M12L2561616A-6BIG2A - Elite Semiconductor Memory Technology, Inc.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 1/45

SDRAM 4M x 16 Bit x 4 Banks

Synchronous DRAM

FEATURES

 JEDEC standard 3.3V power supply

 LVTTL compatible with multiplexed address

 Four banks operation

 MRS cycle with address key programs

- CAS Latency ( 2 & 3 )

- Burst Length ( 1, 2, 4, 8 & full page )

- Burst Type ( Sequential & Interleave )

 All inputs are sampled at the positive going edge of

the system clock

 Burst Read single write operation

 DQM for masking

 Auto & self refresh

 64ms refresh period (8K cycle)

ORDERING INFORMATION

Product ID Max Freq. Package Comments

M12L2561616A-5TIG2A 200MHz TSOP II Pb-free

M12L2561616A-5BIG2A 200MHz BGA Pb-free

M12L2561616A-6TIG2A 166MHz TSOP II Pb-free

M12L2561616A-6BIG2A 166MHz BGA Pb-free

M12L2561616A-7TIG2A 143MHz TSOP II Pb-free

M12L2561616A-7BIG2A 143MHz BGA Pb-free

GENERAL DESCRIPTION

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a

variety of high bandwidth, high performance memory system applications.

PIN CONFIGURATION (TOP VIEW) BALL CONFIGURATION (TOP VIEW)

(TSOPII 54L, 400milX875mil Body, 0.8mm Pin Pitch) (BGA54, 8mmX8mmX1mm Body, 0.8mm Ball Pitch)

VSS DQ15

DQ14 DQ13

DQ12 DQ11

DQ10 DQ9

DQ8 NC

UDQM CLK

A12 A11

A8 A7

VSS A5

VDDQ DQ0

VSSQ DQ2

VDDQ DQ4

VDD LDQM

CAS RAS

BA0 BA1

A0 A1

A3 A2

123456789

A

B

C

D

E

F

G

H

J

VSSQ

VDDQ

VSSQ

VDDQ

VSS

CKE

A9

A6

A4

VDD

DQ1

DQ3

DQ7

WE

CS

A10

VDD

VSSQ DQ6 DQ5

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

VDD

DQ0

VDD Q

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

VDD

LD QM

WE

CAS

RAS

CS

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

54

53

52

51

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

VSS

NC

UD QM

CLK

CKE

A12

A11

A9

A8

A7

A6

A5

A4

VSS

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 2/45

BLOCK DIAGRAM

PIN DESCRIPTION

PIN NAME INPUT FUNCTION

CLK System Clock Active on the positive going edge to sample all inputs

CS Chip Select

Disables or enables device operation by masking or enabling all

inputs except CLK , CKE and L(U)DQM

CKE Clock Enable

Masks system clock to freeze operation from the next clock cycle.

CKE should be enabled at least one cycle prior new command.

Disable input buffers for power down in standby.

A0 ~ A12 Address Row / column address are multiplexed on the same pins.

Row address : RA0~RA12, column address : CA0~CA8

BA1, BA0 Bank Select Address Selects bank to be activated during row address latch time.

Selects bank for read / write during column address latch time.

RAS Row Address Strobe Latches row addresses on the positive going edge of the CLK with

RAS low. (Enables row access & precharge.)

CAS Column Address Strobe

Latches column address on the positive going edge of the CLK with

CAS low. (Enables column access.)

WE Write Enable Enables write operation and row precharge.

Latches data in starting from CAS , WE active.

L(U)DQM Data Input / Output Mask Makes data output Hi-Z, tSHZ after the clock and masks the output.

Blocks data input when L(U)DQM active.

DQ0 ~ DQ15 Data Input / Output Data inputs / outputs are multiplexed on the same pins.

V

DD / VSS Power Supply / Ground Power and ground for the input buffers and the core logic.

V

DDQ / VSSQ Data Output Power / Ground Isolated power supply and ground for the output buffers to provide

improved noise immunity.

NC No Connection This pin is recommended to be left No Connection on the device.

L(U)DQM

DQ

Mode

Register

Control Logic

Column

Address

Buffer

&

Counte

r

Row

Address

Buffer

&

Refresh

Counter

Bank D

Row Decoder

Bank A

Bank B

Bank C

Sense Amplifier

Column Decoder

Data Control Circuit

Latch Circuit

Input & Output

Buffer

Address

Clock

Generator

CLK

CKE

Command Decoder

CS

RAS

CAS

WE

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 3/45

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Voltage on any pin relative to VSS V

IN, VOUT -1.0 ~ 4.6 V

Voltage on VDD supply relative to VSS V

DD, VDDQ -1.0 ~ 4.6 V

Operating ambient temperature TA -40 ~ +85 C

Storage temperature TSTG -55 ~ +150 C

Power dissipation PD 1 W

Short circuit current IOS 50 mA

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITION

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -40 to 85 C)

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD, VDDQ 3.0 3.3 3.6 V

Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1

Input logic low voltage VIL -0.3 0 0.8 V 2

Output logic high voltage VOH 2.4 - - V IOH = -2mA

Output logic low voltage VOL - - 0.4 V IOL = 2mA

Input leakage current IIL -5 - 5 A 3

Output leakage current IOL -5 - 5 A 4

Note: 1. VIH(max) = 4.6V AC for pulse width  10ns acceptable.

2. VIL(min) = -1.5V AC for pulse width  10ns acceptable.

3. Any input 0V  V

IN



V

DD, all other pins are not under test = 0V.

4. Dout is disabled, 0V



V

OUT  V

DD.

CAPACITANCE (VDD = 3.3V, TA = 25 C, f = 1MHz)

Parameter Symbol Min Max Unit

Input capacitance (A0 ~ A12, BA0 ~ BA1) CIN1 1.5 3 pF

Input capacitance (CLK) CCLK 2 3 pF

Input capacitance

(CKE, CS , RAS , CAS , WE & L(U)DQM) CIN2 1.5 4.5 pF

Data input/output capacitance (DQ0 ~ DQ15) COUT 2 4.5 pF

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 4/45

DC CHARACTERISTICS

Recommended operating condition unless otherwise noted，TA = -40 to 85 C

Version

Parameter Symbol Test Condition

-5 -6 -7

Unit Note

Operating Current

(One Bank Active) I

CC1 Burst Length = 2, tRC = tRC(min), IOL = 0 mA 80 70 60 mA 1,2

I

CC2P CKE = VIL(max), tCC = 10ns 1 mA

Precharge Standby

Current in power-down

mode I

CC2PS CKE & CLK=VIL(max), tCC =



1 mA

I

CC2N CKE=VIH(min), CS = VIH(min), tCC = 10ns

Input signals are changed one time during 2CLK

15 mA

Precharge Standby

Current in non

power-down mode I

CC2NS CKE=VIH(min), CLK=VIL(max), tCC =



input signals are stable 5 mA

I

CC3P CKE=VIL(max), tCC =10ns 6 mA

Active Standby

Current in power-down

mode I

CC3PS CKE & CLK=VIL(max), tCC =



6 mA

I

CC3N

CKE  V

IH(min), CS  V

IH(min), tCC = 15ns

Input signals are changed one time during 2 CLKs

All other pins  V

DD-0.2V or ≤ 0.2V

28 mA

Active Standby

Current in non

power-down mode

(One Bank Active)

I

CC3NS CKE=VIH(min), CLK=VIL(max), tCC =



input signals are stable 20 mA

Operating Current

(Burst Mode) I

CC4 IOL = 0 mA, Page Burst, 4 Banks activated,

tCCD = 2 CLKs 90 80 70 mA 1,2

Refresh Current ICC5 tRFC tRFC(min) 120 110 100 mA

Self Refresh Current ICC6 CKE=0.2V 3 mA

Note: 1. Measured with outputs open.

