FODM8801AR2V - ON SEMICONDUCTOR

June, 2020 − Rev. 4

1Publication Order Number:

FODM8801A/D

OptoHiTE Series,

High-Temperature

Phototransistor

Optocoupler in Half-Pitch

Mini-Flat 4-Pin Package

FODM8801A, FODM8801B,

FODM8801C

Description

In the OptoHiT series, the FODM8801 is a first−of−kind

phototransistor, utilizing ON Semiconductor’s leading−edge

proprietary process technology to achieve high operating temperature

characteristics, up to 125°C. The opto−coupler consists of an

aluminum gallium arsenide (AlGaAs) infrared light−emitting diode

(LED) optically coupled to a phototransistor, available in a compact

half−pitch, mini− flat, 4−pin package. It delivers high current transfer

ratio at very low input current. The input−output isolation voltage,

VISO, is rated at 3750 VACRMS.

Features

•Utilizing Proprietary Process Technology to Achieve High Operating

Temperature: Up to 125°C

•Guaranteed Current Transfer Ratio (CTR)

Specifications Across Full Temperature Range

♦Excellent CTR Linearity at High−Temperature

♦CTR at Very Low Input Current, IF

•High Isolation Voltage Regulated by Safety Agency:

C−UL / UL1577, 3750 VACRMS for 1 Minute and

DIN EN/IEC60747−5−5

•Compact Half−Pitch, Mini−Flat, 4−Pin Package

(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height)

•>5 mm Creepage and Clearance Distance

•Applicable to Infrared Ray Reflow, 245°C

•These are Pb−Free Devices

Applications

•Primarily Suited for DC−DC Converters

•Ground−Loop Isolation, Signal−Noise Isolation

•Communications – Adapters, Chargers

•Consumer – Appliances, Set−Top Boxes

•Industrial – Power Supplies, Motor Control, Programmable Logic

Control

www.onsemi.com

See detailed ordering and shipping information on page 9 of

this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

MFP4 2.5 x 4.4, 1.27P

CASE 100AL

8801x = Specific Device Code (x = A, B, C)

V = DIN EN/IEC60747−5−5 Option (only

appears on component ordered with

this option)

X = One−Digit Year Code

YY = Digit Work Week

M = Assembly Package Code

HALF−PITCH MINI−FLAT

PIN CONNECTIONS

8801x

VXYYM

3 EMITTER

COLLECTORANODE

CATHODE

FODM8801A, FODM8801B, FODM8801C

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SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”

only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)

Parameter Characteristics

Installation Classifications per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

<150 VRMS I–IV

<300 VRMS I–III

Climatic Classification 40/125/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,

Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC

848 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,

100% Production Test with tm = 1 s, Partial Discharge <5 pC

1060 Vpeak

VIORM Maximum Working Insulation Voltage 565 Vpeak

VIOTM Highest Allowable Over−Voltage 6000 Vpeak

External Creepage ≥5 mm

External Clearance ≥5 mm

DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm

TSCase Temperature (Note 1) 150 °C

IS,INPUT Input Current (Note 1) 200 mA

PS,OUTPUT Output Power (Note 1) 300 mW

RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >10

1. Safety limit values – maximum values allowed in the event of a failure.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)

Symbol Parameter Value Unit

TOTAL PACKAGE

TSTG Storage Temperature −40 to +150 °C

TOPR Operating Temperature −40 to +125 °C

TJJunction Temperature −40 to +140 °C

TSOL Lead Solder Temperature 245 for 10 s °C

EMITTER

IF(average) Continuous Forward Current 20 mA

VRReverse Input Voltage 6 V

PDLED Power Dissipation (Note 2, 4) 40 mW

DETECTOR

IC(average) Continuous Collector Current 30 mA

VCEO Collector−Emitter Voltage 75 V

VECO Emitter−Collector Voltage 7 V

PDCCollector Power Dissipation (Note 3, 4) 150 mW

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. Derate linearly from 73°C at a rate of 0.24 mW/°C.

3. Derate linearly from 73°C at a rate of 2.23 mW/°C.

4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside

these ratings.

