Data Sheet 1 of 10 Rev. 06, 2008-03-04
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA260451E
Package H-30265-2
3-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz
0
10
20
30
40
50
60
25 30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
Adj. Ch. Power Ratio (dBc)
Alt_1 2.5 MHz
Adj 2.135 MHz
Efficiency
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2.62 – 2.68 GHz
Description
The PTFA260451E is a thermally-enhanced 45-watt, internally-
matched GOLDMOS® FET intended for CDMA2000, Super3G (3GPP
TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz. Thermally-
enhanced packaging provide the coolest operation available. Full
gold metallization ensures excellent device lifetime and reliability.
Features
•Lead-free, RoHS-compliant and thermally-
enhanced packaging
•Internal matching for wideband performance
•Typical three-carrier CDMA2000 performance
- Average output power = 10 W
- Gain = 14 dB
- Efficiency = 24%
- ACPR = –52 dBc
•Typical CW performance
- Output power at P–1dB = 50 W
- Efficiency = 46%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability
•Low HCI Drift
•Capable of handling 10:1 VSWR @ 28 V, 45 W
(CW) output power
RF Performance
CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 10 W AVG, ƒ = 2680 MHz
Characteristic Symbol Min Typ Max Unit
Adjacent Channel Power Ratio ACPR —–45 —dBc
Gain Gps —14 —dB
Drain Efficiency ηD—24 —%
PTFA260451E
*See Infineon distributor for future availability.
PTFA260451E
Data Sheet 2 of 10 Rev. 06, 2008-03-04
RF Performance (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 14.0 15 —dB
Drain Efficiency ηD36 37 —%
Intermodulation Distortion IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.16 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.0 2.5 3V
Gate Leakage Current VGS = 10 V, V DS = 0 VIGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD199 W
Above 25°C derate by 1.14 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.88 °C/W
Ordering Information
Type and Version Package Outline Package Description Marking
PTFA260451E V1 H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA260451E
*See Infineon distributor for future availability.
PTFA260451E
Data Sheet 3 of 10 Rev. 06, 2008-03-04
Typical Performance (data taken in production test fixture)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz
0
8
16
24
32
40
48
56
25 30 35 40 45
Output Power (dBm), Avg.
Drain Efficiency (%)
-75
-70
-65
-60
-55
-50
-45
-40
Adj. Ch. Power Ratio (dBc)
Efficiency
Alt1
1.98 MHz
Adj 750 kHz
TCASE = 25°C
TCASE = 85°C
3-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz
0
10
20
30
40
50
60
25 30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
Adj. Ch. Power Ratio (dBc)
TCASE = 25°C
TCASE = 85°C
Alt_1
2.5 MHz
Adj 2.135 MHz
Efficiency
Gain vs. Output Power
VDD = 28 V, ƒ = 2680 MHz
13
14
15
16
17
25 30 35 40 45 50
Output Power (dBm)
Power Gain (dB)
IDQ = 500 mA
IDQ = 650 mA
IDQ = 350 mA
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz
10
11
12
13
14
15
16
17
25 30 35 40 45 50 55
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Gain
Efficiency
PTFA260451E
Data Sheet 4 of 10 Rev. 06, 2008-03-04
Broadband Performance
VDD = 28 V, IDQ = 500 mA, POUT = 4 W
12
13
14
15
16
2600 2620 2640 2660 2680 2700
Frequency (MHz)
Gain (dB), Efficiency (%)
-20
-15
-10
-5
0
Return Loss (dB)
Gain
Return Loss
Efficiency
Output Power vs. Supply Voltage
IDQ = 500 mA, ƒ = 2680 MHz
45
46
47
48
22 24 26 28 30 32 34
Supply Voltage (V)
Output Power (dBm)
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 500 mA, ƒ1 = 2679 MHz, ƒ2 = 2680 MHz
-70
-60
-50
-40
-30
-20
30 35 40 45 50
Output Power, PEP (dBm)
IMD (dBc)
3rd Order
7th
5th
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
PTFA260451E
Data Sheet 5 of 10 Rev. 06, 2008-03-04
WiMAX Performance
VDD = 28 V, IDQ = 450 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
0
5
10
15
20
25
30
35
15 20 25 30 35 40 45
Output Power (dBm)
Efficiency (%)
-50
-45
-40
-35
-30
-25
-20
-15
EVM (dBc)
Efficiency
ƒ = 2.62 GHz
ƒ = 2.68 GHz
ƒ = 2.65 GHz
WiMAX Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2650 MHz,
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
-15
