NPN SILICON PLANAR TRANSISTORS 2N3053
2N3053A
TO-39
General Purpose, Medium Current Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL 2N3053 2N3053A UNITS
Collector -Emitter Voltage (1) VCEO 40 60 V
Collector -Base Voltage VCBO 60 80 V
Emitter -Base Voltage VEBO 5.0 V
Collector Current Continuous IC 700 mA
Power Dissipation@ Tc=25 degC PD 5.0 W
Derate Above 25 deg C 28.6 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
Lead Temperature 1/16", +/- 1/32" TL +235 deg C
From Case for 10 s
THERMAL RESISTANCE
Junction to Case Rth(j-c) 35 deg C/W
(1) Applicable 0 to 100mA(pulsed):
Pulse Width =300us, Duty Cycle=2%
0 to 700 mA; Pulse Width=10us, Duty Cycle=2%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N3053 2N3053A UNITS
Collector -Emitter Voltage VCEO* IC=100uA, IB=0 >40 >60 V
VCER* IC=100mA, RBE=10ohms >50 >70 V
Collector -Base Voltage VCBO IC=100uA, IE=0 >60 >80 V
Emitter -Base Voltage VEBO IE=100uA, IC=0 >5.0 >5.0 V
Collector-Cut off Current ICEX VCE=30V,VBE(off)=1.5V <250 - nA
VCE=60V,VBE(0ff)=1.5V - <250 nA
Emitter-Cut off Current IEBO VBE=4V, IC=0 <250 - nA
Base Cutt-off Current IBL VCE=60V, VBE(off)=1.5V - <250 nA
DC Current Gain hFE* IC=150mA, VCE=2.5V >25 >25
IC=150mA, VCE=10V 50 -250 50 -250
Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA <1.4 <0.3 V
Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA <1.7 0.6-1.0 V
Base Emitter on Voltage VBE(on)* IC=150mA, VCE=2.5V <1.7 <1.0 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo VCB=10V, IE=0, f=140kHz <15 <15 pF
Input Capacitance Cibo VBE=0.5V, IC=0, f=140kHz <80 <80 pF
Current Gain-Bandwidth Product ft IC=50mA,VCE=10V,f=20MHz >100 >100 MHz
*Pulse Test:- Pulse Width =300us, Duty Cycle=2%
Continental Device India Limited Data Sheet Page 1 of 2
Continental Device India Limited
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