FODM8801A, FODM8801B, FODM8801C

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RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

TAOperating Temperature −40 to +125 °C

VFL(OFF) Input Low Voltage −5.0 to +0.8 V

IFH Input High Forward Current 1 to 10 mA

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

ISOLATION CHARACTERISTICS

Symbol Parameter Conditions Min Typ Max Unit

VISO Input−Output Isolation Voltage f = 60 Hz, t = 1 min., II−O ≤ 10 mA

(Note 5, 6)

3.750 − − VACRMS

RISO Isolation Resistance VI−O = 500 V (Note 5) 10

− − W

CISO Isolation Capacitance f = 1 MHz −0.3 0.5 pF

5. Device is considered a two−terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.

6. 3,750 VACRMS for 1 minute is equivalent to 4,500 VACRMS for 1 second.

ELECTRICAL CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified.)

All typical values are measured at TA = 25°C

Symbol Parameter Conditions Min Typ Max Unit

EMMITER

VF Forward Voltage IF = 1 mA 1.00 1.35 1.80 V

DVF / DTA Forward−Voltage Coefficient IF = 1 mA − −1.6 −mV/°C

IR Reverse Current VR = 6 V − − 10 mA

CT Terminal Capacitance V = 0 V, f = 1 MHz −30 −pF

DETECTOR

BVCEO Collector−Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA 75 130 −V

BVECO Emitter−Collector Breakdown Voltage IE = 100 mA, IF = 0 mA 7 12 −V

ICEO Collector Dark Current VCE = 75 V, IF = 0 mA, TA = 25°C− − 100 nA

VCE = 50 V, IF = 0 mA − − 50 mA

VCE = 5 V, IF = 0 mA − − 30 mA

CCE Capacitance VCE = 0 V, f = 1 MHz −8−pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FODM8801A, FODM8801B, FODM8801C

www.onsemi.com

TRANSFER CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified.)

All typical values are measured at TA = 25°C

Symbol Parameter Device Conditions Min Typ Max Unit

CTRCE Current Transfer

Ratio

(Collector−Emitter)

FODM8801A IF = 1.0 mA, VCE = 5 V @ TA = 25°C 80 120 160 %

IF = 1.0 mA, VCE = 5 V 35 120 230

IF = 1.6 mA, VCE = 5 V 40 125 −

IF = 3.0 mA, VCE = 5 V 45 138 −

FODM8801B IF = 1.0 mA, VCE = 5 V @ TA = 25°C 130 195 260

IF = 1.0 mA, VCE = 5 V 65 195 360

IF = 1.6 mA, VCE = 5 V 70 202 −

IF = 3.0 mA, VCE = 5 V 75 215 −

FODM8801C IF = 1.0 mA, VCE = 5 V @ TA = 25°C 200 300 400

IF = 1.0 mA, VCE = 5 V 100 300 560

IF = 1.6 mA, VCE = 5 V 110 312 −

IF = 3.0 mA, VCE = 5 V 115 330 −

CTRCE(SAT) Saturated Current

Transfer Ratio

(Collector−Emitter)

FODM8801A IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 65 108 150 %

IF = 1.0 mA, VCE = 0.4 V 30 108 −

IF = 1.6 mA, VCE = 0.4 V 25 104 −

IF = 3.0 mA, VCE = 0.4 V 20 92 −

FODM8801B IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 90 168 245

IF = 1.0 mA, VCE = 0.4 V 45 168 −

IF = 1.6 mA, VCE = 0.4 V 40 155 −

IF = 3.0 mA, VCE = 0.4 V 35 132 −

FODM8801C IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 140 238 380

IF = 1.0 mA, VCE = 0.4 V 75 238 −

IF = 1.6 mA, VCE = 0.4 V 65 215 −

IF = 3.0 mA, VCE = 0.4 V 55 177 −

VCE(SAT) Saturation Voltage FODM8801A IF = 1.0 mA, IC = 0.3 mA −0.17 0.40 V

IF = 1.6 mA, IC = 0.4 mA −0.16 0.40

IF = 3.0 mA, IC = 0.6 mA −0.15 0.40

FODM8801B IF = 1.0 mA, IC = 0.45 mA −0.17 0.40

IF = 1.6 mA, IC = 0.6 mA −0.16 0.40

IF = 3.0 mA, IC = 1.0 mA −0.16 0.40

FODM8801C IF = 1.0 mA, IC = 0.75 mA −0.18 0.40

IF = 1.6 mA, IC = 1.0 mA −0.17 0.40

IF = 3.0 mA, IC = 1.6 mA −0.17 0.40

FODM8801A, FODM8801B, FODM8801C

www.onsemi.com

SWITCHING CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified).