2. Input signals are changed one time during 2 CLKs.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 5/45

AC OPERATING TEST CONDITIONS (VDD = 3.3V



0.3V ，TA = -40 to 85 C)

Parameter Value Unit

Input levels (Vih/Vil) 2.4/0.4 V

Input timing measurement reference level 1.4 V

Input rise and fall-time tr/tf = 1/1 ns

Output timing measurement reference level 1.4 V

Output load condition See Fig. 2

(Fig. 1) DC Output Load Circuit (Fig. 2) AC Output Load Circuit

OPERATING AC PARAMETER

(AC operating conditions unless otherwise noted)

Version

Parameter Symbol

-5 -6 -7

Unit Note

Row active to row active delay tRRD(min) 10 12 14 ns 1

RAS to CAS delay tRCD(min) 15 18 20

ns 1

Row precharge time tRP(min) 15 18 20 ns 1

tRAS(min) 40 42 45 ns 1

Row active time

tRAS(max) 100 us

@ Operating tRC(min) 55 60 63 ns 1

Row cycle time

@ Auto refresh tRFC(min) 55 60 63 ns 1,5

Last data in to col. address delay tCDL(min) 1 CLK 2

Last data in to row precharge tRDL(min) 2 CLK 2

Last data in to burst stop tBDL(min) 1 CLK 2

Col. address to col. address delay tCCD(min) 1 CLK 3

Refresh period (8,192 rows) tREF(max) 64 ms 6

CAS latency = 3 2

Number of valid

Output data CAS latency = 2 1

ea 4

Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then

rounding off to the next higher integer.

2. Minimum delay is required to complete write.

3. All parts allow every cycle column address change.

4. In case of row precharge interrupt, auto precharge and read burst stop.

5. A new command may be given tRFC after self refresh exit.

6. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posted to any given SDRAM, and the

maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is

8x7.8 μs.)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 6/45

AC CHARACTERISTICS (AC operating condition unless otherwise noted)

-5 -6 -7

Parameter Symbol

Min Max Min Max Min Max

Unit Note

CAS latency = 3 5 6 7

CLK cycle time CAS latency = 2 tCC 10 1000 10 1000 10 1000 ns 1

CAS latency = 3 5 5.4 5.4 CLK to valid

output delay CAS latency = 2 tSAC 5.4 5.4 5.4

ns 1,2

CAS latency = 3 2 2.5 2.5 Output data

hold time CAS latency = 2 tOH 2 2.5 2.5 ns 2

CLK high pulse width tCH 2 2.5 2.5 ns 3

CLK low pulse width tCL 2 2.5 2.5 ns 3

Input setup time tSS 1.5 1.5 1.5 ns 3

Input hold time tSH 0.8 0.8 0.8 ns 3

CLK to output in Low-Z tSLZ 1 1 1 ns 2

CAS latency = 3 4.5 5.4 5.4

CLK to output

in Hi-Z CAS latency = 2 tSHZ 5.4 5.4 5.4

ns

Note: 1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.

3. Assumed input rise and fall time (tr & tf) =1ns.

If tr & tf is longer than 1ns. transient time compensation should be considered.

i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 7/45

SIMPLIFIED TRUTH TABLE

COMMAND CKEn-1 CKEn CS RAS CAS WE DQM BA0,

BA1 A10/AP A12~A11,

A9~A0 Note

Register Mode Register set H X L L L L X OP CODE 1,2

Auto Refresh H 3

Entry H L L L L H X X 3

L H H H X 3

Refresh Self

Refresh Exit L H H X X X X X 3

Bank Active & Row Addr. H X L L H H X V Row Address

Auto Precharge Disable L 4

Read &

Column Address Auto Precharge Enable

H X L H L H X V

H

Column

Address

(A0~A8) 4,5

Auto Precharge Disable L 4

Write &

Column Address Auto Precharge Enable

H X L H L L X V

H

Column

Address

(A0~A8) 4,5

Burst Stop H X L H H L X X 6

Bank Selection V L

Precharge

All Banks

H X L L H L X

X H

X

H X X X

Entry H L

L V V V

X

Clock Suspend or

Active Power Down

Exit L H X X X X X

X

H X X X

Entry H L

L H H H

X

H X X X

Precharge Power Down Mode

Exit L H

L V V V

X

DQM H X V X 7

H X X X

No Operating Command H X

L H H H

X X

(V = Valid, X = Don’t Care. H = Logic High, L = Logic Low)

Note: 1.OP Code: Operating Code

A0~A12 & BA0~BA1: Program keys. (@ MRS)

2.MRS can be issued only at all banks precharge state.

A new command can be issued after 2 CLK cycles of MRS.

3.Auto refresh functions are as same as CBR refresh of DRAM.

The automatical precharge without row precharge of command is meant by “Auto”.

Auto/self refresh can be issued only at all banks idle state.

4.BA0~BA1: Bank select addresses.

If BA0 and BA1 are “Low” at read, write, row active and precharge, bank A is selected.

If BA0 is “Low” and BA1 is “High” at read, write, row active and precharge, bank B is selected.

If BA0 is “High” and BA1 is “Low” at read, write, row active and precharge, bank C is selected.

If BA0 and BA1 are “High” at read, write, row active and precharge, bank D is selected

If A10/AP is “High” at row precharge, BA0 and BA1 is ignored and all banks are selected.

5.During burst read or write with auto precharge, new read/write command can not be issued.

Another bank read/write command can be issued after the end of burst.

New row active of the associated bank can be issued at tRP after the end of burst.

6.Burst stop command is valid at every burst length.

