MG200J6ES61
MITSUBISHI IGBT Module
MG200J6ES61(600V/200A 6in1)
High Power Switching Applications
Motor Control Applications
Integrates inverter power circuit in to a single package.
The electrodes are isolated from case.
Low thermal resistance
VCE (sat) =2.0 V (typ.)
Equivalent Circuit
P
CN-1:7
CN-1:8
N
C
CN-2:3
CN-1:5
CN-2:2
CN-1:3
CN-1:4
CN-2:1
CN-1:1
CN-1:2
U
V
W
CN-1:6
N-2:4
Signal Terminal
CN-1
1. E (W) 2. G (W) 3. E (V) 4. G (V)
5. E (U) 6. G (U) 7. TH1 8. TH2
CN-2
1. G (Z) 2. G (Y) 3. G (X) 4. E (L)
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MG200J6ES61
Package Dimensions:
CN-1
1. E (W) 2. G (W) 3. E (V) 4. G (V)
5. E (U) 6. G (U) 7. TH1 8. TH2
CN-2
1. G (Z) 2. G (Y) 3. G (X) 4. E (L)
1 3 5 7
2 4 6 8
4 3 2 1
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MG200J6ES61
Maximum Ratings (Ta = 25°C)
Stage Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
DC IC200
Collector current 1 ms ICP 400 A
DC IF200
Forward current 1 ms IFM 400 A
Inverter
Collector power dissipation (Tc = 25°C) PC1000 W
Junction temperature Tj150 °C
Storage temperature range Tstg 40~125 °C
Isolation voltage Visol 2500 (AC 1 min) V
Module
Screw torque 3 (M5) N·m
Electrical Characteristics (Tj = 25°C)
1. Inverter stage
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGES VGE = ±20 V, VCE = 0 ±500 nA
Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA
Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 200 mA 5.0 6.5 8.0 V
Tj = 25°C 2.0 2.4
Collector-emitter saturation voltage VCE (sat) VGE = 15 V,
IC = 200 A Tj = 125°C 2.6 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz 40000 pF
Turn-on delay time td (on) 1.00
Turn-off time toff 1.20
Switching time
Fall time tf 0.50
Reverse recovery time trr
VCC = 300 V, IC = 200 A
VGE = ±15 V, RG = 10
(Note 1)
0.30
µs
Forward voltage VFIF = 200 A 2.2 2.6 V
Note 1: Switching time test circuit & timing chart
2. Module
(Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Zero-power resistance R25 ITM = 0.2 mA 100 k
B value B25/85 Tc = 25°C/Tc = 85°C 4390 K
Inverter IGBT stage 0.125
Junction to case thermal resistance Rth (j-c) Inverter FRD stage 0.195 °C/W
Case to fin thermal resistance Rth (c-f) 0.013 °C/W
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MG200J6ES61
Switching Time Test Circuit & Timing Chart
RG
VGE
VCC
VGE
10%
t
f
10%
90%
90%
td
(
on
)
td
(
off
)
tr
r
10%
IC
Irr
RG
Recommneded conditions for application
Characteristics Symbol Min Typ. Max Unit
P-N power terminal supply voltage VCC 300 400 V
Gate voltage VGE 13.5 15 16.5 V
Switching frequency fc 20 kHz
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