15 20 25 30 35 40 45
Output Power (dBm)
EVM (dB)
t = +25 °C
t = +85 °C
t = –20 °C
WiMAX Performance
VDD = 28 V, ƒ = 2650 MHz
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
15 20 25 30 35 40 45
Output Power (dBm)
EVM (dB)
IDQ = 270 mA
IDQ = 450 mA
IDQ = 730 mA
Typical WiMAX Performance
PTFA260451E
Data Sheet 6 of 10 Rev. 06, 2008-03-04
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2600 19.5 –1.5 7.5 –0.7
2620 17.0 –2.1 7.3 –0.5
2650 18.6 0.8 7.0 –0.3
2680 19.0 –0.8 6.8 0.1
2700 18.0 –3.0 6.7 0.2
0.1
0.3
0.5
0.2
0.4
0.1
0.1
H
S
T
O
W
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
2600 MHz
2600 MHz
2700 MHz
Z Load Z Source
2700 MHz
Z0 = 50 Ω
See next page for reference circuit information
PTFA260451E
Data Sheet 7 of 10 Rev. 06, 2008-03-04
a260451ef_sch
RF_OUT
RF_IN
R3
2KVR4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R1
1.3K VR2
1.2K V
LM7805
C1
0.001µF
QQ1
Q1
R5
1.0K V
C14
C10
0.4pF
l12
1K
C8
R7
l3
1.2pF
l2l1
4.7pF
C7
C4
10 µF
35V
C5
0.1µF
10
R6
V
l6l11l10l7l5
4.7pF
C13
l9
1µF
C17
DUT
C6
4.7pF
V
V
10
R8
l4
l8
4.7pF
C9
1µF
l14l13
10µF
50V
C16
C18
1.2pF
L2
C15
.1µF
10µF
50V
C19
4.7pF
L1
C11
.1µF
C12
VDD
VDD
Reference Circuit
Reference circuit schematic for ƒ = 2680 MHz
Circuit Assembly Information
DUT PTFA260451E LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 2680 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.130 λ, 50.0 Ω7.87 x 1.47 0.310 x 0.058
l20.061 λ, 44.0 Ω3.68 x 1.83 0.145 x 0.072
l30.065 λ, 44.0 Ω3.91 x 1.83 0.154 x 0.072
l40.299 λ, 62.0 Ω18.44 x 1.02 0.726 x 0.040
l50.018 λ, 44.0 Ω1.09 x 1.83 0.043 x 0.072
l60.029 λ, 15.0 Ω1.65 x 7.62 0.065 x 0.300
l70.077 λ, 12.5 Ω4.32 x 9.45 0.170 x 0.372
l80.234 λ, 55.0 Ω14.33 x 1.27 0.564 x 0.050
l90.218 λ, 55.0 Ω13.36 x 1.27 0.526 x 0.050
l10 0.050 λ, 6.6 Ω2.74 x 19.10 0.108 x 0.752
l11 (taper) 0.080 λ, 6.6 Ω / 50.0 Ω4.90 x 19.10 / 1.32 0.193 x 0.752 / 0.052
l12 0.053 λ, 50.0 Ω3.25 x 1.32 0.128 x 0.052
l13 0.133 λ, 50.0 Ω8.13 x 1.32 0.320 x 0.052
l14 0.070 λ, 50.0 Ω4.27 x 1.32 0.168 x 0.052
1Electrical characteristics are rounded.
PTFA260451E
Data Sheet 8 of 10 Rev. 06, 2008-03-04
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C11, C15 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C7, C9, C13, C19 Ceramic capacitor, 4.7 pF ATC 100B 4R7
C8, C18 Ceramic capacitor, 1.2 pF ATC 100B 1R2
C10, C14 Capacitor, 1 µF ATC 920C105KW
C12, C16 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C17 Ceramic capacitor, 0.4 pF ATC 100B 0R4
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R2 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R3 Chip resistor, 2 k-ohms Digi-Key P2.0KECT-ND
R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor, 1 k-ohms Digi-Key P1.0KECT-ND
R6, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND
L1, L2 Ferrite Philips BDS46/3.8.8-452
Reference circuit assembly diagram* (not to scale)
Reference Circuit (cont.)
*Gerber Files for this circuit available on request
a260451ef_assy
10
35V
+
RF_IN RF_OUT
C14
C16
C18 C15
C19
C17
C11
C12
C9
C10
QQ1
C2
Q1
C5
C4
R5
R1R2
R3
R4 C1
C3
R7
R6 C6
R8
L1
L2
C7 C8
VDD
VDD
VDD
C13
PTFA260451E
Data Sheet 9 of 10 Rev. 06, 2008-03-04
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min)
Package Outline Specifications
Package H-30265-2
20.31
[.800]
10.16±0.25
[.400±.010]
2X 2.59±0.38
[.107 ±.015]
FLANGE 9.78
[.385]
2x 7.11
[.280]
7.11
[.280]
15.23
[.600]
4x 1.52
[.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
2X R1.60
[.063]
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.48±0.38
[.137±.015]
1.02
[.040]
SPH 1.57
[.062]
15.60±0.51
[.614±.020]
H-30265-2-1-2303
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 10 of 10 Rev. 06, 2008-03-04
PTFA260451E
Confidential, Limited Internal Distribution
Revision History: 2008-03-04 Data Sheet
Previous version: 2006-07-05, Data Sheet
Page Subjects (major changes since last revision)
All Remove references to alternate products.
al page. Misc updates.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-03-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2004 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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