7.DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (write DQM latency is 0), but makes

Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 8/45

MODE REGISTER FIELD TABLE TO PROGRAM MODES

Register Programmed with MRS

Address BA0~BA1 A12~A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

Function RFU RFU W.B.L. TM CAS Latency BT Burst Length

Test Mode CAS Latency Burst Type Burst Length

A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1

0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1

0 1 Reserved 0 0 1 Reserved 1 Interleave 0 0 1 2 2

1 0 Reserved 0 1 0 2 0 1 0 4 4

1 1 Reserved 0 1 1 3

0 1 1 8 8

Write Burst Length 1 0 0 Reserved 1 0 0 Reserved Reserved

A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved

0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved

1 Single Bit 1 1 1 Reserved

1 1 1 Full Page Reserved

Full Page Length: 512

Note: 1. RFU (Reserved for future use) should stay “0” during MRS cycle.

2. If A9 is high during MRS cycle, “Burst Read single write” function will be enabled.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 9/45

BURST SEQUENCE (BURST LENGTH = 4)

Initial Address

A1 A0

Sequential Interleave

0 0 0 1 2 3 0 1 2 3

0 1 1 2 3 0 1 0 3 2

1 0 2 3 0 1 2 3 0 1

1 1 3 0 1 2 3 2 1 0

BURST SEQUENCE (BURST LENGTH = 8)

Initial Address

A2 A1 A0

Sequential Interleave

0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7

0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6

0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5

0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4

1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3

1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2

1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1

1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 10/45

DEVICE OPERATIONS

CLOCK (CLK)

The clock input is used as the reference for all SDRAM

operations. All operations are synchronized to the positive

going edge of the clock. The clock transitions must be

monotonic between VIL and VIH. During operation with CKE

high all inputs are assumed to be in valid state (low or high) for

the duration of setup and hold time around positive edge of the

clock for proper functionality and ICC specifications.

CLOCK ENABLE(CKE)

The clock enable (CKE) gates the clock onto SDRAM. If CKE

goes low synchronously with clock (set-up and hold time same

as other inputs), the internal clock suspended from the next

clock cycle and the state of output and burst address is frozen

as long as the CKE remains low. All other inputs are ignored

from the next clock cycle after CKE goes low. When all banks

are in the idle state and CKE goes low synchronously with

clock, the SDRAM enters the power down mode from the next

clock cycle. The SDRAM remains in the power down mode

ignoring the other inputs as long as CKE remains low. The

power down exit is synchronous as the internal clock is

suspended. When CKE goes high at least “1CLK + tSS” before

the high going edge of the clock, then the SDRAM becomes

active from the same clock edge accepting all the input

commands.

BANK ADDRESSES (BA0~BA1)

This SDRAM is organized as four independent banks of

4,194,304 words x 16 bits memory arrays. The BA0~BA1

inputs are latched at the time of assertion of RAS and CAS

to select the bank to be used for the operation. The banks

addressed BA0~BA1 are latched at bank active, read, write,

mode register set and precharge operations.

ADDRESS INPUTS (A0~A12)

The 22 address bits are required to decode the 4,194,304

word locations are multiplexed into 13 address input pins

(A0~A12). The 13 row addresses are latched along with RAS

and BA0~BA1 during bank active command. The 9 bit column

addresses are latched along with CAS , WE and BA0~BA1

during read or with command.

NOP and DEVICE DESELECT

When RAS , CAS and WE are high , The SDRAM

performs no operation (NOP). NOP does not initiate any new

operation, but is needed to complete operations which require

more than single clock cycle like bank activate, burst read,

auto refresh, etc. The device deselect is also a NOP and is

entered by asserting CS high. CS high disables the

command decoder so that RAS , CAS , WE and all the

address inputs are ignored.

POWER-UP

1.Apply power and start clock, Attempt to maintain CKE =

“H”, DQM = “H” and the other pins are NOP condition at

the inputs.

2.Maintain stable power, stable clock and NOP input

condition for minimum of 200us.

3.Issue precharge commands for all banks of the devices.

4.Issue 2 or more auto-refresh commands.

5.Issue a mode register set command to initialize the

mode register.

cf.) Sequence of 4 & 5 is regardless of the order.

The device is now ready for normal operation.

MODE REGISTER SET (MRS)

The mode register stores the data for controlling the

various operating modes of SDRAM. It programs the CAS

latency, burst type, burst length, test mode and various

vendor specific options to make SDRAM useful for variety

of different applications. The default value of the mode

register is not defined, therefore the mode register must

be written after power up to operate the SDRAM. The

mode register is written by asserting low on CS , RAS ,

CAS and WE (The SDRAM should be in active mode

with CKE already high prior to writing the mode register).

The state of address pins A0~A12 and BA0~BA1 in the

same cycle as CS , RAS , CAS and WE going low is

the data written in the mode register. Two clock cycles is

required to complete the write in the mode register. The

mode register contents can be changed using the same

command and clock cycle requirements during operation

as long as all banks are in the idle state. The mode

register is divided into various fields into depending on

functionality. The burst length field uses A0~A2, burst type

uses A3, CAS latency (read latency from column address)

use A4~A6, vendor specific options or test mode use

A7~A8, A10/AP~A12 and BA0~BA1. The write burst

length is programmed using A9. A7~A8, A10/AP~A12 and

BA0~BA1 must be set to low for normal SDRAM

operation. Refer to the table for specific codes for various

burst length, burst type and CAS latencies.

BANK ACTIVATE

The bank activate command is used to select a random

row in an idle bank. By asserting low on RAS and CS

with desired row and bank address, a row access is

initiated. The read or write operation can occur after a

time delay of tRCD(min) from the time of bank activation.

tRCD is the internal timing parameter of SDRAM, therefore

it is dependent on operating clock frequency. The

minimum number of clock cycles required between bank

activate and read or write command should be calculated

by dividing tRCD(min) with cycle time of the clock and then

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 11/45

DEVICE OPERATIONS (Continued)

rounding of the result to the next higher integer. The SDRAM

has four internal banks in the same chip and shares part of the

internal circuitry to reduce chip area, therefore it restricts the

activation of four banks simultaneously. Also the noise

generated during sensing of each bank of SDRAM is high

requiring some time for power supplies to recover before

another bank can be sensed reliably. tRRD(min) specifies the

minimum time required between activating different bank. The

number of clock cycles required between different bank

activation must be calculated similar to tRCD specification. The

minimum time required for the bank to be active to initiate

sensing and restoring the complete row of dynamic cells is

determined by tRAS(min). Every SDRAM bank activate

command must satisfy tRAS(min) specification before a

precharge command to that active bank can be asserted. The

maximum time any bank can be in the active state is

determined by tRAS(max) and tRAS(max) can be calculated

similar to tRCD specification.

BURST READ

The burst read command is used to access burst of data on

consecutive clock cycles from an active row in an active bank.

