Document Number: 89273 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
ES1A thru ES1D
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 200 V
IFSM 30 A
trr 15 ns
VF0.92 V
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89273
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ES1A thru ES1D
Vishay General Semiconductor
New Product
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward
voltage
IF = 0.6 A VF (1) 0.865 V
IF = 1.0 A VF0.920
Maximum DC reverse current at rated
DC blocking voltage
TA = 25 °C IR
5.0 μA
TA = 100 °C 100
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A trr 15 ns
Maximum reverse recovery time IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 25 °C trr
25 ns
TJ = 100 °C 35
Maximum stored charge IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 25 °C Qrr
10 nC
TJ = 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz CJ10 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Typical thermal resistance
RJA (1) 85
°C/W
RJL (1) 35
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ES1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
0
1.2
80 90 100 110 120 130 140 150
0.8
1.0
0.2
0.4
0.6
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
110 100
5
10
15
20
25
30
0
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Document Number: 89273 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ES1A thru ES1D
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080100
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
T
J
= 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
14
12
10
8
6
4
2
0
0.1 1 10 100
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
100
10
1
0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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