APTGT50A120D1 - Advanced Power Technologies

APTG

T

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D1

APTGT50A120D1 – Rev 0, January 2004

APT website – http://www.advancedpower.com

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Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C 75

I

C

Continuous Collector Current T

C

= 80°C 50

I

CM

Pulsed Collector Current T

C

= 25°C 100

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 270 W

RBSOA Reverse Bias Save Operating Area T

J

= 125°C 100A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

2

1

3

5

Q2

7

6

Q1

4

6

7

5

4

3 2 1

VCES = 1200V

IC = 50A @ Tc = 80°C

Application

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Trench + Field Stop IGBT

®

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Low stray inductance

- M5 power connectors

• High level of integration

Benefits

• Outstanding performance at high frequency

operation

• Stable temperature behavior

• Very rugged

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

Phase Leg

Trench IGBT

®

Power Module

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APTG

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5

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D1

APTGT50A120D1 – Rev 0, January 2004

APT website – http://www.advancedpower.com

2

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3

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

BV

CES

Collector - Emitter Breakdown Voltage V

GE

= 0V, I

C

= 2mA 1200 V

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 5 mA

T

j

= 25°C 1.4 1.7 2.1

V

CE(on)

Collector Emitter on Voltage V

GE

=15V

I

C

= 50A T

j

= 125°C 2.0 V

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 2mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 3600

C

rss

Reverse Transfer Capacitance V

GE

= 0V,V

CE

= 25V

f = 1MHz 160 pF

T

d(on)

Turn-on Delay Time 150

T

r

Rise Time 90

T

d(off)

Turn-off Delay Time 550

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 50A

R

G

= 18Ω 130

ns

T

d(on)

Turn-on Delay Time 180

T

r

Rise Time 100

T

d(off)

Turn-off Delay Time 650

T

f

Fall Time 180

ns

E

off

Turn off Energy

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 50A

R

G

= 18Ω 6.5 mJ

Reverse diode ratings and characteristics

T

j

= 25°C 1.6 2.2

V

F

Forward Voltage V

GE

= 0V

I

F

= 50A T

j

= 125°C 1.6 V

E

rec

Reverse Recovery Energy I

F

= 50A

V

R

= 600V

di/dt =990A/µs T

j

= 125°C 4 mJ

T

j

= 25°C 5.2

Q

rr

Reverse Recovery Charge I

F

= 50A

V

R

= 600V

di/dt=990A/µs T

j

= 125°C 9.4 µC

Thermal and package characteristics

Symbol

Characteristic Min Typ Max Unit

IGBT 0.45

R

thJC

Junction to Case Diode 0.75 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min,

I isol<1mA, 50/60Hz 2500 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

°C

For terminals M5 2 3.5

Torque Mounting torque To Heatsink M6 3 5 N.m

Wt Package Weight 180 g

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APTG

T

5

0

A

12

0

D1

APTGT50A120D1 – Rev 0, January 2004

APT website – http://www.advancedpower.com

3

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3

Package outline

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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