The burst read command is issued by asserting low on CS

and RAS with WE being high on the positive edge of the

clock. The bank must be active for at least tRCD(min) before the

burst read command is issued. The first output appears in CAS

latency number of clock cycles after the issue of burst read

command. The burst length, burst sequence and latency from

the burst read command is determined by the mode register

which is already programmed. The burst read can be initiated

on any column address of the active row. The address wraps

around if the initial address does not start from a boundary

such that number of outputs from each I/O are equal to the

burst length programmed in the mode register. The output

goes into high-impedance at the end of burst, unless a new

burst read was initiated to keep the data output gapless. The

burst read can be terminated by issuing another burst read or

burst write in the same bank or the other active bank or a

precharge command to the same bank. The burst stop

command is valid at every page burst length.

BURST WRITE

The burst write command is similar to burst read command

and is used to write data into the SDRAM on consecutive clock

cycles in adjacent addresses depending on burst length and

burst sequence. By asserting low on CS , CAS and WE

with valid column address, a write burst is initiated. The data

inputs are provided for the initial address in the same clock

cycle as the burst write command. The input buffer is

deselected at the end of the burst length, even though the

internal writing can be completed yet. The writing can be

complete by issuing a burst read and DQM for blocking data

inputs or burst write in the same or another active bank. The

burst stop command is valid at every burst length. The write

burst can also be terminated by using DQM for blocking data

and precharge the bank tRDL after the last data input to be

written into the active row. See DQM OPERATION also.

DQM OPERATION

The DQM is used mask input and output operations. It

works similar to OE during operation and inhibits writing

during write operation. The read latency is two cycles from

DQM and zero cycle for write, which means DQM masking

occurs two cycles later in read cycle and occurs in the

same cycle during write cycle. DQM operation is

synchronous with the clock. The DQM signal is important

during burst interrupts of write with read or precharge in

the SDRAM. Due to asynchronous nature of the internal

write, the DQM operation is critical to avoid unwanted or

incomplete writes when the complete burst write is

required. Please refer to DQM timing diagram also.

PRECHARGE

The precharge is performed on an active bank by

asserting low on clock cycles required between bank

activate and clock cycles required between bank activate

and CS , RAS , WE and A10/AP with valid BA0~BA1

of the bank to be procharged. The precharge command

can be asserted anytime after tRAS(min) is satisfy from the

bank active command in the desired bank. tRP is defined

as the minimum number of clock cycles required to

complete row precharge is calculated by dividing tRP with

clock cycle time and rounding up to the next higher

integer. Care should be taken to make sure that burst

write is completed or DQM is used to inhibit writing before

precharge command is asserted. The maximum time any

bank can be active is specified by tRAS(max). Therefore,

each bank has to be precharge with tRAS(max) from the

bank activate command. At the end of precharge, the

bank enters the idle state and is ready to be activated

again. Entry to power-down, Auto refresh, Self refresh and

Mode register set etc. is possible only when all banks are

in idle state.

AUTO PRECHARGE

The precharge operation can also be performed by using

auto precharge. The SDRAM internally generates the

timing to satisfy tRAS(min) and “tRP” for the programmed

burst length and CAS latency. The auto precharge

command is issued at the same time as burst write by

asserting high on A10/AP, the bank is precharge command

is asserted. Once auto precharge command is given, no

new commands are possible to that particular bank until

the bank achieves idle state.

FOUR BANKS PRECHARGE

Four banks can be precharged at the same time by using

Precharge all command. Asserting low on CS , RAS ,

and WE with high on A10/AP after all banks have

satisfied tRAS(min) requirement, performs precharge on all

banks. At the end of tRP after performing precharge all, all

banks are in idle state.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 12/45

DEVICE OPERATIONS (Continued)

AUTO REFRESH

The storage cells of SDRAM need to be refreshed every 64ms

to maintain data. An auto refresh cycle accomplishes refresh of

a single row of storage cells. The internal counter increments

automatically on every auto refresh cycle to refresh all the

rows. An auto refresh command is issued by asserting low on

CS , RAS and CAS with high on CKE and WE . The auto

refresh command can only be asserted with all banks being in

idle state and the device is not in power down mode (CKE is

high in the previous cycle). The time required to complete the

auto refresh operation is specified by tRFC(min). The minimum

number of clock cycles required can be calculated by driving

tRFC with clock cycle time and them rounding up to the next

higher integer. The auto refresh command must be followed by

NOP’s until the auto refresh operation is completed. The auto

refresh is the preferred refresh mode when the SDRAM is

being used for normal data transactions. The auto refresh

cycle can be performed once in 7.8us.

SELF REFRESH

The self refresh is another refresh mode available in the

SDRAM. The self refresh is the preferred refresh mode for

data retention and low power operation of SDRAM. In self

refresh mode, the SDRAM disables the internal clock and

all the input buffers except CKE. The refresh addressing

and timing is internally generated to reduce power

consumption.

The self refresh mode is entered from all banks idle state

by asserting low on CS , RAS , CAS and CKE with

high on WE . Once the self refresh mode is entered, only

CKE state being low matters, all the other inputs including

clock are ignored to remain in the refresh.

The self refresh is exited by restarting the external clock

and then asserting high on CKE. This must be followed by

NOP’s for a minimum time of tRFC before the SDRAM

reaches idle state to begin normal operation. 8K cycles of

burst auto refresh is required immediately before self

refresh entry and immediately after self refresh exit.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 13/45

COMMANDS

Mode register set command

(CS , RAS , CAS , WE = Low)

The M12L2561616A has a mode register that defines how the device operates.

In this command, A0~A12, BA0 and BA1 are the data input pins. After power on, the

mode register set command must be executed to initialize the device.

The mode register can be set only when all banks are in idle state.

During 2CLK following this command, the M12L2561616A cannot accept any

other commands.

Activate command

(CS , RAS = Low, CAS , WE = High)

The M12L2561616A has four banks, each with 8,192 rows.

This command activates the bank selected by BA1 and BA0 (BS) and a row

address selected by A0 through A12.

This command corresponds to a conventional DRAM’s RAS falling.

Precharge command

(CS , RAS , WE = Low, CAS = High )

This command begins precharge operation of the bank selected by BA1 and BA0

(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.

When A10 is Low, only the bank selected by BA1 and BA0 is precharged.

After this command, the M12L2561616A can’t accept the activate command to

the precharging bank during tRP (precharge to activate command period).

This command corresponds to a conventional DRAM’s RAS rising.

CLK

CKE

CS

RAS

WE

BA0, BA1

(Bank select)

A10

Add

CAS

H

Row

Fig. 1 Mode register set

command

Fig. 2 Row address strobe and

bank active command

CLK

CKE

CS

RAS

WE

BA0, BA1

(Bank select)

A10

(Precharge select)

Add

CAS

H

Fig. 3 Precharge command

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 14/45

Write command

(

CS , CAS , WE = Low, RAS = High)

If the mode register is in the burst write mode, this command sets the burst start

address given by the column address to begin the burst write operation. The first

write data in burst can be input with this command with subsequent data on following

clocks.

