MRF8P9300HR6 MRF8P9300HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 19.6 35.4 6.0 --37.3
940 MHz 19.6 35.6 6.0 --37.1
960 MHz 19.4 35.8 5.9 --36.7
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
!Typical Pout @ 1 dB Compression Point ≃326 Watts CW
880 MHz
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz 20.5 35.2 6.0 --36.1
880 MHz 20.7 36.0 6.0 --36.1
895 MHz 20.6 37.0 6.0 --35.8
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!Designed for Digital Predistortion Error Correction Systems
!Optimized for Doherty Applications
!RoHS Compliant
!In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
Freescale Semiconductor
Technical Data
920--960 MHz, 100 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P9300HR6
MRF8P9300HSR6
CASE 375D--05, STYLE 1
NI--1230
MRF8P9300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P9300HSR6
(Top View)
RFoutA/VDSA
31
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
$Freescale Semiconductor, Inc., 2009--2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 75#C, 100 W CW, 28 Vdc, IDQ = 2400 mA
Case Temperature 80#C, 300 W CW, 28 Vdc, IDQ = 2400 mA
R%JC
0.22
0.20
#C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (3)
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics
Gate Threshold Voltage (3)
(VDS =10Vdc,I
D= 400 &Adc)
VGS(th) 1.5 2.3 3Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DQ = 2400 mA, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain--Source On--Voltage (3)
(VGS =10Vdc,I
D=3Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 2400 mA, Pout = 100 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 18.0 19.4 21.0 dB
Drain Efficiency "D32.0 35.8 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.6 5.9 —dB
Adjacent Channel Power Ratio ACPR —--36.7 --34.0 dBc
Input Return Loss IRL — -- 1 6 -- 1 0 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 2400 mA, Pout = 100 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz 19.6 35.4 6.0 --37.3 -- 9
940 MHz 19.6 35.6 6.0 --37.1 -- 1 2
960 MHz 19.4 35.8 5.9 --36.7 -- 1 6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
(continued)
MRF8P9300HR6 MRF8P9300HSR6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 2400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —326 — W
IMD Symmetry @ 310 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—17 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —30 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 100 W Avg. GF—0.16 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.012 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB —0.008 —dBm/#C
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 2400 mA, Pout =
100 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz 20.5 35.2 6.0 --36.1 -- 11
880 MHz 20.7 36.0 6.0 --36.1 -- 1 4
895 MHz 20.6 37.0 6.0 --35.8 -- 1 6
4
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout
CUT OUT AREA
MRF8P9300H
C21
B2
C17 C15
C12*
C13*
C19
C7
C9
C8
C6
C5
C4
C3
C2
C1
C11*
C10*
C16 C14
C20
B1
C42
C44
C46
C48
C50 C52
C40
C36
C32
C43
C45
C47
C51
C49
C38
C39 C35
C34
C30
C31
C33
C23
C22
C25
C24
C26
C27
C29
C28
C37
C41
C53
*C10, C11, C12, and C13 are mounted vertically.
C18
Rev. 2
VGS
VGS VDD
VDD
Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Short RF Bead 2743019447 Fair--Rite
C1 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC
C2, C3, C16, C17, C26, C27 39 pF Chip Capacitors ATC100B390JT500XT ATC
C4, C5, C28, C29, C32, C33, C34, C35 1.1 pF Chip Capacitors ATC100B1R1BT500XT ATC
C6, C7 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC
C8, C9 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C10, C11, C12, C13 3.0 pF Chip Capacitors ATC100B3R0CT500XT ATC
C14, C15, C42, C43 10 pF Chip Capacitors ATC100B100JT500XT ATC
C18, C19 2.2 &F, 50 V Chip Capacitors C1825C225J5RAC--TU Kemet
C20, C21 47 &F, 50 V Electrolytic Capacitors 476KXM050M Illinois Capacitor
C22, C23 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC
C24, C25 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC
C30, C31 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC
C36, C37 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC
C38, C39 4.3 pF Chip Capacitors ATC100B4R3CT500XT ATC
C40, C41 11 pF Chip Capacitors ATC100B110JT500XT ATC
C44, C45 20 pF Chip Capacitors ATC100B200JT500XT ATC
C46, C47 30 pF Chip Capacitors ATC100B300JT500XT ATC
C48, C49, C50, C51 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C52, C53 470 &F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
PCB 0.030),*r=3.50 RF--35 Taconic
MRF8P9300HR6 MRF8P9300HSR6
5
RF Device Data
Freescale Semiconductor
4
+
2
+
2
+
4
+
2
+
2
+
Single--ended
Quadrature combined
Doherty
Push--pull
4
+
4
+
4
+
4
+
Figure 3. Possible Circuit Topologies
Devices are tested in a
parallel configuration
6
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 100 Watts Avg.