All typical values are measured at TA = 25°C

Symbol Parameter Device Conditions Min Typ Max Unit

tON Turn−On Time All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW1 6 20 ms

IF = 1.6 mA, VCC = 5 V, RL = 4.7 kW−6−

tOFF Turn−Off Time All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW1 6 20 ms

IF = 1.6 mA, VCC = 5 V, RL = 4.7 kW−40 −

tR Output Rise Time

(10% to 90%)

All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW−5−ms

tF Output Fall Time

(90% to 10%)

All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kW−5.5 −ms

CMH Common−Mode Rejection

Voltage (Transient Immunity) –

Output High

All Devices TA = 25°C, IF = 0 mA, VO > 2.0 V,

RL = 4.7 kW, VCM = 1000 V (Note 7),

Figure 14

−20 −kV/ms

CML Common−Mode Rejection

Voltage (Transient Immunity) –

Output Low

All Devices TA = 25°C, IF = 1.6 mA, VO < 0.8 V,

RL = 4.7 kW, VCM = 1000 V (Note 7),

Figure 14

−20 −kV/ms

7. Common−mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common−mode

impulse signal, VCM, to assure that the output remains high.

FODM8801A, FODM8801B, FODM8801C

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TYPICAL PERFORMANCE CURVES

Figure 1. Forward Current vs. Forward Voltage Figure 2. Collector Current vs. Forward Current

Figure 3. Current Transfer Ratio vs. Forward Current Figure 4. Normalized CTR vs. Forward Current

Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. Normalized CTR vs. Ambient Temperature

100

1.0

0.1

1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8

100

0.1

0.1 1 10 100

1000

100

0.1 1 10 100

1.0

0.1

0.1 1 10 100

1.2

1.0

0.8

0.6

0.4

0.2

0140

1.2

1.0

0.8

0.6

0.4

0.2

IF – FORWARD CURRENT (mA)

VF – FORWARD VOLTAGE (V)

IC – COLLECTOR CURRENT (mA)

IF – FORWARD CURRENT (mA)

CTR – CURRENT TRANSFER RATIO (%)

CTR (NORMALIZED) = CTR(IF) / CTR (IF = 1 mA)

NORMALIZED CTR @ 25°C

IF – FORWARD CURRENT (mA) IF – FORWARD CURRENT (mA)

TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)

120100806040200−20−40 140120100806040200−20−40

TA = 125°C

TA = −40°C

= 125°C

1.0

TA = 125°C

VCE = 5.0 V

VCE = 0.4 V

VCE = 5 V

TA = 125°C

VCE = 5 V

TA = 25°C

NORMALIZED TO IF = 1 mA

VCE = 2 V

IF = 0.5 mA

IF = 1 mA

IF = 2 mA

VCE = 5 V

IF = 0.5 mA

IF = 1 mA

IF = 2 mA

FODM8801A, FODM8801B, FODM8801C

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TYPICAL PERFORMANCE CURVES (continued)

Figure 7. Collector Current vs.

Ambient Temperature

Figure 8. Collector Current vs.

Collector−Emitter Voltage

Figure 9. Collector Dark Current vs.

Ambient Temperature

Figure 10. Switching Time vs. Load Resistance

Figure 11. Collector−Emitter Saturation Voltage

vs. Ambient Temperature

Figure 12. Current Transfer Ration vs.

