TLP187(E - TOSHIBA - Product.Network

TLP187

Photocouplers InGaAs Infrared LED & Photo Transistor

TLP187

Start of commercial production

2012-10

1. Applications

Applications

• Programmable Logic Controllers (PLCs)

• I/O Interface Boards

• Home Electric Appliances

2. General

General

TLP187 is a photocoupler that consist of a InGaAs infrared light-emitting diode optically coupled to a darlington

transistor. Housed in a SO6 package, it has a high noise immunity and a high insulation. With the high breakdown

voltage between the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules

of programmable controllers.

3. Features

Features

(1) Collector-emitter voltage: 300 V (min)

(2) Current transfer ratio: 1000 % (min)

(3) Isolation voltage: 3750 Vrms (min)

(4) Operation temperature range:-55 to 110 

(5) Safety standards

UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)

(Note 1)

: EN62368-1 (Pending) (Note 1)

(Note 1)

CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory

Note 1: When a VDE approved type is needed, please designate the Option (V4)

Option (V4)

Option (V4).

4. Packaging and Pin Configuration

Packaging and Pin Configuration

11-4M1S

1: Anode

3: Cathode

4: Emitter

6: Collector

2018-01-30

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TLP187

5. Principle of Operation

Principle of Operation

5.1.

5.1. Mechanical Parameters

Mechanical Parameters

Characteristics

Creepage distances

Clearance

Internal isolation thickness

Min

5.0

0.4

Unit

6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

LED

Detector

Common

Characteristics

Input forward current

Input forward current derating

Input forward current (pulsed)

Input reverse voltage

Input power dissipation

derating

Junction temperature

Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation

derating

Junction temperature

Operating temperature

Storage temperature

Lead soldering temperature

Total power dissipation

Isolation voltage

(Ta ≥ 90 )

(Ta ≥ 25 )

(10 s)

AC, 60 s, R.H. ≤ 60 %

Symbol

∆IF/∆Ta

IFP

∆PD/∆Ta

VCEO

VECO

∆PC/∆Ta

Topr

Tstg

Tsol

BVS

Note

(Note 1)

(Note 2)

Rating

-1.43

100

-2.86

125

300

0.3

150

-1.5

125

-55 to 110

-55 to 125

260

200

3750

Unit

mA/

mW/



mW/



Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 100 µs, f = 1000 Hz

Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are

shorted together.

2018-01-30

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Toshiba Electronic Devices & Storage Corporation

TLP187

7. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

LED

Detector

Characteristics

Input forward voltage

Input reverse current

Input capacitance

Collector-emitter breakdown

voltage

Emitter-collector breakdown

voltage

Dark Current

Collector-emitter capacitance

Symbol

V(BR)CEO

V(BR)ECO

IDARK

CCE

Note Test Condition

IF = 10 mA

VR = 5 V

V = 0 V, f = 1 MHz

IC = 0.1 mA

IE = 0.1 mA

VCE = 200 V

VCE = 200 V, Ta = 85 

V = 0 V, f = 1 MHz

Min

1.1



300

0.3



Typ.

1.25



0.01



Max

1.4



0.2



Unit

µA

8. Coupled Electrical Characteristics (Unless otherwise specified, T

Coupled Electrical Characteristics (Unless otherwise specified, T

Coupled Electrical Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Current transfer ratio

Saturated current transfer ratio

Collector-emitter saturation

voltage

OFF-state collector current

Symbol

IC/IF

IC/IF(sat)

VCE(sat)

IC(off)

Note Test Condition

IF = 1 mA, VCE = 1 V

IF = 10 mA, VCE = 1 V

IC = 10 mA, IF = 1 mA

IC = 100 mA, IF = 10 mA

VF = 0.7 V, VCE = 200 V

Min

1000

500



0.3



Typ.

4000



Max



1.0

1.2

Unit

µA

9. Isolation Characteristics (Unless otherwise specified, T

Isolation Characteristics (Unless otherwise specified, T

Isolation Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Total capacitance (input to

output)

Isolation resistance

Isolation voltage

Symbol

BVS

Note

(Note 1)

Test Conditions

VS = 0 V, f = 1 MHz

VS = 500 V, R.H. ≤ 60 %

AC, 60 s

AC, 1s in oil

DC, 60 s in oil

Min



1 × 1012

3750



Typ.

