HDJD-S722-QR999 - Avago - Product.Network

Agilent HDJD-S722-QR999

Color Sensor

Data Sheet

Features

• Convert light to R, G, B voltage

output

• Monolithic CMOS IC solution with

integrated R, G, B color filter,

photodiode array, trans-

impedance amplifier in one chip

• 3 sets of 3x3 photodiode array

design minimize the effect of

contamination and optical

aperture misalignment

• Small in size 5x 5x1 mm

• Independent gain selection options

for each R, G, B channel

Description

Agilent color sensor is a high

performance, small in size, cost

effective light to voltage

converting sensor. The sensor

combines a photodiode array

and three trans-impedance

amplifiers in a single monolithic

CMOS IC solution. With a Red

(R), Green (G) and Blue (B)

color filters coated over the

photodiode array, the sensor

converts R, G, B light to analog

voltage outputs, denoted by

VROUT, VGOUT and VBOUT,

respectively. The sensor is

packaged in a 5x5x1 (mm)

surface mount QFN-16 package.

Applications

Agilent color sensor is ideal for

open-loop color identification

and closed-loop color point

control. The sensor is designed

for low illuminance applications

including color detection,

environmental lighting,

industrial process, etc. With

R, G, B photo-sensor and

amplifier integrated in a single

5x5x1 (mm) package, Agilent

color sensor provides a high

performance, small in size and

cost effective solution to color

sensing.

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Package Dimension

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

5678

16 15 14 13

BOTTOM VIEW

(0.8)

(3.2)

5.0 ± 0.15

16L QFN 5X5

1.0 ± 0.15

NOTE: DIMENSIONS ARE IN MILLIMETERS (mm)

(0.3)

Part Numbering System

HDJD-S 7 X X-X X X X X

Gain Selection (GS) Option

999: GS 00,01 or 10

Packaging Type

R: Tape and Reel

Product Packaging

Q: QFN

Product ID

22: Component without IR Filter

Pin Out for HDJD-S722-QR999

Pin Pin Name Normal Operation

Pin 1 VBOUT Analog output voltage for BLUE

Pin 2 VGOUT Analog output voltage for GREEN

Pin 3 VROUT Analog output voltage for RED

Pin 4 VDD 5 V DC Supply

Pin 5 GND Ground

Pin 6 GSGRN1 Gain Selection Green bit 1

Pin 7 GND Ground

Pin 8 GSRED1 Gain Selection Red bit 1

Pin 9 GSRED0 Gain Selection Red bit 0

Pin 10 NC No connection

Pin 11 NC No connection

Pin 12 GSBLUE0 Gain Selection Blue bit 0

Pin 13 GSBLUE1 Gain Selection Blue bit 1

Pin 14 GND Ground

Pin 15 GSGRN0 Gain Selection Green bit 0

Pin 16 GND Ground

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Theory of Operation

The integral R, G, B color filters

on the photodiode array detect

the R, G, B components of the

light falling on the sensor. The

photodiode converts the R, G, B

light components into

photocurrents. The integrated

transimpedence amplifiers for

R, G, B components then convert

Sensor IC Block Diagram

Absolute Maximum Ratings[1,2]

Parameter Symbol Min. Max. Unit Notes

Supply Voltage VDD 4.5 5.5 V

Storage Temperature TS-40 100 °C

Operating Temperature TA-40 85 °C

Human Body Model ESD Rating ESDHBM 1kV

Notes:

1. Subjecting the part to stresses beyond those listed under this section may cause permanent damage to the device. These are stress ratings only and

do not imply that the devices will function beyond these ratings. Exposure to the extremes of these conditions for extended periods may affect

device reliability.

2. Unless otherwise specified, voltages are referenced to ground.

Recommended Operating Conditions

Parameter Symbol Min. Typ. Max. Units Notes

Operating Temperature TA02570°C

Supply Voltage VDD 4.5 5.0 5.5 V A decoupling capacitor of 100 nF

between VDD and ground is recommended.

the photocurrent to analog

voltage outputs. The voltage

output of each R, G, B channel

increases linearly with

increasing light intensity.