Read command

(CS , CAS = Low, RAS , WE = High)

Read data is available after CAS latency requirements have been met.

This command sets the burst start address given by the column address.

CBR (auto) refresh command

(

CS , RAS , CAS = Low, WE , CKE = High)

This command is a request to begin the CBR refresh operation. The refresh

address is generated internally.

Before executing CBR refresh, all banks must be precharged.

After this cycle, all banks will be in the idle (precharged) state and ready for a

row activate command.

During tRFC period (from refresh command to refresh or activate command), the

M12L2561616A cannot accept any other command.

CLK

CKE

CS

RAS

WE

BA0,BA1

(Bank select)

BA0,BA1

(Bank select)

A10

Add

CAS

H

Col.

Fig. 4 Column address and

write command

Fig. 5 Column address and

read command

CLK

CKE

CS

RAS

WE

BA0,BA1

(Bank select)

A10

Add

CAS

H

Fig. 6 Auto refresh command

Col.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 15/45

Self refresh entry command

(

CS , RAS , CAS , CKE = Low , WE = High)

After the command execution, self refresh operation continues while CKE

remains low. When CKE goes to high, the M12L2561616A exits the self refresh

mode.

During self refresh mode, refresh interval and refresh operation are performed

internally, so there is no need for external control.

Before executing self refresh, all banks must be precharged.

Burst stop command

(CS , WE = Low, RAS , CAS = High)

This command terminates the current burst operation.

Burst stop is valid at every burst length.

No operation

(

CS = Low, RAS , CAS , WE = High)

This command is not an execution command. No operations begin or terminate

by this command.

CLK

CKE

CS

RAS

WE

BA0, BA1

(Bank select)

A10

Add

CAS

CLK

CKE

CS

RAS

WE

BA0, BA1

(Bank select)

A10

Add

CAS

H

Fig. 7 Self refresh entry

command

Fig. 8 Burst stop command

CLK

CKE

CS

RAS

WE

BA0, BA1

(Bank select)

A10

Add

CAS

H

Fig. 9 No operation

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 16/45

BASIC FEATURE AND FUNCTION DESCRIPTIONS

1. CLOCK Suspend

2. DQM Operation

*Note: 1. CKE to CLK disable/enable = 1CLK.

2. DQM masks data out Hi-Z after 2CLKs which should masked by CKE ”L”.

3. DQM masks both data-in and data-out.

CLK

CMD

DQM

DQ(CL2)

DQ(CL3)

RD

Q0 Q2 Q3

Q1 Q2 Q3D0 D1 D3

D1 D3

D0

WR

Masked b y DQ M

Masked by DQM

CLK

CMD

DQM

DQ(CL2)

DQ(CL3)

CKE

RD

Q0 Q2 Q4

Hi-Z Hi-Z Hi-Z Q6 Q7 Q8

Q5 Q6 Q7

Q1 Q3

Hi-Z Hi-Z Hi-Z

Hi-Z

1)Write Mask (BL=4) 2)Read Mask (BL=4)

DQM to Data-in Mask=0 DQM to Data-out Mask=2

3)DQM with clcok suspended (Full Page Read)

*Note2

Internal

CLK

CMD

CKE

Internal

CLK

DQ(CL2)

DQ(CL3)

RD

Q2

Q0 Q1 Q3

Q2 Q0

Q1 Q3

D0 D1 D2 D3

D1 D2 D3

D0

WR

Masked by CKE

1) Clock Suspended During Write (BL=4) 2) Clock Suspended During Read (BL=4)

Not Written Suspended Dout

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 17/45

3. CAS Interrupt (I)

CLK

CMD

ADD

DQ(CL2)

DQ(CL3)

RD

QB0 QB2QA0

CLK

CMD

ADD

DQ

WR

DA0 DB0 DB1

RD

AB

QB1 QB3

QB0 QB2

QA0 QB3QB1

tCCD

*Not e 2

WR

tCC D * No te 2

AB

tCDL

*Note 3

WR RD

tCCD *Note 2

A B

DA0 DB0 DB1

tCDL

*Note 3

DA0 DB0 DB1

DQ(CL3)

DQ (C L2 )

1)Read interrupted by Read (BL=4)

2) Wr i te in ter ru pte d b y W ri te (B L= 2) 3 )W ri te in ter rup ted by Read (B L=2 )

*No

t

e1

*Note: 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.

By ” CAS interrupt ”, to stop burst read/write by CAS access ; read and write.

2. tCCD:CAS to CAS delay. (=1CLK)

3. tCDL: Last data in to new column address delay. (=1CLK)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 18/45

4. CAS Interrupt (II): Read Interrupted by Write & DQM

CLK

i)CMD

DQM

DQ D1 D3

D0 D2

WR

ii)CMD

DQM

DQ

iii)CMD

DQM

DQ

iv)CMD

DQM

DQ

D1 D3

D0 D2

RD WR

D1 D3D0 D2

RD WR

Hi-Z

Q0

*Note1

Hi-Z

(a)CL=2,BL=4

RD

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 19/45

*Note: 1. To prevent bus contention, there should be at least one gap between data in and data out.

5. Write Interrupted by Precharge & DQM

CLK

CMD

DQM

DQ D0 D1

WR

*Note3

*Note2

Masked by DQM

D3

PRE

t

RDL(min)

*Note: 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.

2. To inhibit invalid write, DQM should be issued.

3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt

but only another bank precharge of four banks operation.

CLK

i)CMD

ii)CMD

iii)CMD

iv)CMD

DQM

DQ

D1 D3

D1

D0 D2

D3

D0 D2

WR

(b)CL=3,BL=4

RD WR

D1 D3

D0 D2

D1 D3

D0 D2

RD WR

Hi-Z

D1 D3

D0 D2

Q0

*Note1

v)CMD

DQM

DQ

RD WR

Hi-Z

RD

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 20/45

6. Precharge

.

7. Auto Precharge

*Note: 1. tRDL: Last data in to row precharge delay.

2. Number of valid output data after row precharge: 1, 2 for CAS Latency = 2, 3 respectively.

3. The row active command of the precharge bank can be issued after tRP from this point.

The new read/write command of other activated bank can be issued from this point.

At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.

