1. General description
The SA604A is an improved monolithic low-power FM IF system incorporating two limiting
intermediate frequency amplifiers, quadrature detector, muting, logarithmic received
signal strength indicator, and voltage regulator. The SA604A features higher IF bandwid th
(25 MHz) and temperature compensated RSSI and limiters providing wide RSSI dynamic
range, high IF/limiter gain and overall stability. The SA604A is available in an SO16
(surface-mounted miniature) and HXQFN16 package.
2. Features and benefits
Low power consum pt ion : 3.3 mA typical
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
Two audio outputs — muted and un-muted
Low external com p on e nt coun t; suitable for crystal/ceramic filters
Excellent sensitivity: 1.5 V across input pins (0.22 V into 50 matching network) for
12 dB SINAD (Signal-to-Noise and Distortion ratio) at 455 kHz
SA604A meets cellular radio specifications
3. Applications
Cellular radio FM IF
High-performance communication s receivers
Intermediate frequency amplification and detection up to 25 MHz
RF level meter
Spectrum analyzer
Instrumentation
FSK and ASK data receivers
SA604A
High-performance low-power FM IF system
Rev. 4.3 — 13 July 2016 Product data sheet
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 2 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
4. Ordering information
4.1 Ordering options
Table 1. Ordering information
Type number Topside
marking Package
Name Description Version
SA604AD/01 SA604AD SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
SA604AD/02 SA604AD SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
SA604AHR 04A HXQFN16 plastic thermal enhanced extremely thin quad flat package;
no leads; 16 terminals; body 3 30.5 mm SOT1039-2
Table 2. Ordering options
Type number Orderable
part number Package Packing method Minimum
order
quantity
Temperature
SA604AD/01 SA604AD/01,112 SO16 Standard marking
* IC’s tube - DSC bulk pack 1000 Tamb =40 C to +85 C
SA604AD/01,118 SO16 Reel 13” Q1/T1
*Standard mark SMD 2500 Tamb =40 C to +85 C
SA604AD/02 SA604AD/02J SO16 Reel 13” Q1/T1
*Standard mark SMD 2500 Tamb =40 C to +85 C
SA604AHR SA604AHRZ HXQFN16 Reel 7” Q2/T3
*Standard mark SMD 1500 Tamb =40 C to +85 C
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Product data sheet Rev. 4.3 — 13 July 2016 3 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
5. Block diagram
Pin numbers for SO16; HXQFN16 pins shown in parentheses
Fig 1. Block diagram of SA604A
aaa-012738
VOLTAGE
REGULATOR
SIGNAL
STRENGTH
INDICATOR
1(14) 2(15) 3(16) 4(1) 5(2) 6(3) 7(4) 8(5)
16(13) 15(12) 14(11) 13(10) 12(9) 11(8) 10(7) 9(6)
GND
VCC
GND
mute
IF amp limiter
quadrature
detector
IF_AMP_INPUT
IF_AMP_DECOUPL
IF_AMP_OUTPUT
LIMITER_INPUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUTPUT
IF_AMP_DECOUPL
MUTE_INPUT
RSSI_OUTPUT
MUTE_AUD_OUTP
UNMUTE_AUD_OUTP
QUADRATURE_INPUT
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Product data sheet Rev. 4.3 — 13 July 2016 4 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
6. Pinning information
6.1 Pinning
Fig 2. Pin configuration for SO16
(1) Die Attach Paddle (DAP).
Fig 3. Pin configuration for HXQFN16
SA604AD/0x
IF_AMP_DECOUPL IF_AMP_INPUT
GND IF_AMP_DECOUPL
MUTE_INPUT IF_AMP_OUTPUT
VCC GND
RSSI_OUTPUT LIMITER_INPUT
MUTE_AUD_OUTP LIMITER_DECOUPL
UNMUTE_AUD_OUTP LIMITER_DECOUPL
QUADRATURE_INPUT LIMITER_OUTPUT
aaa-012737
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
aaa-016798
SA604AHR
(1)
Transparent top view
UNMUTE_AUD_OUTP LIMITER_INPUT
MUTE_AUD_OUTP GND
RSSI_OUTP IF_AMP_OUTPUT
VCC IF_AMP_DECOUPL
QUADRATURE_INPUT
LIMITER_OUTPUT
LIMITER_DECOUPL
LIMITER_DECOUPL
MUTE_INPUT
GND
IF_AMP_DECOUPL
IF_AMP_INPUT
4 9
310
211
112
5
6
7
8
16
15
14
13
terminal 1
index area
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Product data sheet Rev. 4.3 — 13 July 2016 5 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
6.2 Pin description
[1] HXQFN16 package supply ground is connected to both GND pin and exposed center pad. GND pin must
be connected to supply ground for proper device operation. For enhanced thermal, electrical, and board
level performance, the exposed pad must be soldered to the board using a corresponding thermal pad on
the board. For proper heat conduction through the board, thermal vias must be incorporated in the PCB in
the thermal pad region.
