High IIP3 PIN Diode Variable Attenuator
0.80-1.0 GHz
MA4VAT904-1061T
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V2
1
Features
•1.0 dB Insertion Loss, Typical
•12 dB Return Loss, Typical
•25 dB Attenuation, Typical
•45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
•SOIC-8 Surface Mount Package
•RoHs Compliant
Extra Features
•Covers the following Bands:
•GSM
•AMPS
•Usable Bandwidth: 0.60 GHz to 1.20 GHz
•1.5 dB Insertion Loss, Typical
•1.8:1 VSWR, Typical
•18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT904-1061T is a HMIC PIN Diode
Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as D.C.
Voltage (Current) is applied.
This device operates from 0 to 1.9 Volts at 1.89 mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT904-1061T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
•Lower Insertion Loss
•Lower distortion through attenuation
•Larger dynamic range for wide spread spectrum
applications
Absolute Maximum Ratings
@ +25 °C
Notes:
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
SOIC-8 PIN Configuration (Topview)
PIN Function Comments
1 DC1
2 GND
3 GND
4 RFin/out Symetrical as RF Input/Ouput
5 RFout/in Symetrical as RF Input/Ouput
6 GND
7 GND
8 DC2
Parameter Maximum Ratings
Storage Temperature -65 °C to +150 °C
Junction Temperature +175 °C
RF C.W. Incident Power +33 dBm C.W.
Control Current 50 mA per Diode
Reversed Current @ -30 V 50nA
Operating Temperature -40 °C to +85 °C