CLK

CMD

DQ D0 D1 D2 D3

WR

tRDL

*Note1

CLK

CMD

DQ(CL2) Q0 Q1 Q2 Q3

RD PRE

DQ(CL3) Q0 Q1 Q2 Q3

PRE

1)No

r

mal W

r

ite (BL=4) 2)Normal Read (BL=4)

CL=2

PRE CL=3

*Note2

CLK

CMD

DQ D0 D1 D2 D3

WR

CLK

CMD

DQ(CL2) D0 D1 D2 D3

RD

DQ(CL3)

*Note3

Auto Precharge starts

D0 D1 D2 D3

*Note3

Auto Precharge starts

1

)

No

r

mal W

r

ite

(

BL=4

)

2

)

No

r

mal Read

(

BL=4

)

tRDL (min)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 21/45

8. Burst Stop & Interrupted by Precharge

CLK

CMD

DQ(CL2)

DQ(CL3)

CLK

CMD

DQM

DQ

Q0 Q1

RD STOP

*Note2

1)W

r

ite B

u

r

st St

o

p(B

L

=

8

)

2)Read Burst Stop (BL=4)

CLK

CMD

DQ(CL2)

CLK

CMD

DQM

DQ D0 D1 Mask Mask

WR

1)W

r

ite i

n

te

r

u

pte

d

b

y

p

r

ec

h

a

r

g

e(B

L

=

4

)

2)Read interrupted by precharge (BL=4)

*Note2

PRE

*Note4

*Note3

DQ(CL3)

*Note5

t

RDL

Q2

Q3

Q0 Q1

RD PRE

Q1 Q2

Q0

D0 D1 D2 D3

WR STOP

*Note1

t

BDL

D4 D5

Q3

9. MRS

*Note: 1. tBDL: 1 CLK; Last data in to burst stop delay.

Read or write burst stop command is valid at every burst length.

2. Number of valid output data after burst stop: 1, 2 for CAS latency = 2, 3 respectiviely.

3. Write burst is terminated. tBDL determinates the last data write.

4. DQM asserted to prevent corruption of locations D2 and D3.

5. Precharge can be issued here or earlier (satisfying tRAS min delay) with DQM.

6. PRE: All banks precharge, if necessary.

MRS can be issued only at all banks precharge state.

CLK

CMD PRE

*Note4

MRS ACT

tRP 2CLK

1)Mode Register Set

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 22/45

10. Clock Suspend Exit & Power Down Exit

11. Auto Refresh & Self Refresh

*Note: 1. Active power down: one or more banks active state.

2. Precharge power down: all banks precharge state.

3. The auto refresh is the same as CBR refresh of conventional DRAM.

No precharge commands are required after auto refresh command.

During tRFC from auto refresh command, any other command can not be accepted.

4. Before executing auto/self refresh command, all banks must be idle state.

5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.

6. During self refresh entry, refresh interval and refresh operation are performed internally.

After self refresh entry, self refresh mode is kept while CKE is low.

During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.

For the time interval of tRFC from self refresh exit command, any other command can not be accepted.

8K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh exit.

CLK

CKE

Internal

CLK

CMD RD

tSS

*Note1

CLK

CKE

Internal

CLK

CMD ACT

tSS

*Note2

NOP

1)Clock Su spend(=

A

ctive Powe

r

Down)Exit 2)Powe

r

Down (=P

r

echa

r

ge Powe

r

Down)

CLK

CMD PRE AR

CKE

CMD

t

RP

t

RFC

*Note5

*Note4

CLK

CMD PRE SR

CKE

CMD

t

RP

t

RFC

*Note4

1)Auto Refresh & Self Refresh

2)Self Refresh

*No

t

e3

*Note6

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 23/45

12. About Burst Type Control

Sequential Counting

At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8)

BL = 1, 2, 4, 8 and full page.

Basic

MODE

Interleave Counting At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8)

BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting

Random

MODE

Random Column Access

tCCD = 1 CLK

Every cycle Read/Write Command with random column address can realize Random

Column Access.

That is similar to Extended Data Out (EDO) Operation of conventional DRAM.

13. About Burst Length Control

1 At MRS A210 = “000”

At auto precharge. tRAS should not be violated.

2 At MRS A210 = “001”

At auto precharge. tRAS should not be violated.

4 At MRS A210 = “010”

8 At MRS A210 = “011”

Basic

MODE

Full Page At MRS A210 = “111”

At the end of the burst length, burst is warp-around.

Special

MODE BRSW

At MRS A9 = “1”

Read burst = 1,2,4,8, full page write burst =1

At auto precharge of write, tRAS should not be violated.

Random

MODE Burst Stop t

BDL = 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.

Using burst stop command, any burst length control is possible.

RAS Interrupt

(Interrupted by

Precharge)

Before the end of burst. Row precharge command of the same bank stops read /write burst

with auto precharge.

t

RDL = 1 with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.

During read/write burst with auto precharge, RAS interrupt can not be issued.

Interrupt

MODE

CAS Interrupt

Before the end of burst, new read/write stops read/write burst and starts new read/write

burst.

During read/write burst with auto precharge, CAS interrupt can not be issued.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 24/45

FUNCTION TRUTH TABLE (TABLE 1)

Current

State CS RAS CAS WE BA ADDR ACTION Note

H X X X X X NOP

L H H H X X NOP

L H H L X X ILLEGAL 2

IDLE L H L X BA CA, A10/AP ILLEGAL 2

L L H H BA RA Row (&Bank) Active ; Latch RA

L L H L BA A10/AP NOP 4

L L L H X X Auto Refresh or Self Refresh 5

L L L L OP code OP code Mode Register Access 5

H X X X X X NOP

L H H H X X NOP

L H H L X X ILLEGAL 2

Row L H L H BA CA, A10/AP Begin Read ; latch CA ; determine AP

Active L H L L BA CA, A10/AP Begin Write ; latch CA ; determine AP

L L H H BA RA ILLEGAL 2

L L H L BA A10/AP Precharge

L L L X X X ILLEGAL

H X X X X X NOP (Continue Burst to End  Row Active)

L H H H X X NOP (Continue Burst to End  Row Active)

L H H L X X Term burst  Row active

Read L H L H BA CA, A10/AP Term burst, New Read, Determine AP

L H L L BA CA, A10/AP Term burst, New Write, Determine AP 3

L L H H BA RA ILLEGAL 2

L L H L BA A10/AP Term burst, Precharge timing for Reads

L L L X X X ILLEGAL

H X X X X X NOP (Continue Burst to End  Row Active)

L H H H X X NOP (Continue Burst to End  Row Active)

L H H L X X Term burst  Row active

Write L H L H BA CA, A10/AP Term burst, New Read, Determine AP 3

L H L L BA CA, A10/AP Term burst, New Write, Determine AP 3

L L H H BA RA ILLEGAL 2

L L H L BA A10/AP Term burst, Precharge timing for Writes 3

L L L X X X ILLEGAL

H X X X X X NOP (Continue Burst to End  Row Active)

Read with L H H H X X NOP (Continue Burst to End  Row Active)

Auto L H H L X X ILLEGAL

Precharge L H L X BA CA, A10/AP ILLEGAL

L L H X BA RA, RA10 ILLEGAL 2

L L L X X X ILLEGAL

H X X X X X NOP (Continue Burst to End  Row Active)