Table 3. Pin description
Symbol Pin Description
SO16 HXQFN16
IF_AMP_DECOUPL 1 14 IF amplifier decoupling
GND 2 15 ground
MUTE_INPUT 3 16 mute input
VCC 4 1 supply voltage
RSSI_OUTPUT 5 2 RSSI output
MUTE_AUD_ OU TP 6 3 mute au dio output
UNMUTE_AUD_OUTP 7 4 unmute audio output
QUADRATURE_INPUT 8 5 quadrature input
LIMITER_OUTPUT 9 6 limiter output
LIMITER_DECOUPL 10 7 limiter decoupling
LIMITER_DECOUPL 11 8 limiter decoupling
LIMITER_INPUT 12 9 limiter input
GND 13 10[1] ground
IF_AMP_OUTPUT 14 11 IF amplifier output
IF_AMP_DECOUPL 15 12 IF amplifier decoupling
IF_AMP_INPUT 16 13 IF amplifier input
- - DAP exposed Die Attach Paddle
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Product data sheet Rev. 4.3 — 13 July 2016 6 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
7. Functional description
Fig 4. Equivalent circuit
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SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 7 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
8. Limiting values
9. Thermal characteristics
10. Static characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage - 9 V
Tstg storage temperature 65 +150 C
Tamb ambient temperature operating 40 +85 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-a) transient thermal imped ance
from jun c tion to ambient SO16 package 90 K/W
HXQFN16 package 75 K/W
Table 6. Static characteristics
VCC =6V; T
amb =25
C; unless specified otherwise.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage 4.5 - 8.0 V
ICC supply current 2.5 3.3 4.0 mA
Vth threshold voltage mute switch-on 1.7 - - V
mute switch-off - - 1.0 V
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Product data sheet Rev. 4.3 — 13 July 2016 8 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
11. Dynamic characteristics
[1] IF level is referenced to level at IF pin which is at 1.5 k input impedance.
Table 7. Dynamic characteristics
Typical reading at Tamb =25
C; VCC = 6 V, unless specified otherwise. IF frequency = 455 kHz; IF level =
47 dBm;
FM modulation = 1 kHz with
8 kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 14. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characterist ics. The limits do not represen t th e ul timate performance limits of the device. Use of an optimized RF layout will
improve many of the listed parameters.
