R07DS0877EJ0200 Rev.2.00 Page 1 of 6
Sep 12, 2012
Preliminary Datasheet
H5N2507P
250V - 50A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
Low leakage current
High speed switching
Low gate charge
Built-in fast recovery diode
Outline
1. Gate
2. Drain
3. Sourc
e
4. Drain
RENESAS Package code: PRSS000
4ZE-A
(Package name:
TO-3P )
123
4D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to Source voltage VDSS 250 V
Gate to Source voltage VGSS ±30 V
Drain current ID 50 A
Drain peak current ID (pulse) Note1 200 A
Body-Drain diode reverse Drain current IDR 50 A
Avalanche current IAP Note3 35 A
Channel dissipation Pch Note2 150 W
Channel to case thermal impedance ch-c 0.833 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
R07DS0877EJ0200
(Previous: RJJ03G0646-0100)
Rev.2.00
Sep 12, 2012
H5N2507P Preliminary
R07DS0877EJ0200 Rev.2.00 Page 2 of 6
Sep 12, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to Source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Zero Gate voltage Drain current IDSS — — 10 A VDS = 250 V, VGS = 0
Gate to Source leak current IGSS — — 0.1 A VGS = ±30 V, VDS = 0
Gate to Source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA
Static Drain to Source on state
resistance
RDS(on) — 0.040 0.055 I
D = 25 A, VGS= 10 V Note4
Forward transfer admittance |yfs| 20 36 — S ID = 25 A, VDS = 10 V Note4
Input capacitance Ciss — 5000 — pF
Output capacitance Coss — 640 — pF
Reverse transfer capacitance Crss — 105 — pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time td(on) — 55 — ns
Rise time tr — 200 — ns
Turn-off delay time td(off) — 250 — ns
Fall time tf — 200 — ns
ID= 25 A
VGS = 10 V
RL = 5
Rg = 10
Total Gate charge Qg — 145 — nC
Gate to Source charge Qgs — 25 — nC
Gate to Drain charge Qgd — 65 — nC
VDD = 200 V
VGS = 10 V
ID = 50 A
Body-Drain diode forward voltage VDF — 1.0 1.5 V IF = 50 A, VGS = 0 Note4
Body-Drain diode reverse recovery
time
trr — 145 — ns
Body-Drain diode reverse recovery
charge
Qrr — 0.7 — C
IF = 50 A, VGS = 0
diF/dt = 100A/s
Note: 4. Pulse test
H5N2507P Preliminary
R07DS0877EJ0200 Rev.2.00 Page 3 of 6
Sep 12, 2012
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
1000
100
0.1
10 100 1000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
1
10
1
Tc = 25°C
1 shot
10 μs
PW = 100 μs
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Drain Current (Typical)
1
0.1
0.01
10 100 1000
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.12
0.10
0.08
0.06
0.04
0.02
–250255075 100 125150
0
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
I
D
= 50 A
V
GS
= 10 V
Pulse Test
100
80
60
40
20
0
02468
10
Ta = 25°C, Pulse Test
8 V
10 V
4.5 V
5.5 V
5 V
6 V
V
GS
= 4 V
200
160
120
80
40
0
02468
10
V
DS
= 10 V
Pulse TestTc = −25°C
25°C
75°C
246810 12
Drain to Source Saturation Voltage vs.
Gate to Source Voltage (Typical)
Drain to Source Saturation Voltage
V
DS(on)
(V)
Gate to Source Voltage V
GS
(V)
4
3
2
1
0
Ta = 25°C
Pulse Test
I
D
= 50 A
25 A
10 A
25 A
Operation in this
area is limited by
R
DS(on)
10 A
H5N2507P Preliminary
R07DS0877EJ0200 Rev.2.00 Page 4 of 6
Sep 12, 2012
04080120160
10000
1000
100
400
300
200
100
0
0
16
12
8
4
4080120160200
0
10
I
D
= 50 A
Ta = 25°C
V
DS
V
GS
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
V
DD
= 200 V
100 V
50 V
V
DD
= 200 V
100 V
50 V
100000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
00.4 0.8 1.21.6 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current IDR (A)
200
160
80
120
40
0
V
GS
= 0
Ta = 25°C
Pulse Test
5
4
3
2
1
−25050 100 1502512575
0
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
VGS(off) (V)
V
DS
= 10 V
1 mA
0.1 mA
I
D
= 10 mA
110100
1000
100
10
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
H5N2507P Preliminary
R07DS0877EJ0200 Rev.2.00 Page 5 of 6
Sep 12, 2012
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 125 V
tr
td(on)
Vin
90%90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test CircuitWaveform
3
1
0.01
0.1
100 μ10 μ1 m10 m 100 m1 10
P
DM
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 0.833°C/W, Tc = 25°C
θ γ θ
θ
D = 1
0.5
0.2
0.1
Pulse Width PW (s)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
0.02
0.05
0.01
1 shot pulse
Tc = 25°C
H5N2507P Preliminary
R07DS0877EJ0200 Rev.2.00 Page 6 of 6
Sep 12, 2012
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Previous Code
PRSS0004ZE-ATO-3P / TO-3PV
MASS[Typ.]
5.0g
Package Name
TO-3P SC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Orderable Part Number Quantity Shipping Container
H5N2507P 360 pcs Box (Tube)
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