STYN212(S) thru STYN1012(S)
Discrete Thyristors(SCRs)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
G
A
K
A
K
G
ABSOLUTE RAT ING S (limi ting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 105°C12 A
IT(AV) Average on-state current (180° conduction angle) Tc = 105°C 8 A
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C A
tp = 10 ms 140
I²tI
²
t Value for fusing tp = 10 ms Tj = 25°C 98 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr < 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg
Tj Storage junction temperature range
O peratin g jun ction temp erature range - 40 to + 150
- 40 to + 125 °C
VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5V
Dimensions TO-263(D2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
KG
_
146
A
STYN212(S) thru STYN1012(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
STANDARD
THERMA L RESISTANCES
Symbol Test Conditions TYNx08(S) Unit
IGT VD = 12 V RL = 33 W MIN. 2 mA
MAX. 15
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kW Tj = 125°C MIN. 0.2 V
IH IT = 500 mA Gate open MAX. 30 mA
ILIG = 1.2 IGT MAX. 60 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 200 V/µs
VTM ITM = 24 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
RdDynamic resistance Tj = 125°C MAX. 30 mW
IDRM
IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA
Tj = 125°C 2 mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 1.3 °C/W
Rth(j-a) Junction to ambient TO-220AB 60 °C/W
S = 1.0 cm²45
S= copper surface under tab
TO-263
PRODUCT SELECTOR
Part Number Voltage (xxx) Sensitivity Package
x12 15 mA TO-220AB
200~~1000
200~~1000
STYNx12S 15 mA TO-263
OTHER INFORMATION
Note: x = volta ge
Part Number Marking Weight Base Quantity Packing mode
0.5 g 50 Tube
STYN x12 STYN x12 2.3 g 250 Bulk
STYNx12S
STYN
STYNx12S