Symbol Parameter Conditions Min Typ Max Unit
input limiting 3 dB test at pin IF_AMP_INPUT; per 50 -92 - dBm
AM AM rejection 80 % AM 1 kHz 30 34 - dB
recovered audio level 15 nF de-emphasis; RMS value 80 175 260 mV
150 pF de-emphasis; RMS value - 530 - mV
THD total harmonic distortion 34 42 - dB
S/N signal-to-noise ratio no modulation for noise - 73 - dB
Vo(RSSI) RSSI output voltage IF level = 118 dBm [1] 0 160 650 mV
IF level = 68 dBm (SA604AD/01,
SA604AHR) [1] 1.9 2.65 3.1 V
IF level = 68 dBm (SA604AD/02) [1] 2.1 2.65 3.1 V
IF level = 18 dBm [1] 4.0 4.85 5.6 V
RSSI(range) RSSI range R4 = 100 k (pin RSSI_OUTPUT) - 90 - dB
RSSI accuracy R4 = 100 k (pin RSSI_OUTPUT) - 1.5 - dB
Zi(IF) IF input impedance 1.4 1.6 - k
Zo(IF) IF output impedance 0.85 1.0 - k
Zi(lim) limiter input impedance 1.4 1.6 - k
Rooutput resistance unmuted audio - 58 - k
muted audio - 58 - k
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Product data sheet Rev. 4.3 — 13 July 2016 9 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
12. Performance curves
Normalized IF frequency:
(1) Q = 10
(2) Q = 20
(3) Q = 40
(4) Q = 60
(5) Q = 80
(6) Q = 100
Fig 5. Phase as a function of normalized IF frequency
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Product data sheet Rev. 4.3 — 13 July 2016 10 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
13. Application information
Fig 6. Typical application cellular radio (45 MHz RF input and 455 kHz IF)
aaa-012739
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
SA604A
10
pF
0.1 µF
DATA
OUT
AUDIO
OUT
100
RSSI
+6 V
MUTE
0.1
µF
0.1 µF
0.1
µF
455 kHz
ceramic filter
0.1 µF 0.1 µF
8
7
6
5
1
2
3
4
SA602A
45 MHz
+6 V
100 nF
5.5 µH
10 nF6.8 µF
RF input
0.21 µH
to
0.28 µH
100 nF
47 pF
220 pF
455 kHz
Q = 20
C-MSG
FILTER
455 kHz
ceramic filter
5.6
pF
0.5 µH
to
1.3 µH 1 nF 22 pF SA604A
test circuit
44.545
3rd overture
XTAL
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Product data sheet Rev. 4.3 — 13 July 2016 11 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
13.1 Circuit description
The SA604A is a very high gain, high frequency device. Correct operation is not possible
if good RF layout and gain st age practices are not used. The SA604A cannot be
evaluated independent of circuit, component s, and board layout. A physical layout which
correlates to th e elec tr ical limits is shown in Figure 17. This configuration ca n be use d as
the basis for prod uc tio n layout.
The SA604A is an IF signal processing system suitable for IF frequencies as high as
21.4 MHz. The device consists of two limiting amplifiers, quadrature de tector, direct audio
output, mute d au d io ou tp ut, and signal stre ng th indicator (with log output characteristic).
The equivalent circuit is shown in Figure 4.
Figure 7 is the performance of the typical cellular ra dio appli ca tion shown in Figure 6 with
45 MHz RF input and 455 kHz IF.
Audio output: C message weighted; 0 dB reference = recovered audio for 8 kHz peak deviation (dB)
Fig 7. Performance of the typi cal cellular rad io a pplication
AUDIO
RSSI (VOLTS)
THD + NOISE
NOISE
AM (80 % MOD)
aaa-012849
10
−120
−80
1
2
3
4
−60
−40
−20
(dB)
NOISE
A
M (80 % MOD)
THD + NOISE RSSI
(V)
−100 −80 −60 −40 −20
100 1 k
SA604A IF INPUT (µV) (1500 Ω)
SA602A RF INPUT (dBm) (50 Ω)
100 k10 k
0
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Product data sheet Rev. 4.3 — 13 July 2016 12 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
13.2 IF amplifiers
The IF amplifier section consists of two log-limiting stages. The first consists of two
differential amplifiers with 39 dB of gain and a small signal bandwidth of 41 MHz (when
driven from a 50 source). The output of the first limiter is a low-impedance emitter
follower with 1 k of equivalent series resistance. The second limiting stage consists of
three differential amplifiers with a gain of 62 dB and a small signal AC bandwidth of
28 MHz. The outputs of th e final differential stage are buffered to the internal quadrature
detector. One of the outputs is available at pin LIMITER_OUTPUT to drive an external
quadrature capacitor and L/C quadrature tank.
Both of the limiting amplifier sta ges are DC biased using feed back. The buf fered output of
the final differential amplifier is fed back to the input through 42 kresistors. As shown in
Figure 4, the input impedance is established for each stage by tapping one of the
feedback resistors 1.6 k from the input. It requires one additional decoupling capacitor
from the tap point to ground.