Write with L H H H X X NOP (Continue Burst to End  Row Active)

Auto L H H L X X ILLEGAL

Precharge L H L X BA CA, A10/AP ILLEGAL

L L H X BA RA, RA10 ILLEGAL 2

L L L X X X ILLEGAL

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 25/45

Current

State CS RAS CAS WE BA ADDR ACTION Note

H X X X X X NOP  Idle after tRP

Read with L H H H X X NOP  Idle after tRP

Auto L H H L X X ILLEGAL 2

Precharge L H L X BA CA ILLEGAL 2

L L H H BA RA ILLEGAL 2

L L H L BA A10/AP NOP  Idle after tRP 4

L L L X X X ILLEGAL

H X X X X X NOP  Row Active after tRCD

L H H H X X NOP  Row Active after tRCD

Row L H H L X X ILLEGAL 2

Activating L H L X BA CA ILLEGAL 2

L L H H BA RA ILLEGAL 2

L L H L BA A10/AP ILLEGAL 2

L L L X X X ILLEGAL

H X X X X X NOP  Idle after tRFC

L H H X X X NOP  Idle after tRFC

Refreshing L H L X X X ILLEGAL

L L H X X X ILLEGAL

L L L X X X ILLEGAL

H X X X X X NOP  Idle after 2clocks

Mode L H H H X X NOP  Idle after 2clocks

Register L H H L X X ILLEGAL

Accessing L H L X X X ILLEGAL

L L X X X X ILLEGAL

Abbreviations: RA = Row Address BA = Bank Address

NOP = No Operation Command CA = Column Address AP = Auto Precharge

*Note: 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.

2. Illegal to bank in specified state; Function may be legal in the bank indicated by BA, depending on the state of the bank.

3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.

4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP).

5. Illegal if any bank is not idle.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 26/45

FUNCTION TRUTH TABLE (TABLE2)

Current

State

CKE

( n-1 )

CKE

n CS RAS CAS WE ADDR ACTION Note

H X X X X X X INVALID

L H H X X X X Exit Self Refresh  Idle after tRFC (ABI) 6

Self L H L H H H X Exit Self Refresh  Idle after tRFC (ABI) 6

Refresh L H L H H L X ILLEGAL

L H L H L X X ILLEGAL

L H L L X X X ILLEGAL

L L X X X X X NOP (Maintain Self Refresh)

H X X X X X X INVALID

All L H H X X X X Exit Self Refresh  ABI 7

Banks L H L H H H X Exit Self Refresh  ABI 7

Precharge L H L H H L X ILLEGAL

Power L H L H L X X ILLEGAL

Down L H L L X X X ILLEGAL

L L X X X X X NOP (Maintain Low Power Mode)

H H X X X X X Refer to Table1

H L H X X X X Enter Power Down 8

H L L H H H X Enter Power Down 8

H L L H H L X ILLEGAL

All H L L H L X X ILLEGAL

Banks H L L L H H RA Row (& Bank) Active

Idle H L L L H H X NOP

H L L L L H X Enter Self Refresh 8

H L L L L L OP Code Mode Register Access

L L X X X X X NOP

Any State H H X X X X X Refer to Operations in Table 1

other than H L X X X X X Begin Clock Suspend next cycle 9

Listed L H X X X X X Exit Clock Suspend next cycle 9

above L L X X X X X Maintain Clock Suspend

Abbreviations: ABI = All Banks Idle, RA = Row Address

*Note: 6.CKE low to high transition is asynchronous.

7.CKE low to high transition is asynchronous if restart internal clock.

A minimum setup time 1CLK + tSS must be satisfy before any command other than exit.

8.Power down and self refresh can be entered only from the all banks idle state.

9.Must be a legal command.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 27/45

Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3, Burst Length = 1

:Don't Care

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLOCK

CKE

CS

RAS

CAS

ADDR

WE

DQ

DQM

A10/AP

BA0,BA1

t

CH

t

CL

t

CC

t

RAS

t

RC

t

S

H

t

SS

t

RCD

t

SH

t

SS

t

SH

t

SS

Row Active Read Write Read Row Active

Precharge

*Note2

t

RP

t

SS

Ra

t

SH

Rb

t

SH

t

SS

t

SH

t

SS

t

SS

t

OH

t

SLZ

t

SAC

*Note3

*Note4*Note2,3

*Note2,3

BS BS BS

Cb Cc

*Note3

DbQa

*Note3 *Note4

t

SH

BS

BS BS

*Note1

HIGH

t

CCD

Ra

*Note2

Ca

Qc

Rb

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 28/45

Note: 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.

2. Bank active @ read/write are controlled by BA0~BA1.

BA0 BA1 Active & Read/Write

0 0 Bank A

0 1 Bank B

1 0 Bank C

1 1 Bank D

3. Enable and disable auto precharge function are controlled by A10/AP in read/write command

A10/AP BA0 BA1 Operating

0 0 Disable auto precharge, leave A bank active at end of burst.

0 1 Disable auto precharge, leave B bank active at end of burst.

1 0 Disable auto precharge, leave C bank active at end of burst.

0

1 1 Disable auto precharge, leave D bank active at end of burst.

0 0 Enable auto precharge, precharge bank A at end of burst.

0 1 Enable auto precharge, precharge bank B at end of burst.

1 0 Enable auto precharge, precharge bank C at end of burst.

1

1 1 Enable auto precharge, precharge bank D at end of burst.

4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.

A10/AP BA0 BA1 Precharge

0 0 0 Bank A

0 0 1 Bank B

0 1 0 Bank C

0 1 1 Bank D

1 X X All Banks

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 29/45

Power Up Sequence

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 30/45

Read & Write Cycle at Same Bank @ Burst Length = 4

CLOCK

CKE

CS

RAS

CAS

ADDR

WE

DQ

DQM

A10/AP

BA0

BA1

CL =2

CL =3

Row Active

(A-Bank)

Read

(A-Bank)

Write

(A-Bank)

Row Active

(A-Bank) Precharge

(A - Bank)

:Don't Care

Qa1 Qa2 Qa3 Db1 Db2 Db3Db0Qa0

Ra

*Note2

Rb Cb

Ra

HIGH

t

RCD

t

RDL

0123456789

10 11 12 13 14 15 16 17 18 19

Rb

*Note3

Qa1 Qa2 Qa3 Db1 Db2 Db3Db0Qa0

t

RDL

*Note3

Precharge

(A-Bank)

t

RC

*Note1

Ca

*Note: 1. Minimum row cycle times is required to complete internal DRAM operation.

2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row

precharge. Last valid output will be Hi-Z (tSHZ) after the clock.

3. Output will be Hi-Z after the end of burst. (1, 2, 4, 8 & Full page bit burst)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 31/45

Page Read & Write Cycle at Same Bank @ Burst Length = 4

Note: 1. To Write data before burst read ends. DQM should be asserted three cycles prior to write command to avoid bus

contention.