-- 1 0
-- 2 0
14
20
-- 4 0
50
40
30
-- 3 0
-- 3 5
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
19
18
17
840 860 880 900 920 940 960 980
20
-- 3 0
PARC
PARC (dB)
-- 2
0
-- 1
-- 3
ACPR (dBc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 310 W (PEP), IDQ = 2400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
65
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
45 85 105 205
0
60
50
40
30
20
10
"D,DRAIN EFFICIENCY (%)
--1dB=80.0W
165
"D
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
21
Gps, POWER GAIN (dB)
20
19
18
17
16
15
Gps
VDD =28Vdc,I
DQ = 2400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--2dB=110.0W
--3 dB = 155.2 W
16
15
0
VDD =28Vdc,P
out = 100 W (Avg.), IDQ = 2400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
125 145 185
ACPR
MRF8P9300HR6 MRF8P9300HSR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
15
21
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
10 100 400
10
-- 6 0
ACPR (dBc)
20
19
0
-- 2 0
Figure 8. Broadband Frequency Response
-- 1 5
25
600
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 2400 mA
10
5
-- 5
700
GAIN (dB)
20 Gain
800 900 1000 1100 1200
IRL
-- 2 5
15
0
-- 5
-- 1 0
-- 1 5
IRL (dB)
-- 1 0 -- 2 0
f = 920 MHz
18
17
16 -- 5 0
-- 4 0
-- 3 0
940 MHz
960 MHz
920 MHz
0
15 5
10
Gps
940 MHz
960 MHz
VDD =28Vdc,I
DQ = 2400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
8
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
VDD =28Vdc,I
DQA =I
DQB = 1200 mA, Pout = 100 W Avg.
f
MHz
Zsource
-
Zload
-
840 1.74 -- j1.71 0.98 -- j0.97
860 1.74 -- j1.42 0.95 -- j0.95
880 1.59 -- j1.19 0.92 -- j0.92
900 1.46 -- j0.91 0.90 -- j0.90
920 1.51 -- j0.63 0.87 -- j0.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 11. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P9300HR6 MRF8P9300HSR6
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD =28
V
dc, IDQ = 1200 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
54
52
50
37
55
53
47
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
51
56
58
35343327 383231
57
49
48
30
f = 940 MHz
f = 960 MHz
f = 920 MHz
Ideal
Actual
2928
f
(MHz)
P1dB
Watts dBm
920 229 53.6
940 214 53.3
960 219 53.4
Test Impedances per Compression Level
f
(MHz)
Zsource
-
Zload
-
920 P1dB 1.58 -- j2.40 0.84 -- j1.69
940 P1dB 1.77 -- j3.02 0.76 -- j1.90
960 P1dB 1.98 -- j3.46 0.75 -- j1.51
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on a per side basis.
10
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
Figure 13. MRF8P9300HR6(HSR6) Test Circuit Component Layout — 865--895 MHz
C22
B2
C20
C18
C16
C12
C14
C8
C10
C9
C7
C11
C13
C17
C15
B1
C43
C45
C47
C49
C51
C53
C41
C39
C33
C37
C38 C36
C35
C31
C32
C34
C24
C23
C26
C27
C30
C29
C42 C28
C25
C40
C52
C50
C44 C48
C46
C54
CUT OUT AREA
C2
C1
C3
C5
C6
C4
C19
C21
MRF8P9300H
Rev. 2
Table 6. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values — 865--895 MHz
Part Description Part Number Manufacturer
B1, B2 Short Ferrite bead 2743019447 Fair--Rite
C1 0.2 pF Chip Capacitor ATC100B0R2CT500XT ATC
C2 0.3 pF Chip Capacitor ATC100B0R3CT500XT ATC
C3, C4, C17, C18, C27, C28 39 pF Chip Capacitors ATC100B390JT500XT ATC
C5, C6, C29, C30, C33, C34, C35, C36 1.1 pF Chip Capacitors ATC100B1R1JP500XT ATC
C7, C8, C37, C38 4.3 pF Chip Capacitors ATC100B4R3JP500XT ATC
C9, C10 7.5 pF Chip Capacitors ATC100B7R5JP500XT ATC
C11, C12, C13, C14 3.0 pF Chip Capacitors ATC100B3R0JP500XT ATC
C15, C16, C43, C44 10 pF Chip Capacitors ATC100B100JT500XT ATC
C19, C20 2.2 &F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C21, C22 47 &F, 50 V Electrolytic Capacitors 476KXM063M Illinois Capacitor
C23, C24 1.0 pF Chip Capacitors ATC100B1R0JP500XT ATC
C25, C26 0.5 pF Chip Capacitors ATC100B0R5CT500XT ATC
C31, C32 0.8 pF Chip Capacitors ATC100B0R8JP500XT ATC
C39, C40 4.7 pF Chip Capacitors ATC100B4R7JP500XT ATC
C41, C42 11 pF Chip Capacitors ATC100B110JT500XT ATC
C45, C46 20 pF Chip Capacitors ATC100B200JT500XT ATC
C47, C48 30 pF Chip Capacitors ATC100B300JT500XT ATC
C49, C50, C51, C52 10 &F, 50 V Chip Capacitors GRM55DR61HT106KA88L Murata
C53, C54 470 &F, 63 V Electrolytic Capacitors KME63VB471M12x25LL Chemi--Con
PCB 0.030),*r=3.5 RF--35 Taconic
MRF8P9300HR6 MRF8P9300HSR6
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 865--895 MHz
IRL, INPUT RETURN LOSS (dB)
820
IRL
ACPR
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 100 Watts Avg.