Because of the very high gain, bandwidth and input impedance of the limiters, there is a
very real potential for instability at IF frequencies above 455 kHz. The basic phenomenon
is shown in Figure 10. Distributed feedback (capacitance, inductance and ra diated fields)
forms a divider from the output of the limiters back to the inpu ts (including RF inpu t). If this
feedback divider does not cause attenuation greater than the gain of the forward path,
then oscillation or low-level regeneration is likely. If regeneration occurs, two symptoms
may be present:
1. The RSSI output is high with no signal input (should nominally be 250 mV or lower).
2. The demodulated output demonstrates a threshold. Above a certain input level, the
limited signal begins to dominate the regeneration, and the demodulator begins to
operate in a normal manner.
There are three primary ways to deal with regeneration:
1. Minimize the feedback by gain stage isolation.
2. Lower the stage input imp e dances, thus increasin g th e fe edba ck attenuation fac to r.
3. Reduce the gain. Gain reduction can effectively be acco mplished by adding
attenuation between stages, which can also lower the input impedance. Examples of
impedance/gain adjustment are shown in Figure 11. Reduced gain results in reduced
limiting sensitivity.
A feature of the SA604A IF amplifiers, which is not specified, is low phase shift. The
SA604A is fabricated with a 10 GHz process with very small collector capacitance. It is
advantageous in some applications that the phase shift changes only a few degrees over
a wide range of signal input amplitudes.
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Product data sheet Rev. 4.3 — 13 July 2016 13 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
Fig 8. First limiter bia s Fig 9. Second limiter a nd qu adrature detector
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a. Terminating HIGH imped ance filters with transformation to LOW impedance
b. LOW impedance termination and gain reduction
Fig 11. Practical ter mi na tion
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SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 14 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
13.3 Stability considerations
The high gain and bandwidth of the SA604A in combination with its very low currents
permit circuit implementation with superior performance. However, stability must be
maintained and, to do that, every possible feedback mechanism must be addressed.
These mechanisms are:
supply lines and ground
stray layout inductances and capacit ances
radiated fields
phase shift
As the system IF increases, so must the attention to fields and strays. However, ground
and supply loop s cannot be over looked, especially at lower frequencies. Even a t 455 kHz,
if the supply line is not decoupled, using the test layout in Figure 17, instability occurs. To
decouple, use two high-quality RF capacitors, a 0.1 F monolithic on the VCC pin , an d a
6.8 F tantalum on the supply line. An electrolytic is not an adequate substitute. At
10.7 MHz, a 1 F tantalum has proven acce ptable with this lay out. Eve ry lay ou t mu st be
evaluated on its own merit, but do not underestimate the importance of good supply
bypass.
At 455 kHz, if the layout of Figure 17 or one substantially similar is used, ceramic filters
can be connected directly to the input and between limiter stages with no special
consideration. At frequencies above 2 MHz, some input impedance reduction is usually
necessary. Figure 11 demonstrates a pr actical means.
As illustrated in Figure 12, 430 external resistors are applied in parallel to the internal
1.6 k load resistors, thus prese nting ap pr oximately 330 to the filters. The input filter is
a crystal type for narrowband selectivity. The filter is terminated with a tank which
transforms to 330 . The interstage filter is a ceramic type which does not contribute to
system selectivity, but does suppress wideband noise and stray signal pickup. In
wideband 10.7 MHz IFs the input filte r can also be ceramic, directly connected to pin
IF_AMP_INPUT.
Fig 12. Crystal input filter with ceramic interstage filter
123
SA604A
430 Ω
430 Ω
45678
16 15 14 13 12 11 10 9
aaa-012850
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Product data sheet Rev. 4.3 — 13 July 2016 15 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
In some products, it may be impractical to utilize shielding, but this mechanism may be
appropriate to 10.7 MHz and 21.4 MHz IF. One of the benefits of low current is lower
radiated field strength, but lower does not mean non-existent. A spectrum analyzer with
an active probe clearly sh ows IF energy with the pr obe held in the proximity of the second
limiter output or quadrature coil. No specific recommendations are provided, but
mechanical shielding should be considered if layout, bypass, and input impedance
reduction do not solve a stubborn instability.
The final stability consideration is phase shift. The phase shift of the limiters is very low,
but there is phase shift contribution from the quadrature tank and the filters. Most filters
demonstra te a large ph ase shift across their passband (esp ec ially at the ed g es ). If th e
quadrature detector is tuned to the edge of the filter passband, the combined filter and
quadrature phase shift can aggravate stability. It is not usually a problem, but should be
kept in mind.
