COMCHIP SMD Effici en t Fast Reco ver y Rect ifier s SMD Diodes Specialist CEFB101-G Thru. CEFB105-G Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Super fast recovery time for high efficient. -Built-in strain relief. -Low forward voltage drop. 0.220(5.59) 0.200(5.08) Mechanical data -Case: JEDEC DO-214AA, molded plastic. 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) -Terminals: solderable per MIL-STD-750, method 2026. 0.050(1.27) 0.030(0.76) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 V Max. DC blocking voltage V DC 50 100 200 400 600 V Max. RMS voltage V RMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF 0.875 1.1 1.25 V Reverse recovery time T rr 25 35 50 nS Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =125 OC IR 5.0 200 RJL 13 TJ 150 O C T STG -55 to +150 O C Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature A O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0x8.0 mm 2 copper pad area. REV:A Page 1 QW-BE003 Comchip Technology CO., LTD. COMCHIP SMD Effici en t Fast Reco ver y Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CEFB101-G thru CEFB105-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 CEFB101-G~103-G O T J =125 C F o r w a rd C u rren t (A) Rever s e C urr e n t (A ) 10 T J =75 OC 1 0.1 1 CEFB104-G CEFB105-G 0.1 0.01 T J =25 OC O T J =25 C Pulse width 300S 4% duty cycle 0.01 0.001 0 30 60 90 120 0 150 0.4 0.8 1.6 1.2 2.0 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 35 50 O J u n c ti o n C apaci t ance (p F ) 30 Peak Forward Surge Current ( A) T J =25 OC f=1MHz and applied 4VDC reverse voltage 25 20 CEFB101-G~103-G 15 CEFB104-G~105-G 10 5 T J =25 C 8.3ms single half sine wave, JEDEC method 40 30 20 10 0 0 0.01 0.1 1 10 100 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 10 NONINDUCTIVE Average Forward Current (A) 50 NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1 NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 M, 22pF. 2. Rise time=10ns max., input impedance=50. -1.0A 2.4 2.0 1.6 1.2 Single phase Half wave 60Hz 0.8 0.4 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 150 175 Ambient Temperature ( OC) REV:A Page 2 QW-BE003 Comchip Technology CO., LTD.