STYN212(S) thru STYN1012(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G A K A G K Dimensions TO-263(D2PAK) A G K 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC L L1 L2 L3 L4 R .380 .405 .245 .320 .100 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 0.46 0.74 .018 .029 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180 conduction angle) Tc = 105C 12 A IT(AV) Average on-state current (180 conduction angle) Tc = 105C 8 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms It Value for fusing tp = 10 ms Tj = 25C 98 A2S dI/dt Critical rate of rise of on-state current _ 100 ns IG = 2 x IGT , tr < F = 60 Hz Tj = 125C 50 A/s IGM Peak gate current tp = 20 s Tj = 125C 4 A Tj = 125C 1 W - 40 to + 150 - 40 to + 125 C 5 V IT(RMS) I t PG(AV) Tstg Tj VRGM tp = 10 ms Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) Tj = 25C 146 A 140 STYN212(S) thru STYN1012(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) STANDARD Symbol Test Conditions TYNx08(S) IGT VD = 12 V MIN. 2 MAX. 15 MAX. 1.3 V MIN. 0.2 V MAX. 30 mA MAX. 60 mA Tj = 125C MIN. 200 V/s Tj = 25C MAX. 1.6 V RL = 33 W VGT VGD VD = VDRM RL = 3.3 kW IH IT = 500 mA Gate open IL IG = 1.2 IGT Unit Tj = 125C mA dV/dt VD = 67 % VDRM VTM ITM = 24 A Vt0 Threshold voltage Tj = 125C MAX. 0.85 V Rd Dynamic resistance Tj = 125C MAX. 30 mW Tj = 25C MAX. 5 A 2 mA IDRM IRRM Gate open tp = 380 s VDRM = VRRM Tj = 125C THERMAL RESISTANCES Symbol Parameter Rth(j-c) J unction to case (DC) Rth(j-a) Junction to ambient S = 1.0 cm Value Unit 1.3 C/W TO-220AB 60 C/W TO-263 45 S= copper surface under tab PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package STYN x12S 200~~1000 15 mA TO-263 S T Y N x12 200~~1000 15 mA TO-220AB OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode STYN x12S STYN x12S 0.5 g 50 Tube S T Y N x12 S T Y N x12 2.3 g 250 B ulk Note: x = voltage