13.4 Quadrature detector
Figure 9 shows an equivalent circuit of the SA604A quadrature detector. It is a multiplier
cell similar to a mixer stage. Instead of mixing two different frequencies, it mixes two
signals of common frequency but differe nt phase. Internal to the device, a constant
amplitude (limited) signal is differentially applied to the lower port of the multiplier. The
same signal is applied single-ended to an external capacitor at pin LIMITER_OUTPUT.
There is a 90 phase shift across the plates of this capacitor. The phase shifted signal
applied to the upper po rt of the multiplier is at pin QUADRATURE_INPUT. A quadrature t ank
(parallel L/C network) permits frequency selective phase shif ting at the IF frequency. This
quadrature tank must be returned to ground through a DC blocking capacitor.
The loaded Q of the quadrature tank impacts three fundamental aspects of the detector:
distortion, maximum modulated peak deviation, and audio output amplitude. Typical
quadrature curves are illustrated in Figure 5. The phase angle translates to a shift in the
multiplier output voltage.
Thus a small deviation gives a large output with a high Q tank. However, as the deviation
from resonance increases, the non-linearity of the curve increases (distortion). With too
much deviation, th e sign a l is outside the qu adrature region (limiting the peak deviation
which can be demodulated). If the same peak deviation is applied to a lower Q tank, the
deviation remains in a region of the curve which is more linear (less distortion). However,
it creates a smaller phase an gle ( smalle r ou tp ut amp litude ). Thu s the Q of the q uadra tu re
tank must be tailored to the design. Basic equations and an example for determining Q
are shown in Section 13.5. This explanation includes first-order effects only.
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Product data sheet Rev. 4.3 — 13 July 2016 16 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
13.5 Frequency discriminator design equations
(1)
where: and
From Equation 1, the phase shift between nodes 1 and 2, or the phase across CS will be:
(2)
Figure 5 is the plot of as a function of . It is not able that at , the phase shif t
is and the response is close to a straight line with a slope of .
The signal VO would have a phase shift of with respect to the VIN.
If VIN =A sin(t) =>
(3)
Multiplying the two signals in the mixer, and low pass filtering yields:
(4)
After low pass filtering =>
(5)
Fig 13. Frequency discriminator
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1
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2
---2Q1
1
----------+sin=
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A2sin t t
2
---2Q1
1
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2
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1
----------cos 1
2
---A22Q1
1
----------sin==
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Product data sheet Rev. 4.3 — 13 July 2016 17 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
(6)
For << which is discriminated FM output. Note that is the deviation
frequency from the carrier 1. Example: at 455 kHz IF, with 5 kHz FM deviation, the
maximum normalized frequ ency is (455 5)/455 kHz = 1.010 or 0.990.
Go to the frequency as a function of normalized frequency curves (Figure 5) and draw a
vertical straight line at = 1.01.
The curves with Q = 100 , Q = 40 a re not linea r, but Q = 20 and less shows better lin ear ity
for this application. Too small Q decreases the amplitude of the discriminated FM signal.
Equation 6 => Choose a Q = 20.
The internal resistance of the SA604A is 40 k From , and then
, it results that CP + CS = 174 pF and L = 0.7 mH.
A more exact analysis including the source resistance of the previous stage shows a
series and a parallel resonance in the phase detector tank. To make the parallel and
series resonances close, and to get maximum attenuation of higher harmonics at
455 kHz IF, a CS= 10 pF and CP= 16 4 pF provided th e be st re su lts. For comm e rc ial
purposes, values of 150 pF or 180 pF may be practical. A variable inductor which can be
adjusted around 0.7 mH should be chosen and optimized for minimum distortion. (For
10.7 MHz, a value of CS= 1 pF is recommended.)
13.6 Audio outputs
Two audio outputs are provided. Both are PNP current-to-voltage converters with 55 k
nominal internal loads. The unmute d output is always active to permi t the use of signaling
tones in systems such as cellular radio. The other output can be muted with 70 dB typical
attenuation. The two outputs have an internal 180 phase difference.