VDD5

TRANSIMPEDANCE AMP

RFGS (1:0)

OUT

GND

RED GAIN

SELECTION

GSGRN (1:0)

GSBLUE (1:0)

GSRED (1:0)

GREEN GAIN

SELECTION

BLUE GAIN

SELECTION

–

TRANSIMPEDANCE AMP

RFGS (1:0)

–

TRANSIMPEDANCE AMP

RFGS (1:0)

–

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Operating Conditions and Electrical Requirements

Electrical Characteristics at VDD = 5 V, TA = 25°C, RL = 68 kΩ

Parameter Symbol Remark Min. Typ. Max. Unit

Dark Voltage VDEe = 0 15 mV

Max. Output Voltage Swing VOMAX 4.8 V

Supply Current IDD Ee = 0 2.5 mA

Output Rise Time tr Min Vo = 0 V, Peak Vo = 4.3 V 5 µs

Output Fall Time tf Min Vo = 0 V, Peak Vo = 4.3 V 5 µs

GS:10, lP = 460 nm[1] 15

(Blue Channel)

Irradiance Re GS:10, lP = 542 nm[2] 19 V/(mW/cm2)

Responsivity (Green Channel)

GS:10, lP = 645 nm[3] 27

(Red Channel)

GS:01, lP = 460 nm[1] 9

(Blue Channel)

Irradiance Re GS:01, lP = 542 nm[2] 11

Responsivity (Green Channel) V/(mW/cm2)

GS:01, lP = 645 nm[3] 16

(Red Channel)

GS:00, lP = 460 nm[1] 5

(Blue Channel)

Irradiance Re GS:00, lP = 542 nm[2] 6 V/(mW/cm2)

Responsivity (Green Channel)

GS:00, lP = 645 nm[3] 9

(Red Channel)

GS:10, lP = 460 nm[1] 0.32

(Blue Channel)

Saturation GS:10, lP = 542 nm[2] 0.25 mW/cm2

Irradiance[4] (Green Channel)

GS:10, lP = 645 nm[3] 0.18

(Red Channel)

GS:01, lP = 460 nm[1] 0.53

(Blue Channel)

Saturation GS:01, lP = 542 nm[2] 0.44 mW/cm2

Irradiance[4] (Green Channel)

GS:01, lP = 645 nm[3] 0.30

(Red Channel)

GS:00, lP = 460 nm[1] 0.96

(Blue Channel)

Saturation GS:00, lP = 542 nm[2] 0.80 mW/cm2

Irradiance[4] (Green Channel)

GS:00, lP = 645 nm[3] 0.53

(Red Channel)

Notes:

1. Test condition: using blue diffuse light of peak wavelength (lP) 460 nm and spectral half width (Dl1/2) 25 nm as light source.

2. Test condition: using green diffuse light of peak wavelength (lP) 542 nm and spectral half width (Dl1/2) 35 nm as light source.

3. Test condition: using red diffuse light of peak wavelength (lP) 645 nm and spectral half width (Dl1/2) 20 nm as light source.

4. Saturation irradiance = (Max. output voltage swing)/(Irradiance responsivity).

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Typical Characteristics

Figure 1. Spectral responsivity.

Note:

Test condition is when Gain Selection Jumpers are set to

GSBLUE1=0 GSGRN1=0 GSRED1=0

GSBLUE0=1 GSGRN0=1 GSRED0=1

in which 0 = connect to Ground, 1 = no connection. Refer to Gain Selection Feedback Resistor Table.

Gain Selection Feedback Resistor Table

GS: Bit 1 Bit 0 Feedback Resistor, RF

004 MΩ

017 MΩ

1 0 12 MΩ

Notes:

1. Gains selections, GS: Bit 1 Bit 0 are applicable for each Red, Green and Blue Channel.

2. Gain selections for each channel can be selected independently of each other.

3. Feedback resistor value is proportional to responsivity. Refer to block diagram below.

4. 0 indicates that the pin is connected to ground. 1 indicates no connection.

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

TRANSIMPEDANCE AMP

RFGS (1:0)

–

0.2

0.4

350 450

NORMALIZED SENSITIVITY

BLUE

GREEN

RED

550

WAVELENGTH (nm)

650 750

0.6

0.8

1.0

1.2

Figure 2. Dark voltage vs. operating

temperature. Figure 3. Voltage output of Blue Channel vs.

irradiance (lp = 460 nm).

Figure 4. Voltage output of Green Channel vs.

irradiance (lp = 542 nm). Figure 5. Voltage output of Red Channel vs.

irradiance (lp = 645 nm).