2. Row precharge will interrupt writing. Last data input, tRDL before row precharge , will be written.

3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input

data after Row precharge cycle will be masked internally.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 32/45

Page Read Cycle at Different Bank @ Burst Length = 4

Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.

2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 33/45

Page Write Cycle at Different Bank @ Burst Length = 4

*Note: 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.

2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 34/45

Read & Write Cycle at Different Bank @ Burst Length = 4

*Note: 1. tCDL should be met to complete write.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 35/45

Read & Write cycle with Auto Precharge @ Burst Length = 4

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 36/45

Clock Suspension & DQM Operation Cycle @ CAS Latency = 2, Burst Length = 4

*Note: 1. DQM is needed to prevent bus contention

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 37/45

Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page

*Note: 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.

Both cases are illustrated above timing diagram. See the label 1, 2 on them.

But at burst write, Burst stop and RAS interrupt should be compared carefully.

Refer the timing diagram of “Full page write burst stop cycles”.

2. Burst stop is valid at every burst length.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 38/45

Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page

*Note: 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by

AC parameter of tRDL.

DQM at write interrupted by precharge command is needed to prevent invalid write.

DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input

data after Row precharge cycle will be masked internally.

2. Burst stop is valid at every burst length.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 39/45

Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4

CLOCK

CKE

CS

RAS

CAS

ADDR

WE

DQ

DQM

A10/AP

BA1

Active

Power-down

Exit

Precharge

: Don't care

*Note3

*Note2

*Note1

t

SS

t

SS

t

SS

Qa0 Qa1 Qa2

t

SHZ

Precharge

Power-Down

Entry Precharge

Power-Down

Exit

Row Active

Active

Power-down

Entry

Read

012345678910 11 12 13 14 15 16 17 18 19

BA0

Ra

Ra Ca

*Note: 1. All banks should be in idle state prior to entering precharge power down mode.

2. CKE should be set high at least 1CLK + tSS prior to Row active command.

3. Can not violate minimum refresh specification.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 40/45

Self Refresh Entry & Exit Cycle

01 2 345678910111213141516171819

CLOCK

CKE

CS

RAS

CAS

ADDR

WE

DQ

DQM

A10/AP

BA0,BA1

Self Refresh Entry Auto Refresh

: Don't care

*Note2

*Note1

t

SS

*Note3

*Note4

t

RFC

min

*Note6

Self Refresh Exit

Hi-Z Hi-Z

*Note5

*Note7

*Note:

TO ENTER SELF REFRESH MODE

1. CS , RAS & CAS with CKE should be low at the same clock cycle.

2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.

3. The device remains in self refresh mode as long as CKE stays “Low”.

cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.

TO EXIT SELF REFRESH MODE

4. System clock restart and be stable before returning CKE high.

5. CS starts from high.

6. Minimum tRFC is required after CKE going high to complete self refresh exit.

7. 8K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh exit.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 41/45

Mode Register Set Cycle Auto Refresh Cycle

CLOCK

CKE

CS

RAS

CAS

ADDR

WE

DQ

DQM

:Don't Care

HIGH

0 12 34 5 6 01 23 45 67 8 910

HIGH

Key Ra

HI-Z HI-Z

*Note2

*Note1

*Note3

t

RFC

MRS New

Command

Auto Refresh New Command

All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.

MODE REGISTER SET CYCLE

*Note: 1. CS , RAS , CAS , & WE activation at the same clock cycle with address key will set internal mode register.

2. Minimum 2 clock cycles should be met before new RAS activation.

3. Please refer to Mode Register Set table.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 42/45

54-LEAD TSOP(II) SDRAM (400mil) (1:3)

A

A2

D

DETAIL "A"

Seating plane

θ

Y

b1

SECTION B-B

b

WITH PLANTING

BASE METAL

c

c1

see detail A

E

E1

e

1

b

27

54 28

Pin 1 identifier

-C-

A1

L

L1

B

Symbol Dimension in mm Dimension in inch

Min Norm Max Min Norm Max

A

1.20

0.047

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.95 1.00 1.05 0.037 0.039 0.041

b 0.30 0.45 0.012 0.018

b1 0.30 0.35 0.40 0.012 0.014 0.016

c 0.12 0.21 0.005 0.008

c1 0.10 0.127 0.16 0.004 0.005 0.006

D 22.22 BSC 0.875 BSC

E 11.76 BSC 0.463 BSC

E1 10.16 BSC 0.400 BSC

L 0.40 0.50 0.60 0.016 0.020 0.024

L1 0.80 REF 0.031 REF

e 0.80 BSC 0.031 BSC

Y

0.1

0.004

Θ 0° 8° 0° 8°

Controlling dimension : Millimeter

(Revision date : May 25 2012)

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 43/45

PACKING DIMENSIONS

54-BALL SDRAM ( 8x8 mm )

Symbol Dimension in mm Dimension in inch

Min Norm Max Min Norm Max

A

1.00

0.039

A1 0.20 0.25 0.30 0.008 0.010 0.012

A2 0.61 0.66 0.71 0.024 0.026 0.028

Φb 0.30 0.35 0.40 0.012 0.014 0.016

D 7.90 8.00 8.10 0.311 0.315 0.319

E 7.90 8.00 8.10 0.311 0.315 0.319

D1

6.40

0.252

E1

6.40

0.252

e

0.80

0.031

Controlling dimension : Millimeter.

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 44/45

Revision History

Revision Date Description

1.0 2011.01.25 Original

1.1 2012.06.06

Modify Page 42

θ=10 to 8°

b,b1=0.25 to 0.3mm

ESMT

M12L2561616A (2A)

Operation Temperature Condition -40

°

C~85

°

C

Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012

Revision: 1.1 45/45

Important Notice

No part of this document may be reproduced or duplicated in any form or by any means without

the prior permission of ESMT.

The contents contained in this document are believed to be accurate at the time of publication.

ESMT assumes no responsibility for any error in this document, and reserves the right to change

the products or specification in this document without notice.

The information contained herein is presented only as a guide or examples for the application of

our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights,

or other intellectual property rights of third parties which may result from its use. No license, either

express , implied or otherwise, is granted under any patents, copyrights or other intellectual

property rights of ESMT or others.

Any semiconductor devices may have inherently a certain rate of failure. To minimize risks

associated with customer's application, adequate design and operating safeguards against injury,

damage, or loss from such failure, should be provided by the customer when making application

designs.

ESMT's products are not authorized for use in critical applications such as, but not limited to, life

support devices or system, where failure or abnormal operation may directly affect human lives or

cause physical injury or property damage. If products described here are to be used for such

kinds of application, purchaser must do its own quality assurance testing appropriate to such

applications.