The nominal frequency response of the au dio outputs is 300 kHz. This response can be
increased with the a ddition of exter nal resistors between the outp ut pins a nd gro und. The
resistors are pla ce d in parallel with the int erna l 55 k resistors and they lower the output
time constant. The output structure is a current-to-volt age converter where current is
driven into the resistance, crea tin g a vo ltage drop. By ad din g ex te rn al parallel resistance,
it also lowers the output audio amplitude and DC level.
This technique of audio bandwidth expansion can be effective in many applications such
as SCA receivers and data transceivers. Because the two outputs h ave a 180 phase
relationship, FSK demodulation can be accomplished b y ap plying the two outputs
differentially across the input s of an o p amp or comparator. Once the threshold of the
reference frequency (or no-signa l condition) has been established, the two outputs shift in
opposite directions (higher or lower output voltage) as the input frequency shifts. The
1. Ref. Krauss, Raab, Bastian: Solid-State radio Eng.; Wiley, 1980, p.311.
VO 2Q1
1
------
2Q1
1+
1
---------------------


=
2Q1
1
------
2
---

1
1
------
Q1RC
PCS
+
1
=
11
LC
PCS
+
--------------------------------
=
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 18 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
output of the comp arator is logic outp ut. The choice of op amp or co mp ar ator depend s on
the data rate. With high IF frequency (10 MHz and above), and wide IF bandwidth (L/C
filters) data rates in excess of 4 MBd are possible.
13.7 RSSI
The Received Signal Strength Indicator (RSSI), of the SA604A demonstrates monotonic
logarithmic output over a range of 90 dB. The signal strength output is derived from the
summed stage currents in the limiting amplifiers. It is independent of the IF frequency.
Thus, unfiltered signals at the limiter inputs, spurious products, or regenerated signals
manifest themselves as RSSI outputs. An RSSI output of greater than 250 mV with no
signal (or a very small signal) applied, is an indication of possible regeneration or
oscillation.
To achieve optimum RSSI linearity, there must be a 12 dB insertion loss between the first
and second limiting amplifiers. With a typical 455 kHz ceramic filter, there is a nominal
4 dB insertion loss in the filter. An additional 6 dB is lost in the interface between the filter
and the input of the second limiter. A small amount of additional loss must be introduced
with a typical ceramic filter . In the test circuit used for cellular r adio applications (Figure 6),
the optimum linearity was achieved with a 5.1 k resistor. The resistor was placed
between the output of the fi rst limiter (pin IF_AMP_OUTPUT) and the input of the
interstage filter. With this resistor from pin IF_AMP_OUTPUT to the filter, sensitivity of
0.25 V for 12 dB SINAD was achieved. With the 3.6 k resistor, sensitivity was
optimized at 0.22 V for 12 dB SINAD with minor change in the RSSI linearity.
Any application requiring optimized RSSI linearity, such as spectrum analyzers, cellular
radio, and certain types of telemetry, requires careful attention to limiter interstage
component selection. This is especially true with high IF frequencies which require
insertion loss or impedance reduction for stability.
At low frequencies, the RSSI makes an excellent logarithmic AC voltmeter.
For data applications, the RSSI is ef fective as an Amplitude Shif t Keyed (ASK) data slicer.
If a comparator is applied to the RSSI and the threshold set slightly above the no signal
level, when an in-band signal is received the comparator is sliced. Unlike FSK
demodulation, the maximum data rate is limited. An internal capacitor limits the RSSI
frequency response to approximately 100 kHz. At high data rates, the rise and fall times
are not symmetrical.
The RSSI output is a current-to- voltage converter similar to the audio outputs. However,
an external resistor is req uired. Wi th a 91 k resistor, the output characteristic is 0.5 V for
a 10 dB change in the input amplitude.
13.8 Additional circuitry
Internal to the SA604A are voltage and current regulators which have been temperature
compensated to main tain the performance of the device over a wide temperature range.
These regulators are not accessible to the user.
