AO6402A 30V N-Channel MOSFET General Description Product Summary The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 7.5A RDS(ON) < 24m RDS(ON) < 35m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current A,F Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead C 20 V ID 6.0 IDM 64 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t 10s Steady-State Steady-State A 2.0 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 7.5 TA=70C TA=25C Power Dissipation Maximum 30 RJA RJL Typ 48 74 54 C Max 62.5 110 68 Units C/W C/W C/W www.aosmd.com AO6402A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 TJ=55C VGS=10V, ID=7.5A TJ=125C VGS=4.5V, ID=5.6A gFS Forward Transconductance VDS=5V, ID=7.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=0V, f=1MHz A 100 nA 2.1 2.6 V 17.3 24 25 34 25 35 m 1 V 2.5 A A 20 0.75 373 VGS=0V, VDS=15V, f=1MHz Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ m S 448 pF 67 pF 41 pF 2 2.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.2 11 nC Qg(4.5V) Total Gate Charge 3.5 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=7.5A 1.3 nC 1.7 nC 4.5 6.5 ns 2.7 4.5 ns 14.9 23 ns 2.9 5.5 ns 10.5 12.6 ns nC VGS=10V, VDS=15V, RL=2, RGEN=3 IF=7.5A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/s 4.5 5.4 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. Rev4: April. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V 6V 50 VDS=5V 12 VDS=5V 9 4.5V ID(A) ID (A) 40 30 6 20 VGS=3.5V 10 0 25 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance VGS=4.5V 35 RDS(ON) (m ) 2.5 3 1.8 40 30 25 20 15 1.6 VGS=10V Id=7.5A 5 10 15 4 4.5 20 67 41 1.2 1.8 1.2 1 VGS=4.5V Id=5.6A 4.5 0.8 0.6 0 3.5 11 5 1.4 VGS=10V 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 23 5.5 10.5 12.6 75 100 125 150 4.5 Temperature (C) 5.4 175 Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7.5A 1.0E+00 1.0E-01 40 125C IS (A) RDS(ON) (m ) 2 VGS(Volts) Figure 2: Transfer Characteristics 45 50 25C 125C 125C 3 125C 1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 25C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=7.5A 500 Capacitance (pF) VGS (Volts) 8 6 4 300 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 100s 1.0 1ms 10ms 0.1 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=150C TA=25C RDS(ON) limited TJ(Max)=150C TA=25C 0.1s DC Power (W) 10.0 5 30 10s ID (Amps) Coss 200 2 20 10 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Z JA Normalized Transient Thermal Resistance Ciss 400 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com AO6402A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com