+03
1,E+04
1,E+05
0,1 110 100
Time / [ms]
_____ IFSM / [A]
1,E+05
1,E+06
1,E+07
i²dt / [A²s]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
7
Reverse Recovery Current IRM = f ( - di/dt )
Upper limit of scatter range
Conditions : tvj = 140 ° C Parameter: IFM
Cs = 3 µF, Ds = D291S45T
VR >= 1000 V
100A
300A
500A
1000A
3000A
0
200
400
600
800
1000
1200
1400
0100 200 300 400 500 600
di/dt / [A/µs]
IRM / [A]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
8
Reverse Recovery Charge Qrr = f ( - di/dt )
Upper limit of scatter range
Conditions: tvj = 140 ° C Parameter: IFM
Cs = 3 µF, Ds = D291S45T
VR >= 1000 V
100A
300A
500A
1000A
3000A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0100 200 300 400 500 600
di/dt / [A/µs]
QRR / [µAs]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
9
Reverse Recovery Energy Eoff = f ( - di/dt )
Standard value for diodes with VT(T0) = 1,43 V, rT = 0,38 mΩ
Conditions: tvj = 140 ° C Parameter: IFM
Cs = 3 µF, Ds = D291S45T VR = 2000 V - - - -
VR = 3000 V ____
100A
300A
500A
1000A
3000A
0
0,5
1
1,5
2
2,5
3
0100 200 300 400 500 600
di/dt / [A/µs]
WOFF / [WS]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
10
Reverse Recovery Energy Eoff = f ( - di/dt )
Standard value for diodes with VT(T0) = 1,12 V, rT = 0,39 mΩ
Conditions: tvj = 140 ° C Parameter: IFM
Cs = 3 µF, Ds = D291S45T VR = 2000 V - - - -
VR = 3000 V ____
100A
300A
500A
1000A
3000A
0
0,5
1
1,5
2
2,5
3
0100 200 300 400 500 600
di/dt / [A/µs]
WOFF / [Ws]
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode D 1461 S 35 ... 45 T
SZ-M / 16 June 1997, Beuermann Seite/page
S
11
Typical Peak Forward Recovery Voltage VFRM = f (diF/dt)
linear di/dt
Parameter tvj
25°C
140°C
0
10
20
30
40
50
60
0100 200 300 400 500 600 700 800
di/dt / [A/µs]
VFRM / [V]
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