Ambient Temperature

IC – COLLECTOR CURRENT (mA)

VCE – COLLECTOR−EMITTER VOLTAGE (V)

ICEO – COLLECTOR DARK CURRENT (nA)

VCE(SAT) – COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

CTR – CURRENT TRANSFER RATIO (%)

RL – LOAD RESISTANCE (kW)

TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)

−20 0 204060 80 100 120

−20 0 20 40 60 80 100 120

−40

100

1.0

0.1

−40 −20 0 20 40 60 80 100 120

−40

100000

10000

1000

100

0.1

0.01

TA = 25°C

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

1000

100

0.1

100100 10

300

250

200

150

100

VCE = 5 V

SWITCHING TIME (ms)

TA – AMBIENT TEMPERATURE (°C)

543210

120100806040200−20−40

IF = 20 mA

IF = 10 mA

IF = 5.0 mA

IF = 3.0 mA

IF = 1.6 mA

IF = 1.0 mA

IF = 0.5 mA

IF = 20 mA

IF = 15 mA

IF = 10 mA

IF = 5 mA

IF = 1 mA

VCE = 5 V

TA = 25°C

IF = 1.6 mA

tOFF

tON

VCE = 5 V

VCE = 10 V

VCE = 24 V

VCE = 48 V

VCE = 75 V

IF = 1.6 mA, IC = 1.6 mA

IF = 3.0 mA, IC = 1.8 mA

VCE = 5 V, IF = 3 mA

VCE = 5 V, IF = 1 mA

VCE = 5 V, IF = 1.6 mA

VCE = 0.4 V, IF = 1 mA

VCE = 0.4 V, IF = 1.6 mA

VCE = 0.4 V, IF = 3 mA

FODM8801A, FODM8801B, FODM8801C

www.onsemi.com

TEST CIRCUITS

Figure 13. Test Circuit for Propagation Delay, Rise Time, and Fall Time

Output Pulse

+5 V

GND

5 V

90%

10%

Input Pulse

Pulse Generator:

tr = 5 ns

ZO = 50 W

PW =50 ms

DC = 1% IF Monitor

IFRL = 4.7 kW

VO Monitoring Node

(IF = 1.6 mA)

VOL

tOFF

tON

Figure 14. Test Circuit for Instantaneous Common−Mode Rejection Voltage

Pulse Gen

+5 V

1 kV

0 V

2 V

0.8 V

90%

10%

3GND

IFRL = 4.7 kW

VO (IF = 0 mA)

VCM

VO (IF = 1.6 mA)

VOL

VOH

VCM

VO Monitoring Node

FODM8801A, FODM8801B, FODM8801C

www.onsemi.com

REFLOW PROFILE

Figure 15. Reflow Profile

Time 25°C to Peak

245

Tsmax

Tsmin

120

Max. Ramp−up Rate = 3°C/s

Max. Ramp−down Rate = 6°C/s

240 360

260

240

220

200

180

160

140

120

100

Temperature (°C)

Table 1. REFLOW PROFILE

Proﬁle Freature Pb−Free Assembly Proﬁle

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 – 120 seconds

Ramp−up Rate (tL to tP) 3°C/second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 – 150 seconds

Peak Body Package Temperature 245°C +0°C / –5°C

Time (tP) within 5°C of 245°C30 seconds

Ramp−down Rate (TP to TL) 6°C/second maximum

Time 25°C to Peak Temperature 8 minutes maximum

ORDERING INFORMATION

Part Number Package Shipping

†

FODM8801A Half Pitch Mini−Flat 4−Pin 100 Units / Tube

FODM8801AR2 Half Pitch Mini−Flat 4−Pin 2500 / Tape & Reel

FODM8801AV Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

FODM8801AR2V Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

8. The product orderable part number system listed in this table also applies to the FODM8801B, FODM8801C products.

OptoHIT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

MFP4 2.5X4.4, 1.27P

CASE 100AL

ISSUE O

DATE 31 AUG 2016

NOTES:

A) NO STANDARD APPLIES TO THIS PACKAGE

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSION

0.3−0.51

2.31−2.69

4.40 (Typ)

6.30−7.29

PIN ONE

1.95−2.11

0−0.20

1.27+/− .127 0.30−0.89 0.18−0.25

4.83

7.87

1.52

1.27

LAND PATTERN RECOMMENDATION

0.55−0.75

2.39 (Max)

1.19 (Typ)

R0.15 (Typ)

0.61

2\:

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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MFP4 2.5X4.4, 1.27P

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