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MG200J6ES61
Maximum Ratings (Ta = 25°C)
Stage Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
DC IC200
Collector current 1 ms ICP 400 A
DC IF200
Forward current 1 ms IFM 400 A
Inverter
Collector power dissipation (Tc = 25°C) PC1000 W
Junction temperature Tj150 °C
Storage temperature range Tstg −40~125 °C
Isolation voltage Visol 2500 (AC 1 min) V
Module
Screw torque ⎯ 3 (M5) N·m
Electrical Characteristics (Tj = 25°C)
1. Inverter stage
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA
Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA
Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 200 mA 5.0 6.5 8.0 V
Tj = 25°C ⎯ 2.0 2.4
Collector-emitter saturation voltage VCE (sat) VGE = 15 V,
IC = 200 A Tj = 125°C ⎯ ⎯ 2.6 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 40000 ⎯ pF
Turn-on delay time td (on) ⎯ ⎯ 1.00
Turn-off time toff ⎯ ⎯ 1.20
Switching time
Fall time tf⎯ ⎯ 0.50
Reverse recovery time trr
VCC = 300 V, IC = 200 A
VGE = ±15 V, RG = 10 Ω
(Note 1)
⎯ ⎯ 0.30
µs
Forward voltage VFIF = 200 A ⎯ 2.2 2.6 V
Note 1: Switching time test circuit & timing chart
2. Module
(Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Zero-power resistance R25 ITM = 0.2 mA ⎯ 100 ⎯ kΩ
B value B25/85 Tc = 25°C/Tc = 85°C ⎯ 4390 ⎯ K
Inverter IGBT stage ⎯ ⎯ 0.125
Junction to case thermal resistance Rth (j-c) Inverter FRD stage ⎯ ⎯ 0.195 °C/W
Case to fin thermal resistance Rth (c-f) ⎯ ⎯ 0.013 ⎯ °C/W
2005-04-01
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