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 19 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
14. Test information
Fig 14. SA604A test circuit
aaa-012851
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
SA604A
MUTE
input
RSSI
output
AUDIO
output
DATA
output
input C2
C4
F1
R2
C1
R1
R3 C6
C7
C8
R4
C11
C9 C10
C12
S1
F2
C5
C3
Q = 20 loaded
VCC
Table 8. SA604AD/01 demo board component list
Component Value Description
C1 100nF, +80%, 20 %,63 V K10000-25V ceramic
C2 100nF, +10%, 50V -
C3 100 nF, 10 %, 50 V -
C4 100nF, +10%, 50V -
C5 100 nF, 10 %, 50 V -
C6 10 pF, 2 %, 100 V NPO ceramic
C7 100 nF, 10 %, 50 V -
C8 100 nF, 10 %, 50 V -
C9 15 nF, 10 %, 50 V -
C10 150 pF 2 %, 100 V N1500 ceramic
C11 1 nF, 10 %, 100 V K2000-Y5P ceramic
C12 6.8 F20 %, 25 V tantalum
F1 455 kHz ceramic filter Murata SFG455A3
F2 455 kHz, Ce = 180 pF Toko RMC 2A6597H
R1 51 , 1 %, 1/4 W metal film
R2 1500 , 1 %, 1/4 W metal film
R3 1500 , 5 %, 1/8 W carbon composition
R4 100 k,1 %, 1/4 W metal film
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 20 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
Fig 15. Components layout
(viewed from the top) Fig 16. Bottom layout
(viewed from the top)
Fig 17. Print layout (v iewed from the top)
aaa-012852
IFINPUT
SIGNETICS
SA604A TEST CKT
MUTE
GND
GNDGND
RSSI
VCC
AUDIODATA
OFF
ON
aaa-012853
IFINPUT
SIGNETICS
SA604A TEST CKT
MUTE
GND
GNDGND
RSSI
VCC
AUDIODATA
OFF
ON
aaa-012854
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 21 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
15. Package outline
Fig 18. Package outline SOT109-1 (SO16)
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SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 22 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
Fig 19. Package outline SOT1039-2 (HXQFN16)
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1039-2 - - -- - -
sot1039-2_po
10-07-29
11-03-30
Unit
mm
max
nom
min
0.5 0.05
0.00
0.127
3.1
3.0
2.9
1.95
1.85
1.75
3.1
3.0
2.9
0.5 1.5
0.40
0.35
0.30
0.1
A
Dimensions
HXQFN16: plastic thermal enhanced extremely thin quad flat package; no leads;
16 terminals; body 3 x 3 x 0.5 mm SOT1039-2
A1b
0.35
0.30
0.25
cDD
hEE
h
1.95
1.85
1.75
ee
1e2
1.5
Lv
0.1
w
0.05
y
0.05
y1
0 1 2 mm
scale
terminal 1
index area
BA
D
E
C
y
C
y1
X
detail X
A
c
A1
b
e2
e1
e
e
1/2 e
1/2 e
AC B
v
Cw
terminal 1
index area Dh
Eh
L
5 8
16 13
4
1
9
12
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 23 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on on e printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
W ave soldering is a joining te chnology in which the joints are m ade by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
Through-hole components
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solde r lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads ha ving a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering ve rsus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
Solder bath specifications, including temperature and impurities
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 24 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
16.4 Reflow soldering
Key characteristics in reflow soldering are :
Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to
higher minimum peak temperatures (see Figure 20) than a SnPb process, thus
reducing the process window
Solder paste printing issues including smearing, release, and adjusting th e process
window for a mix of large and small components on one board
Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) an d cooling down. It is imperative that the peak
temperature is high enoug h for the solder to make reliable solder joint s (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on p ackage thickness and volume and is classified in accordance with
Table 9 and 10
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 20.
