1
Trench Gate Design
Six IGBTMOD™
200 Amperes / 250 Volts
CM200TU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Dimensions Inches Millimeters
A 4.21 107.0
B 3.54±0.01 90.0±0.25
C 4.02 102.0
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.91 23.0
G 0.47 12.0
H 0.85 21.7
J 0.91 23.0
Dimensions Inches Millimeters
K 0.15 3.75
L 0.67 17.0
M 1.91 48.5
N 0.03 0.8
P 0.32 8.1
Q 1.02 26.0
R 0.22 Dia. 5.5 Dia.
S 0.57 14.4
uw
v
T
C
Measured
Point
T
C
Measured
Point
D
C
5 - M5 NUTS
M
L
K
R 4 - Mounting
Holes
K
EE
GG
B
F
EHHS
A
GvP
EvP
GuN
EuN GvN
EvN GwN
EwN
EE E
H
J
HN
J0.110 - 0.5 Tab
P
Q
GuP
EuP GwP
EwP
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assembly
and thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-5F is a
250V (VCES), 200 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 5
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2
CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes / 250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200TU-5F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** IE200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tj < 150°C) Pc600 Watts
Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VCES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 20mA, VCE = 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts
IC = 200A, VGE = 10V, Tj = 125°C – 1.1 – Volts
Total Gate Charge QGVCC = 100V, IC = 200A, VGE = 10V – – nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – 2.0 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––66nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 3.0 nf
Re verse Transfer Capacitance Cres – – 2.3 nf
Resistive Turn-on Delay Time td(on) VCC = 100V, IC = 200A, – – 700 ns
Load Rise Time trVGE1 = VGE2 = 10V, – – 1800 ns
Switch Tur n-off Delay Time td(off) RG = 13V, Resistive – – 700 ns
Times Fall Time tfLoad Switching Operation – – 500 ns
Diode Reverse Recovery Time** trr IE = 200A, diE/dt = -400A/µs––300ns
Diode Reverse Recovery Charge** Qrr IE = 200A, diE/dt = -400A/µs– –µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/6 Module – – 0.21 °C/W
Thermal Resistance, Junction to Case Rth(j-c)R Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W
Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied – 0.09 – °C/W
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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3
CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes / 250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
GATE CHARGE, Q
G
, (mC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 0.5 1.0
15
10
5
01.5 2.0
V
CC
= 100V
V
CC
= 50V
I
C
= 200A
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -400A/µsec
T
j
= 25°C
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
0.6 0.8 1.0 1.2 1.61.4 1.8
Tj = 25°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 5 10 15
4
3
2
1
0
T
j
= 25°C
I
C
= 80A
I
C
= 400A
I
C
= 200A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
0 80 160 240 320
1.5
1.0
0.5
0400
V
GE
= 10V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0246810
300
200
100
0
400
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
012345
300
100
0
V
GE
= 15V
86
5.75
10
5.5
T
j
= 25
o
C
200
400
5.25
5
4.75
4.5
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4
CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes / 250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.21°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.47°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
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