-- 1 0
-- 2 0
17
22
-- 4 0
44
41
38
-- 3 2
-- 3 4
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
21.5
21
20.5
840 860 880 900 920 940 960 980
-- 3 0
-- 2 5
PARC
PARCz (dB)
-- 2
-- 0 . 5
-- 1
-- 3
ACPR (dBc)
20
19.5 0
VDD =28Vdc,P
out = 100 W (Avg.)
IDQ = 2400 mA, Single--Carrier W--CDMA
18.5
18
17.5
19
35
32
-- 3 6
-- 3 8
-- 5
-- 1 5
-- 1 . 5
-- 2 . 5
Gps
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
16
22
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
10 100 300
10
-- 6 0
ACPR (dBc)
21
20
0
-- 2 0
Figure 16. Broadband Frequency Response
0
24
620
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 2400 mA
12
4
690
GAIN (dB)
20
Gain
900 970 1110 1180
IRL
-- 2 4
0
-- 8
-- 1 2
-- 1 6
IRL (dB)
-- 2 0
19
18
17 -- 5 0
-- 4 0
-- 3 0
865 MHz
8
16
-- 4
Gps
880 MHz 895 MHz
865 MHz
880 MHz
895 MHz
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
VDD =28Vdc,I
DQ = 2400 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
760 830 1040
12
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
VDD =28Vdc,I
DQ = 2400 mA, Pout = 100 W Avg.
f
MHz
Zsource
-
Zload
-
820 0.45 -- j0.78 1.72 -- j0.73
840 0.42 + j0.34 1.67 -- j0.39
860 0.39 + j0.05 1.59 -- j0.06
880 0.40 + j0.05 1.44 -- j0.17
900 0.49 + j0.84 1.35 + j0.35
920 0.75 + j1.32 1.30 + j0.61
940 1.58 + j1.77 1.32 + 0.93
960 2.16 + j0.62 1.27 + j1.14
980 1.37 + j0.64 1.21 + j1.30
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 17. Series Equivalent Source and Load Impedance — 865--895 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P9300HR6 MRF8P9300HSR6
13
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
MRF8P9300HR6 MRF8P9300HSR6
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RF Device Data
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2009 !Initial Release of Data Sheet
1May 2010 !Changed ESD Human Body Model rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
!Added Alternate Characterization for 865--895 MHz Frequency Band as follows:
-- Typical Performance bullet, p. 1
-- Typical Broadband Performance table, p. 3
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 10
-- Fig. 14, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 100 Watts
Avg.,p.11
-- Fig. 15, Single--Carrier W--CDMA Power Gain, Drain, Efficiency and ACPR versus Output Power, p. 11
-- Fig. 16, Broadband Frequency Response, p. 11
-- Fig. 17, Series Equivalent Source and Load Impedance, p. 12
1.1 July 2010 !Changed 850 MHz to 880 MHz in the Typical Broadband Performance table for the 865--895 MHz frequency
band, p. 3
!Added connection pad identifiers to Fig. 2, Test Circuit Component Layout, p. 4
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MRF8P9300HR6 MRF8P9300HSR6
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Document Number: MRF8P9300H
Rev. 1.1, 7/2010
