Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj = -40C ... tvj max VRRM 3500, 4000 V 4500 Stospitzensperrspannung non-repetetive peak reverse voltage tvj = +25C ... tvj max VRSM 3600, 4100 V 4600 Durchlastrom-Grenzeffektivwert RMS forward current IFRMSM 2700 A 1460 A 1720 A Dauergrenzstrom mean forward current tC = 85C, f = 50Hz tC = 70C, f = 50Hz IFAVM Stostrom-Grenzwert surge forward current tvj = tvj max, tp = 10ms IFSM Grenzlastintegral 2 I t-value tvj = tvj max, tp = 10ms It Period. Abklingsteilheit des Durchlastroms beim Ausschalten repetitive decay rate of on-state current at turn-of iFM = 3000A, vR = 0,67 VRRM CS = 3F, RS = 4 (-diF/dt)com 32 kA 2 6 5,12-10 2 As 500 A/s DS = D291S45T Charakteristische Werte / Characteristic values Gleichsperrspannung continuous direct reverse voltage failure rate < 100 Durchlaspannung forward voltage VR(D) typ. tvj = tvj max, iF = 2500A vF max Schleusenspannung threshold voltage tvj = tvj max V(TO) 1,43 V Ersatzwiderstand forward slope resistance tvj = tvj max rT 0,38 m Spitzenwert der Durchlaverzogerungsspannung peak value of forward recovery voltage tvj = tvj max, diF/dt = 500A/s VFRM Sperrstrom reverse current tvj = tvj max, vR = VRRM iR Ruckstromspitze peak reverse recovery current tvj = tvj max iFM = 1000A, -diF/dt = 250A/s vR = 1000V, CS = 3,3F, RS = 5 IRM max 840 A Sperrverzogerungsladung recovered charge tvj = tvj max iFM = 1000A, -diF/dt = 250A/s vR = 1000V, CS = 3,3F, RS = 5 Qr max 2800 As SZ-M / 16 June 1997, Beuermann 2000 V estimate value 2,5 V typ. 45 V 200 mA Seite/page 1 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Kuhlflache / cooling surface beidseitig / two-sided, DC Anode / anode, DC Kathode /cathode, DC RthJC Ubergangs-Warmewiderstand thermal resistance, case to heatsink Kuhlflache / cooling surface beidseitig / two-sided einseitig / single sided RthCK max max max 0,0125 C/W 0,0228 C/W 0,0277 C/W max max 0,003 C/W 0,006 C/W Hochstzulassige Sperrschichttemperatur max. junction temperature tvj max 140 C Betriebstemperatur operating temperature tc op -40...+140 C Lagertemperatur storage temperature tstg -40...+150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Seite 3 Anprekraft clampig force F Gewicht weight G 27...45 kN typ 850 g Kriechstrecke creepage distance 30 mm Luftstrecke air distance 20 mm Feuchteklasse humidity classification DIN 40040 Schwingfestigkeit vibration resistance f = 50Hz C 2 50 m/s Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehorigen technischen Erlauterungen. This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. SZ-M / 16 June 1997, Beuermann Seite/page 2 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Outline Drawing 100 max 26+-0.5 A C 62,8 2 center holes 3.5 x1.8 SZ-M / 16 June 1997, Beuermann Seite/page 3 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S On-State Characteristics ( v F ) Upper limit of scatter range t vj = 140 C 3500 typ. max. 3000 2500 IF / [ A ] 2000 1500 1000 500 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF / [V] SZ-M / 16 June 1997, Beuermann Seite/page 4 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Transient thermal Impedance for constant-current 1 2 3 4 5 Double side cooled r [K/W] [s] 0,0038 2 0,004 0,202 0,0029 0,103 0,0012 0,0115 0,0006 0,00245 0,0125 - Anode side cooled r [K/W] [s] 0,0141 9,2 0,004 0,202 0,0029 0,103 0,0012 0,0115 0,0006 0,00245 0,0228 - Cathode side cooled r [K/W] [s] 0,019 7,9 0,004 0,202 0,0029 0,13 0,0012 0,0115 0,0006 0,00245 0,0277 - 0,05 Z thJC = n =1 Rthn (1 - e - t / n ) nmax 0,045 0,04 Cathode side 0,03 Anode side 0,025 0,02 Double side Z (th) JC / [K/W] 0,035 0,015 0,01 0,005 0,001 0,01 0,1 1 10 0 100 t / [sec.] SZ-M / 16 June 1997, Beuermann Seite/page 5 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Surge Current Characteristics I FSM = f ( tp ) It value i2 dt = f ( tp ) 1,E+07 1,E+04 1,E+06 1,E+03 1,E+05 100 _____ I FSM / [A] 1,E+05 idt / [As] Sine half-wave, t vj =140 C , v R = 0 0,1 1 10 Time / [ms] SZ-M / 16 June 1997, Beuermann Seite/page 6 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Reverse Recovery Current IRM = f ( - di/dt ) Upper limit of scatter range Conditions : tvj = 140 C Cs = 3 F, Ds = D291S45T VR >= 1000 V Parameter: IFM 1400 3000A 1000A 1200 500A 300A 800 100A IRM / [A] 1000 600 400 200 0 0 100 200 300 400 500 600 di/dt / [A/s] SZ-M / 16 June 1997, Beuermann Seite/page 7 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Reverse Recovery Charge Qrr = f ( - di/dt ) Upper limit of scatter range tvj = 140 C Cs = 3 F, Ds = D291S45T VR >= 1000 V Conditions: Parameter: IFM 4500 3000A 4000 1000A 3500 500A 3000 QRR / [As] 300A 2500 2000 1500 100A 1000 500 0 0 100 200 300 400 500 600 di/dt / [A/s] SZ-M / 16 June 1997, Beuermann Seite/page 8 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Reverse Recovery Energy Eoff = f ( - di/dt ) Standard value for diodes with VT(T0) = 1,43 V, rT = 0,38 m tvj = 140 C Cs = 3 F, Ds = D291S45T Conditions: Parameter: IFM VR = 2000 V - - - VR = 3000 V ____ 3 2,5 3000A 1000A W OFF / [WS] 2 500A 1,5 300A 1 100A 0,5 0 0 100 200 300 400 500 600 di/dt / [A/s] SZ-M / 16 June 1997, Beuermann Seite/page 9 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Reverse Recovery Energy Eoff = f ( - di/dt ) Standard value for diodes with VT(T0) = 1,12 V, rT = 0,39 m tvj = 140 C Cs = 3 F, Ds = D291S45T Conditions: Parameter: IFM VR = 2000 V - - - VR = 3000 V ____ 3 3000A 1000A 2,5 500A W OFF / [Ws] 2 300A 1,5 1 100A 0,5 0 0 100 200 300 400 500 600 di/dt / [A/s] SZ-M / 16 June 1997, Beuermann Seite/page 10 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 ... 45 T S Typical Peak Forward Recovery Voltage VFRM = f (diF/dt) linear di/dt Parameter tvj 60 140C 50 VFRM / [V] 40 30 25C 20 10 0 0 100 200 300 400 500 600 700 800 di/dt / [A/s] SZ-M / 16 June 1997, Beuermann Seite/page 11 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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