SMD Efficient Fast Reco ver y Rect ifiers
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
CEFB101-G Thru. CEFB105-G
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
DO-214AA (SMB)
QW-BE003
CEFB101-G
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.220(5.59)
0.200(5.08) 0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
0.096(2.44)
0.083(2.13)
0.185(4.70)
0.160(4.06)
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
1.0A
Reverse recovery time
O
Max. DC reverse current at TA=25 C
O
rated DC blocking voltage TA=125 C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CEFB102-G CEFB103-G CEFB104-G CEFB105-G UnitsSymbolParameter
VRRM
VDC
VRMS
IFSM
IO
VF
Trr
IR
RθJL
TJ
TSTG
50
50
35
100
100
70
0.875
25
200
200
140
30
1.0
5.0
200
13
150
-55 to +150
400
400
280
1.1
35
600
600
420
1.25
50
V
V
V
A
A
V
nS
μA
OC/W
OC
OC
QW-BE003
RATING AND CHARACTERISTIC CURVES (CEFB101-G thru CEFB105-G)
Percent of Rated Peak Reverse Voltage (%)
1501209060300
Fig.1 Reverse Characteristics
0.01
0.1
1
10
100
Rever e urr n(μ )
s C e t A
Forward Voltage (V)
0
Fig.2 Forward Characteristics
0.001
o w rd C rren (A)
F r a ut
0.01
0.1
1
10
0.8
Reverse Voltage (V)
0.01
Fig.3 Junction Capacitance
0
Jn ti n apaci ance (p )
u c o C t F
5
15
30
35
0.1 1 10 100
Number of Cycles at 60Hz
Fig.4 Non-repetitive Forward Surge Current
0
Peak Forward Surge Current A)
(
20
30
50
Reverse Voltage (V)
1
Fig.5-Typical Junction Capacitance
1.0
Capac ta c ( Fi n e p )
O
TJ=25 C
f=1MHz
10 100
10
100
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 2
REV:A
O
TJ=125 C
O
TJ=75 C
O
TJ=25 C
0.4 1.2 2.01.6
CEFB101-G~103-G
CEFB104-G
CEFB105-G
O
TJ=25 C
Pulse width 300μS
4% duty cycle
10
20
25
CEFB101-G~103-G
CEFB104-G~105-G
O
TJ=25 C
f=1MHz and applied
4VDC reverse voltage
1 10 100
10
40
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+)
25Vdc
(approx.)
(-)
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
PULSE
GENERATO R
(NOTE 2)
(+)
(-)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
trr
Set time base for
50 / 10nS / cm
1cm
-1.0A
-0.25A
0
+0.5A
Fig.6 Current Derating Curve
O
Ambient Temperature ( C)
Average Forward Current (A)
0 5025 75 100 150125 175
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Single phase
Half wave 60Hz
SMD Efficient Fast Reco ver y Rect ifiers