0.8

1014



10000

Max



Unit

Ω

Vrms

Vdc

Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are

shorted together.

10.

10. Switching Characteristics (Unless otherwise specified, T

Switching Characteristics (Unless otherwise specified, T

Switching Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Rise time

Fall time

Turn-on time

Turn-off time

Turn-on time

Storage time

Turn-off time

Symbol

ton

toff

ton

toff

Note Test Condition

VCC = 10 V, IC = 10 mA,

RL = 100 Ω

See Figure 10.1

RL = 180 Ω, VCC = 10 V,

IF = 16 mA

Min



Typ.

Max



Unit

µs

Fig.

Fig. 10.1

10.1

10.1 Switching Time Test Circuit and Waveform

Switching Time Test Circuit and Waveform

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Toshiba Electronic Devices & Storage Corporation

TLP187

11.

11. Characteristics Curves (Note)

Characteristics Curves (Note)

Fig.

Fig. 11.1

11.1

11.1 I

F - T

- T

- Ta

aFig.

Fig.

Fig. 11.2

11.2

11.2 P

C - T

- T

- Ta

Fig.

Fig. 11.3

11.3

11.3 I

IFP

FP - D

- D

- DR

RFig.

Fig.

Fig. 11.4

11.4

11.4 I

F - V

- V

- VF

Fig.

Fig. 11.5

11.5

11.5 ∆

∆

∆V

/∆

∆

∆T

a - I

- I

- IF

FFig.

Fig.

Fig. 11.6

11.6

11.6 I

IFP

FP - V

- V

- VFP

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Toshiba Electronic Devices & Storage Corporation

TLP187

Fig.

Fig. 11.7

11.7

11.7 I

C - V

- V

- VCEO

CEO

CEO Fig.

Fig.

Fig. 11.8

11.8

11.8 I

C - I

- I

- IF

Fig.

Fig. 11.9

11.9

11.9 I

IDARK

DARK

DARK - T

- T

- Ta

aFig.

Fig.

Fig. 11.10

11.10

11.10 I

C/I

/IF

F - I

- I

- IF

Fig.

Fig. 11.11

11.11

11.11 V

VCE(sat)

CE(sat)

CE(sat) - T

- T

- Ta

aFig.

Fig.

Fig. 11.12

11.12

11.12 I

C - T

- T

- Ta

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Toshiba Electronic Devices & Storage Corporation

TLP187

Fig.

Fig. 11.13

11.13

11.13 Switching Time - R

Switching Time - R

Switching Time - RL

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2018-01-30

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TLP187

12.

12. Soldering and Storage

Soldering and Storage

12.1.

12.1. Precautions for Soldering

Precautions for Soldering

The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective

of whether a soldering iron or a reflow soldering method is used.

• When using soldering reflow.

The soldering temperature profile is based on the package surface temperature.

(See the figure shown below, which is based on the package surface temperature.)

Reflow soldering must be performed once or twice.

The mounting should be completed with the interval from the first to the last mountings being 2 weeks.

Fig.

Fig. 12.1.1

12.1.1

12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used

An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used

• When using soldering flow

Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds.

Mounting condition of 260  within 10 seconds is recommended.

Flow soldering must be performed once.

• When using soldering Iron

Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not

exceeding 350 

Heating by soldering iron must be done only once per lead.

12.2.

12.2. Precautions for General Storage

Precautions for General Storage

• Avoid storage locations where devices may be exposed to moisture or direct sunlight.

• Follow the precautions printed on the packing label of the device for transportation and storage.

• Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %,

respectively.

• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

• When restoring devices after removal from their packing, use anti-static containers.

• Do not allow loads to be applied directly to devices while they are in storage.

• If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

2018-01-30

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TLP187

Package Dimensions

Unit: mm

Weight: 0.08 g (typ.)

Package Name(s)

TOSHIBA: 11-4M1S

2018-01-30

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TLP187

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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

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