0.005

0.01

-40 -20 0

VD – DARK VOLTAGE (V)

20 40

TA – OPERATING TEMPERATURE (°C)

60 80

0.015

0.02

0.025

0.03

0.8

1.6

0 0.2 0.4

VOLTAGE OUTPUT – V

(V)

0.6

IRRADIANCE – Ee (mW/cm

)

0.8 1.0

2.4

3.2

4.0

4.4

3.6

2.8

2.0

1.2

0.4

4.8

GS:10 GS:01 GS:00

0.8

1.6

0 0.2 0.4

VOLTAGE OUTPUT – V

(V)

0.6

IRRADIANCE – Ee (mW/cm2)

0.8 1.0

2.4

3.2

4.0

4.4

3.6

2.8

2.0

1.2

0.4

4.8

GS:10 GS:01 GS:00

0.8

1.6

0 0.2 0.4

VOLTAGE OUTPUT – VO (V)

0.6

IRRADIANCE – Ee (mW/cm2)

2.4

3.2

4.0

4.4

3.6

2.8

2.0

1.2

0.4

4.8

GS:10 GS:01 GS:00

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Recommended Reflow Profile

It is recommended that Henkel

Pb- free solder paste LF310 be used

for soldering HDJD-S722-QR999.

Below is the recommended reflow

profile.

Figure 6. Recommended reflow soldering profile.

DELTA -FLUX = 2°C/sec. max.

DELTA -COOLING = 2°C/sec. max.

T-min.

T-max.

T-reflow

T-peak

t-peakt-pre

40-60 sec. max. 20-40 sec. max.

120°C

160°C

218°C/sec.

230 ± 5°C/sec.

TIME

TEMPERATURE

DELTA -RAMP =

1°C/sec. max.

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

16 Lead QFN Recommended PCB Land Pad Design

IPC-SM-782 is used as the standard for the PCB land-pad design.

Recommended PCB finishing is OSP.

16 Lead QFN Recommended Stencil Design

A stencil thickness of 2.18 mm (6 mils) for this QFN package is

recommended.

Recommendations for Handling and

Storage of HDJD-S722-QR999

•Before opening the MBB

(Moisture Barrier Bag)

– The sensor component must

be kept sealed in a MBB

(Moisture Barrier Bag) stored

at 30°C and 70% RH or less at

all times.

•After opening the MBB

(Moisture Barrier Bag)

– The sensor component must

be kept at 30°C and 60% RH

or less.

– The sensor component should

have a MET (Manufacturing

Exposure Time) of 24 hours

starting from the time of

removal from the MBB to the

soldering oven.

– If unused sensor components

remain, it is recommended to

store them back in the MBB.

– If the indicator card has turned

from blue to pink or it has

exceeded the recommended

MET (Manufacturing

Exposure Time) of 24 hrs,

baking treatment should be

performed using the following

conditions before continuing

to IR reflow soldering.

– Baking treatment: 24 hours

at 125°C.

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

Figure 7.

Figure 8.

3.9 mm

3.19 mm

5.5 mm

0.8 mm

3.19 mm

0.4 mm

0.8 mm

2.18 mm

0.4 mm

Reel Dimensions

Package Tape and Reel Dimensions

Carrier Tape Dimensions

SECTION B-B

SECTION A-A

0.30 ± 0.05

1.75 ± .10

5.50 ± 0.05

12.00 ± 0.10

R 0.50 TYP.

∅1.55 ± 0.05

8.00 ± 0.10 ∅1.50 (MIN.)

4.00 ± 0.10

SEE NOTE #2

2.00 ± 0.05

SEE NOTE #2

Ao:

Bo:

Ko:

PITCH:

WIDTH:

5.30

2.20

8.00

12.00

NOTES:

1. Ao AND Bo MEASURED AT 0.3 mm ABOVE BASE OF POCKET.

2. 10 PITCHES CUMULATIVE TOLERANCE IS ± 0.2 mm.

3. DIMENSIONS ARE IN MILLIMETERS (mm).

18.0 MAX.*

∅178.0 ± 0.5

12.4

45°

65°

R10.65

R5.2

+1.5*

–0.0

∅55.0 ± 0.5

∅176.0

∅512

EMBOSSED RIBS

RAISED: 0.25 mm

WIDTH: 1.25 mm

BACK VIEW

NOTES:

1. *MEASURED AT HUB AREA.

2. ALL FLANGE EDGES TO BE ROUNDED.

ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(916) 788-6763

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (+65) 6756 2394

India, Australia, New Zealand: (+65) 6755 1939

Japan: (+81 3) 3335-8152(Domestic/Interna-

tional), or 0120-61-1280(Domestic Only)

Korea: (+65) 6755 1989

Singapore, Malaysia, Vietnam, Thailand,

Philippines, Indonesia: (+65) 6755 2044

Taiwan: (+65) 6755 1843

Data subject to change.

March 29, 2005

5989-1984EN