Table 9. SnPb eutectic process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350
< 2.5 235 220
2.5 220 220
Table 10. Lead-free process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350 to 2000 > 2000
< 1.6 260 260 260
1.6 to 2.5 260 250 245
> 2.5 250 245 245
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 25 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
For further informa tion on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
MSL: Moisture Sensitivity Level
Fig 20. Temperature profiles for large and small components
001aac844
temperature
time
minimum peak temperature
= minimum soldering temperature
maximum peak temperature
= MSL limit, damage level
peak
temperature
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 26 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
17. Soldering: PCB footprints
Fig 21. PCB footprint for SOT109-1 (SO16); reflow soldering
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SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 27 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
Fig 22. PCB footprint for SOT1039-2 (HXQF N16); reflow soldering
SOT1039-2Footprint information for reflow soldering of HXQFN16 package
sot1039-2_fr
occupied area
solder land
placement area
solder resist, 0.0625 around copper
solder land plus solder paste
Dimensions in mm
clearance, 0.125 around occupied area
solder paste deposit, -0.02 around copper,
stencil thickness 0.1
0.0125
0.0125
0.500
0.240
0.500
1.500
2.000
4.250
3.300 pa + oa
0.2400.500
0.500
1.5002.000
3.300
pa + oa
4.250
0.800 0.350
0.800
0.350
1.800 2.300 4.000
1.800
1.500
2.300
4.000
13-03-25
13-04-22
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 28 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
18. Abbreviations
19. Revision history
Table 11. Abbreviations
Acronym Description
AM Amplitude Modulation
ASK Amplitude Shift Keying
BPF Band-Pass Filter
FM Frequency Modulation
FSK Frequency Shift Keying
IF Intermediate Frequency
PCB Printed-Circuit Board
RF Radio Frequency
RSSI Received Signal Strength Indicator
SCA Subsidiary Commun ications Authorization
SINAD Signal-to-Noise-And-Distortion ratio
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
SA604A v.4.3 20160713 Product data sheet - SA604A v.4.2
Modifications: Table 2 “Ordering options: Changed orderable part number from SA604AD/02,118 to
SA604AD/02J.
Table 7 “Dynamic characteristics, Vo(RSSI): removed SA604AD/01 from 118 dBm and 18 dBm;
added SA604AHR to IF level = 68 dBm for 1.9 V min.
SA604A v.4.2 20160513 Product data sheet - SA604A v.4.1
Modifications: Added SA604AD/02
Table 7 “Dynamic characteristics, Vo(RSSI): added row for SA604AD/02; changed “RF” to “IF”;
updated Table note 1.
Deleted Table 8 “SA604 versus SA604A RSSI output voltage”.
SA604A v.4.1 20150330 Product dat a sheet - SA604A v.4
Modifications: Table 2, SA604AHR: Changed orderable part number from “SA604AHRX” to “SA604AHRZ”;
corrected packing method from “Q1/T1” to “Q2/T3”.
SA604A v.4 20150220 Product data sheet - SA604A v.3
SA604A v.3 20140418 Product data sheet - SA604A v.2
SA604A v.2 19971107 Product specification ECN 853-1431 18663 SA604A v.1
SA604A v.1 19941215 Product specification - -
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 29 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
20. Legal information
20.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
20.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, the
full data sheet shall pre va il.
Product specificat ion The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
20.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulat ive liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for t he customer’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo mer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semic onductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specif ication.
SA604A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 4.3 — 13 July 2016 30 of 31
NXP Semiconductors SA604A
High-performance low-power FM IF system
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omotive use. It i s neither qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a docume nt is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
20.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors SA604A
High-performance low-power FM IF system
© NXP Semiconductors N.V. 2016. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 July 2016
Document identi fier: SA604A
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
22. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4.1 Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Functional description . . . . . . . . . . . . . . . . . . . 6
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Thermal characteristics . . . . . . . . . . . . . . . . . . 7
10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 7
11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
12 Performance curves . . . . . . . . . . . . . . . . . . . . . 9
13 Application information. . . . . . . . . . . . . . . . . . 10
13.1 Circuit description. . . . . . . . . . . . . . . . . . . . . . 11
13.2 IF amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Stability considerations . . . . . . . . . . . . . . . . . 14
13.4 Quadrature detector . . . . . . . . . . . . . . . . . . . . 15
13.5 Frequency discriminator design equations. . . 16
13.6 Audio outputs . . . . . . . . . . . . . . . . . . . . . . . . . 17
13.7 RSSI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
13.8 Additional circuitry . . . . . . . . . . . . . . . . . . . . . 18
14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 19
15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21
16 Soldering of SMD packages . . . . . . . . . . . . . . 23
16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 23
16.2 Wave and reflow soldering . . . . . . . . . . . . . . . 23
16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 23
16.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 24
17 Soldering: PCB footprints. . . . . . . . . . . . . . . . 26
18 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 28
19 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 28
20 Legal information. . . . . . . . . . . . . . . . . . . . . . . 29
20.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 29
20.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
20.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 29
20.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
21 Contact information. . . . . . . . . . . . . . . . . . . . . 30
22 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31