AP4002I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristics Simple Drive Requirement G RoHS Compliant & Halogen-Free BVDSS 600V RDS(ON) 5 ID 2A S Description AP4002 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G DS TO-220CFM(I) TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 2 A 8 A 20 W 0.16 W/ 20 mJ 2 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 6.25 /W 65 /W 1 200909013 AP4002I-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 3 Min. Typ. Max. Units VGS=0V, ID=1mA 600 - - V VGS=10V, ID=1.0A - - 5 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.0A - 1.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +1 uA ID=2A - 12 19 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC 3 td(on) Turn-on Delay Time VDD=200V - 10 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=50,VGS=10V - 52 - ns tf Fall Time RD=200 - 19 - ns Ciss Input Capacitance VGS=0V - 375 600 pF Coss Output Capacitance VDS=10V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Min. Typ. Tj=25, IS=2A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V, - 340 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 2.2 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4002I-HF 2 2 10V 7.0V 6.0V 1.5 10V 7.0V 6.0V 5.0V o T C =150 C ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 1 5.0V 1.5 1 V G = 4.5 V 0.5 0.5 V G = 4.5 V 0 0 0 4 8 0 12 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =1A V G =10V 1 2 1 0.9 0.8 0 -50 0 50 100 -50 150 o Fig 3. Normalized BVDSS v.s. Junction 50 100 150 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 8 1.2 Normalized VGS(th) (V) 10 6 IS (A) 0 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) o T j = 25 C T j = 150 o C 4 1 0.8 0.6 2 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4002I-HF f=1.0MHz 12 1000 I D =2A V DS =480V 8 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 100 C oss 4 2 C rss 10 0 0 4 8 12 1 16 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 Operation in this area limited by RDS(ON) 100us ID (A) 1 1ms 10ms 100ms 1s DC 0.1 o T C =25 C Single Pulse 0.01 Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4